Power semiconductor device
By diagonally positioning main electrode-emitter sensing terminals directly connected to electrodes, the power semiconductor device achieves miniaturization and maintains insulation, addressing wiring complexity and space limitations, enabling high-temperature and high-speed operation.
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2019-11-28
- Publication Date
- 2026-07-09
AI Technical Summary
Conventional power semiconductor devices face challenges in miniaturization due to complex wiring and limited space on the insulating substrate, and external mounting of main electrode-emitter locators compromises insulation performance.
The power semiconductor device features main electrode-emitter sensing terminals directly connected to the main electrodes, with diagonal positioning outside the module, reducing the distance between these terminals and electrodes, eliminating the need for external connections, and allowing for a compact design.
This configuration enables module miniaturization while maintaining insulation performance, facilitating high-temperature and high-speed operation with wide-bandgap semiconductor materials, and allows for a compact assembly with integrated gate drivers.
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