Power semiconductor device with adhesive bond between power module and carrier

Abstract

Power semiconductor device (100) comprising: - a power module unit (200); - an adhesive surface body (6) connected to the power module unit (200); - a carrier element (7) connected to the power module unit (200), wherein the adhesive surface body (6) is arranged between the power module unit (200) and the carrier element (7);and- a flow-prevention frame (8) which is sandwiched between the power module unit (200) and the support element (7) and is placed around the adhesive surface body (6), wherein the flow-prevention frame (8) is made of a porous body, wherein the adhesive surface body (6) has an outer circumferential surface (6c) which adjoins an inner circumferential surface (18) of the flow-prevention frame (8), and wherein a value obtained by dividing a maximum value of an internal pressure on the outer circumferential surface (6c) by a minimum value of the internal pressure is greater than or equal to 1 and less than or equal to 10.;

Description

TECHNICAL AREA

[0001] The present invention relates to a power semiconductor device and a power conversion device. STATE OF THE ART

[0002] Conventionally, a screw has often been used to connect and fix a power module and a support member together. In particular, in a case where heat dissipation is required, a screw fastening method using heat dissipation grease on a joint surface has been employed. However, this method involves a problem that the size increases since the screw fastening area is large. This method also involves the problem that heat resistance deteriorates and insulation decreases due to aging of grease.

[0003] In recent years, a method of bonding a supporting member and a power module using an adhesive sheet having high adhesion has been adopted. In particular, when the supporting member is formed of a heat-dissipating member, a heat-dissipating adhesive sheet having high thermal conductivity is selected as the adhesive sheet. If the power module and the carrier element are not at the same potential, the adhesive surface body must have insulation. Therefore, a multifunctional material that has heat dissipation, insulation and adhesiveness can be selected as the adhesive sheet. Thereby, it is possible to reduce the mounting area and cost of the power semiconductor device.

[0004] As the adhesive sheet having the above properties, for example, a thermally conductive resin composition obtained by combining an inorganic substance and a thermosetting resin is used. When the power module and the support member are bonded, a method of heating an uncured bonding sheet and applying pressure to the bonding sheet while curing is used. The inorganic substance does not take part in the adhesion, and the thermosetting resin takes care of the adhesion. In many cases, voids are present in the thermosetting resin.

[0005] In order to bond the power module and the support member smoothly, it is necessary to first heat and pressurize the bonding sheet at a time when the viscosity of the thermosetting resin decreases. The pressing force needs to be set appropriately considering such influences as the deformation of the power module, the deformation of the support member, and the irregularity of the bonded surface due to the application of pressure. If the pressing force is too small, a gap is formed between the power module or the support member and the adhesive sheet. In addition, voids originally present in the adhesive sheet may remain and cause internal cracks. As a result, the reliability of the bonding may be reduced.

[0006] When the adhesive sheet is made of a multifunctional material having insulation and heat dissipation properties, the influence of voids in the adhesive sheet is more remarkable. As for insulation, partial discharge due to voids in the adhesive sheet leads to a reduction in insulation reliability.

[0007] The relation between the size of the cavities and the partial discharge is based on Paschen's law. In particular, the larger the cavity, the lower the reliability of the insulation. Similarly, with respect to heat dissipation, the thermal conductivity of an area where a void is present may be reduced.

[0008] Usually, the power module is glued to the top of the adhesive sheet, and the carrier element is glued to the underside of the adhesive sheet. The side face of the bonding sheet is not bonded to the power module and the support member. When the adhesive sheet is bonded to the power module and the support member, the power module, the support member and the adhesive sheet are pressed in the vertical direction of the adhesive sheet. Since the side surface of the adhesive sheet is open, almost no internal pressure is generated inside the adhesive sheet. To address this problem, Japanese Patent Application Publication JP-A-2012-174965 (Patent Literature 1) discloses a volume increase / decrease absorbing portion of the film disposed in a peripheral portion of an adhesive sheet. LIST OF LITERATURE PATENT LITERATURE

[0009] PTL 1: Japanese Patent Application Publication JP 2012-174965 A SUMMARY OF THE INVENTION TECHNICAL PROBLEM

[0010] As described in Patent Literature 1, it is considered that adhesiveness, heat dissipation, and insulation can be improved by forming a frame that defines an increase or decrease in volume of the adhesive sheet. However, in the technique described in Patent Literature 1, there is a difference in the flow amount of a thermosetting resin in the adhesive sheet due to a difference in the distance between the center of pressure applied to the adhesive sheet and the inner peripheral surface of the volume increase / decrease portion of the film. Therefore, there occurs a difference in internal pressure of the outer peripheral surface of the adhesion sheet.

[0011] In particular, when the adhesive sheet is bonded to the power module and the support member, the adhesive sheet flows in the direction of the plane. The adhesive sheet includes, for example, ceramics, a thermosetting resin, and voids. The ceramic, thermosetting resin and voids are regarded as liquid, the thickness direction of the bonding sheet is regarded as the cross-sectional area of ​​the flow path, and the distance from the center of the bonding sheet is regarded as the length of the flow path.

[0012] Using the theory of hydrodynamics, for a rectangular bonded sheet, the corner portion of the bonded sheet is farthest from the center of the bonded sheet. In the corner portion of the adhesive sheet, the flow path is long, so that the liquid resistance increases. As a result, the amount of liquid of the adhesive sheet is the smallest at the corner portion of the adhesive sheet, so that the internal pressure is the lowest. When the internal pressure of the adhesive sheet is low, the voids left in the adhesive sheet increase in number and size, so that adhesiveness, heat dissipation and insulation deteriorate. Therefore, the reliability of the power semiconductor device decreases.

[0013] The present invention was made in view of the above problems, and an object thereof is to manufacture a power semiconductor device capable of improving reliability. THE SOLUTION OF THE PROBLEM

[0014] A power semiconductor device according to the present invention includes a power module unit, an adhesive sheet, a support member, and a flow-prevention frame. The adhesive sheet is bonded to the power module unit. The carrier element is connected to the power module unit, with the adhesive sheet being arranged between the power module unit and the carrier element. The flow-preventing frame is sandwiched between the power module unit and the support member, and is wrapped around the adhesive sheet. The adhesive sheet has an outer peripheral surface which abuts on an inner peripheral surface of the flow preventing frame. A value resulting from dividing a maximum value of an internal pressure on the outer peripheral surface by a minimum value of the internal pressure is less than or equal to 10. ADVANTAGEOUS EFFECTS OF THE INVENTION

[0015] With the power semiconductor device according to the present invention, it is possible to improve adhesiveness, heat dissipation, and insulation of the bonding sheet by reducing the number and size of voids left in the bonding sheet. As a result, the reliability of the power semiconductor device can be improved. character list figure 1 is a schematic perspective view showing a configuration of a power semiconductor device according to a first embodiment. figure 2 is a cross-sectional view taken along the line II-II in FIG figure 1. figure 3 is a cross-sectional view taken along line III-III in FIG figure 2. figure 4 is a schematic cross-sectional view showing a manufacturing method of the power semiconductor device according to the first embodiment. figure 5 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to a second embodiment. figure 6 is a schematic perspective view showing a configuration of a power semiconductor device according to a third embodiment. figure 7 is a schematic perspective view showing a configuration of a power module of the power semiconductor device according to the third embodiment. figure 8 is a cross-sectional view taken along the line VIII-VIII in FIG figure 6. figure 9 is a cross-sectional view taken along line IX-IX in FIG figure 8th. figure 10 is a schematic perspective view showing a configuration of a power semiconductor device according to a fourth embodiment. figure 11 is a schematic perspective view showing a configuration of a substrate of the power semiconductor device according to the fourth embodiment. figure 12 is a cross-sectional view taken along line XII-XII in FIG figure 10 figure 13 is a cross-sectional view taken along line XIII-XIII in FIG figure 12. figure 14 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to a fifth embodiment. figure 15 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to a sixth embodiment. figure 16 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to a seventh embodiment. figure 17 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to an eighth embodiment. figure 18 is a cross-sectional view taken along line XVIII-XVIII in FIG figure 17 figure 19 is a schematic cross-sectional view showing a configuration of a power semiconductor device according to a ninth embodiment. figure 20 is a cross-sectional view taken along line XX-XX in FIG figure 19 figure 21 is a block diagram showing a configuration of a power conversion system employing a power conversion device according to a tenth embodiment. DESCRIPTION OF THE EMBODIMENTS

[0016] Embodiments of the present invention are described in detail below. In the following description, the same or corresponding elements are denoted by the same reference numerals, and redundant description is not repeated. First embodiment

[0017] figure 1 is a schematic perspective view showing a configuration of a power semiconductor device according to a first embodiment. figure 2 is a cross-sectional view taken along the line II-II in FIG figure 1.

[0018] As in the figure 1 and figure2, a power semiconductor device 100 according to the first embodiment mainly includes a power module unit 200, an adhesive sheet 6, a support member 7 and a flow prevention frame 8. The power module unit 200 mainly includes a power semiconductor element 1, a first metal wiring member 2a, a second metal wiring member 2b, a third metal wiring member 2c , a heat spreader 3 , a first metal joint 4a , a second metal joint 4b and a molding resin portion 5 .

[0019] The power semiconductor element 1 is sealed by the mold resin portion 5 . The power semiconductor element 1 is connected to the heat spreader 3 by means of the first metal connection element 4a. The power semiconductor element 1 is connected to the first metal wiring member 2a using the second metal connecting member 4b.

[0020] The first metal wiring member 2a and the second metal wiring member 2b are made of, for example, solder or metal such as silver or aluminum. The power semiconductor element 1 is connected to the second metal wiring element 2b via the third metal wiring element 2c. The third metal wiring member 2c is z. B. a wire made of aluminum, copper or the like.

[0021] The power semiconductor element 1 is, for example, a voltage-controlled metal-oxide-semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a diode, or the like. The power semiconductor element 1 is made of, for example, a semiconductor such as silicon, silicon nitride, gallium nitride, or silicon carbide. The power semiconductor element 1 is a main heat source in the power module unit 200.

[0022] The first metal wiring member 2a and the second metal wiring member 2b are each formed so that a portion thereof is exposed to the outside of the mold resin portion 5 . Both the first metal wiring member 2a and the second metal wiring member 2b serve as a connection portion with the outside. The carrier element 7 is a heat sink, for example, which dissipates the heat generated by the power semiconductor element 1 during operation to the outside.

[0023] The carrier element 7 consists of metal, such as. B. aluminum or copper. The support member 7 is connected to the power module unit 200 through an adhesive sheet 6 therebetween. The support member 7 has, for example, a body portion 7a and a plurality of ribs 7b. Since the support member 7 has a plurality of ribs 7b, heat dissipation is improved. A cooling solution can be filled into the carrier element 7 in order to cool the carrier element 7 . The support member 7 may be connected to a peripheral component such as a radiator (not shown). The cooling liquid is e.g. water.

[0024] At least one surface of the power module unit 200 is connected to the carrier element 7 with the aid of the adhesive sheet 6 . For example, the power module unit 200 may have a structure in which a portion of the heat spreader 3 that does not have an insulating function is exposed from the mold resin portion 5, and the exposed surface and the supporting member 7 are bonded by an adhesive sheet 6 that is insulating, adhesive, and is heat dissipating.

[0025] The power module unit 200 may have a structure in which an insulating substrate containing ceramics is used as the heat spreader 3 partially protruding from the molding resin portion 5, and the exposed surface and the support member 7 are bonded by an adhesive sheet 6 having adhesiveness and Has heat dissipation ability. The power module unit 200 may have a structure in which all of the surfaces are sealed with a molding resin and one of the surfaces is bonded to the support member 7 by an adhesive sheet 6 having adhesive property and heat dissipation property.

[0026] The bonding sheet 6 is bonded to the power module unit 200 . The adhesive sheet 6 is in contact with the heat spreader 3 and the molding resin portion 5, for example. The bonding sheet 6 is made of, for example, a mixture of ceramics and a thermosetting resin. The ceramic is z. B. boron nitride. The thermosetting resin is e.g. B. an epoxy resin or a polyimide resin. The adhesive sheet 6 can be manufactured by simply mixing ceramic grains in a thermosetting resin or by impregnating a ceramic skeleton with a thermosetting resin. The ceramic acts as a heat dissipation path. The thermosetting resin provides the adhesion. The ceramic and the thermosetting resin have insulating properties.

[0027] It suffices that the adhesive sheet 6 is made of a material that is heat dissipating, insulating, and adhesive, and the material of the adhesive sheet 6 is not limited to the above materials. The adhesive sheet 6 described above generally contains voids in a range of, for example, 1% by volume or more and 14% by volume or less. There is a possibility that the adhesiveness, insulation, and heat dissipation of the adhesive sheet 6 are deteriorated due to the voids.

[0028] As in figure 2, the flow preventing frame 8 is interposed between the power module unit 200 and the support member 7. As shown in FIG. The flow preventing frame 8 is arranged around the adhesive sheet 6 . figure 3 is a cross-sectional view taken along line III-III in FIG figure 2. As in figure 3, the flow prevention frame 8 has an inner peripheral surface 18 and an outer wall surface 28. The outer wall surface 28 is outside the inner peripheral surface 18. The outer wall surface 28 surrounds the inner peripheral surface 18. The adhesive sheet 6 has a central region 6a, an outer Peripheral portion 6b and an outer peripheral surface 6c. The outer peripheral portion 6b is located outside of the central portion 6a. The outer peripheral area 6b connects to the central area 6a. The outer peripheral portion 6b forms the outer peripheral surface 6c. The flow prevention frame 8 consists z. B. from a single layer. The flow preventing frame 8 is made of a single material, for example.

[0029] As in figure 3, the outer peripheral portion 6b surrounds the central portion 6a in the thickness direction of the adhesive sheet 6. As shown in FIG. The outer peripheral portion 6b forms the outer peripheral surface 6c. The outer peripheral surface 6c abuts the inner peripheral surface 18 of the flow preventing frame 8. As shown in FIG. As in figure 3, the inner peripheral surface 18 as viewed in the direction of thickness of the adhesive sheet 6 has, for example, a rectangular shape with rounded corners. The inner peripheral surface 18 has a rounded corner portion 18a and a side portion 18b.

[0030] The side portion 18b has a linear shape. The rounded corner portion 18a is continuous with the side portion 18b. The radius of curvature of the rounded corner portion 18a is greater than or equal to 1 / 30 of the length of the long side of the rectangle. The radius of curvature of the rounded corner portion 18a may be greater than or equal to 1 / 20 or 1 / 10 of the length of the long side of the rectangle. As in figure 3, the outer peripheral surface 6c may have, for example, a rounded-corner rectangular shape as viewed in the thickness direction of the adhesive sheet 6. As in FIG figure 9, the outer peripheral surface 6c may have a rectangular shape as viewed in the thickness direction of the adhesive sheet 6. As shown in FIG. The corner portion 18a of the outer peripheral surface 6c may have a right angle as viewed in the thickness direction of the adhesive sheet 6 instead of a rounded shape.

[0031] figure 4 is a schematic cross-sectional view showing a manufacturing method of the power semiconductor device according to the first embodiment. As in figure4, before the thermal pressure bonding, the adhesive sheet 6 is inserted into the inner peripheral surface 18 of the flow preventing frame 8 with a gap 61 formed between the adhesive sheet 6 and the inner peripheral surface 18. As shown in FIG. The power module unit 200 and the carrier element 7 are then firmly connected with the adhesive surface body 6 lying between them. In particular, the power module unit 200 is bonded by pressurizing and heating to a pressure and temperature at which the power module unit does not break.

[0032] During the thermal pressure bonding, the viscosity of the thermosetting resin contained in the bonding sheet 6 temporarily decreases. The adhesive sheet 6 flows when pressure is applied. The adhesive sheet 6 is bonded both in the thickness direction (vertical direction in figure 2) as well as in the direction of the plane (horizontal direction in figure 2) deformed. During the deformation, part of the ceramics, the thermosetting resin and the voids contained in the adhesive sheet 6 flow.

[0033] That is, the gap 61 that existed in the planar direction before the thermal compression bonding between the bonding sheet 6 and the flow preventing frame 8 is filled by the flow of the bonding sheet 6 through the thermal compression bonding with the outer peripheral portion 6b (flow portion). After the thermal pressure bonding, the contact area between the outer peripheral surface 6c of the adhesive sheet 6 and the inner peripheral surface 18 of the flow preventing frame 8 may be a part or all of the circumference of the outer peripheral surface 6c of the adhesive sheet 6 .

[0034] When the adhesive sheet 6 is open in the direction of the plane (i.e. when the in figure 2 does not exist in the power semiconductor device 100), the pressure is highest at the central portion of the adhesive sheet 6 and the pressure is lowest at the outer peripheral surface 6c. The adhesive sheet 6 flows from the central portion of the adhesive sheet 6 to the outer peripheral side due to the pressure difference between the central portion and the outer peripheral surface 6c. The adhesive sheet 6 deforms and flows under a pressure of about 10 MPa, for example.

[0035] A part of the ceramic, thermosetting resin and cavity flows from the central portion of the adhesion sheet 6 to the outer peripheral side under the pressing force at the time of connection as a driving force and the fluid resistance in the adhesion sheet 6 as a reaction force. The corner portion of the outer peripheral surface 6 c of the adhesive sheet 6 is farthest from the central portion of the adhesive sheet 6 . Therefore, the corner portion of the outer peripheral surface 6c of the adhesive sheet 6 has a higher fluid resistance than the portions other than the corner portion of the outer peripheral surface 6c.

[0036] As a result, the amount of flow in the corner portion of the outer peripheral surface 6c of the adhesive sheet 6 is smaller than that in portions other than the corner portion of the outer peripheral surface 6c. Therefore, in the corner portion of the outer peripheral surface 6c of the adhesion sheet 6, the internal pressure generated in the adhesion sheet 6 decreases, and the void existing in the adhesion sheet 6 cannot be crushed sufficiently. As a result, a large number of voids remain in the adhesive sheet 6, and adhesion reliability, heat dissipation, and insulation reliability may deteriorate.

[0037] In the power semiconductor device 100 according to the first embodiment, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 is uniform. Specifically, a value obtained by dividing the maximum value of the internal pressure on the outer peripheral surface 6c of the adhesive sheet 6 by the minimum value of the internal pressure on the outer peripheral surface 6c of the adhesive sheet 6 is less than or equal to 10.

[0038] The value obtained by dividing the maximum value of the internal pressure on the outer peripheral surface 6c of the adhesive sheet 6 by the minimum value of the internal pressure on the outer peripheral surface 6c of the adhesive sheet 6 may be less than or equal to 5 or less than or equal to 2. When the outer shape of the adhesive sheet 6 is rectangular, the internal pressure is likely to be minimized at the corner portion of the rectangle and the internal pressure is maximized at the center of the long side of the rectangle. The internal pressure in the middle of the long side of the rectangle can be less than or equal to 10 times the internal pressure in the corner area of ​​the rectangle.

[0039] Next, a method of calculating the internal pressure at the outer peripheral surface of the adhesive sheet will be described. The internal pressure at the outer peripheral surface of the adhesion sheet is obtained by calculation using structural parameters of the flow prevention frame, the adhesion sheet, and the like. The method of calculating the internal pressure at the outer peripheral surface of the adhesive sheet includes, for example, a method of using Ergun's equation.

[0040] The material of the flow preventing frame 8 has sufficient strength to restrain the adhesive sheet 6 which spreads under high pressure of e.g. B. 10 MPa deformed and flows. Before the thermal compression bonding, the height of the flow preventing frame 8 is desirably greater than the height of the adhesive sheet 6. The flow preventing frame 8 is deformed by the thermal compression bonding. After thermal compression bonding, the thickness of the flow preventing frame 8 is desirably equal to or greater than the thickness of the adhesive sheet 6.

[0041] According to the power semiconductor device 100 according to the first embodiment, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 is uniform. Therefore, the number and size of the voids left in the adhesive sheet 6 are reduced. The size (diameter) of the voids present in the adhesive sheet 6 may be less than or equal to 20 μm, for example. With this configuration, the adhesive property, heat dissipation, and insulation of the adhesive sheet 6 can be improved. As a result, the reliability of the power semiconductor device 100 can be improved. Therefore, it is possible to suppress an increase in the mounting area and an increase in cost due to the formation of an additional design margin. Second embodiment

[0042] Next, a configuration of the power semiconductor device 100 according to the second embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0043] figure 5 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the second embodiment. The cross section in figure 5 corresponds to the cross section along the line III-III in figure 2. As in figure 5, the inner peripheral surface 18 of the flow preventing frame 8 is circular as viewed in the thickness direction of the adhesive sheet 6. As shown in FIG. Similarly, the outer peripheral surface 6c of the adhesive sheets 6 is circular. The flow preventing frame 8 is in the shape of a ring.

[0044] Viewed in the thickness direction of the adhesion sheet 6, the distance between the center of the adhesion sheet 6 and the inner peripheral surface 18 of the flow preventing frame 8 (or the outer peripheral surface 6c of the adhesion sheet 6) is the same at any point of the inner peripheral surface 18. As a result, the fluid resistance can be kept constant during the thermal pressure connection. As a result, the flow amount of the adhesive sheet 6 can be made uniform in all directions in the plane viewed from the center of the adhesive sheet 6 . Thus, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform. Third embodiment

[0045] Next, a configuration of the power semiconductor device 100 according to the third embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0046] figure 6 is a schematic perspective view showing a configuration of the power semiconductor device 100 according to the third embodiment. figure 7 is a schematic perspective view showing a configuration of the power module unit 200 of the power semiconductor device 100 according to the third embodiment.

[0047] As in figure 7, the power module unit 200 has a bonding surface 9. The bonding surface 9 is a surface that is in contact with the adhesive sheet 6. As shown in FIG. The joining surface 9 has the heat spreader 3 and the molding resin portion 5 . The connecting surface 9 has a curved shape. The power module unit 200 is thinnest at the corner portion (first corner portion 9 b ) of the connection surface 9 and thickest at the center (first center 9 a ) of the connection surface 9 . The connecting surface 9 may be a convex curved surface radially and continuously extending from the center (first center 9a).

[0048] figure 8 is a cross-sectional view taken along the line VIII-VIII in FIG figure 6.In figure 8 shows the cross section parallel to the thickness direction of the adhesive sheet 6. FIG. As in figure 8, the thickness of the adhesive sheet 6 in cross section may increase from the central portion 6a toward the outer peripheral surface 6c. In cross section, the thickness of the outer wall surface 28 of the flow prevention frame 8 can be larger than the thickness of the inner peripheral surface 18 of the flow prevention frame 8. The thickness of the outer peripheral surface 6c of the adhesive sheet 6 can be larger than the maximum value of the thickness of the central portion 6a of the adhesive sheet 6.

[0049] The flow prevention frame 8 has a first surface 38 and a second surface 48. The second surface 48 is on the opposite side to the first surface 38. As shown in FIG. The first surface 38 is in contact with the molding resin portion 5. The second surface 48 is in contact with the support member 7. The distance between the first surface 38 and the second surface 48 may increase from the inner peripheral surface 18 toward the outer wall surface 28. The first surface 38 can be curved. The second surface 48 can be planar.

[0050] figure 9 is a cross-sectional view taken along line IX-IX in FIG figure 8. As in figure 9, the inner peripheral surface 18 of the flow preventing frame 8 as viewed in the thickness direction of the adhesive sheet 6 may be square or rectangular. Similarly, the outer shape of the adhesive sheet 6 may be square or rectangular. The outer wall surface 28 of the anti-flow frame 8 may be square or rectangular. The thickness of the adhesive sheet 6 at the corner portion of the outer peripheral surface 6c of the adhesive sheet 6 may be larger than the thickness of the adhesive sheet 6 at the center of one side of the outer peripheral surface 6c of the adhesive sheet 6.

[0051] In the power semiconductor device 100 according to the third embodiment, the gap between the adhesive sheet 6 and the power module unit 200 in the thickness direction is largest at the corner portion of the outer peripheral surface 6c farthest from the center of the adhesive sheet 6 before the thermal pressure bonding. In general, the larger the cross-sectional area of ​​a flow path, the easier the fluid will flow. Therefore, by increasing the gap between the adhesion sheet 6 and the power module unit 200 in the thickness direction, an effect of increasing the flow amount of the adhesion sheet 6 can be expected.

[0052] In the power semiconductor device 100 according to the third embodiment, the power module unit 200 is thinnest at the corner portion (first corner portion 9 b ) of the bonding surface 9 and thickest at the center (first center 9 a ) of the bonding surface 9 . Therefore, the difference in flow amount of the adhesion sheet 6 at the outer periphery of the adhesion sheet 6 can be reduced.

[0053] Therefore, it is expected that the internal pressure of the adhesive sheet 6 becomes uniform. As a result, the connection reliability, heat dissipation, and insulation reliability of the power semiconductor device 100 can be improved. Therefore, it is possible to suppress an increase in the mounting area and an increase in cost due to the formation of an additional design margin. Fourth embodiment

[0054] Next, a configuration of the power semiconductor device 100 according to the fourth embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0055] figure 10 is a schematic perspective view showing a configuration of the power semiconductor device 100 according to the fourth embodiment. figure 11 is a schematic perspective view showing a configuration of a substrate of the power semiconductor device 100 according to the fourth embodiment.

[0056] As in figure 11, the carrier element 7 has an upper side 15. The upper side 15 is a surface facing the adhesive sheet 6. FIG. The top 15 is formed by the body portion 7a. The top 15 has a top surface 16, a side surface 11a and a bottom surface 11b. The top surface 16 is continuously connected to the side surface 11a. The side surface 11a is continuously connected to the bottom surface 11b. The top surface 16 is separated from the bottom surface 11b. The top 15 is formed with a groove 11 .

[0057] The groove 11 is delimited by the side surface 11a and the bottom surface 11b. The groove 11 is deepest at the corner portion (second corner portion 15b) of the bottom surface 11b and shallowest at the center (second center 15a) of the bottom surface. The bottom surface 11b may be a convex curved surface radially and continuously extending from the center (second center 15a).

[0058] figure 12 is a cross-sectional view taken along line XII-XII in FIG figure 10. In figure 12, the cross section parallel to the thickness direction of the adhesive sheet 6 is shown. As in figure 12, the adhesive sheet 6 and the flow preventing frame 8 may be disposed inside the groove 11. As shown in FIG. The adhesive sheets 6 and the flow preventing frame 8 can be in contact with the bottom surface 11b of the groove 11 . The flow preventing frame 8 may be in contact with the side face 11a of the groove 11 .

[0059] As in figure12, the cross-sectional thickness of the adhesive sheet 6 may increase from the central portion 6a toward the outer peripheral surface 6c. In cross section, the thickness of the outer wall surface 28 of the flow preventing frame 8 can be larger than the thickness of the inner peripheral surface 18 of the flow preventing frame 8. The thickness of the outer peripheral surface 6c of the adhesive sheet 6 can be larger than the maximum value of the thickness of the central portion 6a.

[0060] The flow prevention frame 8 has a first surface 38 and a second surface 48. The second surface 48 is on the opposite side to the first surface 38. As shown in FIG. The first surface 38 is in contact with the molding resin portion 5. The second surface 48 is in contact with the support member 7. The distance between the first surface 38 and the second surface 48 may increase from the inner peripheral surface 18 toward the outer wall surface 28. The first surface 38 can be planar. The second surface 48 can be curved.

[0061] figure 13 is a cross-sectional view taken along line XIII-XIII in FIG figure 12. As in figure 13, the inner peripheral surface 18 of the flow preventing frame 8 as viewed in the thickness direction of the adhesive sheet 6 may be square or rectangular. Similarly, the outer peripheral surface 6c of the adhesive sheet 6 may be square or rectangular. The outer wall surface 28 of the anti-flow frame 8 may be square or rectangular. The thickness of the adhesive sheet 6 at the corner portion of the outer peripheral surface 6c of the adhesive sheet 6 may be larger than the thickness of the adhesive sheet 6 in the center of one side of the outer peripheral surface 6c of the adhesive sheet 6.

[0062] In the power semiconductor device 100 according to the fourth embodiment, the gap between the adhesive sheet 6 and the power module unit 200 in the thickness direction is largest at the corner portion of the outer peripheral surface 6c farthest from the center of the adhesive sheet 6 before the thermal pressure bonding. In general, the larger the cross-sectional area of ​​a flow path, the easier the fluid will flow. Therefore, by increasing the gap between the adhesion sheet 6 and the power module unit 200 in the thickness direction, an effect of increasing the flow amount of the adhesion sheet 6 can be expected.

[0063] In the power semiconductor device 100 according to the fourth embodiment, the depth of the groove 11 is greatest at the corner portion (second corner portion 15b) of the bottom surface 11b and is smallest at the center (second center 15a) of the bottom surface 11b. Therefore, the difference in flow amount of the adhesion sheet 6 at the outer periphery of the adhesion sheet 6 can be reduced. Therefore, it is expected that the internal pressure of the adhesive sheet 6 becomes uniform.

[0064] As a result, the connection reliability, heat dissipation, and insulation reliability of the power semiconductor device 100 can be improved. Therefore, it is possible to suppress an increase in the mounting area and an increase in cost due to formation of an additional structural frame. Fifth embodiment

[0065] Next, a configuration of the power semiconductor device 100 according to the fifth embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0066] figure 14 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the fifth embodiment. The cross section in figure 14 corresponds to the cross section along the line III-III in figure 2. As in figure14, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a. The side portion 18b is curved to protrude inward. As in figure 14, the width of the flow preventing frame 8 decreases from the center of the side portion 18b toward the corner portion 18a as viewed in the thickness direction of the adhesive sheet 6. The outer wall surface 28 of the flow preventing frame 8 may be rectangular or square.

[0067] The flow prevention frame 8 is made of solid material, for example. Before the thermal pressure bonding, the thickness of the flow preventing frame 8 is greater than or equal to the thickness of the adhesive sheet 6. The flow preventing frame 8 is deformed during the thermal pressure bonding. After thermal compression bonding, the thickness of the flow preventing frame 8 is greater than or equal to the thickness of the adhesive sheet 6. The material having the above properties is, for example, a soft metal such as tin or a silicon-based rubber material.

[0068] In the power semiconductor device 100 according to the fifth embodiment, the distance in the in-plane direction between the inner peripheral surface 18 of the flow preventing frame 8 and the outer peripheral surface 6c of the adhesion sheet 6 continuously changes to be largest at the corner portion. Upon contact with the flow preventing frame 8, the outer peripheral surface 6c of the adhesive sheet 6, which flows at the time of thermal pressure bonding, becomes unable to flow. Therefore, the adhesive sheet 6 easily flows to the side where the gap is wide, i.e., the corner side of the adhesive sheet 6. In this way, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform. Sixth embodiment

[0069] Next, a configuration of the power semiconductor device 100 according to the sixth embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0070] figure 15 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the sixth embodiment. The cross section in figure 15 corresponds to the cross section along the line III-III in figure 2. In the power semiconductor device 100 according to the sixth embodiment, the flow preventing frame 8 is formed of a porous body. In contrast to the first to fifth embodiments, the adhesive sheet 6 which flows during the thermal pressure bonding enters the inside of the flow preventing frame 8 .

[0071] When the adhesion sheet 6 passes the inside of the flow preventing frame 8, fluid resistance against the adhesion sheet 6 is generated. Therefore, the flow of the adhesive sheet 6 can be restricted. In this way, the internal pressure of the adhesive sheet 6 can be made uniform. As the material of the flow preventing frame 8, a material in which the adhesion sheet 6 deforms similarly to the fifth embodiment is selected. The material of the flow preventing frame 8 is, for example, a porous body such as cellulose fibers, glass fibers, foamed resin, or porous ceramics.

[0072] As in figure15, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a. The side portion 18b has a linear shape. The pore diameter of the porous body increases from the center of the side portion 18b toward the corner portion 18a. Specifically, the pore diameter of the flow preventing frame 8 is largest at the corner portion 18a, and the pore diameter of the flow preventing frame 8 is smallest at the center of the side portion 18b.

[0073] As in figure 15, the flow preventing frame 8 may have a first portion 8a, a second portion 8b, a third portion 8c, a fourth portion 8d, a fifth portion 8e, a sixth portion 8f, and a seventh portion 8g. The first area 8a forms the center of the side area. The fifth area 8e forms the corner area. The second area 8b is on either side of the first area 8a. The third area 8c is located between the second area 8b and the fourth area 8d. The fourth area 8d is located between the third area 8c and the fifth area 8e. The fifth area 8e is located between the fourth area 8d and the sixth area 8f. The sixth area 8f lies between the fifth area 8e and the seventh area 8g. The seventh portion 8g is a corner portion of the flow preventing frame 8.

[0074] The pore diameter in the second area 8b is larger than the pore diameter in the first area 8a. The pore diameter in the third area 8c is larger than the pore diameter in the second area 8b. The pore diameter in the fourth area 8d is larger than the pore diameter in the third area 8c. The pore diameter in the fifth area 8e is larger than the pore diameter in the fourth area 8d. The pore diameter in the sixth area 8f is larger than the pore diameter in the fifth area 8e. The pore diameter in the seventh area 8g is larger than the pore diameter in the sixth area 8f.

[0075] In another mode, in a case where the pore diameters are the same, the density of pores of the flow preventing frame 8 may be highest at the corner portion and the density of pores of the flow preventing frame 8 may be lowest at the center of the side portion. In particular, the density of the pores in the second area 8b can be higher than the density of the pores in the first area 8a. The density of the pores in the third area 8c can be higher than the density of the pores in the second area 8b. The density of the pores in the fourth area 8d can be higher than the density of the pores in the third area 8c. The density of the pores in the fifth area 8e can be higher than the density of the pores in the fourth area 8d. The density of the pores in the sixth area 8f can be higher than the density of the pores in the fifth area 8e. The density of the pores in the seventh area 8g can be higher than the density of the pores in the sixth area 8f.

[0076] In the power semiconductor device 100 according to the sixth embodiment, when the adhesive sheet 6 passes the inside of the anti-flow frame 8, the fluid resistance is largest at the center of the side portion, and the fluid resistance is smallest at the corner portion. Therefore, the adhesion sheet 6 easily flows to the corner side of the adhesion sheet 6. Thus, the internal pressure of the outer peripheral surface 6c of the adhesion sheet 6 can be made uniform. Seventh embodiment

[0077] Next, a configuration of the power semiconductor device 100 according to the seventh embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0078] figure 16 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the seventh embodiment. The cross section in figure16 corresponds to the cross section along the line III-III in figure 2. In the power semiconductor device 100 according to the seventh embodiment, the flow preventing frame 8 is formed of a porous body. As in figure 16, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a.

[0079] The side portion 18b has a linear shape. As in figure 16, the width of the flow preventing frame 8 decreases from the center of the side portion 18b toward the corner portion 18a. Viewed from another angle, the width of the flow preventing frame 8 is largest at the center of the side portion 18b, and the width of the flow preventing frame 8 is smallest at the corner portion 18a.

[0080] In the power semiconductor device 100 according to the seventh embodiment, when the adhesive sheet 6 passes the inside of the flow preventing frame 8, the fluid resistance is largest at the center of the side portion and smallest at the corner portion. Therefore, the adhesive sheet 6 easily flows to the corner side of the adhesive sheet 6. Thus, the internal pressure of the outer peripheral surface 6c of the adhesive sheet 6 can be made uniform. Eighth embodiment

[0081] Next, a configuration of the power semiconductor device 100 according to the eighth embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0082] figure 17 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the eighth embodiment. The cross section in figure 17 corresponds to the cross section along the line III-III in figure 2. figure 18 is a cross-sectional view taken along line XVIII-XVIII in FIG figure 17. As in figure 18, in the power semiconductor device 100 according to the eighth embodiment, the anti-flow frame 8 may have two or more layers made of different materials. As in figure 18, the flow preventing frame 8 has a plurality of layers laminated in the thickness direction.

[0083] Specifically, the flow preventing frame 8 has, for example, a first layer 13a, a second layer 13b, and a third layer 13c. The second layer 13b lies on the third layer 13c. The first layer 13a lies on the second layer 13b. The second layer 13b is located between the first layer 13a and the third layer 13c. The material of the first layer 13a differs from the material of the second layer 13b. The material of the third layer 13c is different from that of the second layer 13b. For example, the material of the first layer 13a may be a porous body, and the material of the second layer 13b may be a solid material. The solid material is, for example, a soft metal such as tin or a silicon-based rubber material.

[0084] According to the power semiconductor device 100 according to the eighth embodiment, the flow preventing frame 8 having a desired thickness can be formed by laminating a variety of materials, each of which is difficult to increase in thickness. This makes it possible to expand the selection range of the material of the flow prevention frame 8, which is advantageous in view of ease of selection and material cost.

[0085] Next, a configuration of the power semiconductor device 100 according to a first modification of the eighth embodiment will be described. The power semiconductor device 100 according to the first modification of the eighth embodiment uses a flow prevention frame 8 having the in figure 14 shown shape. As in particular in figure14, the inner peripheral surface 18 of the flow preventing frame 8 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a. The side portion 18b is curved to protrude inward. The width of the flow preventing frame 8 decreases from the center of the side portion 18b toward the corner portion 18a.

[0086] Next, a configuration of the power semiconductor device 100 according to a second modification of the eighth embodiment will be described. The power semiconductor device 100 according to the second modification of the eighth embodiment uses a flow prevention frame 8 having the in figure 15 shown shape. Specifically, the flow preventing frame 8 is made of a porous body.

[0087] As in figure 15, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a. The side portion 18b has a linear shape. The pore diameter of the porous body increases from the center of the side portion 18b toward the corner portion 18a. The density of the pores of the porous body may increase from the center of the side portion 18b toward the corner portion 18a.

[0088] Next, a configuration of the power semiconductor device 100 according to a third modification of the eighth embodiment will be described. The power semiconductor device 100 according to the third modification of the eighth embodiment uses a flow prevention frame 8 having the in figure 16 shown shape. Specifically, the flow preventing frame 8 is made of a porous body.

[0089] As in figure 16, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a. The side portion 18b has a linear shape. The width of the flow preventing frame 8 decreases from the center of the side portion 18b toward the corner portion 18a. Ninth embodiment

[0090] Next, a configuration of the power semiconductor device 100 according to the ninth embodiment will be described. The same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 according to the first embodiment, and the description thereof will not be repeated. A configuration different from the power semiconductor device 100 according to the first embodiment will be mainly described below.

[0091] figure 19 is a schematic cross-sectional view showing a configuration of the power semiconductor device 100 according to the ninth embodiment. The cross section in figure 19 corresponds to the cross section along the line III-III in figure 2. figure 20 is a cross-sectional view taken along line XX-XX in FIG figure 19. As in figure 19, the inner peripheral surface 18 has a corner portion 18a and a side portion 18b as viewed in the thickness direction of the adhesive sheet 6. The side portion 18b is continuous with the corner portion 18a.

[0092] As in the figure 19 and figure 20, the power semiconductor device 100 according to the ninth embodiment has a plurality of recesses 12 provided in the inner peripheral surface 18. As shown in FIG. The density of the plurality of recesses 12 decreases from the center of the side portion toward the corner portion. The material of the flow preventing frame 8 is, for example, a solid material. The plurality of recesses 12 may be distributed in the thickness direction of the flow preventing frame 8 as shown in FIG figure 20, or distributed in the width direction of the flow preventing frame 8. FIG. The adhesive sheet 6 enters at least a portion of the plurality of recesses 12 . The plurality of recesses 12 may be exposed on the outer wall surface 28 of the anti-flow frame 8 .

[0093] In the power semiconductor device 100 according to the ninth embodiment, when the adhesive sheet 6 passes the inside of the flow preventing frame 8, the fluid resistance is largest at the center of the side portion and smallest at the corner portion. Therefore, the adhesion sheet 6 easily flows to the corner side of the adhesion sheet 6. Thus, the internal pressure of the outer peripheral surface 6c of the adhesion sheet 6 can be made uniform. Tenth embodiment

[0094] In the present embodiment, the power semiconductor device 100 according to any one of the first to ninth embodiments is applied to a power conversion device. In the tenth embodiment, a case where the present invention is applied to a three-phase inverter is described, although the present invention is not limited to a particular power converter device.

[0095] figure 21 is a block diagram illustrating a configuration of a power conversion system to which the power conversion device according to the tenth embodiment is applied.

[0096] This in figure The power converter system shown in FIG. 21 includes a power supply 150, a power converter device 250, and a load 300. FIG. The power supply 150 is a DC power supply and supplies DC power to the power conversion device 250. The power supply 150 can be of any type. For example, the power supply 150 can consist of a DC system, a solar cell and a battery, or a rectifier circuit or an AC / DC converter connected to an AC system. Alternatively, the power supply 150 may consist of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0097] The power converter device 250 is a three-phase inverter that is connected between the power supply 150 and the load 300 , converts the DC power supplied from the power supply 150 into AC power, and supplies the AC power to the load 300 . As in figure 21, the power converter device 250 includes a main converter circuit 251 that converts direct current into alternating current and outputs the alternating current, and a control circuit 253 that outputs a control signal for controlling the main converter circuit 251 to the main converter circuit 251.

[0098] The load 300 is a three-phase electric motor that is driven by AC power provided by the power conversion device 250 . The load 300 is not limited to any particular application and is an electric motor that is attached to various electrical devices, such as. B. an electric motor for a hybrid vehicle, an electric vehicle, a rail vehicle, an elevator or an air conditioner.

[0099] The details of the power conversion device 250 are described below. The main converter circuit 251 includes a switching element and a freewheeling diode (not shown), converts the DC power supplied from the power supply 150 into AC power by switching the switching element, and supplies the AC power to the load 300. Although there are various specific circuit structures of the main converter circuit 251, the Main converter circuit 251 according to the present embodiment may be a two-level three-phase full-bridge circuit having six switching elements and six free wheeling diodes arranged anti-parallel to the respective switching elements.

[0100] Each switching element and each free wheeling diode of the main converter circuit 251 is constituted by a semiconductor module 252 corresponding to any one of the first to ninth embodiments described above. The six switching elements are connected in series every two switching elements to form upper and lower arms, and each of the upper and lower arms forms each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of the upper and lower arms, i.e. the three output terminals of the main converter circuit 251, are connected to the load 300.

[0101] Further, the main converter circuit 251 includes a driver circuit (not shown) that drives each switching element. The driver circuit can be integrated into the semiconductor module 252 or formed separately from the semiconductor module 252 . The driver circuit generates a drive signal for driving the switching elements of the main converter circuit 251 and supplies the drive signal for driving the electrodes of each switching element of the main converter circuit 251.

[0102] Specifically, the driving circuit outputs to the control electrode of each switching element a driving signal for turning on the switching element and a driving signal for turning off the switching element in accordance with a control signal from the control circuit 253, which will be described later. When the switching element is kept in the ON state, the drive signal is a voltage signal (ON signal) equal to or higher than a threshold voltage of the switching element, and when the switching element is kept in the OFF state, the drive signal is a voltage signal (OFF signal) equal to or lower than the threshold voltage of the switching element.

[0103] The control circuit 253 controls the switching elements of the main converter circuit 251 so that the desired power is supplied to the load 300 . Specifically, based on the power to be supplied to the load 300, the control circuit 253 calculates a time (ON time) during which each switching element of the main converter circuit 251 should be turned on. For example, the control circuit 253 can control the main converter circuit 251 by PWM control that modulates the ON time of the switching element according to the voltage to be output.

[0104] Then, the control circuit 253 outputs a control command (control signal) to the driving circuit included in the main conversion circuit 251 so that the ON signal is output to the switching element to be turned on and the OFF signal is output to the switching element to be turned off at all times. The driver circuit outputs the ON signal or the OFF signal as a driving signal to the control electrode of each switching element in accordance with the control signal.

[0105] The power conversion device according to the present embodiment uses the power semiconductor device 100 according to any one of the first to ninth embodiments as the switching element and the freewheeling diode of the main converter circuit 251, so that the reliability of the power conversion device can be improved.

[0106] The present embodiment has described the example in which the present invention is applied to a two-level three-phase inverter. However, the present invention is not limited to this and can be applied to various power conversion devices. In the present embodiment, the two-level power conversion device has been described.

[0107] However, a three-level or multi-level power conversion device can also be used, or the present invention can be applied to a single-phase inverter when power is supplied to a single-phase load. In addition, in a case where power is supplied to a DC load or the like, the present invention can also be applied to a DC / DC converter or an AC / DC converter.

[0108] In addition, the power conversion device to which the present invention is applied is not limited to the above-described device used for an electric motor serving as a load, and can be used, for example, as a power supply device of an electric discharge machine, a laser beam machine, an induction heating cooker or a non-contact power supply system and used as a power conditioner of a solar power generation system, a power storage system, or the like.

[0109] It should be understood that the embodiments presented herein are in all respects only illustrative and not restrictive. At least two of the embodiments disclosed herein can be combined as long as there is no contradiction. The scope of the present application is defined by the claims, not the above description, and is intended to include meanings equivalent to the claims and any modifications within the scope. Reference List 1 power semiconductor element 2a first metal wiring element 2b second metal wiring member 2c third metal wiring element 3 heat spreaders 4a first metal connecting element 4b second metal connecting element 5 molding resin area 6 adhesive sheets 6a central area 6b outer peripheral area 6c outer peripheral surface 7 carrier element 7a body area 7b rib 8 flow prevention frames 8a first area 8b second area 8c third area 8d fourth area 8e fifth area 8f sixth area 8g seventh area 9 interface 9a first center 9b first corner area 11 slots 11a side surface 11b bottom surface 12 recess 13a first layer 13b second layer 13c third layer 15 top 15a second center 15b second corner area 16 upper surface 18 inner peripheral surface 18a corner area 18b side area 28 outer wall surface 38 first face 48 second face 61 column 100 power semiconductor device 150 power supply 200 power module unit 250 power converter device 251 main converter circuit 252 semiconductor module 253 control circuit 300 load QUOTES INCLUDED IN DESCRIPTION

[0000] This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Patent Literature Cited

[0000] JP2012174965A

[0008] JP 2012

[0009] JP 174965 A

[0009]

Claims

[1] Power semiconductor device comprising the following: - a power module unit; - an adhesive surface body connected to the power module unit; - a support element connected to the power module unit, wherein the adhesive surface body is arranged between the power module unit and the support element; and - a flow-prevention frame arranged sandwich-like between the power module unit and the support element and placed around the adhesive surface body, wherein the adhesive surface body has an outer circumferential surface adjacent to an inner circumferential surface of the flow-prevention frame, and a value obtained by dividing a maximum value of an internal pressure on the outer circumferential surface by a minimum value of the internal pressure is less than or equal to 10. [2] Power semiconductor device according to claim 1, wherein the inner circumferential surface has a rectangular shape with a corner area that is rounded in the direction of the thickness of the adhesive surface body, and wherein the corner area has a radius of curvature that is greater than or equal to 1 / 30 of the length of a long side of the rectangular shape. [3] Power semiconductor device according to claim 1, wherein the inner circumferential surface is circular when viewed in the direction of the thickness of the adhesive surface body. [4] Power semiconductor device according to claim 1, wherein the adhesive surface body has a central area surrounded by the outer circumferential surface, and wherein the adhesive surface body has a thickness that increases from the central area towards the outer circumferential surface. [5] Power semiconductor device according to claim 1, wherein the flow prevention frame comprises a single layer. [6] Power semiconductor device according to claim 5, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is curved so that it projects inwards, and wherein the flow prevention frame has a width that decreases from the center of the side area towards the corner area. [7] Power semiconductor device according to claim 5, wherein the flow prevention frame is made of a porous body, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is linear, and wherein a pore diameter of the porous body increases from the center of the side region towards the corner region. [8] Power semiconductor device according to claim 5, wherein the flow prevention frame is made of a porous body, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is linear, and wherein the flow-prevention frame has a width which decreases from the center of the side region towards the corner region. [9] Power semiconductor device according to claim 1, wherein the flow-prevention frame has two or more layers of different materials. [10] Power semiconductor device according to claim 9, wherein the inner circumferential surface has a corner region and a side region which, viewed in a thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is curved so that it projects inwards, and wherein the flow prevention frame has a width that decreases from the center of the side area towards the corner area. [11] Power semiconductor device according to claim 9, wherein the flow prevention frame is made of a porous body, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is linear, and wherein a pore diameter of the porous body increases from the center of the side region towards the corner region. [12] Power semiconductor device according to claim 9, wherein the flow prevention frame is made of a porous body, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the side region is linear, and wherein the flow-prevention frame has a width which decreases from the center of the side region towards the corner region. [13] Power semiconductor device according to claim 9, wherein the inner circumferential surface has a corner region and a side region which, viewed in the thickness direction of the adhesive surface body, is continuous with the corner region, wherein the inner circumferential surface is formed with a multitude of recesses, and the density of the multitude of recesses decreases from the center of the side area towards the corner area. [14] Power converter device comprising the following: - a main converter circuit comprising a power semiconductor device according to any one of claims 1 to 13, wherein the main converter circuit converts the input power and outputs the converted power; and - a control circuit for outputting a control signal to the main converter circuit for controlling the main converter circuit.

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