METHOD FOR MANUFACTURING AT LEAST ONE OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE
Patent Information
- Application Number
- DE112022007239
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2022-06-29
- Publication Date
- 2025-03-20
Smart Images

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Abstract
Description
[0001] An optoelectronic device and a method for producing an optoelectronic device are specified. The optoelectronic device is, for example, a semiconductor device capable of emitting electromagnetic radiation, for example, in the infrared, visible, or ultraviolet spectral range.
[0002] In an exemplary method for manufacturing an optoelectronic semiconductor device, a light-emitting semiconductor component of the optoelectronic semiconductor device can be encapsulated using a molding process. However, for semiconductor devices that emit white light, the molding process can result in low optical yield, for example, a broad distribution of color temperatures, due to the limited performance of conventional molding machines.
[0003] One object, among others, is to provide a method for producing an optoelectronic device with improved efficiency. This object is achieved, among other things, by the method according to the independent claim. Further embodiments and further developments of the method are the subject of the dependent claims.
[0004] A further object, among others, is to provide an optoelectronic device with improved efficiency. This object is achieved, among other things, by the optoelectronic device according to the independent claim. Further embodiments and further developments of the optoelectronic device are the subject of the dependent claims.
[0005] According to at least one embodiment of a method for producing at least one optoelectronic device, this comprises a step of providing a substrate body. The substrate body can, for example, be flat, wherein a height of the substrate body is small compared to its length and width. The height can determine a vertical dimension measured along a vertical direction, and the length and width can be lateral dimensions measured along lateral directions that each run obliquely, in particular perpendicularly, to the vertical direction and that run obliquely, in particular perpendicularly, to one another.
[0006] According to at least one embodiment, the method comprises a step of providing a substrate frame on the substrate body, wherein the substrate frame has at least one recess. The at least one recess can penetrate the substrate frame completely, for example in the vertical direction, and extend from a first main surface to a second main surface of the substrate frame, wherein the second main surface is opposite the first main surface. The at least one recess can be laterally surrounded by one or more side walls of the substrate frame. The at least one recess can be substantially rectangular in a plan view of the first main surface, wherein "substantially" means "at least approximately". In particular, a substrate frame is provided which has a plurality of recesses.
[0007] The substrate frame can be provided with one of its main surfaces on a main surface of the substrate body. In the context of the present application, a "main surface" of an element is a surface that is substantially parallel to a main extension plane of the element.
[0008] According to at least one embodiment, the method comprises a step of providing at least one optoelectronic component on the substrate body. The optoelectronic component can be, for example, an unpackaged semiconductor chip. Alternatively, the optoelectronic component can also be a packaged semiconductor chip.
[0009] The at least one optoelectronic component can be provided on a main surface of the substrate body. In particular, the substrate frame and the at least one optoelectronic component are positioned relative to one another such that the at least one optoelectronic component is arranged in the at least one recess. For example, the substrate frame is first provided on the substrate body, and then the at least one optoelectronic component is arranged in the at least one recess. Alternatively, the at least one optoelectronic component can first be mounted on the substrate body, and the substrate frame can then be arranged on the substrate body.
[0010] According to at least one embodiment, the method comprises a step of providing a filler material in the at least one recess such that the at least one optoelectronic component is covered by the filler material. In particular, the at least one optoelectronic component can be encapsulated by the filler material. Preferably, the filler material is provided by a casting process. The casting process comprises filling the filler material as a liquid material into the at least one recess and allowing the filler material to solidify.
[0011] According to at least one embodiment of a method for producing at least one optoelectronic device, this comprises the following steps, preferably in the order mentioned: - Providing a substrate body, - Providing a substrate frame on the substrate body, wherein the substrate frame has at least one recess, - Providing at least one optoelectronic component on the substrate body, wherein the substrate frame and the at least one optoelectronic component are placed relative to one another such that the at least one optoelectronic component is arranged in the at least one recess, - Providing a filling material in the at least one recess such that the at least one optoelectronic component is covered by the filling material, wherein the filling material is provided by a casting process.
[0012] The casting process has the advantage that it is lower cost than, for example, a compression molding process.
[0013] According to at least one embodiment or configuration, the substrate frame is designed with a height that is lower the higher the viscosity of the filler material. The substrate frame or the one or more side walls of the substrate frame, which laterally delimit the at least one recess and thus the filler material in the at least one recess, is / are provided to prevent the filler material from flowing away and to concentrate the filler material in a specific region of the substrate body. With a filler material with a higher viscosity, a resistance to deformation or flow away is higher than with a filler material with a lower viscosity, so that a barrier or side wall(s) can be smaller. For example, the height of the substrate frame is at least as great as the height of the at least one optoelectronic component.
[0014] According to at least one embodiment or configuration, the filler material is dispensed into the at least one recess using a pouring needle. The pouring needle enables precise dosing of the filler material into the at least one recess. The pouring process thus offers a high degree of accuracy.
[0015] According to at least one embodiment or configuration, the filler material comprises or consists of a plastic material. The filler material can comprise or consist of at least one of the following materials: silicone, epoxy. In particular, the filler material or at least one of its ingredients is selected from a group of materials suitable for encapsulating an optoelectronic component, such as a light-emitting semiconductor component.
[0016] According to at least one embodiment or configuration, the casting process is followed by a centrifugation process. In particular, the centrifugation process is carried out before the filler material solidifies. The centrifugation process comprises, for example, rotating the assembly comprising the substrate body, substrate frame, and filler material about a vertical axis, for example, a vertical center axis of the assembly.
[0017] According to at least one embodiment or configuration, the filler material comprises an additive material. The additive material may have a higher density than the other ingredient(s) of the filler material, for example, than the plastic material such as silicone or epoxy, as mentioned above. During the centrifugation process, radial acceleration may cause the additive material with a higher density to settle closer to the substrate body, while the substance(s) with a lower density rise(s) away from the substrate body to a top surface of the additive material. Therefore, the additive material may sediment due to the centrifugation process and form a sediment layer. And the substance(s) with a lower density, such as silicone or epoxy, may form a covering layer on the sediment layer.The covering layer, which can protect the sediment layer, can improve the lifetime of the at least one optoelectronic device produced in this way.
[0018] According to at least one embodiment or configuration, the filler material comprises an additional material that is a phosphor material. The phosphor material is a wavelength-converting material designed to convert primary radiation of a first wavelength, generated, for example, in an optoelectronic component, into secondary radiation of a second, longer wavelength that differs from the first wavelength. Due to the relatively high precision of the casting process, the optical yield of an optoelectronic device that emits mixed-color light, for example, white light, can be improved.
[0019] According to at least one embodiment or configuration, a substrate body is provided that comprises or consists of at least one of the following materials: metal, ceramic. The substrate body can be, for example, a structured substrate body, for example a lead frame, which can comprise or consist of copper.
[0020] According to at least one embodiment or configuration, a substrate frame is provided which comprises or consists of glass and / or a plastic material, for example an epoxy.
[0021] According to at least one embodiment or configuration, the substrate frame is a molded body. In other words, the substrate frame can be manufactured by a molding process and applied directly to the substrate body. Alternatively, the substrate frame can be a separate, self-supporting element that is attached to the substrate body, for example, by a fastening layer.
[0022] According to at least one embodiment or configuration, a plurality of optoelectronic devices are produced, each comprising a substrate element, an optoelectronic component arranged on the substrate element, and a cover element arranged on the optoelectronic component, wherein the production of the plurality of optoelectronic devices comprises: - Providing a plurality of optoelectronic components on the substrate body, wherein the substrate frame and the plurality of optoelectronic components are placed relative to one another such that at least two optoelectronic components are arranged in the at least one recess, and - Performing a dicing process through the filler material and the substrate body between adjacent optoelectronic components.
[0023] The filler material can be divided into a plurality of cover elements during singulation. The at least one cover element formed from the filler material can correspond to the filler material, in particular with regard to its layer structure and / or its material composition, as mentioned above. Furthermore, the substrate body can be divided into a plurality of substrate elements during singulation. The at least one substrate element formed from the substrate body can correspond to the substrate body, in particular with regard to its physical structure and / or its material composition, as mentioned above.
[0024] Placing more than one optoelectronic component in a recess enables efficient fabrication of a plurality of optoelectronic devices.
[0025] According to at least one embodiment or configuration, the optoelectronic components are arranged in rows and columns in the at least one recess. In particular, the optoelectronic components are arranged in rows and columns in each recess.
[0026] According to at least one embodiment or configuration, the substrate frame is provided with a plurality of recesses arranged in rows and columns.
[0027] The method described above is suitable for producing at least one optoelectronic device, which is described in more detail below. The features described in connection with the method can therefore also apply to the optoelectronic device, and vice versa.
[0028] According to at least one embodiment of an optoelectronic device, the device comprises a substrate element and an optoelectronic component arranged on the substrate element. The substrate element can have a first contact region and a second contact region for electrically contacting the optoelectronic device from the outside. And the optoelectronic component can be electrically connected to the first contact region and the second contact region. For example, the optoelectronic component can be mounted on one of the contact regions and electrically connected to the other contact region, for example by a wire bond. Alternatively, the optoelectronic component can be mounted on a mounting region of the substrate element that is different from the first and second contact regions and can be electrically connected to the first and second contact regions, for example by a wire bond in each case.
[0029] According to at least one embodiment, the optoelectronic device comprises a cover element arranged on the optoelectronic component. The cover element can cover a main surface of the optoelectronic component, wherein the main surface is arranged on a side of the optoelectronic component facing away from the substrate element. Furthermore, the cover element can cover one or more side surfaces of the optoelectronic component, wherein the one or more side surfaces extend obliquely, for example perpendicularly, to the main surface. Furthermore, the cover element can be arranged on the substrate element, for example on a main surface of the substrate element facing the optoelectronic component.
[0030] According to at least one embodiment, the cover element comprises a first cover layer and a second cover layer, wherein the first cover layer is arranged at least partially between the optoelectronic component and the second cover layer and is a sediment layer. As already mentioned, the filler material from which the cover element is produced can be subjected to a centrifugation process, whereby the additional material can sediment and form a sediment layer, resulting in a first cover layer on the optoelectronic component. And the substance(s) with lower density, which can be one or more plastic materials such as silicone and / or epoxy, can form a cover layer on the sediment layer and result in a second cover layer on the first cover layer. Thus, the second cover layer can comprise or consist of at least one of the following materials: silicone, epoxy.The second capping layer, which can protect the first capping layer or the sediment layer, can improve the lifetime of the optoelectronic device.
[0031] According to at least one embodiment of an optoelectronic device, it comprises: - a substrate element, - an optoelectronic component arranged on the substrate element, and - a cover element arranged on the optoelectronic component and having a first cover layer and a second cover layer, wherein the first cover layer is arranged at least partially between the optoelectronic component and the second cover layer and is a sediment layer.
[0032] According to at least one embodiment or configuration, the first cover layer is a phosphor layer. And the optoelectronic component can be a light-emitting semiconductor component. The phosphor layer can be configured to convert primary radiation of a first wavelength, for example, blue light, generated by the light-emitting semiconductor component into secondary radiation of a second, longer wavelength, for example, yellow light, so that the optoelectronic device emits mixed-color light, for example, white light. Due to the casting process, which offers a relatively high degree of precision, an optical yield of the optoelectronic device emitting mixed-color light, for example, white light, can be improved.
[0033] According to at least one embodiment or configuration, the optoelectronic device may be a so-called QFN (Quad Flat NO Leads) device, which enables surface mounting and comprises a plastic-encapsulated package with a planar copper leadframe substrate that is nearly chip-sized. In other words, the cover element may be chip-sized, and the substrate element may be a copper leadframe element.
[0034] The optoelectronic device presented here can be a light-emitting semiconductor device suitable for lighting, AR (augmented reality), VR (virtual reality) and display applications, or a sensor device.
[0035] Further preferred embodiments and further developments of the optoelectronic device and of the method for producing the optoelectronic device emerge from the exemplary embodiments explained below in connection with the figures. The Fig. 1A to 1C, 2 and 3A to 3C show schematic cross-sectional and plan views of steps of an embodiment of a method for producing at least one optoelectronic device, The Fig. 4 and Fig. 5 show schematic cross-sectional views of various embodiments of optoelectronic devices, The Fig. 6A, Fig. 6B, Fig. 7, Fig. 8, Fig. 9A, Fig. 9B and Fig. 10 show schematic cross-sectional, side and top views of steps of a comparative example of a method for manufacturing at least one optoelectronic device.
[0036] Identical, similar, or functionally identical elements may be identified by the same reference numerals in the figures. The figures are schematic representations and therefore not necessarily to scale. Relatively small elements, and in particular layer thicknesses, may be exaggerated for clarity.
[0037] In connection with the Fig. 1A to 3C, an embodiment of a method for producing at least one optoelectronic device is described.
[0038] The method comprises providing a substrate body 1 which, in the schematic plan view of Fig. 1A and the schematic cross-sectional views of the Fig. 1B and Fig. 1C. The Fig. 1B is along a plane BB' and the cross section shown in Fig. The cross-section shown in Figure 1C was taken along the plane CC'.
[0039] In this embodiment, the substrate body 1 is flat and has a height h that is small compared to its length l and its width w. The height determines a vertical dimension, measured along a vertical direction V, and the length l and the width w determine lateral dimensions, measured along lateral directions L1, L2, which each run obliquely, in particular perpendicularly, to the vertical direction V and which run obliquely, in particular perpendicularly, to each other.
[0040] In this embodiment, the substrate body 1 is a metal body. The substrate body 1 is, for example, a structured substrate body, for example, a lead frame, which may comprise copper or be made of copper. Alternatively, the substrate body 1 may be, for example, a ceramic body.
[0041] The method further comprises providing a substrate frame 2 on the substrate body 1, wherein the substrate frame 2 has a plurality of recesses 3 (see Fig. 1A to 1C). The recesses 3 penetrate the substrate frame 2 completely in the vertical direction V and extend from a first main surface 2A to a second main surface 2B of the substrate frame 2, wherein the second main surface 2B is opposite the first main surface 2A (see Fig. 1A and Fig. 1C). The recesses 3 are each laterally surrounded by side walls 20 of the substrate frame 2. The recesses 3 each have a substantially rectangular shape in a plan view of the first main surface 2A, where "substantially" means "at least approximately." The substrate frame 2 has a grid-like shape.
[0042] In this embodiment, the substrate frame 2 is a molded body produced by a molding process on the substrate body 1 and comprises or consists of a plastic material such as epoxy. However, it is also possible for the substrate frame 2 to be a separate, self-supporting element attached to the substrate body 1. In this case, the substrate frame 2 can comprise or consist of glass.
[0043] The substrate frame 2 is provided with its second main surface 2B on a main surface 1A of the substrate body 1 (see Fig. 1C).
[0044] The method further comprises providing a plurality of optoelectronic components 4 on the substrate body 1. The optoelectronic components 4 are arranged on the main surface 1A of the substrate body 1. The substrate frame 2 and the optoelectronic components 4 are positioned relative to one another such that a plurality of optoelectronic components 4 are arranged in each recess 3. The optoelectronic components 4 are arranged in rows and columns in the recesses 3. In other words, the optoelectronic components 4 of each recess 3 are arranged in a matrix-like manner.
[0045] The substrate frame 2 can first be mounted on the substrate body 1, and the optoelectronic components 4 can then be arranged in the recesses. Alternatively, the optoelectronic components 4 can first be mounted on the substrate body 1, and the substrate frame 2 can then be arranged on the substrate body 1.
[0046] The optoelectronic components 4 are, for example, bare semiconductor chips. Alternatively, the optoelectronic components 4 can also be packaged semiconductor chips. In particular, the optoelectronic components 4 are light-emitting semiconductor components that emit electromagnetic radiation in the ultraviolet to infrared spectral range.
[0047] As shown in the cross-sectional view of Fig. 2, the method further comprises providing a filling material 5 in the recesses 3. The recesses 3 can be filled successively with the filling material 5.
[0048] The filling material 5 is provided by a casting process. The casting process involves pouring the filling material 5 as a liquid material into the recesses 3 and allowing the filling material to solidify. The filling material 5 is dispensed using a casting needle 6, which enables precise dosing of the filling material 5 into the recesses 3. The casting process thus offers a high degree of accuracy.
[0049] The substrate frame 2 is formed with a height h1 that decreases the higher the viscosity of the filler material 5. The substrate frame 2 or the side walls 20 of the substrate frame 2, which laterally delimit the recesses 3 and thus the filler material 5 in the recesses 3, is / are provided to prevent the filler material 5 from flowing away and to concentrate the filler material 5 in regions of the substrate body 1 in which the optoelectronic components 4 are arranged. With a filler material 5 having a higher viscosity, resistance to deformation or flow away is higher than with a filler material 5 having a lower viscosity, so that a barrier or the side walls 20 can be smaller. For example, a height h1 of the substrate frame 2 is at least as large as a height h2 of the optoelectronic components 4.
[0050] The filling material 5 comprises, for example, or consists of a plastic material. The filling material can comprise or consist of at least one of the following materials: silicone, epoxy.
[0051] The filler material 5 is filled into the recesses 3 such that the optoelectronic components 4 are covered, for example, encapsulated, by the filler material 5. The filler material 5 or at least one of its components is thus selected from a group of materials suitable for encapsulating the optoelectronic components 4.
[0052] After the solidification of the filling material 5, a separation process takes place through the filling material 5 and the substrate body 1 between adjacent optoelectronic components 4 (see Fig. 3A to 3C). The separation process occurs along separation planes SS' parallel to the vertical direction V and the lateral direction L2. Furthermore, the separation process occurs along separation planes S1S1' parallel to the vertical direction V and the lateral direction L1.
[0053] Thus, the arrangement comprising the substrate body 1, the substrate frame 2 and the filling material 5 can be divided into a plurality of optoelectronic devices 7, wherein the filling material 5 is divided into a plurality of cover elements 9 and the substrate body 1 into a plurality of substrate elements 8 during the singulation.
[0054] The placement of more than one optoelectronic component 4 in a recess enables efficient production of a plurality of optoelectronic devices 7.
[0055] Before solidification, the method may include a centrifugation process following the casting process (not shown). The centrifugation process includes, for example, rotating the assembly comprising the substrate body 1, the substrate frame 2, and the filler material 5 about a vertical axis, for example, a vertical center axis of the assembly.
[0056] The filler material 5 may comprise an additional material (not shown). In particular, the additional material has a higher density than the one or more other ingredients of the filler material 5, which, as described above, may be plastic materials such as silicone or epoxy.
[0057] During the centrifugation process, radial acceleration causes the higher-density additive material to settle closer to the substrate body 1, while the lower-density material(s) rise(s) away from the substrate body 1 to a surface of the additive material. Therefore, the centrifugation process causes the additive material to settle and form a sediment layer. The lower-density material(s), such as silicone and / or epoxy, forms a capping layer on top of the sediment layer. This capping layer, which can protect the sediment layer, can improve the lifetime of the optoelectronic devices fabricated in this way.
[0058] The filler material 5 comprises, for example, an additional material that is a phosphor material. The phosphor material is a wavelength-converting material designed to convert primary radiation of a first wavelength, generated, for example, in the optoelectronic components 4, into secondary radiation of a second, possibly longer wavelength that differs from the first wavelength. Due to the relatively high precision of the casting process, the optical yield of the optoelectronic devices 7 that emit mixed-color light can be improved.
[0059] Furthermore, the method can have all the features, properties and advantages mentioned in connection with the further embodiments.
[0060] The Fig. 4 and Fig. 5 show schematic cross-sectional views of various embodiments of optoelectronic devices 7 which can be manufactured using a method as described in connection with the Fig. 1 to 3.
[0061] According to the embodiments, the optoelectronic device 7 comprises a substrate element 8 and an optoelectronic component 4 arranged on the substrate element 8. Since the substrate element 8 can be formed from the substrate body 1 as mentioned above (see Fig. 1 to 3), the substrate element 8 can correspond to the substrate body 1, in particular with regard to its physical structure and / or its material composition as mentioned above.
[0062] The substrate element 8 comprises a first contact region 81 and a second contact region 82 for electrically contacting the optoelectronic device 7 from the outside. The optoelectronic component 4 is electrically connected to the first contact region 81 and the second contact region 82. The optoelectronic component 4 is attached to a mounting region 83 of the substrate element 8 by a fastening layer 13, wherein the mounting region 83 is different from the first contact region 81 and the second contact region 82. The optoelectronic component 4 is electrically connected to the first and second contact regions 81, 82 by a wire bond 12, respectively. Alternatively, the optoelectronic component 4 can be mounted on one of the contact regions 81, 82 and electrically connected to the other by a wire bond. A separate mounting region 83 is not required in this case.
[0063] The optoelectronic device 7 comprises a cover element 9 arranged on the optoelectronic component 4. The cover element 9 covers a main surface 4A of the optoelectronic component 4, wherein the main surface 4A is arranged on a side of the optoelectronic component 4 facing away from the substrate element 8. Furthermore, the cover element 9 covers side surfaces 4B of the optoelectronic component 4, wherein the side surfaces 4B extend obliquely, for example perpendicularly, to the main surface 4A. Furthermore, the cover element 9 is arranged on the substrate element 8, for example on a main surface 8A of the substrate element 8 facing the optoelectronic component 4, and in spaces between the various regions 81, 82, 83 of the substrate element 8.
[0064] The cover element 9 can be formed from the filling material 5 (see for example Fig. 3A to 3C) and thus correspond to the filling material 5, in particular with regard to its layer structure and / or its material composition as mentioned above.
[0065] While the Fig. 4 has a single-layer structure, the cover element 9 shown in Fig. The cover element 9 shown in Figure 5 has a multi-layer structure.
[0066] The Fig. The cover element 9 shown in Figure 4 may comprise a base material, for example a plastic material such as silicone and / or epoxy, and an additional material, for example a phosphor material, which is distributed in the base material. Fig. The optoelectronic device 7 shown in Figure 4 can be manufactured without performing a centrifugation process.
[0067] The Fig. The cover element 9 shown in Fig. 5 comprises a first cover layer 10 and a second cover layer 11, wherein the first cover layer 10 is arranged at least partially between the optoelectronic component 4 and the second cover layer 11.
[0068] The first cover layer 10 is a sediment layer. In this case, a centrifugation process is carried out, as described in connection with the Fig. 1 to 3, wherein the filler material 5 comprises an additional material that sediments and forms a sediment layer, yielding the first covering layer 10 on the optoelectronic component 4, while the lower-density material(s), for example, plastic material(s) such as silicone and / or epoxy, forms / forms a covering layer on the sediment layer and yields / yields the second covering layer 11 on the first covering layer 10. The first covering layer 10 is, for example, a phosphor layer.
[0069] The optoelectronic component 4 can be a light-emitting semiconductor component, wherein the phosphor layer 10 is configured to convert primary radiation of a first wavelength, for example, blue light, generated by the light-emitting semiconductor component 4 into secondary radiation of a second, longer wavelength, for example, yellow light, so that the optoelectronic device 7 emits mixed-color light, for example, white light. Due to the relatively high precision of the casting process, the optical yield of the optoelectronic device 7, which emits mixed-color light, for example, white light, can be improved.
[0070] The optoelectronic device 7 may be a so-called QFN device (QFN: Quad Flat NO Leads) which enables surface mounting and has a plastic-encapsulated housing or cover element 9 with a planar copper lead frame substrate or substrate element 8 which is almost chip-sized.
[0071] Furthermore, the optoelectronic device 7 can have all the features, properties and advantages mentioned in connection with the method.
[0072] In connection with the Fig. 6A to 10, a comparative example of a method for manufacturing optoelectronic devices is described.
[0073] As shown in the schematic cross-sectional view of Fig. 6A and in the schematic plan view of Fig. 6B, a substrate body 1' is provided with a plurality of optoelectronic components 4' arranged thereon (see Fig. 6B).
[0074] As shown in the schematic cross-sectional views of the Fig. 7 and Fig. As shown in Figure 8, a molded housing 14 is provided, and the substrate body 1' with the plurality of optoelectronic components arranged thereon is provided with a molding compound 15 in a compression molding process. A centrifugation process cannot be performed because the molding compound 15 does not have the required liquid consistency.
[0075] As shown in the schematic side view of Fig. 9A and in the schematic plan view of Fig. 9B, the encapsulated assembly is turned over and separated (see Fig. 10).
[0076] Compared to the casting process, the cost of the molding process is higher and the optical yield is lower due to the limited performance of the molding machine.
[0077] The scope of the invention is not limited to the examples mentioned above. The invention is embodied by any novel feature and any combination of features, in particular by any combination of the features recited in the claims, even if this feature or combination of features is not explicitly recited in the claims or in the examples. Reference symbol 1, 1' substrate body 1A main area 2 substrate frames 2A first main area 2B second main area 3 recess 4, 4' optoelectronic component 4A Main Area 4B side surface 5 Filling material 6 watering needle 7 optoelectronic device 8 Substrate element 8A Main Area 9 Cover element 10 first covering layer 11 second covering layer 12 wire bond 13 Fixing layer 14 molded housings 15 Encapsulation 20 side wall 81 first contact area 82 second contact area 83 Assembly area h, h1, h2 height l length w width BB' level CC' level SS', S1S1' parting line V vertical direction L1, L2 lateral direction
Claims
[1] A method for producing at least one optoelectronic device (7), the method comprising: - providing a substrate body (1), - providing a substrate frame (2) on the substrate body (1), wherein the substrate frame (2) has at least one recess (3), - providing at least one optoelectronic component (4) on the substrate body (1), wherein the substrate frame (2) and the at least one optoelectronic component (4) are placed relative to one another such that the at least one optoelectronic component (4) is arranged in the at least one recess (3), - Providing a filling material (5) in the at least one recess (3) such that the at least one optoelectronic component (4) is covered by the filling material (5), wherein the filling material (5) is provided by a casting process. [2] Method according to the preceding claim, wherein the substrate frame (2) is formed with a height (h1) which is at least as large as a height (h2) of the at least one optoelectronic component (4). [3] Method according to one of the preceding claims, wherein the filling material (5) comprises or consists of at least one of the following materials: silicone, epoxy. [4] Method according to one of the preceding claims, wherein the casting process is followed by a centrifuging process. [5] Method according to one of the preceding claims, wherein the filling material (5) comprises an additional material. [6] A method according to claim 5 in conjunction with claim 4, wherein the additional material sediments due to the centrifugation process and forms a sediment layer. [7] Method according to one of the preceding claims, wherein the filler material (5) comprises an additional material which is a phosphor material. [8] Method according to one of the preceding claims, wherein the substrate body (1) comprises or consists of at least one of the following materials: metal, ceramic. [9] Method according to one of the preceding claims, wherein the substrate frame (2) comprises or consists of at least one of the following materials: epoxy, glass. [10] Method according to one of the preceding claims, wherein the substrate frame (1) is a shaped body. [11] Method according to one of the preceding claims, wherein a plurality of optoelectronic devices (7) are produced, each comprising a substrate element (8), an optoelectronic component (4) arranged on the substrate element (8) and a cover element (9) arranged on the optoelectronic component (4), wherein the production of the plurality of optoelectronic devices (7) comprises: - providing a plurality of optoelectronic components (4) on the substrate body (1), wherein the substrate frame (2) and the plurality of optoelectronic components (4) are placed relative to one another such that at least two optoelectronic components (4) are arranged in the at least one recess (3), and - Carrying out a separation process through the filling material (5) and the substrate body (1) between adjacent optoelectronic components (4). [12] Method according to the preceding claim, wherein the optoelectronic components (4) are arranged in rows and columns in the at least one recess (3). [13] Method according to one of the preceding claims, wherein the substrate frame (2) is provided with a plurality of recesses (3) arranged in rows and columns. [14] Optoelectronic device (7) comprising - a substrate element (8), - an optoelectronic component (4) arranged on the substrate element (8), and - a cover element (9) which is arranged on the optoelectronic component (4) and has a first cover layer (10) and a second cover layer (11), wherein the first cover layer (10) is arranged at least partially between the optoelectronic component (4) and the second cover layer (11) and is a sediment layer. [15] Optoelectronic device (7) according to the preceding claim, wherein the first cover layer (10) is a phosphor layer. [16] Optoelectronic device (7) according to claim 14 or 15, wherein the second cover layer (11) comprises or consists of at least one of the following materials: silicone, epoxy. [17] Optoelectronic device (7) according to one of claims 14 to 16, wherein the optoelectronic component (4) is a light-emitting semiconductor component.