Semiconductor device and photodetection device

Abstract

A semiconductor device according to one embodiment of the disclosure comprises: a first semiconductor layer with a first surface and a second surface facing each other and comprising one or a plurality of first impurity regions on the first surface; a second semiconductor layer stacked on one side of the first surface of the first semiconductor layer; one or a plurality of through-wires penetrating the second semiconductor layer and each electrically coupled to the one or the plurality of first impurity regions of the first semiconductor layer; and a first etch stopper film selectively provided only around the one or the plurality of through-wires in the vicinity of the first surface of the first semiconductor layer.

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