Power conversion device

DE112023007046T5Undetermined Publication Date: 2026-08-06MITSUBISHI ELECTRIC CORP
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
MITSUBISHI ELECTRIC CORP
Filing Date
2023-10-19
Publication Date
2026-08-06

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

One objective is to provide a technique capable of uniformly establishing thermal conductivity within a plane of a heat-radiating film. A power conversion device comprises a semiconductor device, a heat sink, a heat-radiating film positioned between the semiconductor device and the heat sink, and a housing that covers the top and side portions of the semiconductor device. The semiconductor device includes a semiconductor element, an insulating layer, a first circuit structure, and a second circuit structure arranged on the top and bottom surfaces of the insulating layer, respectively, and a sealing element. The housing is fixed to the heat sink while pressing the top portion of the semiconductor device toward one side of the heat sink.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Semiconductor device, optical semiconductor device and heat dissipation member

    JP2013149952A

  • JP002013149952A