Semiconductor device and method for manufacturing the same

DE112023007180T5Undetermined Publication Date: 2026-10-22MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
DE112023007180
Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-12-19
Filing Date
2023-12-19
Publication Date
2026-10-22

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Abstract

A semiconductor chip (3) has an upper electrode (3b). A metal terminal electrode (6) is positioned above the semiconductor chip (3) and connected to the upper electrode (3b) by solder (7). Sealing material (12) seals the semiconductor chip (3), the solder (7), and the metal terminal electrode (6). The metal terminal electrode (6) has a through-hole (6a) at a position opposite the upper electrode (3b). The solder (7) extends through the through-hole (6a) to an upper surface of the metal terminal electrode (6) and wets and spreads around the through-hole (6a) on the upper surface of the metal terminal electrode (6). A depression (7a) is formed on an upper surface of the solder (7) above the through-hole (6a). The sealing material (12) fills the depression (7a).
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Citation Information

Patent Citations

  • Power semiconductor device

    JP2008182074A