Semiconductor component and manufacturing process of a semiconductor component

Abstract

In a semiconductor device with a gate insulating film of varying thickness, gate insulating film failure is suppressed. The semiconductor device comprises: a plurality of trenches extending from the tops of source regions through a base region to a drift layer; and a pull-up electrode arranged to span the plurality of trenches and electrically connect gate electrodes in the respective trenches, wherein the gate insulating film has a first thickness in a cell section and a second thickness in a pull-up section, the second thickness being greater than the first thickness, and wherein, in a boundary section, the top of a gate electrode has a lower height than the top of the drift layer.

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