LIGHT DETECTION DEVICE AND ELECTRONIC DEVICE

Abstract

A light detection device is provided that can be configured to mitigate a reduction in area efficiency while simultaneously enhancing pinning on sidewalls. Specifically, the light detection device comprises: a semiconductor substrate; a plurality of photoelectric conversion sections configured as a two-dimensional array within the semiconductor substrate; and a trench insulation structure configured in a region between the photoelectric conversion sections within the semiconductor substrate, penetrating the semiconductor substrate from a bottom to a top surface.At least one section (one-sided solid-phase diffusion-free section) of the trench isolation structure is configured such that a p-type solid-phase diffusion layer is present on each of one side wall and the other side wall of any two facing side walls, so that only one bottom surface side section of one side wall is covered, while the entire other side wall is covered.

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