DEVICE STRUCTURE FOR INDUCING A LAYOUT-DEPENDENT THRESHOLD STRESS SHIFT

Abstract

Device layouts for integrated circuit devices are disclosed that incorporate a threshold voltage shift induced by the placement of metals with alternating work functions adjacent to active gates. The device layouts include a single epitaxy for active regions within the device, with common source / drain regions between the rows of active regions in the layouts. Metal gate sections above one or more rows of active regions can be replaced by metals with different work functions in inactive regions of the layout. The metal with the different work function in the inactive regions induces a threshold voltage shift in adjacent active transistors of the device layouts.