LIGHT EMISSIONING DEVICE

Abstract

The invention relates to a light-emitting device comprising a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and second layers. The light-emitting device further comprises a lower contact layer arranged on a bottom surface of the semiconductor layer stack and electrically contacting the second layer, a first electrical contact electrically contacting the lower contact layer, and a second electrical contact electrically contacting the first layer. A conversion layer is arranged on or above a top surface of the semiconductor layer stack opposite the bottom surface, configured to convert light of a first wavelength generated in the active region into light of a second wavelength.The light-emitting device further comprises measures to physically reduce the area in which light exits the semiconductor layer stack into the conversion layer, so that the conversion layer can be made smaller, in particular smaller than the lateral dimensions of the top surface.