HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD FOR ITS MANUFACTURING

Abstract

A high-electron-mobility transistor encloses a substrate (20) with a buffer layer (30) formed on the substrate. A recess (50) is formed in the buffer layer. A barrier layer (40) is formed on the buffer layer. A gate recess (55) is formed in the barrier layer, the gate recess overlapping the recess in the buffer layer. A drain terminal (60) is formed on a first side of the barrier layer. A source terminal (70) is formed on a second side of the barrier layer. An isolation structure (80) is formed within the gate recess near the drain terminal. A doped structure (90) is formed adjacent to the isolation structure within the gate recess near the source terminal. A gate terminal (100) is formed on the doped structure.