IMAGE SENSOR

Abstract

An image sensor 1 contains a plurality of one-dimensionally arranged pixels 11. Each pixel 11 contains a photoelectric conversion region and a resistance gate 31. The photoelectric conversion region converts incident light into charge. The resistance gate 31 is located on the photoelectric conversion region and applies an electric field with an intensity gradient to the photoelectric conversion region to generate a potential gradient that promotes the movement of charge in the photoelectric conversion region. The resistance gate 31 of each pixel 11 is partially located on a surface orthogonal to the direction of charge movement with respect to the photoelectric conversion region of each pixel 11.