Semiconductor component and method for manufacturing a semiconductor component

Abstract

A semiconductor device is provided that is capable of more effectively suppressing hole injection in a diode section and improving the recovery characteristic in a reverse-conducting IGBT (RC-IGBT), in which an IGBT and a diode are integrated on the same chip. A semiconductor device comprising an IGBT and a diode on the same chip.The diode comprises: a second groove formed between a third body layer and a fourth body layer of a first conduction type, both of which are formed on a main surface of a semiconductor substrate; a first electrode formed on a side wall on the side of the third body layer in the second groove with an insulating layer interposed; and a second electrode formed on a side wall on the side of the fourth body layer in the second groove with an insulating layer interposed, and configured to be spaced apart from the first electrode by at least one second insulating layer interposed. An n-layer with an impurity concentration higher than that of the semiconductor substrate is provided beneath the third and fourth body layers.