Surface-emitting laser device

Abstract

Surface-emitting laser device (Z1-Z5) comprising: - a first reflector layer (11); - an active light-emitting layer (12); - a second reflector layer (13), wherein the active light-emitting layer (12) is arranged between the first reflector layer (11) and the second reflector layer (13) to generate a laser beam (L); and- a current limiting structure (14) having a pn junction (SA, SB, SC) or a PIN junction; wherein when a bias voltage is applied to the surface-emitting laser device (Z1), the second-type doped layer (142) and the first-type doped layer (141) of the current limiting structure (14) are equivalently subjected to a blocking bias voltage less than a breakdown voltage, thereby bringing the current limiting structure (14) into a non-conducting state so that current flows only through the limiting hole (14H) of the current limiting structure (14);and wherein if an electrostatic discharge occurs in which the blocking bias applied to the current limiting structure (14) is higher than the flashover voltage, the current limiting structure (14) can transition into a conducting state, so that a large proportion of the electrostatic current passes through the current limiting structure (14).