Optoelectronic component comprising a multi-part housing body

Abstract

The invention relates to an optoelectronic component (1) comprising a housing body (2) and at least one semiconductor chip (8) that is situated on the housing body. Said housing body comprises a base part (13), with a connection body (16) that is provided with a conductive connection material (6, 7) and a reflector part (14) comprising a reflector body (23), provided with a reflector material (9). The connection body and the reflector body are pre-formed separately and the reflector body is then placed on the connection body as a reflector attachment.

Description

[0001] Description

[0002] Optoelectronic component with multi-part housing

[0003] The invention relates to an optoelectronic component according to the preamble of claim 1.

[0004] Such optoelectronic components are frequently implemented in premolded packages. The package is manufactured, as described, for example, in US 6,459,130, by overmolding a metallic conductor frame with a plastic, onto which an optoelectronic semiconductor chip is subsequently mounted. This plastic is coated with a reflectivity-enhancing material with respect to radiation emitted by the semiconductor chip. Due to the relatively low thermal conductivity of the plastic, most of the heat generated at the semiconductor chip during operation is conducted out of the package via the conductor frame. This can increase the risk of delamination of the package material from the conductor frame and, consequently, the exposure of the semiconductor chip to damaging external influences.Furthermore, the reflectivity of the plastic can be reduced by radiation incident on the plastic, such as ultraviolet radiation, due to discoloration, which can reduce the efficiency of the component.

[0005] Furthermore, housing bodies made of ceramic materials are known, which are often characterized by high thermal conductivity. In conventional optoelectronic components of this type, the wall of the housing body is metallized in such a way that the metallization forms a reflector. Furthermore, the The connecting conductors for contacting the semiconductor chip, as in JP 09-045965, are often also formed from this metallization. The metal serves as both the connecting conductor material and the reflector material.

[0006] One object of the invention is to provide an optoelectronic component of the type mentioned above, which is characterized by advantageously high efficiency.

[0007] This problem is solved by an optoelectronic component with the features of claim 1. Advantageous further developments are the subject of the dependent claims.

[0008] An optoelectronic component according to the invention comprises a housing body and at least one semiconductor chip arranged on the housing body. The housing body has a base part comprising a terminal body on which a terminal conductor material is arranged, and a reflector part comprising a reflector body on which a reflector material is arranged. The terminal body and the reflector body are preformed separately from one another, and the reflector body is arranged on the terminal body in the form of a reflector attachment. The reflector body can, in particular, be coated with the reflector material.

[0009] Because the housing body comprises a connection body and a reflector body that are pre-formed separately, the design of such a housing body advantageously offers a high degree of freedom, particularly with regard to the shapes of the connection and reflector bodies. For example, a Standard connector bodies can be pre-formed and fitted with variously designed reflector attachments. The same applies to differently designed connector bodies, resulting in a high degree of freedom in the design of the housing body, which comprises a pre-formed connector body and a pre-formed reflector body. Such housing bodies can be manufactured cost-effectively in a wide variety of configurations. Furthermore, the reflector body can be tailored to individual requirements concerning the radiation or reception characteristics of the optoelectronic component.

[0010] The optoelectronic component can be configured as a transmitter or receiver. The component preferably comprises at least one optoelectronic semiconductor chip, which can be implemented, for example, as an LED chip, laser diode chip, or photodiode chip. The optoelectronic component can also contain other semiconductor chips, such as an integrated circuit (IC) chip, which can, for example, be used to control the optoelectronic component.

[0011] For radiation generation or reception, the optoelectronic semiconductor chip preferably comprises an active zone, which can be configured, for example, for electromagnetic radiation, such as in the ultraviolet to infrared spectral range. The active zone and / or the semiconductor chip preferably contain a III-V semiconductor material, such as [Insert example here]. x Ga y Ali- κ - y P, In x Ga y Ali- x - yN or In x Ga y Ali- x . y As, each with O≤x≤l, O≤y≤l and x+y≤l. The material system In x Ga y Ali- x . y N, for example, is particularly suitable for radiation in the ultraviolet to green spectral range, while Inj.GayAli. x - y P is particularly suitable, for example, for radiation in the green-yellow to infrared spectral range.

[0012] Si-containing or Si-based semiconductor chips, such as Si photodiode chips, are also suitable as radiation receivers.

[0013] Preferably, during the pre-forming of the connection or reflector body, the connection conductor and / or the reflector material is arranged on the connection or reflector body, so that the base part and the reflector part of the housing body are also pre-formed separately from each other.

[0014] Due to the separate pre-forming of the base part and the reflector part, the reflector and connecting conductor material can, in principle, be freely selected independently of each other according to their respective advantageous properties – for example, with regard to reflectivity or conductivity – within the manufacturing possibilities.

[0015] The pre-formed reflector part is preferably permanently mechanically joined to the pre-formed base part, so that the housing body has an advantageously high stability and thereby protects the semiconductor chip from harmful external influences.

[0016] Particularly preferred is the arrangement in the housing body between the base part and the reflector part, which are especially separate. The two parts are pre-formed from each other, forming a connection area by means of which the reflector part and the base part are mechanically and stably connected.

[0017] The reflector part and the base part can be joined, for example, by an adhesive or a sintered connection, which is preferably used in

[0018] The connection area is formed. The sintering process preferably takes place after the separate pre-forming of the reflector and the housing part.

[0019] In a first preferred embodiment of the invention, the connecting conductor material is arranged in at least two electrically isolated sub-areas on the connecting body, which preferably at least partially form the connecting conductors for electrically contacting the semiconductor chip, which for this purpose is connected to the

[0020] The connecting conductor material is conductively connected. For example, the semiconductor chip is electrically connected to a section of the connecting conductor material via a solder or adhesive bond and to another section via a bond connection, such as a bond wire.

[0021] The connecting conductor and / or reflector material preferably contains a metal, particularly preferably Ag, Al, Pt, Pd, W, Ni, Au, or an alloy with at least one of these metals. These metals may be characterized by advantageously high conductivity. Depending on the wavelength of the generated or received radiation, these materials may also be characterized by advantageously high reflectivity with respect to this radiation. Au, for example, is characterized by high reflectivity from the infrared to the yellow-green spectral range, while For example, Ag and AI can also exhibit high reflectivity in the green, blue and ultraviolet spectral ranges.

[0022] In an advantageous embodiment, the connecting conductor material contains gold (Au) and / or is essentially free of silver (Ag), since silver atoms can impair the function of the semiconductor chip by migrating into it. Gold exhibits advantageous soldering properties, so that preferably at least the surface of the connecting conductor material facing the semiconductor chip contains gold in the case of a solder joint.

[0023] Since Ag is often characterized by a beneficially high reflectivity, especially in the ultraviolet to infrared range

[0024] The reflector material preferably contains Ag in the spectral range, with respect to radiation to be generated or received by an optoelectronic semiconductor chip. This is particularly true for the reflectivity of Ag compared to that of Au in the blue or ultraviolet spectral range, since Au absorbs relatively strongly in this spectral range.

[0025] By using different materials for the connection and reflector materials, the advantageous properties of each material – for example, high reflectivity and high conductivity – can be exploited, while the risk of negatively influencing the function or efficiency of the component due to these materials, such as damage to the semiconductor chip or comparatively low reflectivity, can be reduced. The reflector material can advantageously protect the reflector body from the incidence of UV radiation.

[0026] Aging effects of the housing body, such as cracking, changes in the surface or surface structure, or discoloration, can thus be reduced, especially compared to a conventional premolded housing design without metallic reflector material.

[0027] In a preferred embodiment of the housing body, it contains at least one ceramic, particularly preferably a ceramic containing aluminum nitride or aluminum oxide, which can be characterized by advantageously high thermal conductivity or an advantageously low thermal resistance. The thermal resistance of a housing body containing one of the aforementioned ceramics can, for example, be 10 K / W or less. An optoelectronic component whose housing body contains a ceramic, for example based on AlN or Al2O3, can exhibit advantageously increased stability against high temperatures or temperature fluctuations, particularly compared to a premolded housing design.

[0028] Compared to conventional pre-olded package designs with overmolded conductor frames, where the conductor frame takes over a large part of the heat dissipation, the heat generated at the semiconductor chip can be transported away more effectively via the package body due to the advantageously high thermal conductivity of the ceramic.

[0029] In the area of ​​semiconductor chips, for example, during the operation of a semiconductor chip designed as a high-performance chip or when attaching the semiconductor chip to the housing body, Considerable heat can be generated via a soldered connection. With conventional premolded package designs, this heat can increase the risk of delamination of the package material from the conductor frame, which in turn can negatively affect the component's function.

[0030] Preferably, at least the terminal body contains a ceramic that is thermally conductively connected to the semiconductor chip via the terminal conductor material, so that at least the part of the housing body on which the semiconductor chip is arranged has an advantageously high thermal conductivity and heat dissipation from the semiconductor chip can also advantageously take place via the terminal body.

[0031] The pre-forming of the connection and reflector bodies, or of the base and reflector parts, which contain a ceramic, is preferably carried out using a ceramic in the form of a viscous paste, a so-called green sheet. This green sheet is advantageously dimensionally stable with respect to the structures provided within it, which particularly favorably correspond to those of the housing body elements, such as the connection or reflector bodies. Structures for the various housing body parts can be formed in a green sheet, for example, by stamping.

[0032] In a further advantageous embodiment, the housing body includes a heat sink, which is preferably at least partially surrounded or formed by the connection body. Advantageously, the heat sink can be provided during the pre-forming of the base part comprising the connection body. The heat sink is further preferably separated from the semiconductor chip. or electrically insulated from the connecting conductor material.

[0033] Thermally, the heat sink is preferably well-conducted and connected to the semiconductor chip. This advantageously improves heat dissipation from the semiconductor chip. Furthermore, a heat sink that is at least partially formed or surrounded by the connection body offers an advantageous path for heat transfer from the semiconductor chip compared to transport via the connection conductors or the conductor frame of the semiconductor chip. . shortened.

[0034] In an advantageous embodiment of the invention, the heat sink can be thermally well connected to an external heat sink from the side of the terminal body opposite the semiconductor chip, thus reducing the risk of damage to the semiconductor chip or the housing body due to high temperature fluctuations, such as when the semiconductor chip is attached to the base part via a soldered connection.

[0035] In a further preferred embodiment of the invention, the optoelectronic component has a thermal connection. During assembly of the component, the thermal connection can be thermally connected to an external heat sink. Preferably, the thermal connection comprises a metal. The thermal connection can be arranged on the housing body. Preferably, the thermal connection is arranged on a side of the housing body, particularly the connection body, opposite the semiconductor chip. The thermal connection is preferably made of the The connecting conductor material is formed. The thermal connection can be formed during the pre-shaping of the base part.

[0036] The heat dissipation from the semiconductor chip to the thermal interface can essentially occur entirely through the material of the housing body, particularly the interface body. In particular, the housing body can be designed as a simplified heat sink. The need for a separate heat sink, especially within the interface body, can be advantageously omitted. Instead, the thermal interface can be located on the surface of the housing body. Furthermore, the thermal interface can be located, in particular entirely, outside the housing body, especially the interface body. Preferably, the thermal interface is located on the interface body.

[0037] Preferably, the housing body, in particular the connection body, contains a ceramic material, especially preferably one with high thermal conductivity, in the case of a separately formed thermal connection.

[0038] Furthermore, the thermal connection can be electrically connected to, in particular, one of the electrical conductors formed by the connection conductor material. This facilitates a large-area thermal connection, whereby the housing body, especially the connection body, advantageously does not need to be enlarged to create a large-area thermal connection. The thermal connection is expediently arranged in such a way that a direct electrically conductive connection between two conductors and a resulting short circuit are avoided. In particular, the thermal connection can be formed in one piece with, in particular, a connecting conductor.

[0039] According to a further preferred embodiment of the invention, the housing body has at least one recess in which the semiconductor chip is arranged. The recess is preferably provided at least partially in the form of a cutout in the reflector body and / or the reflector material is preferably arranged at least partially on the wall of the recess.

[0040] The wall of the recess or cavity is preferably provided with a continuous layer of the reflector material, which advantageously increases the reflectivity compared to an uncoated wall.

[0041] The shape of the recess or cavity, which can determine the shape of the reflector of the optoelectronic component, can advantageously influence the transmission and / or reception characteristics of the optoelectronic component. The reflector or the wall of the cavity can be formed in a wide variety of shapes. For example, the cavity can have the shape of a paraboloid, a sphere, a cone, a hyperboloid, an ellipsoid, or a segment made of at least one of these shapes.

[0042] The recess of the reflector body is particularly preferably designed to correspond to the recess of the housing body and thus to the shape of the reflector, so that the reflector part can be easily placed onto the base part after pre-forming. Further processing steps to form the suitable shape of the Recesses in the housing body can thus be advantageously avoided.

[0043] Preferably, the reflector material is electrically insulated from the connecting conductor material. This advantageously reduces the risk of a short circuit between the connecting conductors and the reflector material.

[0044] The electrical insulation of the reflector material from the connecting conductor material can be achieved, for example, by an insulating element that the housing body comprises according to a further preferred embodiment. Particularly preferably, this insulating element is arranged between the base and the reflector part such that the reflector material of the reflector part does not come into conductive contact with the connecting conductor material of the base part.

[0045] The insulating part is preferably pre-formed separately from the base part and the reflector part and particularly preferably also contains a ceramic.

[0046] The insulating part may also have a recess that can be designed to correspond to the recess in the housing body.

[0047] According to a further preferred embodiment of the housing body, an adhesive mediation part is arranged on the base part, which is preferably located downstream of the reflector part when viewed from the semiconductor chip.

[0048] The locking mechanism part preferably has a recess which can be designed to correspond to the recess of the housing body. The adhesive element is preferably designed or shaped such that a covering or the covering material, which may be arranged in the recess to protect the semiconductor chip from harmful external influences, adheres better to the adhesive element than to the reflector material. This at least reduces the risk of delamination of the covering.

[0049] Preferably, the adhesion promoter also contains a ceramic and / or the coating material contains a reactive resin, such as an acrylic, epoxy, or silicone resin, a mixture of these resins, and / or a silicone.

[0050] Silicone, for example, can be characterized by advantageously high resistance to ultraviolet radiation and high temperatures, such as temperatures up to 200°C. The aging process to which the coating is subjected when exposed to radiation or temperature fluctuations can thus be advantageously slowed down, consequently increasing the efficiency and / or lifespan of the component.

[0051] The various housing body parts, especially those pre-formed separately from one another, such as the

[0052] The adhesion mediator part, the insulation part, the reflector part or reflector body and the base part or connection body can each be permanently and mechanically stably joined together in a corresponding connection area of ​​the type mentioned above, which is formed, for example, by means of sintered connections. Further features, advantages and expediencies of the invention will become apparent from the following description of the exemplary embodiments in conjunction with the figures.

[0053] They show:

[0054] Figure 1 shows a first embodiment of an optoelectronic component according to the invention, illustrated by a schematic top view in Figure 1A, a schematic sectional view in Figure 1B, a top view of a base part in Figure IC, a bottom view of a base part in Figure 1D, and a top view of a reflector part in Figure 1E.

[0055] Figure 2 shows a second embodiment of an optoelectronic component according to the invention by means of a schematic sectional view and

[0056] Figure 3 shows a third embodiment of an optoelectronic component according to the invention, illustrated by a schematic sectional view in Figure 3A and a schematic top view of the base from below in Figure 3B.

[0057] Similar or similarly functioning elements are marked with corresponding reference symbols in the figures.

[0058] Figure 1 shows a first embodiment of an optoelectronic component according to the invention, based on various views and views of parts of a housing body of the optoelectronic component, based on Figures 1A, 1B, IC, 1D and 1E. Figure 1A shows a schematic top view of an optoelectronic component 1 according to the invention. The housing body 2 of the optoelectronic component has a recess 3 with a bottom 4 and a wall 5. Two electrically separated or insulated connection conductor areas 6 and 7 are formed on the bottom of the recess.

[0059] Preferably, the connection conductor areas consist essentially of Au. An optoelectronic semiconductor chip 8 is arranged on the connection conductor area 7 and preferably electrically conductive with the

[0060] The connection conductor area 7 is connected. The conductive connection can be made, for example, via a solder joint or an electrically conductive adhesive. However, a solder joint is preferred due to its generally higher thermal and electrical load-bearing capacity. The optoelectronic semiconductor chip 8 is electrically connected to the second connection conductor area 6 via a bond wire 12.

[0061] Especially for the formation of a solder or bond connection of the semiconductor chip with the

[0062] Au is well-suited for connection conductor areas due to its advantageous material properties, which is why the connection conductor areas preferably consist mainly of Au, at least on the surface facing the semiconductor chip. Towards the terminal body, the connection conductor areas can also contain other metals or metal layers, for example Ni followed by W, with the Ni-containing layer preferably being located between the W-containing layer and the semiconductor chip. The formation of the connecting conductor areas via chemical and / or galvanic processes can thus be advantageously facilitated, whereby the W-containing layer, which

[0063] The connection conductor structure is determined and this structure is reinforced by the Ni-containing layer, after which Au can be applied. Instead of Au, a NiPd alloy can also be used, which has similarly advantageous properties to Au with regard to the formation of a solder or bond connection.

[0064] The connecting conductor areas 6 and 7 are electrically separated or isolated from each other by an insulating gap 11 in the connecting conductor material.

[0065] The semiconductor chip can be designed as a radiation-emitting or radiation-receiving semiconductor chip, such as an LED chip or a photodiode chip, and is based, for example, on the material systems In x Ga y Al - x - y P or In x Ga y Ali. x _ yN, which are suitable for ultraviolet to green radiation or for yellow-green to infrared radiation. The semiconductor chip can also be designed as a silicon-based photodiode chip.

[0066] The wall 5 of the recess is provided with a reflector material, for example, containing mainly silver (Ag). The wall 5, together with the reflector material arranged on it, forms a reflector 9 for the radiation to be received or generated by the optoelectronic semiconductor chip. Silver is characterized by an advantageously high reflectivity over a wide wavelength range, particularly in the blue and ultraviolet wavelength ranges. The reflector material is preferably different from the connecting conductor material. In this embodiment, the connecting conductor material essentially contains Au and the reflector material Ag. A detrimental migration of Ag atoms from the

[0067] This avoids the presence of connecting conductor material in the semiconductor chip, which could lead to damage to the semiconductor chip, as well as the relatively low reflectivity in the ultraviolet or blue spectral range that is typical when using gold as a reflector material. The high reflectivity of silver in the ultraviolet spectral range also means that the housing material, which, for example, consists primarily of ceramic, can be effectively protected from UV radiation, at least in the area of ​​the reflector material. This reduces the risk of harmful aging of the housing.

[0068] A casing 10 is arranged in the recess 3 of the housing body 2, which advantageously protects the optoelectronic semiconductor chip from harmful external influences, such as moisture. The casing 10 contains, for example, silicone, which is characterized by high temperature resistance and resistance to adverse discoloration caused by, for example, UV radiation.

[0069] The encapsulation preferably reshapes the semiconductor chip, at least partially, to further improve its protection. This can advantageously increase the efficiency of the optoelectronic component. It should be noted that the recess, when viewed from above, can also have a shape that deviates from the essentially circular form shown. The shape of the recess, and in particular of the reflector, which determines the emission or reception characteristics of the optoelectronic component, can be designed in various forms suitable for diverse applications.

[0070] Figure 1B schematically shows a sectional view along line AA through the optoelectronic component according to Figure 1A.

[0071] In this sectional view, the multi-layered or multi-part structure of the housing body 2 from Figure 1A is clearly visible. A reflector part 14 is arranged downstream of the base part 13 of the housing body 2 via an insulating part 15. The parts of the housing body are preferably pre-formed separately from one another. At least the reflector part and the base part are at least partially pre-formed separately from one another.

[0072] The basic part comprises a terminal body 16, which preferably contains a ceramic. The terminal conductor areas 6 and 7 are arranged on the terminal body and are separated into two electrically isolated areas by the insulating gap 11. The terminal conductor areas extend laterally outwards from the semiconductor chip 8 to the side surfaces 17 and 18 of the housing body 2. In the area of ​​the side surfaces, the terminal conductor areas are conductively connected to terminals 19 and 20 on the surface 21 of the housing body facing away from the semiconductor chip. The terminals 20 and 19 can advantageously be connected in the same way as the Connection conductor areas 6 and 7 are formed during the pre-forming of the base part 13 of the housing body. For example, connections 19 and 20 also contain a metal, such as gold. Preferably, connections 19 and 20 and connection conductor areas 6 and 7 are made of essentially the same material or are formed in a corresponding manner. This advantageously simplifies the pre-forming of a base part with connections 19 and 20.

[0073] The optoelectronic component can be electrically connected to the conductive traces of a printed circuit board, for example, a metal-core PCB (e.g., a metal-core PCB). The optoelectronic component is preferably designed for surface mounting. Terminals 19 and 20, which essentially contain gold (Au), exhibit a lower oxidation tendency compared to terminals containing silver (Ag). Silver typically oxidizes faster than gold, which can have a detrimental effect, particularly during long storage periods, for example, on the solderability of agent-containing terminals.

[0074] The semiconductor chip can be arranged upside-up or upside-down on the terminal area 7. Upside-up means that a substrate or support is located between the active zone and the terminal area, while in an upside-down arrangement, the active zone of the semiconductor chip is located between the substrate and the terminal area. Since Au atoms typically exhibit significantly lower migration tendencies into the semiconductor chip compared to Ag atoms, the risk of damage to the semiconductor chip from migrating atoms is reduced. The use of materials with comparatively low migration tendencies, such as gold, is advantageously reduced. This is particularly beneficial in an upside-down arrangement without a protective substrate or carrier between the active zone and the conductor material.

[0075] Preferably, the ceramic material used in the terminal body is an aluminum nitride or aluminum oxide ceramic. Both ceramics are characterized by advantageously high thermal conductivities, with aluminum nitride typically exhibiting slightly higher thermal conductivity than aluminum oxide. However, aluminum nitride is usually more expensive to purchase than aluminum oxide.

[0076] The connecting body 16 preferably forms at least a portion of a heat sink 22. The heat sink preferably contains a metal, for example Au, Ag, Cu and / or W. Such metals are characterized by advantageously high thermal conductivity. W, for example, is also well matched to the aforementioned ceramics, especially AlN, with respect to thermal expansion, which further advantageously increases the stability of the housing body. The material of the heat sink can differ from the material of the connecting conductors and, according to its advantageous properties, can be selected essentially freely within the limits of manufacturing possibilities.

[0077] The already relatively high thermal conductivity of a connector body containing one of the aforementioned ceramics can be advantageously increased further by the heat sink. The heat sink is preferably located in the area of ​​the connector body that lies beneath the semiconductor chip. This allows for the heat sink to be dissipated during the mounting of the Semiconductor chips 8 are connected to the terminal conductor area 7 via a solder joint, during the manufacturing of which high temperatures are usually present, thus advantageously improving heat dissipation from this area. This reduces the risk of delamination of the insulating body and / or the terminals due to temperature fluctuations or high temperatures.

[0078] The heat sink continues to be preferentially located by

[0079] The connecting conductor material in the form of connecting conductor areas 6 and 7 is electrically insulated. This can be achieved, for example, via a section of the connecting body material located between the connecting conductor material and the heat sink. The electrical insulation advantageously prevents a short circuit between the electrically separated connecting conductor areas and simultaneously allows for a large-area heat sink. The heat sink is also advantageously formed during the pre-shaping of the base part or the connecting body.

[0080] Preferably, the heat sink is designed such that it protrudes from the terminal body 16 on the surface 21 of the base part to an extent corresponding to the terminals 19 and 20. When the optoelectronic component is mounted on a printed circuit board, this facilitates the thermally conductive connection of this heat sink 22 to an external heat sink, such as the metal core of a metal-core PCB. Furthermore, this design of the heat sink can have a mechanically stabilizing effect on the mounting of the optoelectronic component on a printed circuit board. Such a pre-formed base part 13 with connection conductor areas 6, 7, connections 19, 20, and a heat sink 22, whose connection body 16 has a ceramic with high thermal conductivity, can be of considerable advantage for an optoelectronic component. The area available for heat dissipation from the semiconductor chip 8 is greatly increased by the ceramic and the heat sink compared to a conventional pre-molded package design. In particular, the heat sink shortens the transport path of the heat generated at the semiconductor chip, for example, during the soldering process of the semiconductor chip to the connection conductor area or during operation of the component, to the heat sink.

[0081] In the illustration of the embodiment in Figure 1B, the base part 13 defines the bottom 4 of the recess 3 of the housing body 2.

[0082] Contrary to the illustration in Figure 1B, the heat sink can also be omitted, in particular if the connecting body essentially contains a ceramic, such as AlN, which has a particularly advantageously high

[0083] exhibits thermal conductivity. Preferably, in this case, a thermal connection, for example containing a metal such as one of the metals mentioned above, is provided on the surface of the housing body in the area of ​​the heat sink shown in Figure 1B for connection to an external heat sink, which is particularly preferably electrically insulated from the connections 19 and 20.

[0084] Figure IC shows a top view of an embodiment of a preformed base part corresponding to Figure 1A or 1B. The following are shown: Connection conductor areas 6 and 7, which are electrically separated by the insulating gap 11, are shown. The semiconductor chip is only placed on connection conductor area 7 after the separately pre-formed housing parts have been joined.

[0085] Figure 1D shows a top view from below of an embodiment of a base part 13, as illustrated, for example, in the view shown in Figure 1A or 1B. The terminals 19 and 20, which serve for the electrical contacting of the semiconductor chip from the surface 21 of the base part 13, are visible. The heat sink 22, at least partially formed by the terminal body 16, is also shown.

[0086] It should be noted that the connections, particularly regarding their number and specific design, are shown in Figure 1D only as examples of four essentially rectangular connections – two for each connection of the semiconductor chip. Similarly, the heat sink is shown only as an example, depicted as circular in plan view. This is, of course, not to be understood as a limitation to such a design. Advantageously, the heat sink is isolated from the connections, particularly by means of an arrangement spaced laterally from the connections, thus reducing the risk of a short circuit between the connections via the heat sink.

[0087] In this embodiment, the reflector part 14 is preformed separately from the base part 13 and preferably contains a ceramic, for example aluminum nitride or aluminum oxide. A top view of a preformed reflector part is shown in Figure 1E. The reflector part 14 comprises a reflector body 23 with a recess 30. is provided with a feature that extends through the entire reflector body 23. The recess 30 is part of the recess 3 of the finished housing body 2. The recess 30 has a wall

[0088] 5, which is preferably provided with a reflector material, for example containing Ag, during preforming. The shape of the wall or the shape of the recess determines the shape of the reflector 9, which is formed by the wall 5 of the recess and the reflector material arranged on the wall. The wall 5 of the recess 30 is preferably covered at least approximately completely with the reflector material, so that the reflector area for radiation to be generated or received by the semiconductor chip is as large as possible.

[0089] As shown in Figure 1B, the reflector part 14 is located downstream of the base part in the housing body 2. To prevent a short circuit of the connecting conductor areas 6 and 7 via the reflector material, the reflector 9, or rather the reflector material, is electrically insulated from the connecting conductor areas by an insulating part 15.

[0090] 6 and 7 are insulated. The insulating element preferably contains a ceramic, for example, also aluminum nitride or aluminum oxide, which can be advantageous when joining the individually preformed parts of the housing body. Regarding the shape of the insulating element, care is preferably taken to ensure that it aligns as closely as possible with the boundary of the recess in the reflector element as defined by the base element. At a minimum, the insulating element is preferably not positioned closer to the semiconductor chip in the lateral direction than the reflector element. This advantageously prevents the reflective area from being reduced, as the connecting conductor material, which is, for example, Au, also... which, depending on the wavelength of the incident radiation, can exhibit relatively high reflectivities.

[0091] The encapsulation 10, as shown in Figure 1B, at least partially encloses the semiconductor chip 8 and protects it from harmful external influences. Furthermore, the encapsulation is arranged on the reflector material in the area of ​​the recess of the reflector body 23 and, on the side of the base part 13, at least partially on the connecting conductor material. As mentioned above, these materials may contain metals to which the encapsulation material, which may contain silicone, for example, often adheres only relatively poorly.

[0092] Figure 2 schematically illustrates a second embodiment of an optoelectronic component according to the invention in a sectional view. The illustrated embodiment essentially corresponds to the embodiment shown in Figure 1. In contrast to the latter, an adhesion-promoting element 24 is arranged on the reflector part 14, viewed from the semiconductor chip 8, which is arranged on the base part 13. The adhesion-promoting element 24 is preferably designed or shaped such that it improves the adhesion of the covering 10 in the recess 3 of the housing body 2. The adhesion-promoting element preferably contains a ceramic, for example, also aluminum nitride or aluminum oxide.Silicone, which the encapsulation material contains, for example, usually adheres better to such a ceramic material than to a metal, such as the reflector material located on wall 5 of the recess in the housing body, or the connecting conductor material located on the base part. The risk of damaging external influences on the semiconductor chip is advantageously reduced by the improved adhesion of the encapsulation in the recess. The adhesion-promoting area can be advantageously increased by a step between the reflector part and the adhesion-promoting part. For this purpose, the reflector part is preferably essentially free of the reflector material on its surface opposite the bottom 4 of the recess 3.

[0093] Figure 3 shows a third embodiment of an optoelectronic component according to the invention, based on a schematic sectional view in Figure 3A and a schematic top view from below of the base part in Figure 3B.

[0094] The embodiment shown in Figure 3 essentially corresponds to that in Figure 2. In contrast, the optoelectronic component according to Figure 3 does not have an additional heat sink. The semiconductor chip 8 can be thermally connected via the thermal connection 25 located on the surface 21 of the housing body 2 opposite the semiconductor chip. The semiconductor chip can be thermally connected to an external heat sink via the thermal connection 25.

[0095] Heat dissipation from the semiconductor chip occurs primarily through the material of the connection body 16, which for this purpose advantageously contains a ceramic with high thermal conductivity. Preferably, the housing parts of the housing body 2, such as the

[0096] The adhesive element 24, the reflector element 14 or the reflector body 23, the insulating element 15 and / or the base element 13 or the connection body 16 are made of a ceramic. Due to its particularly high thermal conductivity, an aluminum nitride ceramic is especially suitable. Preferably, the thermal connection 25 and the connection 19 and / or the connection 20 are made of the same material(s). This simplifies the process of forming the thermal connection during the pre-shaping of the base part, together with the connection conductor areas 6 and 7 and / or the connections 19 and 20.

[0097] The thermal connection 25 can be electrically isolated from the connections 19 and 20, which are arranged on the surface 21 of the housing body. This is indicated in the top view of the surface 21 of the housing body in Figure 3B by the dashed line at reference numeral 25, which designates the thermal connection, represented by the broken circle, and which is electrically isolated from the connection 20 and the dashed connection 19.

[0098] Alternatively, the thermal connection 25 can be electrically connected to one of the two terminal conductors. This is indicated in Figure 3A by the dashed line between the thermal connection 25 and the terminal 19. The dashed line 26 in Figure 3B denotes a thermal connection 25 that is integrally formed with the terminal 19, is therefore conductively connected to the terminal 19, and is electrically isolated from the terminal 20. This prevents a short circuit between the terminals 19 and 20 via the thermal connection. The solid line at reference numeral 25 denotes such a thermal connection. This facilitates a large-area thermal connection of the semiconductor chip from the surface 21 without increasing the size of the package. The various housing body parts of the housing body 2 of the optoelectronic component 1 are preferably connected by means of mechanically stable connection areas 27. A connection area of ​​this kind is particularly preferred between any two adjacent or adjoining housing body parts.

[0099] As a result, the housing body of the optoelectronic component exhibits a suitably high overall stability.

[0100] The connection areas can be formed in particular by sintered connections, which can be formed when the individual housing body parts are sintered together in a suitable manner.

[0101] Such connection areas 27 can of course also be provided in the embodiments according to Figure 1 or 2.

[0102] The embodiments shown in Figures 1, 2, and 3 have in common that the reflector 9 has a substantially frustoconical shape in the sectional view. However, during the pre-forming of the reflector part 14, a wide variety of shapes for the wall 5 of the recess 3 or the opening 30 in the reflector body can be realized. Depending on the shape of the reflector, the optoelectronic component exhibits different reception or emission characteristics. If the reflector part is a body that has a focus or focal area, the semiconductor chip 8 is preferably arranged in this focus or focal area. For example, the recess can also be designed to have a substantially parabolic cross-section, contrary to the illustration. In the exemplary embodiments, the various housing parts, such as the base part, the insulation part, the reflector part, or the adhesion promoter part 24, are preferably preformed separately. After their preforming, the parts are arranged one above the other accordingly, so that, for example, the structure shown in Figure 1B, Figure 2, or Figure 3A in a sectional view is formed. After the preformed parts of the housing body 2 are arranged one above the other, this structure is mechanically bonded, for example, by means of a sintering process, such that a connection area, such as a mechanically stable sintered joint, is formed at the interfaces between the various housing parts. The various parts of the housing body are connected by means of the connection areas. 'The housing body is permanently and mechanically stable. Such a housing body exhibits advantageously high mechanical stability and, due to the separate pre-forming of the individual parts, can be designed in a variety of ways, with the heat dissipation properties of the housing body being advantageously high in the case of a ceramic material used for the individual parts.

[0103] Furthermore, in the exemplary embodiments, a phosphor can be incorporated into the casing. The phosphor is preferably designed to absorb radiation emitted by the semiconductor chip and convert it into radiation of a wavelength greater than that emitted by the semiconductor chip. The wavelengths can mix so that the optoelectronic component can emit mixed-color light, in particular white light. This patent application claims priority from German patent application 10 2004 014207.6 dated March 23, 2004, the entire disclosure content of which is hereby explicitly incorporated into the present patent application by reference.

[0104] The invention is not limited by the description of the invention by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if this combination is not explicitly stated in the patent claims.

Claims

Patent claims 1. Optoelectronic component (1) with a housing body (2) and at least one semiconductor chip (8) arranged on the housing body, wherein the housing body comprises a base part (13) comprising a terminal body (16) on which a terminal conductor material (6,7) is arranged, and a reflector part (14) comprising a reflector body (23) on which a reflector material (9) is arranged, characterized in that the terminal body and the reflector body are preformed separately from each other and the reflector body is arranged on the terminal body in the form of a reflector attachment.

2. Optoelectronic component according to claim 1, characterized in that the base part and the reflector part are preformed separately from each other.

3. Optoelectronic component according to claim 1 or 2, characterized in that the housing body contains a ceramic. '4. Optoelectronic component according to one of the preceding Claims, characterized in that the housing body contains aluminium nitride or aluminium oxide.

5. Optoelectronic component according to one of the preceding Claims, characterized in that the connecting conductor material is different from the reflector material.

6. Optoelectronic component according to one of the preceding claims, characterized in that the connecting conductor material contains a metal.

7. Optoelectronic component according to one of the preceding claims, characterized in that the reflector material contains a metal.

8. Optoelectronic component according to one of the preceding claims, characterized in that the connecting conductor material contains Au and the reflector material contains Ag.

9. Optoelectronic component according to one of the preceding claims, characterized in that the housing body has a recess (3) in which the is arranged on a semiconductor chip.

10. Optoelectronic component according to one of the preceding claims, characterized in that the reflector body has a recess (30), the recess is part of the recess of the housing body and the reflector material is arranged on a wall (5) of the recess.

11. Optoelectronic component according to one of the preceding claims, characterized in that the reflector material is electrically insulated from the connecting conductor material.

12. Optoelectronic component according to one of the preceding claims, wherein an insulating part (15) is arranged between the base part and the reflector part.

13. Optoelectronic component according to claim 12, characterized in that the insulating part is preformed separately from the base part and the reflector part.

14. Optoelectronic component according to one of the preceding claims, characterized in that an adhesion mediation part (24) is arranged on the base part, in particular following the reflector part, which has a recess that is part of the recess of the housing body.

15. Optoelectronic component according to claim 14, characterized in that a covering (10) is arranged in the recess of the housing body, which at least partially encloses the semiconductor chip.

16. Optoelectronic component according to one of the preceding claims, characterized in that the covering is arranged on the adhesion mediator part and the covering adheres better to the adhesion mediator part than to the reflector material.

17. Optoelectronic component according to one of the preceding claims, characterized in that the base part comprises a heat sink (22).

18. Optoelectronic component according to claim 17, characterized in that the heat sink is electrically isolated from the semiconductor chip.