Optoelectronic semiconductor component and method for producing said component

Abstract

In at least one embodiment of the optoelectronic semiconductor component (1), said component comprises a connection carrier (2) with a connection side (20) and at least one optoelectronic semiconductor chip (3) that is applied to the connection side and is electrically connected to the connection carrier. The semiconductor component comprises an adhesion enhancing intermediate film (5) that is applied to the connection side and at least partially covers the latter. In addition, the semiconductor component has at least one radiation-permeable potting body (4), which at least partially surrounds the semiconductor chip, the potting body being mechanically connected to the connection carrier by means of the intermediate film. An optoelectronic semiconductor component that is designed in this way is resistant to ageing and has good optical characteristics.

Description

[0001] Optoelectronic semiconductor component and method for manufacturing an optoelectronic semiconductor component

[0002] An optoelectronic semiconductor component is described. Furthermore, a method for manufacturing such an optoelectronic semiconductor component is described.

[0003] Optoelectronic components, such as light-emitting diodes (LEDs) or photodiodes, have found widespread technical applications. Several factors that have contributed to the proliferation of these components include their high efficiency and resistance to external stresses and environmental influences. For example, optoelectronic components can withstand moisture and heat well and, with a suitable design, are also resistant to mechanical stress. In addition to high efficiency, optoelectronic components also offer a long lifespan, a compact design, and diverse configuration options, and can be manufactured at comparatively low production costs. The housing of the optoelectronic component is often crucial for many of these properties and therefore typically requires special attention.

[0004] One task to be solved is to specify an age-resistant optoelectronic component. Another task to be solved is to specify a method for manufacturing such an optoelectronic component. According to at least one embodiment, the optoelectronic semiconductor component comprises a terminal carrier with a terminal side. The terminal carrier can be designed, for example, as a printed circuit board comprising etched, printed, or vapor-deposited conductive traces. The terminal carrier can be mechanically flexible, for example, as a flexible printed circuit board, particularly one based on polyimide, or it can be made of mechanically rigid materials such as ceramics or glasses. Preferably, the terminal carrier has high thermal conductivity, making it suitable for effectively dissipating the electrical power loss generated during the operation of the optoelectronic semiconductor component, which mainly results in heat generation.

[0005] Depending on the requirements, it can be advantageous for the connector to be transparent in a specific spectral range of the electromagnetic spectrum. The geometric dimensions of the connector can also be adapted to the specific requirements of a given application. The connection side of the connector can be flat or planar and suitable for accommodating at least one optoelectronic semiconductor chip. Typically, the connector has one connection side; however, it is possible for both sides of a connector with a planar design, for example, to serve as connection sides.

[0006] According to at least one embodiment of the optoelectronic

[0007] This semiconductor component comprises at least one optoelectronic semiconductor chip. The semiconductor chip is designed to emit electromagnetic radiation during operation. The semiconductor chip can be configured either to receive or to emit data. It can be designed as a photodiode, and thus as a sensor, or as a light-emitting element, such as a light-emitting diode or laser diode. The semiconductor chip can be planar and, for example, have a square or rectangular base. It is also possible for the semiconductor chip to have hexagonal or round bases, which, for example, allow for a high-density arrangement of the semiconductor chips on a substrate. There are no strict limits to the thickness of the semiconductor chip; however, the thickness is preferably less than 200 μm, and particularly less than 50 μm. The semiconductor chip can, for example, be designed as a thin-film chip, as described in publication WO 2005 / 081319 Al, the disclosure of which regarding the semiconductor chip and the manufacturing process described therein is hereby incorporated by reference.

[0008] The electrical contacts of the semiconductor chip can all be located on the top or bottom of the chip, on the sides of the semiconductor chip, or on both the top and bottom of the chip. In addition, the semiconductor chip has a radiation transmission surface through which the radiation from

[0009] Light emitted or received leaves or enters a semiconductor chip through this surface. The radiation transmission surface can be flat or have structures that facilitate the passage of incoming or outgoing light. According to at least one embodiment of the optoelectronic semiconductor component, it comprises an adhesion-promoting intermediate film. This intermediate film is applied to the terminal side of the terminal carrier and covers it at least partially. The intermediate film can be homogeneously formed from a single material or have a multilayer structure. In particular, it is possible for the adhesion-promoting intermediate film to have structures, for example in the form of recesses, or for electrically conductive structures to be applied to this intermediate film. Preferably, the thickness of the intermediate film is in the range of 20 μm to 200 μm, particularly between 35 μm and 60 μm.

[0010] According to at least one embodiment of the optoelectronic semiconductor component, it comprises at least one radiation-transparent encapsulating body. Radiation-transparent here means that the encapsulating body is essentially transparent or translucent in the electromagnetic spectral range relevant to the operation of the semiconductor chip. That is, the encapsulating body absorbs less than 20%, preferably less than 10%, and particularly preferably less than 5% of the radiation in the relevant spectral range.

[0011] According to at least one embodiment of the optoelectronic semiconductor component, the potting compound extends only over or along a single main face of the connector carrier. Equally preferred are end faces of the connector carrier that are free of the potting compound and / or the intermediate film. In other words, the potting compound does not surround the connector carrier on multiple sides. In at least one embodiment of the optoelectronic semiconductor component, it comprises a terminal carrier with a terminal side and at least one optoelectronic semiconductor chip mounted on the terminal side and electrically connected to the terminal carrier. The terminal side can have at least one terminal surface configured to be connected to the electrical contacts of the semiconductor chip. The terminal surface can, for example, be configured as a solder or adhesive pad. Furthermore, the

[0012] The semiconductor component includes an adhesion-promoting intermediate film applied to the connection side, at least partially covering it. Furthermore, the semiconductor component has at least one radiation-transparent encapsulating body that at least partially surrounds the semiconductor chip, the encapsulating body being mechanically connected to the connection carrier by means of the intermediate film.

[0013] The adhesion-promoting intermediate film is designed to adhere to the connection carrier or its connection side. Furthermore, the intermediate film should have an adhesive bond with the potting compound. For example, the adhesion between the intermediate film and the connection carrier may be stronger than the adhesion between the potting compound and the connection carrier. It is also possible that the adhesion between the potting compound and the intermediate film is superior to the adhesion between the potting compound and the connection carrier. Preferably, the adhesion between the potting compound and the connection carrier is stronger due to the

[0014] The use of the intermediate film is improved by at least a factor of 1.5, particularly preferably by at least a factor of 2. Such an intermediate film ensures a permanent, mechanically stable connection between the connector carrier and the potting compound. It is not necessary for the entire side of the potting compound facing the connector carrier to be in direct contact with the intermediate film. In particular, electrical connections can exist between the potting compound and the intermediate film. Alternatively, the mechanical connection between the potting compound and the connector carrier can be indirect, at least partially, so that, for example, the potting compound adheres to the intermediate film, which in turn adheres to a semiconductor chip, and the semiconductor chip is directly connected to the connector carrier. It is also possible that the semiconductor chip, through which the connection between

[0015] The intermediate film and the connection carrier are mediated, or indirectly connected to the connection carrier, for example via a rewiring layer, a heat sink, or a ceramic intermediate carrier. The encapsulating body surrounds the semiconductor chip, for example at its radiation transmission surface and at the chip flanks. Chip flanks are those side surfaces of the semiconductor chip that are oriented, for example, perpendicular to the connection side or a connection surface and connect the radiation transmission surface to the surface of the semiconductor chip facing the connection side.

[0016] An optoelectronic semiconductor component designed in this way is resistant to aging and exhibits good optical properties.

[0017] According to at least one embodiment of the optoelectronic semiconductor component, the radiation transmission area of ​​the Semiconductor chips are at least partially covered by the interlayer film. In particular, the entire

[0018] The radiation transmission surface is covered by the intermediate film. The intermediate film is preferably transparent to the electromagnetic radiation received or emitted by the semiconductor chip, at least in a sub-region of the relevant spectral range. Specifically, the intermediate film can be transparent in the relevant spectral range. Such an arrangement or design of the intermediate film allows for the simple fabrication of the optoelectronic semiconductor component.

[0019] According to at least one embodiment of the optoelectronic semiconductor component, the intermediate film is designed with a silicone film. That is, the intermediate film comprises a silicone film or consists entirely of a silicone film. Preferably, the intermediate film and the encapsulating body are made of the same material or of materials that allow good adhesion to one another. Since silicone is highly resistant to electromagnetic radiation, especially in the blue and near-ultraviolet spectral range, such an intermediate film can be used to create an age-resistant optoelectronic component.

[0020] According to at least one embodiment of the optoelectronic semiconductor component, the intermediate film is designed with, or consists of, a material that is opaque to radiation. In other words, the intermediate film is neither transparent nor translucent. Preferably, the intermediate film then has at the

[0021] The radiation transmission surface has at least one recess or at least one opening, so that the The radiation transmission surface is at least partially free of the intermediate film.

[0022] According to at least one embodiment of the optoelectronic semiconductor component, a cavity is formed between the interlayer, the connection side, and the chip flanks. In other words, the interlayer spans the semiconductor chip like a tent. The chip flanks can remain completely uncovered by the interlayer or be largely covered by it. If, in a subsequent step such as lithography or vapor deposition, electrical conductors are to be applied to the interlayer, it is advantageous if the resulting cavity has a relatively large volume so that the slope of the interlayer parallel to the orientation of the connection side does not become too steep. This prevents insufficient material from being deposited in excessively steep areas of the interlayer during a vapor deposition process.Photolithographic structuring is only possible in areas where the intermediate film is not oriented too steeply towards the connection side. "Not too steep" in this context means that the angle between the plane defined by the radiation transmission surface of the semiconductor chip and the surface facing away from the connection side must not exceed a certain angle.

[0023] The angle of the intermediate film is less than 45°, preferably less than 30°. If the radiation transmission surface has a structure, the plane is defined by spatially averaging over the structure of the radiation transmission surface in a direction perpendicular to the main propagation plane of the intermediate film. According to at least one embodiment of the optoelectronic semiconductor component, the encapsulating body is made of silicone. Silicone is particularly resistant to aging from electromagnetic radiation in the blue or UV spectral range. Preferably, the encapsulating body is made in one piece. It is also possible for the encapsulating body to have several layers or shell-like structures, which can also be made of different materials.

[0024] Alternatively, the potting compound can also be made of an epoxy resin or an epoxy-silicone hybrid material. The decisive factor for the choice of potting compound material is that the selected material is resistant to aging with respect to the radiation emitted or received by the semiconductor chip and is at least partially transparent in the spectral range relevant to the operation of the semiconductor chip. Furthermore, the potting compound material should preferably be able to withstand the temperatures occurring during the operation of the optoelectronic semiconductor component.

[0025] According to at least one embodiment of the optoelectronic semiconductor component, the encapsulating body and / or the intermediate film contain at least one admixture in the form of a diffuser, conversion agent, or filter medium. The encapsulating body and / or intermediate film can each contain several admixtures, and the encapsulating body and intermediate film can also contain admixtures of varying concentrations. If the semiconductor chip is designed as a photodiode, for example, the encapsulating body can also contain several filter media that only allow light in a certain spectral range to pass through to the semiconductor chip. A suitable conversion agent can be added as an admixture. For example, a blue-emitting LED can be used to utilize a semiconductor device as a white light source. By using diffusers such as TiO2 particles, for example in the intermediate film, it is possible to create a lighting device that emits light homogeneously across its entire radiating surface.

[0026] According to at least one embodiment of the optoelectronic semiconductor component, the connection carrier is made of a metal or metal alloy, a plastic, or a ceramic. The connection carrier can consist of a single material, for example, copper, or it can be a multilayer system that, for example, exhibits particularly good thermal conductivity. By selecting suitable ceramics, the connection carrier can be transparent or reflective in the relevant spectral range.

[0027] According to at least one embodiment of the optoelectronic semiconductor component, this component is, except for the connection carrier,

[0028] The intermediate film and potting compound are housing-free. The intermediate film and / or potting compound may contain impurities. Such a semiconductor component can be manufactured to be particularly compact, comprises few components, and is therefore also cost-effective.

[0029] According to at least one embodiment of the optoelectronic semiconductor component, the radiation transmission surface of the semiconductor chip faces away from the connector carrier. Furthermore, the encapsulating body covers the entire semiconductor chip in a direction perpendicular to the radiation transmission surface. According to at least one embodiment of the optoelectronic semiconductor component, the potting compound is designed as an optical element. For example, the potting compound forms a lens.

[0030] According to at least one embodiment of the optoelectronic semiconductor component, a further cavity is enclosed by the intermediate film, the connector carrier, and the electrical conductors. Alternatively, the further cavity is enclosed by the semiconductor chip, the connector carrier, and the electrical conductors; in this case, the further cavity preferably has no contact with the intermediate film. An insulator, located, for example, between the connector carrier and the electrical conductors, can also border the further cavity. The further cavity is, for example, filled with a gas or evacuated. However, the further cavity is free of any liquid or solid.

[0031] Furthermore, a method for manufacturing an optoelectronic semiconductor component is described. For example, an optoelectronic semiconductor component can be manufactured using this method, as described in conjunction with one or more of the embodiments mentioned above.

[0032] According to at least one embodiment, the method comprises at least the following process steps:

[0033] - Providing a connector carrier with one connection side, - Providing at least one semiconductor chip,

[0034] - Attaching the semiconductor chip to the connector side,

[0035] - Applying an intermediate film to the connection side, and

[0036] - Creating a casting body. The provision of at least one semiconductor chip can also be achieved by growing the semiconductor chip on a suitable substrate, for example, epitaxially. In this case, the substrate side preferably represents a suitable growth surface, such as a semiconductor material. The process step of depositing the semiconductor chip is, in this case, included in the process step of preparation. The process can take place, at least partially, within the wafer assembly.

[0037] Such a process makes it possible to efficiently manufacture age-stable optoelectronic components.

[0038] According to at least one embodiment of the method, the intermediate film is applied across the entire surface of the connection side and the at least one semiconductor chip. The film thus completely covers the connection side and the semiconductor chips located thereon. Such a

[0039] Applying the intermediate film is easy to implement and reduces manufacturing costs.

[0040] According to at least one embodiment of the method, the application of the intermediate film comprises the following steps:

[0041] - Laminating a partially cross-linked intermediate film, and

[0042] - Curing of the laminated intermediate film.

[0043] The partially cross-linked intermediate film can be, for example, a silicone film that is applied to the connection side of the connector carrier while still soft, ductile, or viscous. This allows the partially cross-linked intermediate film to conform well to the surface structure. The substrate is adapted to the substrate, both microscopically and macroscopically. In a subsequent process step, the laminated intermediate film is fully cross-linked or cured. This can be achieved, for example, by temperature-induced curing or by UV radiation. The volume shrinkage of the intermediate film due to curing is preferably less than 10%, particularly preferably less than 3%. This two-stage application of the intermediate film offers the advantage of achieving particularly good adhesion of the intermediate film to the substrate.

[0044] According to at least one embodiment of the process, the casting body is produced by compression molding, with the connecting carrier or its connection side forming part of the mold. Compression molding typically uses a casting film onto which the mold is subsequently pressed. The casting film seals the mold. Depending on the design of the intermediate film, the casting film may be omitted, as sufficient sealing between the mold and the connecting carrier can be achieved via the intermediate film. In other words, the intermediate film, in addition to its function as an adhesion promoter, can also serve as a casting film for the compression molding process. Compression molding simplifies the manufacturing process and reduces production costs.

[0045] According to at least one embodiment of the method, recesses are created in the intermediate film by means of laser ablation. For laser ablation, the intermediate film is preferably designed to be absorbent in a specific spectral range.

[0046] For example, the intermediate film can be absorbing below approximately 400 nm, so that, for example, laser radiation in the UV spectral range is absorbed by the film and this which can therefore be ablated. A short-pulse laser with pulse durations in the nanosecond or femtosecond range is preferably used for laser ablation. Frequency-tripled solid-state lasers are particularly suitable. The laser radiation can be directed onto the

[0047] The intermediate film is focused. Depending on the requirements, the focus diameter can be adjusted using suitable optics, automatically resulting in a specific feature size. For example, if the focus diameter is 20 μm, cutouts with a diameter of 20 μm can be easily created. Alternatively, the intermediate film can be scanned using laser radiation, allowing for the production of larger, continuous patterns. In addition to short-pulse lasers, it is also possible, particularly for scanning, to use focused continuous-wave lasers with suitable wavelengths. Laser ablation allows for the creation of highly precise cutouts in the intermediate film, especially with minimal impact on the underlying structures or layers.

[0048] Necessary recesses, for example for the electrical contacts of semiconductor chips, can be created not only by laser ablation but also by lithographic or etching processes. Mechanical methods, such as precision milling, are also conceivable.

[0049] The order in which the individual process steps are listed does not necessarily have to correspond to the order in which the process steps are carried out. However, the given order is considered preferred. Some application areas where the optoelectronic components described here could be used include the backlighting of displays or

[0050] Display devices. Furthermore, the optoelectronic components described here can also be used, for example, in

[0051] Lighting devices are used for projection purposes, in spotlights or floodlights, or for general lighting.

[0052] The following section provides a more detailed explanation of a component and a method described herein, with reference to the drawing and illustrated by exemplary embodiments. Identical reference numerals indicate identical elements in the individual figures. However, these references are not to scale; rather, individual elements may be exaggerated for clarity.

[0053] They show:

[0054] Figure 1 shows a schematic sectional view of an exemplary embodiment.

[0055] Figure 2 shows a schematic sectional view of another embodiment,

[0056] Figure 3 shows a schematic sectional view of an embodiment with a Fresnel lens.

[0057] Figure 4 shows a schematic sectional view of another embodiment , Figure 5 is a schematic sectional view of a

[0058] Exemplary implementation with multiple semiconductor chips,

[0059] Figure 6 shows a schematic sectional view of an embodiment with a thin-film chip, and

[0060] Figures 7a-f show schematic sectional views of various process steps in the manufacture of an exemplary embodiment.

[0061] Figure 1 shows an embodiment of an optoelectronic semiconductor component 1. Electrical conductors 8 are attached to a flat terminal side 20 of a terminal carrier 2, which is made of a ceramic material with high thermal conductivity. An optoelectronic semiconductor chip 3 is attached to the side of the electrical conductors 8 facing away from the terminal carrier 2. The electrical connection between the semiconductor chip 3 and the electrical conductors 8 is made, for example, by means of electrically conductive adhesive.

[0062] The side of the semiconductor chip 3 facing away from the connector 2 forms its radiation transmittance surface 30. The chip flanks 6 are formed by the boundary surfaces of the semiconductor chip 3, which are oriented perpendicular to the radiation transmittance surface 30 and connect the radiation transmittance surface 30 to the side of the semiconductor chip 3 facing the connector 2. An intermediate film 5 is applied over the connector side 20. The intermediate film 5 covers electrical conductors 8 and the semiconductor chip 3. The entire radiation transmittance surface 30 of the semiconductor chip 3 is also covered by the intermediate film 5. covered. The intermediate film 5 is a silicone film. The semiconductor chip 3, designed as a flip chip, has a thickness of approximately 150 μm in the direction perpendicular to the connection side 20. The thickness of the silicone film 5 is approximately 50 μm.

[0063] A cavity 11 is formed at the chip flanks 6, enclosed by the intermediate film 5 and the connection side 20. As shown in Figure 1, the cavity 11 has a comparatively small volume. The silicone film 5 partially abuts the chip flanks 6. A potting compound 4 is applied to the side of the intermediate film 5 facing away from the connection carrier 2. The potting compound surrounds the semiconductor chip 3 essentially at its radiation transmission surface 30 and at the chip flanks 6. The mechanical connection between the potting compound 4 and the connection carrier 2 is via the

[0064] Intermediate film 5 is produced. In the areas where the semiconductor chip 3 is located, the connection of the intermediate film 5 to the connector carrier 2 is made indirectly via the semiconductor chip 3, that is, the intermediate film 5 adheres to the semiconductor chip 3, which in turn adheres to the connector carrier 2.

[0065] The semiconductor chip 3 can, for example, be designed as a light-emitting diode. The materials of the encapsulating body 4 and the intermediate film 5 are preferably selected such that the electromagnetic radiation emitted by the semiconductor chip 3 during its operation is not absorbed by the encapsulating body 4. A lens-like shape of the encapsulating body 4 directs the light emitted by the semiconductor chip 3 into a specific spatial region.

[0066] During operation, semiconductor chip 3 typically heats up significantly. Temperature differences between Standby mode and operating temperature of 50 0 C, or even 100 0C and more can occur. Due to the different thermal expansion rates of semiconductor chip 3 and potting compound 4, mechanical stresses arise. Starting at the edges of semiconductor chip 3, there is a risk of cracking in the potting compound 4 due to thermal expansion. In addition to improving adhesion between the connector carrier 2 and the potting compound 4, the intermediate film 5, which can be made of a silicone that retains some flexibility even in its cured state, reduces the mechanical stress caused by thermal expansion. The intermediate film 5 acts as a kind of buffer between semiconductor chip 3 and potting compound 4.

[0067] The connector 2, the electrical conductors 8, and the semiconductor chip 3 form a further cavity located between the connector 2 and the semiconductor chip 3. This further cavity does not border the intermediate film 5.

[0068] Optionally, the connector 2 and the electrical conductors 8 can be made of a material that is transparent to the electromagnetic radiation emitted or received by the semiconductor chip 3. This allows, for example, an omnidirectional emitting

[0069] Semiconductor components can be implemented. Alternatively, the electrical conductors 8 can, for example, be made of a metal, so that the radiation emitted by the semiconductor chip 3 towards the connector carrier 2 is reflected by the electrical conductors 8 towards the potting compound 4. Figure 2 shows another embodiment. The structure is similar to that shown in Figure 1. The terminal carrier 2 is made of metal. To prevent short circuits, an electrical insulator 12 is applied between the conductor tracks 8 and the terminal carrier 2 at the corresponding locations. The semiconductor chip 3 is mounted on the electrical conductors 8 such that the entire surface of the semiconductor chip 3 facing the terminal carrier 2 rests on the electrical conductor 8a. A second electrical conductor 8c is routed from the light-transmitting surface 30 to another electrical conductor 8b. The electrical conductor 8c, designed as a bond wire, is guided through recesses 10 in the intermediate film 5. In this embodiment, the intermediate film 5 lies close to the chip flanks 6, so that the cavity 11 occupies only a very small volume.The electrical conductors 8a, 8b are designed to act as reflectors for the radiation received or emitted by the semiconductor chip 3. The encapsulating body 4 is designed as a Fresnel lens. This allows for a particularly flat optoelectronic component 1.

[0070] Alternatively, the potting compound 4 can also have other structures, such as grooves, which can, for example, cause directed light emission, improved light ingress or emission, or uniform light emission from the component 1.

[0071] In the embodiment shown in Figure 3, the semiconductor chip 3 is bonded to a terminal carrier 2, which may, for example, be made of metal. The side of the semiconductor chip 3 facing the terminal carrier 2 is preferably electrically insulating. The terminal side 20 of the The connector 2 reflects the radiation received or emitted by the semiconductor chip 3. Alternatively, the semiconductor chip 3 can be designed as a so-called top emitter. This means that the radiation emitted by the semiconductor chip 3 is generated near the radiation transmission surface 30. When using a top emitter, no reflective elements are needed, for example, at the connector side 20.

[0072] The intermediate film 5 is applied across the entire surface of the connector carrier 2 and the semiconductor chip 3. The cavity 11 is relatively large. As a result, the intermediate film 5, which covers the entire radiation transmission surface 30 and leaves the chip flanks 6 exposed, tapers relatively gently towards the connector carrier 2. This allows the

[0073] The area of ​​the intermediate film 5 facing away from the connector carrier 2 is not significantly larger than the projection of this area onto the connector carrier 2. This means, in particular, that electrical conductors 8 can be created on the intermediate film 5, for example by means of a photolithographic process or by vapor deposition. For contacting the semiconductor chip 3, recesses 10 are provided in the intermediate film 5 on the side of the semiconductor chip 3 facing away from the connector carrier 2, which also corresponds to the radiation transmission area 30.

[0074] Through the cutouts 10, a via 9 is made from the undrawn contact pads of the semiconductor chip 3 to the electrical conductors 8. The vias 9 can also be created, for example, by means of a photolithographic process.

[0075] The process is created. For example, the metallic electrical conductors 8 occupy only a small area fraction of the intermediate film 5 and the Radiation transmission surface 30. The potting compound 4, which has a flat surface, therefore adheres essentially to the intermediate film 5 and via this to the connecting carrier 2.

[0076] Optionally, the intermediate carrier 5 can contain an additive 7. If, for example, the semiconductor chip 3 is designed as a photodiode, the spectral range that the semiconductor chip 3 is to detect can be limited by the additive 7. Possible additives 7 in this case are, for example, pigments or dyes. The intermediate film 5 can also contain several different additives 7 such as conversion agents, luminescent substances, filter agents, or diffusion agents.

[0077] In the embodiment shown in Figure 4, the potting compound 4 is provided with an additive 7. One or more additives 7 can be designed, for example, as described in Figure 3. Additives 7 that, for example, influence the mechanical or chemical properties of the potting compound 4 are also possible. The semiconductor chip 3 is designed as a flip chip, as in the embodiment shown in Figure 1. The electrical conductors 8 occupy a large portion of the side of the semiconductor chip 3 facing the terminal carrier 2. The semiconductor chip 3 is connected to the electrical conductors 8, and thus to the terminal carrier 2, by means of SMT soldering technology, i.e., surface mount technology.

[0078] In this embodiment, the intermediate film 5 has a recess 10 in the area of ​​the radiation transmission surface 30, so that this surface is essentially uncovered by the intermediate film 5. With the exception of the recess 10, the Intermediate film applied over the entire connection carrier 2.

[0079] The intermediate layer 5 can optionally be made of a radiation-impermeable material, so that, for example, the electrical conductors 8 are concealed. This means that the conductors 8 are not visible from outside component 1.

[0080] The connection carrier 2 can be designed, for example, in the form of a printed circuit board with a mechanically flexible plastic substrate.

[0081] Figure 5 shows an embodiment in which two semiconductor chips 3 are covered by a single potting compound 4. The semiconductor chips 3, which can be configured, for example, as laser diodes, are each mounted on electrical conductors 8a, 8b over their entire surface facing the terminal carrier 2. The electrical conductors 8a, 8b are metallic and reflect the electromagnetic radiation emitted or received by the semiconductor chips 3. The terminal carrier 2 itself is formed from a preferably thermally conductive ceramic. The intermediate film 5 covers the two semiconductor chips 3 in such a way that a cavity IIb is formed between the facing chip faces 6.

[0082] The intermediate film 5, which is transparent to the radiation emitted or received by the semiconductor chips 3, has recesses 10 at the radiation transmission surfaces 30 of the semiconductor chips 3. These recesses 10 contain vias 9, which are connected via a Electrical conductor 8b connects both chips electrically. This creates an electrical series circuit. The vias 9 and the electrical conductor 8b can, for example, be created by vapor deposition. They occupy only a small area of ​​the radiation transmission surfaces 30. Both semiconductor chips 3 are covered by a lens-shaped encapsulator 4. Unlike the one shown in Figure 5, the encapsulator 4 can also have sub-lenses for each individual semiconductor chip 3.

[0083] It is also possible for several semiconductor chips 3 to be arranged two-dimensionally, for example in a 2 x 2 pattern. The resulting four semiconductor chips 3 could consist of, for instance, two green-emitting, one red-emitting, and one blue-emitting semiconductor chip 3, together forming a white light source. Larger arrays of, for example, 3 x 3 or 4 x 4 semiconductor chips 3, which can also be arranged irregularly, are also possible. This is particularly true if the connecting carrier 2 is made of a highly thermally conductive material and also has contact with an external heat sink (not shown).

[0084] The semiconductor chips 3 can be connected in series, as shown in Figure 5. Since an insulating intermediate layer or cover layer is provided on the semiconductor chips 3 via the intermediate carrier 5, it is particularly easy to attach electrical conductors 8c over the radiation transmission surfaces 30 of the semiconductor chips 3, which are connected to the semiconductor chips 3 via vias 9. This can result in a highly densely packed chip array.

[0085] As an alternative to the series connection shown in Figure 5, it is also possible for the individual semiconductor chips 3, which emit in a certain color, to be connected in parallel or arranged in separate circuits in order to control and vary the color emitted by the semiconductor chips 2 via the current supply to the semiconductor chips 3. The electrical conductors 8c can then run essentially parallel to and over the electrical conductors 8a, 8b. The insulating intermediate film 5 thus makes it possible to easily implement a two-layer conductor arrangement located on both sides of the intermediate film 5.

[0086] According to the embodiment shown in Figure 6, a thin-film chip 3 is used. This semiconductor chip 3 is designed as a flip chip. It has a thickness of only 6 μm. The intermediate film 5, which contains an additive 7, is therefore significantly thicker than the semiconductor chip 3 itself. The use of very thin semiconductor chips 3 facilitates the lamination of the intermediate film 5, since the structures on the connection side 20 are comparatively small compared to the thickness of the intermediate film 5. The lens-shaped potting compound 4 also contains an additive 7.

[0087] Figures 7a to 7f schematically illustrate process steps for manufacturing an optoelectronic component 1. The sequence of process steps shown in Figure 7 is considered advantageous, but can also be modified depending on requirements. This applies especially for the step of applying the electrical wires 8.

[0088] In a first process step according to Figure 7a, a connector carrier 2 and a plurality of semiconductor chips 3 are provided. In contrast to Figure 7a, more than two semiconductor chips 3 can be applied to the connector carrier 2, for example by gluing, soldering, or epitaxial waxing. The semiconductor chips 3 can also be arranged in a two-dimensional pattern.

[0089] In a subsequent process step, as shown in Figure 7b, an intermediate carrier 5 is laminated. The intermediate carrier 5 is formed from a silicone film. Preferably, the application of the intermediate carrier 5 is a two-stage process. In a first step, a pre-cured silicone film with a soft or viscous consistency is applied. In a second step, the pre-cured intermediate film 5 is then cured, for example, by UV radiation or heat treatment. Applying the pre-cured intermediate film and the subsequent complete curing ensures particularly good contact with the connecting carrier 2, so that the intermediate film 5 adheres well to the connecting carrier 2.

[0090] In a subsequent process step, shown in Figure 7c, recesses 10 are created in the intermediate film 5. This can be done, for example, by laser ablation. Here, a pulsed laser, preferably with a wavelength that is absorbed by the intermediate film 10, is focused onto the intermediate film 5. The laser can be, for example, a frequency-tripled Nd:YAG laser emitting at 355 nm with nanosecond pulses. The focus size of the laser can For example, the structure sizes can be specified. It is also possible to create structures in the intermediate film 5 using a raster method. Alternatively, cutouts can also be created, for example, using lithographic processes, also in combination with etching processes, or mechanically, for example by milling.

[0091] Figure 7d shows that electrical conductors 8 and vias 9 are applied to the side of the intermediate film 5 facing away from the terminal carrier 2.

[0092] Vias 9 and electrical conductors 8 occupy only a very small proportion of the surface of the intermediate carrier 5 facing away from the connecting carrier 2, and thus also of the radiation transmission surfaces 30. Since the electrical conductors 8 can, for example, be vapor-deposited, even more complex conductor patterns can be easily implemented.

[0093] Alternatively, it is possible for the semiconductor chips to be contacted via the connection side 20, as shown in Figure 1, or on opposite sides of the semiconductor chip 3 via bond wires, as shown in Figure 2.

[0094] In a further process step, shown in Figure 7e, a casting mold 40 is pressed onto the connecting carrier 2. The connecting carrier 2 forms part of the mold relevant for casting. Depending on the design of the intermediate film 5, it is possible to dispense with a commonly used sealing film attached to the casting mold 40, since the intermediate film 5 can ensure sufficient sealing between the casting mold 40 and the connecting carrier 2. After the casting mold 40 has been applied, the casting body 4 is then cast. The adhesion promoter The connection between the potting body 4 and the connecting carrier 2 is made via the intermediate foil 5.

[0095] In a further process step, see Figure 7 f, the semiconductor chips 3 with associated potting bodies 4 can be separated, resulting in a large number of optoelectronic semiconductor components 1.

[0096] This singulation step can be omitted, depending on requirements. It is then possible for differently emitting semiconductor chips 3 or different additives 7, especially conversion agents, to be applied in different areas on the connection carrier 2, so that, corresponding to the embodiment shown in Figure 5, white light sources can result.

[0097] The invention described here is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments.

[0098] This patent application claims priority over German patent application 10 2008 016 487.9, the disclosure content of which is hereby incorporated by reference.

Claims

Patent claims 1. Optoelectronic semiconductor component (1) with - a connecting carrier (2) with a connecting side (20) , - at least one optoelectronic semiconductor chip (3) , which is attached to the connection side (20) and electrically connected to the connection carrier (2), - an adhesion-promoting intermediate film (5) applied to the connection side (20) and covering it at least partially, and - at least one radiation-transparent potting body (4) that at least partially surrounds the semiconductor chip (3), wherein the potting body (4) is mechanically connected to the connector carrier (2) by means of the intermediate film (5).

2. Optoelectronic semiconductor component (1) according to claim 1, in which a radiation transmission surface (30) of the semiconductor chip (3) is at least partially covered by the intermediate film (5).

3. Optoelectronic semiconductor component (1) according to claim 1 or 2, wherein the intermediate film (5) is designed with a silicone film.

4. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the semiconductor chip (3) has chip flanks (6), and in which the intermediate film (5), the connection side (20) and the chip flanks (6) enclose a cavity.

5. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the potting body (4) is designed with or consists of a silicone.

6. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the potting body (4) and / or the intermediate film (5) contains at least one admixture in the form of a diffuser, conversion and / or filtering agent.

7. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the contact carrier (2) is designed with a metal or a metal alloy, a plastic or a ceramic.

8. Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the intermediate film (5) is opaque to radiation, and wherein the intermediate film (5) has at least partially a recess (10) at the radiation transmission surface (20).

9. Optoelectronic semiconductor component (1) according to one of the preceding claims, which is housing-free except for the connection carrier (2), the intermediate film (5) and the potting body (4).

10. Method for manufacturing an optoelectronic semiconductor component (1) according to claim 1 comprising the steps of providing a connector carrier (2) with a connector side (20) , - Providing at least one semiconductor chip (3), - Attaching the semiconductor chip (3) to the connection side (20) , - Applying an intermediate film (5) to the connection side (20) , and - Creating a potting compound (4) .

11. Method according to claim 10, wherein the intermediate film (5) is applied over the entire surface of the connection side (20) as well as on the semiconductor chip (3).

12. Method according to claim 10 or 11, wherein the application of the intermediate film comprises the steps: - Laminating a partially cross-linked intermediate film (5) onto the connection side (20) , and - curing the laminated intermediate film (5).

13. Method according to one of claims 10 to 12, wherein the casting body (4) is produced by means of compression molding, and the connecting carrier (2) forms part of the casting mold.

14. Method according to one of claims 10 to 13, wherein at least one recess (10) is created in the intermediate film (5) by means of laser ablation.

15. Method according to any one of claims 10 to 14, wherein a semiconductor component (1) is manufactured according to any one of claims 2 to 9.