METHOD FOR MANUFACTURING A TFT PANEL AND TFT PANEL
Patent Information
- Application Number
- DE602017086765
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2017-03-30
- Filing Date
- 2017-05-12
- Publication Date
- 2024-12-11
- Estimated Expiration
- 2037-05-12
AI Technical Summary
In conventional TFT backplane fabrication, the nitride layer from the driver TFT diffuses during high-temperature processing, contaminating the non-polysilicon material of the switching TFT and reducing the overall performance of the backplane.
A method is developed where a polysilicon active region is formed on a substrate, followed by sequential deposition of an oxide and nitride layer to create a first insulating layer. The nitride layer is then selectively removed using dry etching self-aligned with gate electrodes, ensuring it remains only between the oxide layer and the gate electrodes, preventing diffusion and contamination of the switching TFT active region.
This approach significantly reduces the contamination of the switching TFT by the nitride layer, enhancing the performance of the TFT backplane by blocking nitride diffusion during high-temperature processing.