COMBINED SPIN-RAIL TORQUE AND SPIN TRANSMISSION TORQUE SWITCHING FOR MAGNETORESISTIVE DEVICES AND METHOD THERE FOR IT
DE602019086136T2Active Publication Date: 2026-07-01EVERSPIN TECHNOLOGIES INC
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Patent Information
- Application Number
- DE602019086136
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2018-07-25
- Filing Date
- 2019-07-23
- Publication Date
- 2026-07-01
- Estimated Expiration
- 2039-07-23
AI Technical Summary
Technical Problem
As magnetic memory devices advance towards smaller process nodes, the decrease in shape anisotropy of MTJ bits leads to a decrease in energy barrier, affecting data retention and thermal stability, and increasing critical current, which results in periodic damage and reduced endurance.
Method used
Integration of spin-orbit torque (SOT) and spin-transfer torque (STT) switching mechanisms in magnetoresistive devices to enhance switching efficiency without high magnitudes of write current, maintaining a high energy barrier.
Benefits of technology
Improves switching efficiency and reduces critical current, enhancing the longevity and durability of magnetoresistive memory devices while maintaining data integrity.
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