SENSOR AND ELECTRONIC DEVICE

DE602021028060T2Active Publication Date: 2025-03-26SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
DE602021028060
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-10-22
Filing Date
2021-10-25
Publication Date
2025-03-26
Estimated Expiration
2041-10-25

AI Technical Summary

Technical Problem

Existing infrared sensors face challenges in achieving improved sensitivity in low illumination environments and optimal performance as biometric devices due to limitations in energy band gaps and absorption wavelengths of materials used in their photoelectric conversion layers.

Method used

A sensor design incorporating a ternary infrared photoelectric conversion layer with specific energy band gaps and composition ratios of materials, including a third material with a wider energy band gap, which enhances sensitivity and shifts the maximum absorption wavelength to longer wavelengths, improving electrical properties and reducing dark current.

Benefits of technology

The sensor exhibits enhanced sensitivity in low illumination conditions and improved optical characteristics, enabling effective use in biometric applications by extending the dynamic range and increasing sensing capability.

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