METHOD FOR PRODUCING ACTIVE RECONSTRUCTED WAFERS

DE602021031320T2Active Publication Date: 2025-05-21HUAWEI TECH CO LTD
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Patent Information

Application Number
DE602021031320
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-05-31
Publication Date
2025-05-21
Estimated Expiration
2041-05-31
Patent Text Reader

Abstract

Provided is a method of manufacturing an active reconstructed wafer including a plurality of chiplets. The method includes dicing a product wafer including chiplets to singulate the chiplets using plasma dicing on a glass carrier, selecting good dies for chiplets using laser release and a pick-up tool, bonding the selected good dies to a sacrificial wafer, filling gaps between chiplets thereby forming a first layer forming the active reconstructed wafer, thinning of the selected good dies, bonding the reconstructed wafer to a silicon wafer, removing the sacrificial wafer, connecting chiplets, stacking further dies in at least one further layer, and then forming interconnects for attachment.
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