SEMICONDUCTOR COMPONENT AND LAYOUT FOR GATE ELECTRODES
Patent Information
- Application Number
- DE602021033663
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-12-15
- Filing Date
- 2021-08-19
- Publication Date
- 2025-07-09
- Estimated Expiration
- 2041-08-19
AI Technical Summary
The scaling-down of silicon carbide MOSFETs is hindered by increased leakage current and short-circuit risks at the connection points between gate electrodes and gate wiring lines due to thinning interlayer insulating layers, leading to instability and reduced reliability.
The MOSFET design incorporates specific distance relationships between gate electrodes and gate wiring lines, ensuring that S1 < S3, S1 < S2, and S3 > S4, along with a built-in Schottky barrier diode, to maintain adequate interlayer insulating layer thickness and reduce heat concentration, thereby preventing short circuits and enhancing reliability.
This design allows for scalable MOSFETs with improved reliability and stable operation by minimizing short circuits and uniform heat distribution, ensuring stable characteristics and increased on-current.