DYNAMIC SINTERING PROCESS FOR A NITRIDE CERAMIC SUBSTRATE

Description

[0001] The present application claims priority to Chinese Patent Application No. 202210349584.8 filed to the China National Intellectual Property Administration (CNIPA) on April 02, 2022 and entitled "DYNAMIC SINTERING METHOD FOR NITRIDE CERAMIC SUBSTRATE'.TECHNICAL FIELD

[0002] The present disclosure relates to the technical field of ceramic materials, and in particular to a dynamic sintering method for a nitride ceramic substrate.BACKGROUND

[0003] Ceramic substrates serve as an important component of power semiconductor modules, playing the role of load bearing, heat dissipation, and insulation. Since being subjected to large thermal and mechanical stresses during operation, the ceramic substrates must have high thermal conductivity and excellent mechanical properties. Nitride ceramic substrates (aluminum nitride and silicon nitride) have become a preferred material for ceramic substrates of high-power devices due to their high thermal conductivity.

[0004] Nitrides such as silicon nitride and aluminum nitride are covalently-bonded compounds, which are difficult to sinter, and a certain amount of sintering aids must be added to achieve sintering densification. In addition, these nitrides show a high sintering shrinkage rate and are prone to deformation, thus greatly increasing the difficulty of preparing nitride substrates. In order to reduce the shrinkage deformation of nitride substrates during sintering, "press sintering" is generally adopted, that is, a flat plate of a certain weight is pressed on a top of the substrate to prevent deformation during the sintering. However, the pressing plate may also hinder the shrinkage of substrates to a certain extent, and even cause cracking of the substrates during sintering shrinkage. Therefore, it is necessary to further explore a sintering method suitable for nitride ceramic substrates.

[0005] JP 2001 019562 A describes the sintering of a flat ceramic body sandwiched between setter plates separated by pillar supports that shrink during sintering.SUMMARY

[0006] An object of the present invention is to provide a dynamic sintering method for a nitride ceramic substrate. The dynamic sintering method could realize a dynamic process from non-contact to contact between a pressing plate and a substrate during sintering, thereby avoiding deformation and cracking of the nitride ceramic substrate during the sintering.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] The present invention provides a dynamic sintering method for a nitride ceramic substrate, including the following steps: arranging the nitride ceramic substrate between n support blocks with a same height in a non-contact manner, and placing a pressing plate above the n support blocks with the same height; where n is not less than 2; the pressing plate and the nitride ceramic substrate are arranged in parallel, and a spacing distance between the pressing plate and the nitride ceramic substrate is in a range of 0.01 mm to 1 mm; and a length of the pressing plate is greater than a length of the nitride ceramic substrate, and a width of the pressing plate is greater than a width of the nitride ceramic substrate; and adjusting a composition of a sintering aid of the support blocks and / or a molding pressure of the support blocks, such that a shrinkage starting temperature of the support blocks is less than a shrinkage starting temperature of the nitride ceramic substrate, and a linear shrinkage rate of the support blocks in a height direction is greater than a linear shrinkage rate of the nitride ceramic substrate in a height direction, wherein the shrinkage starting temperature of the support blocks (3) is in a range of 1,300°C to 1,700°C; and the linear shrinkage rate of the support blocks (3) in the height direction is in a range of 16% to 24%, and wherein a difference between the shrinkage starting temperature of the support blocks (3) and the shrinkage starting temperature of the nitride ceramic substrate (4) is in a range of 30°C to 100°C; and a difference between the linear shrinkage rate of the support blocks (3) in the height direction and the linear shrinkage rate of the nitride ceramic substrate (4) in the height direction is in a range of 0.2% to 6%; and subjecting a resulting system to sintering to obtain a sintered nitride ceramic substrate; where the sintering is conducted as follow: heating the resulting system to a temperature of 1,700° C to 2,000° C at a heating rate of 0.1 ° C / min to 10° C / min, and holding at the temperature for 1 h to 12 h, wherein the shrinkage starting temperature is a temperature at which the linear shrinkage rate in the height direction is 5%, the shrinkage starting temperature and the linear shrinkage rate in the height direction of the support blocks (3) are obtained from sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4), and the sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4) are measured by a high-temperature thermal expansion instrument.

[0009] In some embodiments, the nitride ceramic substrate is selected from the group consisting of a silicon nitride substrate and an aluminum nitride substrate; and a molding process of the nitride ceramic substrate is selected from the group consisting of tape casting, dry pressing, gel casting, and dough rolling.

[0010] In some embodiments, the nitride ceramic substrate has a thickness of 0.2 mm to 2.0 mm, a length of not more than 300 mm, and a width of not more than 300 mm.

[0011] In some embodiments, the nitride ceramic substrate is in a number of not less than 1; under the condition that the nitride ceramic substrate is in a number of greater than 1, a plurality of nitride ceramic substrates are laminated in a lamination layer number of not more than 30, adjacent nitride ceramic substrates are separated by a boron nitride isolation powder layer; and boron nitride isolation powder layers in different layers independently have a thickness of 20 µm to 300 µm.

[0012] In some embodiments, the pressing plate is made from a material selected from the group consisting of boron nitride, silicon nitride, aluminum nitride, and graphite.

[0013] In some embodiments, a weight of the pressing plate is calculated as W=P×S / 9.8-(N-1)×W1, where P represents a pressure of a bottom nitride ceramic substrate, and P is 30 Pa to 500 Pa; S represents an area of thrust surface of the nitride ceramic substrate, in m 2< ; N represents a lamination layer number of the nitride ceramic substrate, and N is 1 to 30; and W1 represents a weight of a single nitride ceramic substrate, in kg.

[0014] In some embodiments, a material of the support blocks is the same as a material of the nitride ceramic substrate; and a molding process of the support blocks is selected from the group consisting of dry pressing and cold isostatic pressing, an upper surface and a lower surface of each of the support blocks are parallel, and each of the support blocks has a cross-sectional area of not less than 30 mm 2< .

[0015] The present invention provides a dynamic sintering method for a nitride ceramic substrate. In the present disclosure, depending on differences between support blocks and the nitride ceramic substrate in the shrinkage starting temperature and the shrinkage rate, the shrinkage starting temperature of the support blocks is controlled to be less that of the nitride ceramic substrate, and the linear shrinkage rate in the height direction of the support blocks is controlled to be greater than that of the nitride ceramic substrate, such that the dynamic sintering process from non-contact to contact between the pressing plate and the substrate during the sintering can be achieved, thereby avoiding cracking of the substrate during the sintering, and reducing deformation of the substrate during the sintering, making it possible to achieve a warping degree of the substrate of less than 1.0 µm / mm.BRIEF DESCRIPTION OF THE DRAWINGS

[0016] FIG. 1 shows a schematic diagram of a dynamic sintering method for the nitride ceramic substrate according to the invention, where 1 represents a boron nitride composite crucible, 2 represents a pressing plate, 3 represents a support block, 4 represents a nitride ceramic substrate, and 5 represents a boron nitride isolation powder layer; FIG. 2 shows a schematic diagram of a dynamic sintering method for the nitride ceramic substrate according to an embodiment of the present disclosure, not claimed; FIG. 3 shows curves of the support block and the substrate changing with temperature in Example 1; and FIG. 4 shows curves of the support block and the substrate changing with temperature in comparative Example 1. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The present invention provides a dynamic sintering method for a nitride ceramic substrate, including the following steps: arranging the nitride ceramic substrate between n support blocks with a same height in a non-contact manner, and placing a pressing plate above the n support blocks with the same height; where n is not less than 2; the pressing plate and the nitride ceramic substrate are arranged in parallel, and a spacing distance between the pressing plate and the nitride ceramic substrate is in a range of 0.01 mm to 1 mm; and a length of the pressing plate is greater than a length of the nitride ceramic substrate, and a width of the pressing plate is greater than a width of the nitride ceramic substrate; and adjusting a composition of a sintering aid of the support blocks and / or a molding pressure of the support blocks, such that a shrinkage starting temperature of the support blocks is less than a shrinkage starting temperature of the nitride ceramic substrate, and a linear shrinkage rate of the support blocks in a height direction is greater than a linear shrinkage rate of the nitride ceramic substrate in a height direction, wherein the shrinkage starting temperature of the support blocks (3) is in a range of 1,300°C to 1,700°C; and the linear shrinkage rate of the support blocks (3) in the height direction is in a range of 16% to 24%, and wherein a difference between the shrinkage starting temperature of the support blocks (3) and the shrinkage starting temperature of the nitride ceramic substrate (4) is in a range of 30°C to 100°C; and a difference between the linear shrinkage rate of the support blocks (3) in the height direction and the linear shrinkage rate of the nitride ceramic substrate (4) in the height direction is in a range of 0.2% to 6%; and subjecting a resulting system to sintering to obtain a sintered nitride ceramic substrate; where the sintering is conducted as follow: heating the resulting system to a temperature of 1,700° C to 2,000° C at a heating rate of 0.1° C / min to 10° C / min, and holding at the temperature for 1 h to 12 h, wherein the shrinkage starting temperature is a temperature at which the linear shrinkage rate in the height direction is 5%, the shrinkage starting temperature and the linear shrinkage rate in the height direction of the support blocks (3) are obtained from sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4), and the sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4) are measured by a high-temperature thermal expansion instrument.

[0018] In the present disclosure, unless otherwise specified, all materials or reagents used are commercially available products well known to those skilled in the art.

[0019] In the present invention, the nitride ceramic substrate is arranged between n support blocks with a same height in a non-contact manner; where n is not less than 2. In the present disclosure, in some embodiments, the nitride ceramic substrate is selected from the group consisting of a silicon nitride substrate and an aluminum nitride substrate. In some embodiments, a molding process of the nitride ceramic substrate is selected from the group consisting of tape casting, dry pressing, gel casting, and dough rolling. There is no particular limitation on a specific preparation process of the nitride ceramic substrate, and any process well known to those skilled in the art may be used.

[0020] In the present invention, in some embodiments, the nitride ceramic substrate has a thickness of 0.2 mm to 2.0 mm, and preferably 0.5 mm to 1.5 mm. In the present disclosure, in some embodiments, the nitride ceramic substrate has a length of not more than 300 mm, and preferably 150 mm. In the present disclosure, in some embodiments, the nitride ceramic substrate has a width of not more than 300 mm, and preferably 150 mm.

[0021] In the present invention, the nitride ceramic substrate is in a number of not less than 1. In some embodiments, under the condition that the nitride ceramic substrate is in a number of greater than 1, a plurality of nitride ceramic substrates are laminated in a lamination layer number of not more than 30, and preferably 5 to 20. In some embodiments, adjacent nitride ceramic substrates are separated by a boron nitride isolation powder layer. In some embodiments, boron nitride isolation powder layers in different layers independently have a thickness of 20 µm to 300 µm, and preferably 50 µm to 200 µm.

[0022] In the present invention, the nitride ceramic substrate is arranged between n support blocks with a same height in a non-contact manner. In some embodiments, a material of the support blocks is the same as a material of the nitride ceramic substrate. In some embodiments, a molding process of the support blocks is dry pressing and / or cold isostatic pressing, an upper surface and a lower surface of each of the support blocks are parallel, and each of the support blocks has a cross-sectional area of not less than 30 mm 2< . There is no special limitation on shape and preparation process of the support blocks, any process known in the art may be used and adjusted according to actual demands. In the examples, each of the support blocks has a size of 10 mm × 10 mm × 5.2 mm or 10 mm × 10 mm × 7.8 mm, and a composition of a sintering aid of the support blocks is 5% yttrium oxide (by mass percentage relative to a total mass of the silicon nitride support blocks) and 5% aluminum oxide (by mass percentage relative to a total mass of the silicon nitride support blocks); and in some embodiments, the molding is conducted at a pressure of 50 MPa. Alternatively, the support blocks are made of aluminum nitride and each have a size of 20 mm×20 mm×1.52 mm, and a composition of a sintering aid of the support blocks is 10% neodymium oxide (by mass percentage relative to a total mass of the aluminum nitride support blocks); and in some embodiments, the molding is conducted at a pressure of 20 MPa.

[0023] In the present invention, embodiments, the shrinkage starting temperature of the support blocks is in a range of 1,450° C to 1,600° C.

[0024] In the present invention, a pressing plate is placed above the n support blocks of the same height. In the present disclosure, in some embodiments, the pressing plate and the nitride ceramic substrate are arranged in parallel, and a spacing distance between the pressing plate and the nitride ceramic substrate is in a range of 0.01 mm to 1 mm, and preferably 0.02 mm to 0.03 mm. In some embodiments, a length of the pressing plate is greater than a length of the nitride ceramic substrate, and a width of the pressing plate is greater than a width of the nitride ceramic substrate. In some embodiments, a difference between the length of the pressing plate and the length of the nitride ceramic substrate is not less than 10 mm. In some embodiments, a difference between the width of the pressing plate and the width of the nitride ceramic substrate is not less than 10 mm.

[0025] In the present disclosure, in some embodiments, the pressing plate is made from a material selected from the group consisting of boron nitride, silicon nitride, aluminum nitride, and graphite.

[0026] In the present disclosure, a weight of the pressing plate is calculated as W=P×S / 9.8-(N-1)×W1, where P represents a pressure of a bottom nitride ceramic substrate, and P is 30 Pa to 500 Pa; S represents an area of thrust surface of the nitride ceramic substrate, in m 2< ; N represents the lamination layer number of the nitride ceramic substrate, and N is 1 to 30; and W1 represents a weight of a single nitride ceramic substrate, in kg.

[0027] In the present invention, a composition of a sintering aid and / or a molding pressure of the support blocks are adjusted, such that a shrinkage starting temperature of the support blocks is less than a shrinkage starting temperature of the nitride ceramic substrate, and a linear shrinkage rate of the support blocks in a height direction is greater than a linear shrinkage rate of the nitride ceramic substrate in a height direction. In some embodiments, the sintering is conducted to obtain a sintered nitride ceramic substrate; where the sintering is conducted as follow: heating the resulting system to a temperature of 1,850° C to 1,900° C at a heating rate 1° C / min to 5° C / min, and holding at the temperature for 3 h to 6 h.

[0028] In the present invention, in some embodiments, a difference between the shrinkage starting temperature of the support blocks and the shrinkage starting temperature of the nitride ceramic substrate is in a range of 50° C to 80° C. In some embodiments, a difference between the linear shrinkage rate of the support blocks in the height direction and the linear shrinkage rate of the nitride ceramic substrate in the height direction is in a range of 2.1% to 3.3%.

[0029] As one embodiment of the present invention shown in FIG. 1, in an early stage of sintering, the pressing plate and the nitride ceramic substrate are non-contacting. In a middle stage of sintering, since the shrinkage starting temperature of the support blocks is less than that of the nitride ceramic substrate, the shrinkage starting time is earlier than that of the nitride ceramic substrate, and the weight of the pressing plate gradually falls on the nitride ceramic substrate (panel b in FIG. 1), preventing the nitride ceramic substrate from being deformed due to drastic shrinkage. At this time, the number of pores is reduced, and a strength of the substrate is greatly improved compared to that when the debinding is just completed, and the substrate would not crack due to the weight of the bearing pressing plate.

[0030] As the other embodiment of the present disclosure, not claimed, shown in FIG. 2, in an early stage of sintering, the pressing plate and the nitride ceramic substrate are non-contacting. In a middle stage of sintering, since the shrinkage starting temperature of the support blocks is greater than that of the nitride ceramic substrate, the shrinkage starting time is later than that of the nitride ceramic substrate, and the nitride ceramic substrate begins to shrink, and then touches the pressing plate when deforming (panel b in FIG. 2). At this time, the deformation is restricted, but the shrinkage of substrate is basically not affected. Since the linear shrinkage rate of the support block in the height direction is greater than that of the nitride ceramic substrate, the weight of the pressing plate gradually falls on the substrate (panel c in FIG. 2), playing a role in high-temperature smoothing. There is no special definition for concepts of the early stage of sintering and the middle stage of sintering, which may be understood according to the definitions well known in the art.Example 1

[0031] Arranged as shown in FIG. 1: a size of the silicon nitride substrate was 150 mm × 150 mm × 0.5 mm, and a weight of a single silicon nitride substrate was 0.023 kg. A composition of a sintering aid of the silicon nitride substrates was 5% erbium oxide (by mass percentage relative to a total mass of the silicon nitride substrates) and 3% magnesium oxide (by mass percentage relative to the total mass of the silicon nitride substrates), and a molding process was tape casting. Nitride ceramic substrates were laminated in a lamination layer number of 10. Each boron nitride isolation powder layer has a thickness of 50 µm. The pressing plate was made of boron nitride with a weight of 250 g. A spacing distance between the pressing plate and the nitride ceramic substrate was 0.02 mm. A length and a width of the pressing plate were both 20 mm larger than those of the substrate. A pressure on a bottom silicon nitride substrate was 200 Pa. The support block was made of silicon nitride, with a size of 10 mm × 10 mm × 5.2 mm. A composition of a sintering aid of the support blocks was 5% yttrium oxide (by mass percentage relative to a total mass of the silicon nitride support blocks) and 5% aluminum oxide (by mass percentage relative to the total mass of the silicon nitride support blocks), a molding process was dry pressing, and the molding was conducted at a pressure of 50 MPa.

[0032] The silicon nitride substrate was sintered by heating to a temperature of 1,900° C at a heating rate of 0.1° C / min to 10° C / min, and then holding at the above temperature for 6 h to obtain a sintered silicon nitride substrate. 1) A warping degree of the sintered silicon nitride substrate was measured as follows: the sintered silicon nitride substrate was placed horizontally, an entire surface of the sintered silicon nitride substrate was scanned with a three-dimensional laser measuring instrument, and a difference between the highest point and the lowest point on the surface was taken as a warping amount (µm) of the substrate. A result of dividing the warping amount (µm) by the length of a diagonal line (mm) was the warping degree, and the warping degree of the sintered silicon nitride substrate in Example 1 was 0.5 µm / mm. 2) A temperature at which the linear shrinkage rate was 5% was specified as the shrinkage starting temperature. The sintering linear shrinkage curves of the support block and the substrate were measured by a high-temperature thermal expansion instrument, and the results are shown in FIG. 3. As shown in FIG. 3, the silicon nitride substrate has a shrinkage starting temperature of 1,500° C and a linear shrinkage rate of 17.2% in the height direction; and the support block has a shrinkage starting temperature of 1,450° C and a linear shrinkage rate of 20.5% in the height direction. The support block has a lower shrinkage starting temperature than that of the substrate, and a higher linear shrinkage rate in the height direction than that of the substrate, thereby realizing a dynamic process from non-contact to contact during the sintering. Example 2

[0033] Arranged as shown in FIG. 1: a size of the silicon nitride substrate was 180 mm × 180 mm × 0.5 mm, and a weight of a single silicon nitride substrate was 0.033 kg. A composition of a sintering aid of the silicon nitride substrates was 5% erbium oxide (by mass percentage relative to a total mass of the silicon nitride substrates) and 3% magnesium oxide (by mass percentage relative to the total mass of the silicon nitride substrates), and a molding process was tape casting. Nitride ceramic substrates were laminated in a lamination layer number of 15, Each boron nitride isolation powder layer has a thickness of 100 µm. The pressing plate was made of boron nitride with a weight of 530 g. A spacing distance between the pressing plate and the nitride ceramic substrate was 0.01 mm. A length and a width of the pressing plate were both 20 mm larger than those of the substrate. A pressure on a bottom silicon nitride substrate was 300 Pa. The support block was made of silicon nitride, with a size of 10 mm × 10 mm × 7.8 mm. A composition of a sintering aid of the support blocks was 5% yttrium oxide (by mass percentage relative to a total mass of the silicon nitride support blocks) and 5% aluminum oxide (by mass percentage relative to the total mass of the silicon nitride support blocks), a molding process was dry pressing, and the molding was conducted at a pressure of 50 MPa.

[0034] The silicon nitride substrate was sintered by heating to a temperature of 1,900° C at a heating rate of 0.1° C / min to 10° C / min, and then holding at the above temperature for 6 h to obtain a sintered silicon nitride substrate. 1) A warping degree of the sintered silicon nitride substrate was measured according to the method of Example 1. The warping degree of the sintered silicon nitride substrate was 0.6 µm / mm. 2) A temperature at which the linear shrinkage rate was 5% was specified as the shrinkage starting temperature. The sintering linear shrinkage curves of the support block and the substrate were measured by a high-temperature thermal expansion instrument, and the results are shown in FIG. 3. The silicon nitride substrate has a shrinkage starting temperature of 1,500° C and a linear shrinkage rate of 17.2% in the height direction; and the support block has a shrinkage starting temperature of 1,450° C and a linear shrinkage rate of 20.5% in the height direction. The support block has a lower shrinkage starting temperature than that of the substrate, and a higher linear shrinkage rate in the height direction than that of the substrate, thereby realizing a dynamic process from non-contact to contact during the sintering. Comparative Example 1

[0035] Arranged as shown in FIG. 2: a size of the aluminium nitride substrate was 300 mm × 300 mm × 1.5 mm, and a weight of a single aluminium nitride substrate was 145 kg. Aluminium nitride substrates were laminated in a lamination layer number of 1. A composition of a sintering aid of the aluminum nitride substrates was 5% yttrium oxide (by mass percentage relative to a total mass of the aluminum nitride substrates), and a molding process was tape casting. The pressing plate was made of boron nitride with a weight of 800 g. A spacing distance between the pressing plate and the nitride ceramic substrate was 0.03 mm. A length and a width of the pressing plate both were 40 mm greater than those of the substrate. The support block was made of aluminum nitride with a size of 20 mm × 20 mm × 1.52 mm. A composition of a sintering aid of the support blocks was 10% neodymium oxide (by mass percentage relative to a total mass of the aluminum nitride support blocks), and a molding process was dry pressing, and the molding was conducted at a pressure of 20 MPa.

[0036] The aluminum nitride substrate was sintered by heating to a temperature of 1,850° C at a heating rate of 0.1° C / min to 10° C / min, and then holding at the above temperature for 3 h to obtain a sintered aluminum nitride substrate. 1) A warping degree of the sintered silicon nitride substrate was measured according to the method of Example 1. The warping degree of the sintered silicon nitride substrate was 0.8 µm / mm. 2) A temperature at which the linear shrinkage rate was 5% was specified as the shrinkage starting temperature. The sintering linear shrinkage curves of the support block and the substrate were measured by a high-temperature thermal expansion instrument, and the results are shown in FIG. 4. As shown in FIG. 4, aluminum nitride substrate has a shrinkage starting temperature of 1,500° C and a linear shrinkage rate of 19.8% in the height direction; and the support block has a shrinkage starting temperature of 1,600° C and a linear shrinkage rate of 21.9% in the height direction. The support block has a greater shrinkage starting temperature than that of the substrate, and a higher linear shrinkage rate in the height direction than that of the substrate, thereby realizing a dynamic process of the pressing plate and substrate from non-contact to contact during the sintering.

Claims

1. A dynamic sintering method for a nitride ceramic substrate, comprising the following steps: arranging the nitride ceramic substrate between n support blocks (3) with a same height in a non-contact manner, and placing a pressing plate (2) above the n support blocks (3) with the same height; wherein n is not less than 2; the pressing plate (2) and the nitride ceramic substrate (4) are arranged in parallel, and a spacing distance between the pressing plate (2) and the nitride ceramic substrate (4) is in a range of 0.01 mm to 1 mm; and a length of the pressing plate (2) is greater than a length of the nitride ceramic substrate (4), and a width of the pressing plate (2) is greater than a width of the nitride ceramic substrate (4); and adjusting a composition of a sintering aid of the support blocks (3) and / or a molding pressure of the support blocks (3), such that a shrinkage starting temperature of the support blocks (3) is less than a shrinkage starting temperature of the nitride ceramic substrate (4), and a linear shrinkage rate of the support blocks (3) in a height direction is greater than a linear shrinkage rate of the nitride ceramic substrate (4) in a height direction, wherein the shrinkage starting temperature of the support blocks (3) is in a range of 1,300° C to 1,700° C; and the linear shrinkage rate of the support blocks (3) in the height direction is in a range of 16% to 24%, and wherein a difference between the shrinkage starting temperature of the support blocks (3) and the shrinkage starting temperature of the nitride ceramic substrate (4) is in a range of 30° C to 100° C; and a difference between the linear shrinkage rate of the support blocks (3) in the height direction and the linear shrinkage rate of the nitride ceramic substrate (4) in the height direction is in a range of 0.2% to 6%; and subjecting a resulting system to sintering to obtain a sintered nitride ceramic substrate; wherein the sintering is conducted as follow: heating the resulting system to a temperature of 1,700 ° C to 2,000 ° C at a heating rate of 0.1 ° C / min to 10° C / min, and holding at the temperature for 1 h to 12 h, wherein the shrinkage starting temperature is a temperature at which the linear shrinkage rate in the height direction is 5%, the shrinkage starting temperature and the linear shrinkage rate in the height direction of the support blocks (3) are obtained from sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4), and the sintering shrinkage curves of the support blocks (3) and the nitride ceramic substrate (4) are measured by a high-temperature thermal expansion instrument.

2. The dynamic sintering method of claim 1, wherein the nitride ceramic substrate (4) is selected from the group consisting of a silicon nitride substrate and an aluminum nitride substrate; and a molding process of the nitride ceramic substrate (4) is selected from the group consisting of tape casting, dry pressing, gel casting, and dough rolling.

3. The dynamic sintering method of claim 1 or 2, wherein the nitride ceramic substrate (4) has a thickness of 0.2 mm to 2.0 mm, a length of not more than 300 mm, and a width of not more than 300 mm.

4. The dynamic sintering method of claim 3, wherein the nitride ceramic substrate (4) has a thickness of 0.5 mm to 1.5 mm, a length of 150 mm, and a width of 150 mm.

5. The dynamic sintering method of claim 3, wherein the nitride ceramic substrate (4) is in a number of not less than 1; and under the condition that the nitride ceramic substrate (4) is in a number of greater than 1, a plurality of nitride ceramic substrates (4) are laminated in a lamination layer number of not more than 30; adjacent nitride ceramic substrates (4) are separated by a boron nitride isolation powder layer; and boron nitride isolation powder layers in different layers independently have a thickness of 20 µm to 300 µm.

6. The dynamic sintering method of claim 5, wherein under the condition of the nitride ceramic substrate (4) is in a number of greater than 1, the plurality of the nitride ceramic substrates (4) are laminated in the lamination layer number of 5 to 20, and the boron nitride isolation powder layers in different layers independently have a thickness of 50 µm to 200 µm.

7. The dynamic sintering method of claim 5 or 6, wherein a weight of the pressing plate is calculated as W=P×S / 9.8-(N-1)×W1, wherein P represents a pressure of a bottom nitride ceramic substrate (4), and P is 30 Pa to 500 Pa; S represents an area of thrust surface of the nitride ceramic substrate (4), in m2; N represents a lamination layer number of the nitride ceramic substrate (4), and N is 1 to 30; and W1 represents a weight of a single nitride ceramic substrate (4), in kg.

8. The dynamic sintering method of claim 1 or 7, wherein the spacing distance between the pressing plate (2) and the nitride ceramic substrate (4) is in a range of 0.02 mm to 0.03 mm.

9. The dynamic sintering method of claim 1 or 7, wherein a difference between the length of the pressing plate (2) and the length of the nitride ceramic substrate (4) is not less than 10 mm; and a difference between the width of the pressing plate (2) and the width of the nitride ceramic substrate (4) is not less than 10 mm.

10. The dynamic sintering method of claim 1, wherein a material of the support blocks (3) is the same as a material of the nitride ceramic substrate (4); and a molding process of the support blocks (3) is selected from the group consisting of dry pressing and cold isostatic pressing, an upper surface and a lower surface of each of the support blocks (3) are parallel, and each of the support blocks (3) has a cross-sectional area of not less than 30 mm2.

11. The dynamic sintering method of claim 1, wherein the shrinkage starting temperature of the support blocks (3) is in a range of 1,450° C to 1,600° C.

12. The dynamic sintering method of claim 1 or 11, wherein a difference between the shrinkage starting temperature of the support blocks (3) and the shrinkage starting temperature of the nitride ceramic substrate (4) is in a range of 50° C to 80° C.

13. The dynamic sintering method of claim 1 or 11, wherein the sintering is conducted at a heating rate of 1° C / min to 5° C / min; the sintering is conducted at a temperature of 1,850° C to 1,900° C; and the holding at the temperature is conducted for 3 h to 6 h.