Reinforced switch device and method for manufacturing same

Abstract

The present invention discloses an enhancement-mode device and a method for manufacturing the same, which solve the problems of complicated manufacturing process and low stability and reliability of the traditional enhancement-mode devices. The enhancement-mode device includes: a substrate (1); a channel layer (23) and a barrier layer (24) successively formed on the substrate (1); an n-type semiconductor layer (3) formed on the barrier layer (24), a gate region being defined on a surface of the n-type semiconductor layer (3); a groove (4) that is formed in the gate region and at least partially runs through the n-type semiconductor layer (3); and a p-type conductor material (5) that is formed on the surface of the n-type semiconductor layer (3) and at least fills the inside of the groove (4).

Description

TECHNICAL FIELD

[0001] The present invention relates to the microelectronic technology, in particular to an enhancement-mode device and a method for manufacturing the same.BACKGROUND

[0002] High Electron Mobility Transistors (HEMTs) are one type of heterojunction field effect transistors. By taking an AlGaN / GaN heterojunction structure as an example, due to the presence of strong two-dimensional electron gas in the AlGaN / GaN heterojunction structure, AlGaN / GaN HEMTs are usually depletion devices, so that it is difficult to realize enhanced devices. However, in many cases, the application of the depletion devices is limited to a certain extent. For example, in the application of power switching devices, enhancement-mode (normally-closed) devices are required. Enhancement-mode GaN devices are mainly applied to high-frequency devices, the power switching devices, digital circuits, etc. It is of great significance to study the enhancement-mode GaN devices.

[0003] To realize enhancement-mode GaN devices, an appropriate method is required to reduce channel carrier concentration below a gate at a zero gate voltage. Currently reported methods include: etching a groove gate, injecting fluorine into a barrier layer below the gate, thinning the barrier layer, forming a p-type semiconductor material in a groove region of the gate, etc. However, these known methods have many disadvantages.

[0004] Etching the groove gate is a slight alteration to a structure of conventional depletion AlGaN / GaN HEMT devices. Instead of forming the gate by direct electron beam evaporation, a groove is etched in a pre-deposited gate region, a Schottky gate is then fabricated on a window of a concave gate, and the density of the electron gas in a channel is reduced by reducing a thickness of the barrier layer. To pinch off the channel at the zero gate voltage, the thickness of the barrier layer has to be reduced to below 5 nm. Thus, no effective quantum restriction can be generated at a positive gate voltage and no surface trap can be thus formed. As a result, the channel cannot be completely opened at the positive gate voltage, and electrons in the surface trap also increase leakage current of the gate. The method for etching the groove gate was proposed by Kumar et al. from the University of Illinois in 2001, see Kumar, V., et al.: "Recessed 0.25 mm gate AlGaN / GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE", Electron. Lett.2001, 37, pp. 1483-1485.

[0005] Injecting the fluorine into the barrier layer below the gate is injecting negatively-charged ions such as fluorine ions into the barrier layer. A two-dimensional electron gas in a conductive channel may be depleted by controlling the concentration of injected ions, but the channel must be pinched off by very strong anions, so that the current at the time when the channel is opened is reduced. In 2005, Y. Cai et al. from Hong Kong University of Science and Technology successfully developed high-performance AlGaN / GaN HEMTs by a fluoride-based plasma treatment technology, see Y. Cai et al., "High-performance enhancement-mode AlGaN / GaN HEMTs using fluoride-based plasma treatment", IEEE Electron Lett., vol.2, no.7, pp.435-437,2005.

[0006] Thinning the barrier layer is to reduce the density of the two-dimensional electron gas in the channel by a method of using a thin AlGaN barrier layer. Akira ENDOH et al. from the Osaka University prepared the enhanced devices by this method, where a threshold voltage was zero volts, see Akira ENDOH _et al., "Non-Recessed-Gate Enhancement-Mode AlGaN / GaN High Electron Mobility Transistors with High RF Performance", JJAP, Vol.43, No.4B, 2004, pp.2255-2258.

[0007] All the methods described above belong to technology of Schottky gate field effect transistor, and the threshold voltage is generally about 0V to 1V, which does not reach an applied threshold voltage of 3V to 5V. Compared with metal insulated gate field effect transistors, the leakage current of the gate is relatively high. Moreover, both methods, i.e., etching the gate groove and injecting the fluorine into the barrier layer below the gate, use the plasma technology. By the plasma technology, a lattice structure may be damaged, an active region of the device may also be damaged, and the repetition controllability of the process is low. Thus, the stability and reliability of the device are affected.

[0008] Patent document No. US2009 / 0146182 discloses a nitride semiconductor device that includes a substrate; a first nitride semiconductor layer formed on the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a band gap energy larger than that of the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and having an opening; a p-type fourth nitride semiconductor layer filling the opening; and a gate electrode formed on the fourth nitride semiconductor layer. Patent document No. US2015 / 0097194 discloses an enhancement-mode device that includes a substrate, an epitaxial multilayer structure formed on the substrate, and a gate region formed on the epitaxial multilayer structure, wherein: the epitaxial multilayer structure sequentially comprises from the substrate: a nucleation layer, a buffer layer, a heterojunction structure layer, a second gallium nitride layer, a nitride transition layer and a dielectric layer, wherein the heterojunction structure layer comprises a gallium nitride channel layer and a barrier layer which has a sandwich structure, and a middle layer of the sandwich structure is a first gallium nitride layer; and the gate region comprises a gate metal layer and a p-type nitride layer located under the gate metal layer, wherein the p-type nitride layer is embedded into the epitaxial multilayer structure, a bottom of the p-type nitride layer is in contact with the first gallium nitride layer of the sandwich structure, and a top of the p-type nitride layer is not higher than the nitride transition layer.

[0009] US2012 / 0112202 discloses an E-mode HEMT in which the barrier layer may be an AlGaN double layer including a lower layer and an upper layer in regions except for a gate electrode region. The Al content of the lower layer may be different from the Al content of the upper layer. A depletion layer, which may be a p-doped layer, is formed on the barrier layer inside and outside of the gate electrode region.

[0010] Forming the p-type semiconductor material in the groove region of the gate requires selective etching of all regions except for a region blow the gate. However, it is very difficult to control the precise process for thickness etching, defects caused during etching may lead to a serious current collapse effect, and the stability and reliability of the device may also be affected.SUMMARY

[0011] The invention is as defined in the appended set of claims.BRIEF DESCRIPTION OF DRAWINGS

[0012] In the following, the term "example" is to be understood as referring to unclaimed subject-matter. FIG. 1 to FIG. 4, FIG. 5, FIG. 5', FIG. 5", FIG. 6 and FIG. 6' are exploded views of a structure of an enhancement-mode device during a preparation process according to an example. FIG. 7a and FIG. 7b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to an example. FIG. 8a and FIG. 8b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to another example. FIG. 9a and FIG. 9b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to still another example. FIG. 10a to FIG. 10c are schematic structural diagrams of an enhancement-mode device according to an embodiment of the present invention (Fig. 10a), and to two unclaimed examples (Figs. 10b-c), respectively. FIG. 11 is an energy band diagram of an enhancement-mode device in an operating state according to an example. FIG. 12 is a schematic flowchart of a process of manufacturing an enhancement-mode device according to an example. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0013] The present invention will be described below in detail by specific implementations with reference to the accompanying drawings. However, these implementations do not constitute any limitations to the present invention, and all structural, methodological or functional alterations made by a person of ordinary skill in the art according to these implementations shall fall into the protection scope of the present invention.

[0014] Additionally, repetitive numbers or marks may be used in different embodiments. These repetitions are merely for briefly and clearly describing the present invention, and do not represent any correlation between different embodiments and / or structures to be discussed.

[0015] FIG. 5 shows a schematic structural diagram of an enhancement-mode device according to an example. As shown in FIG. 5, the enhancement-mode device includes: a substrate 1; a channel layer 23 and a barrier layer 24 both formed on the substrate 1; an n-type semiconductor layer 3 formed on the barrier layer 24, a gate region being defined on a surface of the n-type semiconductor layer 3; a groove 4 formed in the gate region of the n-type semiconductor layer 3 (as shown in FIG. 4); and a p-type semiconductor material 5 that is formed on the surface of the n-type semiconductor layer 3 and fills the inside of the groove 4.

[0016] In an embodiment of the present invention, the substrate 1 may be selected from a semiconductor material, a ceramic material, a high polymer material and the like. For example, the substrate 1 may be selected from sapphire, silicon carbide, silicon, lithium niobate, Silicon-on-Insulator (SOI), gallium nitride or aluminum nitride. The channel layer 23 and the barrier layer 24 are made of semiconductor materials capable of forming a two-dimensional electron gas. Taking the GaN-based material of the present invention, the channel layer 23 may be made of GaN, the barrier layer 24 may be made of AlGaN, and the channel layer 23 and the barrier layer 24 form a heterogeneous structure, so as to form the two-dimensional electron gas. Of course, the channel layer 23 and the barrier layer 24 may also be made of other materials. When by taking a based material as an unclaimed example, the channel layer 23 is made of GaAs, and the barrier layer 24 is made of AlGaAs.

[0017] In a further embodiment of the present invention, in order to improve the performance of the device and satisfy the related technical requirements, epitaxial layers such as a nucleating layer 21 and a buffer layer 22 may be further formed between the substrate 1 and the channel layer 23.By taking a GaN-based enhancement-mode device as an example, in order to satisfy the technical requirements of reducing the dislocation density and the defect density, avoiding meltback and improving the crystal quality, the GaN-based enhancement-mode device may further include a nucleating layer 21 formed above the substrate 1. The nucleating layer 21 may be made of one or more of AlN and AlGaN. Additionally, in order to buffer the stress in the epitaxial layer above the substrate and avoid the cracking of the epitaxial layer, the GaN-based enhancement-mode device may further include a buffer layer 22 formed above the nucleating layer 21. The buffer layer 22 may be made of one or more of GaN, AlGaN and AlInGaN.

[0018] According to the invention, as shown in FIG. 5', the barrier layer 24 is of a sandwich structure. The sandwich structure includes a first outer interlayer 241 formed on a surface of the channel layer 23, a second outer interlayer 243, and a middle layer 242 sandwiched between the first outer interlayer 241 and the second outer interlayer 243. It should be understood that the material of the first outer interlayer 241, the middle layer 242 and the second outer interlayer 243 may be adjusted according to the material of the channel layer 23. Taking the GaN-based material of the present invention, when the channel layer 23 is made of GaN, the first outer interlayer 241 and the second outer interlayer 243 may be made of AlGaN or AlInGaN, and the middle layer 242 may be made of GaN, where a content of each of Al, In and Ga may vary from 0 to 1. However, the material of the first outer interlayer 241, the middle layer 242 and the second outer interlayer 243 will not be specifically limited in the present invention.

[0019] In an embodiment of the present invention, corresponding semiconductor materials may be selected for the n-type semiconductor layer 3 and the p-type semiconductor material 5 according to the material of the channel layer 23 and the barrier layer 24. Taking the GaN-based enhancement-mode device of the present invention, the material of the n-type semiconductor layer 3 may be selected from one or more of the following: n-type GaN, n-type AlGaN and n-type AlInGaN, and the p-type semiconductor material 5 may be selected from one or more of the following: p-type diamond, p-type NiO, p-type GaN and p-type polycrystalline GaN.

[0020] It should be understood that a doping mode for the n-type semiconductor layer 3 may be selected from one of the following: uniform doping, modulation doping and delta doping. In this embodiment, the doping mode for the n-type semiconductor layer 3 will also not be specifically limited.

[0021] It should be understood that the specific shape of the p-type semiconductor material 5 may vary in accordance with a width of the groove 4 in the gate region. Although, in a structure shown in FIG. 5, a middle portion of the p-type semiconductor material 5 is recessed to form a T-shaped structure, when the width of the groove 4 is relatively small (e.g., less than 0.25 µm), the middle portion of the p-type semiconductor material 5 may also be in a folded state, which will not be limited in the present invention.

[0022] It can be known that, by forming the n-type semiconductor layer 3 on the barrier layer 24, forming the groove 4 in the gate region of the n-type semiconductor layer 3 and forming the p-type semiconductor material 5 in the groove 4, the purposes of pinching off a n-type conductive layer below a gate may be achieved to realize the enhancement-mode device. More importantly, since the n-type semiconductor layer 3 may perform electron compensation on the channel layer 23, the influence of a surface state on the two-dimensional electron gas is avoided. Therefore, the requirement of turning on the device can still be satisfied without selective etching of all portions of the p-type semiconductor material except for the gate region. Consequently, the process difficulty is reduced, and the stability and reliability of the device are improved. Meanwhile, the n-type semiconductor layer 3 may also protect the semiconductor structure in a lower layer. During the etching of the p-type semiconductor material 5, it is unnecessary to strictly control an etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter, thus, the step of passivating the barrier layer 24 in the prior art is omitted, and the process flow becomes relatively simple.

[0023] It should be understood that, although it is shown in FIG. 5 that the groove 4 completely runs through the n-type semiconductor layer 3 and rests on a bottom surface of the n-type semiconductor layer 3, in other embodiments of the present invention, it is also possible that the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. For example, as shown in FIG. 5', when the barrier layer 24 is of the sandwich structure, the groove 4 may run through the middle layer 242 in the sandwich structure of the barrier layer 24. In this case, the middle layer 242 may function as a stop layer in the local etching process of the groove 4 so as to protect the first outer interlayer 241 on the surface of the channel layer 23 from being damaged by the local etching process. In another embodiment of the present invention, as shown in FIG. 5", the groove 4 may also partially run through the n-type semiconductor layer 3, and the bottom surface of the groove 4 rests the inside of the n-type semiconductor layer 3. A depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate to realize the enhancement-mode device.

[0024] In an example, as shown in FIG. 6, a source region and a drain region located on two sides of the gate region are further defined on the surface of the barrier layer 24, a source electrode 6 is formed in the source region and in ohmic contact with the barrier layer 24, and a drain electrode 7 is formed in the drain region and in ohmic contact with the barrier layer 24. The p-type semiconductor material 5 may be directly used as a gate electrode (as shown in FIG. 6), or an electrode material 51 may also be fabricated on the p-type semiconductor material 5 to serve as a gate electrode (as shown in FIG. 6'). It should also be understood that, the source electrode 6, the drain electrode 7 and the electrode material 51 on the p-type semiconductor material 5 may be made of a metal material, for example nickel alloy, or may be made of a metal oxide or semiconductor material. In the present invention, the specific material used for preparing the source electrode 6, the source electrode 7 and the electrode material 51 on the p-type semiconductor material 5 will not be limited.

[0025] Specifically, based on the device structure shown in FIG. 5, before the source electrode 6 and the drain electrode 7 are fabricated, it is necessary to etch the p-type semiconductor material 5 and the n-type semiconductor layer 3 above the source region and the drain region to expose the source region and the drain region on the surface of the barrier layer 24 so as to fabricate the source electrode 6 and the drain electrode 7, so the device structure shown in FIG. 6 is finally formed. In this case, the p-type semiconductor material 5 merely covers the surface of the n-type semiconductor layer 3 between source region and the gate region in a horizontal direction, the surface of the n-type semiconductor layer 3 between the drain region and the gate region in the horizontal direction and the inside of the groove 4, i.e., a final shape of the p-type semiconductor material 5 covers all surfaces of the n-type semiconductor layer 3 except for the surface above the source region and the drain region.

[0026] However, it should be understood that, since the enhancement-mode device can be realized as long as the p-type semiconductor material 5 can pinch off the n-type conductive layer below the gate region, the p-type semiconductor material 5 may also be in other final shapes as long as the p-type semiconductor material 5 is reserved in the groove 4 in the gate region. In the present invention, it is only limited that at least the groove 4 in the gate region is filled with the p-type semiconductor material 5, but for other regions except for the gate region, the p-type semiconductor material may be selectively formed according to the process and design requirements. The shape of a portion of the p-type semiconductor material except for the gate region will not be limited in the present invention.

[0027] For example, the final shape of the p-type semiconductor material 5 may at least include the following situations.

[0028] As shown in FIG. 7a, the p-type semiconductor material 5 may be formed only in the gate region; and after the source electrode 6 and the drain electrode 7 are prepared, the p-type semiconductor material 5 is still formed only in the gate region, as show in FIG. 7b.

[0029] As shown in FIG. 8a, in addition to being formed in the gate region, the p-type semiconductor material 5 may also cover the surface of the n-type semiconductor layer 3 on one side of the gate region close to the source region in the horizontal direction; and after the source electrode 6 and the drain electrode 7 are prepared, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 between the source region and the gate region in the horizontal direction, as shown in FIG. 8b.

[0030] As shown in FIG. 9a, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 on one side of the gate region close to the drain region in the horizontal direction; and after the source electrode 6 and the drain electrode 7 are prepared, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 between the drain region and the gate region in the horizontal direction, as shown in FIG. 9b.

[0031] As shown in FIG. 10a, in an embodiment of the present invention, in order to further protect the semiconductor structure in the lower layer, passivate the surface of the n-type semiconductor layer 3 and improve the dynamic characteristics, the enhancement-mode device further includes a first semiconductor layer 81 formed between the n-type semiconductor layer 3 and the p-type semiconductor material 5, and a second semiconductor layer 82 formed between the barrier layer 24 and the n-type semiconductor layer 3. Specifically, the first semiconductor layer 81 is first deposited on the surface of the n-type semiconductor layer 3 and the groove 4 is then formed in the gate region. The groove 4 needs to completely run through the first semiconductor layer 81; and if the groove 4 does not completely run through the first semiconductor layer 81, the groove 4 cannot at least partially run through the n-type semiconductor layer 3. The second semiconductor layer 82 is deposited on the surface of the barrier layer 24 before the n-type semiconductor layer 3 is prepared on the barrier layer 24; and then the n-type semiconductor layer 3 is prepared on a surface of the second semiconductor layer 82. However, it should be understood that, in examples not covered by the claims, the enhancement-mode device may include only the first semiconductor layer 81 (as shown in FIG. 10b) or only the second semiconductor layer 82 (as shown in FIG. 10c) according to the actual design requirements.

[0032] It should be understood that, although it is shown in FIG. 10a and FIG. 10c that the groove 4 runs through the n-type semiconductor layer 3 and the second semiconductor layer 82 and it is shown in FIG. 10b that the groove 4 runs through the n-type semiconductor layer 3, in other embodiments of the present invention, the groove 4 may partially run through the n-type semiconductor layer 3; or the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate so as to realize the enhancement-mode device.

[0033] According to the present invention, both the first semiconductor layer 81 and the second semiconductor layer 82 are on-doped semiconductor layers, and are made of the same material as the n-type semiconductor layer 3. By taking the GaN-based enhancement-mode device of the present invention, the first semiconductor layer 81 and the second semiconductor later 82 may be made of, for example, non-doped GaN.

[0034] In an unclaimed example, by taking a GaN-based enhancement-mode device including only a first semiconductor layer 81, when the channel layer 23 is of a periodic structure having a thickness of 15 nm and being made of Al 0.15 GaN / GaN, and if an n-type GaN layer having a thickness of 20 nm is prepared above the channel layer 23 (the doping concentration of Si is 2.5E18 / cm 3< ) and an non-doped GaN layer having a thickness of 100 nm and a p-type GaN layer having a thickness of 60 nm are successively prepared above the n-type GaN layer (the doping concentration of Mg is 3E19 / cm 3< ), an energy band diagram of the formed enhancement-mode device may be shown in FIG. 11. It can be known from the energy band diagram that the enhancement-mode device is perfectly realized in the present invention. However, it should be understood that the parameters such as thickness and concentration in this embodiment may be determined according to the design requirements and will not be specifically limited in the present invention.

[0035] FIG. 12 is a schematic flowchart of a method for manufacturing an enhancement-mode device according to an example. As shown in FIG. 12, the method for manufacturing the enhancement-mode device includes the following steps.

[0036] Step 1201: As shown in FIG. 1, providing a substrate 1. The substrate 1 may be selected from a semiconductor material, a ceramic material, a high polymer material and the like. For example, the substrate 1 is preferably selected from sapphire, silicon carbide, silicon, lithium niobate, Silicon-on-Insulator (SOI), gallium nitride or aluminum nitride.

[0037] Step 1202: As shown in FIG. 2, growing a channel layer 23 and a barrier layer 24 successively on the substrate 1. In an embodiment of the present invention, before the growth of the channel layer 23, a nucleating layer 21 and a buffer layer 22 may be successively grown on the substrate 1. The respective functions and constituents of the nucleating layer 21, the buffer layer 22, the channel layer 23 and the barrier layer 24 have been described above and will not be repeated herein again.

[0038] Step 1203: As shown in FIG. 3, forming an n-type semiconductor layer 3 on the barrier layer 24, a gate region being defined on a surface of the n-type semiconductor layer 3. By taking a GaN-based enhancement-mode device as an example, the material of the n-type semiconductor layer may be selected from one or more of the following: n-type GaN, n-type AlGaN and n-type AlInGaN. The n-type semiconductor layer 3 may grow in situ, or may be prepared by Atomic layer deposition (ALD), Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), Metal-Organic Chemical Vapor Deposition (MOCVD) or combinations thereof. It should be understood that the methods for forming the n-type semiconductor layer 3 described herein are merely exemplary, and in the present invention, the n-type semiconductor layer 3 may be formed by any method known to those skilled in the art.

[0039] Step 1204: As shown in FIG. 4, forming, in the gate region of the n-type semiconductor layer 3, a groove 4 extending towards the barrier layer 24. In an embodiment of the present invention, the etching process may be, for example, chlorine-based plasma etching. Due to the selectivity of the fluorine-based plasma etching, the etching process may stop when etching is carried out to the barrier layer 24, thereby forming the groove 4.

[0040] Step 1205: As shown in FIG. 5, forming, on the surface of the n-type semiconductor layer 3, a p-type semiconductor material 5 that fills the inside of the groove 4. For example, the p-type semiconductor material 5 may be selected from p-type diamond, p-type NiO, p-type GaN, p-type polycrystalline GaN or the like.

[0041] It should be understood that, although it is shown in FIG. 5 that the groove 4 completely runs through the n-type semiconductor layer 3 and rests on the bottom surface of the n-type semiconductor layer 3, in other embodiments of the present invention, it is also possible that the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. For example, as shown in FIG. 5', when the barrier layer 24 is of a sandwich structure, the groove 4 may run through the middle layer 242 in the sandwich structure of the barrier layer 24. In this case, the middle layer 242 can function as a stop layer in the local etching process of the groove 4, so as to protect the first outer interlayer on the surface of the channel layer 23 from being damaged by the local etching process. In another embodiment of the present invention, as shown in FIG. 5", the groove 4 may also partially run through the n-type semiconductor layer 3, and the bottom surface of the groove 4 rests the inside of the n-type semiconductor layer 3. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductor layer below the gate so as to realize the enhancement-mode device.

[0042] Step 1206: As shown in FIG. 6, etching away a semiconductor structure above the source region to expose the barrier layer 24, and preparing, in the source region, a source electrode 6 in ohmic contact with the barrier layer 24; and etching away a semiconductor structure above the drain region to expose the barrier layer 24, and preparing, in the drain region, a drain electrode 7 in ohmic contact with the barrier layer 24.

[0043] The p-type semiconductor material 5 may be directly used as a gate electrode (as shown in FIG. 6), or an electrode material 51 may further be fabricated on the p-type semiconductor material 5 to serve as a gate electrode (as shown in FIG. 6'). It should also be understood that, the source electrode 6, the drain electrode 7 and the electrode material 51 on the p-type semiconductor material 5 may be made of a metal material, for example nickel alloy, or may be made of a metal oxide or semiconductor material. In the present invention, the specific material used for preparing the source electrode 6, the source electrode 7 and the electrode material 51 on the p-type semiconductor material 5 will not be limited.

[0044] It should be understood that, since the enhancement-mode device can be realized as long as the p-type semiconductor material 5 can pinch off the n-type conductive layer below the gate region, the p-type semiconductor material 5 may also be in other final shapes as long as the p-type semiconductor material 5 is reserved in the groove 4 in the gate region. In the present invention, it is only limited that at least the groove 4 in the gate region is filled with the p-type semiconductor material 5, but for other regions except for the gate region, the p-type semiconductor material may be selectively formed according to the process and design requirements. The shape of a portion of the p-type semiconductor material except for the gate region will not be limited in the present invention.

[0045] In an embodiment of the present invention, the step of preparing the p-type semiconductor material 5 may include the following steps. The p-type semiconductor material 5 is first prepared on the n-type semiconductor layer 3 (e.g., by epitaxial growth), the p-type semiconductor material 5 is formed on the surface of the n-type semiconductor layer 3 and fills the inside of the groove 4, as shown in FIG. 5. Then, according to the design requirements, it is determined whether and how to etch the p-type semiconductor material 5, as long as at least the p-type semiconductor material 5 in the gate region is reserved (as shown in FIG. 7a, FIG. 8a and FIG. 9a) so as to pinch off the n-type conductive layer below the gate. Corresponding to FIG. 7a, FIG. 8a and FIG. 9a, the device structure may be separately shown in FIG. 7a, FIG. 8b and FIG. 9b after the source electrode 6 and the drain electrode 7 are prepared, and will not be repeated herein again.

[0046] It should be understood that, since the n-type semiconductor layer 3 can protect the semiconductor structure in the lower layer, during the process of etching the p-type semiconductor material 5, it is unnecessary to accurately control the etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter. It can be known that, by introducing the n-type semiconductor layer 3, the process difficulty in the etching process of the p-type semiconductor material 5 is reduced.

[0047] In an embodiment of the present invention, before the groove 4 is formed, the first semiconductor layer 81 is deposited on the surface of the n-type semiconductor layer 3, and the groove 4 is then formed in the gate region; and, before the n-type semiconductor layer 3 is formed on the barrier layer 24, the second semiconductor layer 82 is deposited on the surface of the barrier layer 24. The formed device structure may be shown in FIG. 10a to FIG. 10c. Both the first semiconductor layer 81 and the second semiconductor layer 82 are non-doped semiconductor layers, for example, non-doped GaN, to further protect the semiconductor structure in the lower layer, passivate the surface of the n-type semiconductor layer 3 and improve the dynamic characteristics.

[0048] It should be understood that, although it is shown in FIG. 10a and FIG. 10c that the groove 4 runs through the n-type semiconductor layer 3 and the second semiconductor layer 82 and it is shown in FIG. 10b that the groove 4 runs through the n-type semiconductor layer 3, in other embodiments of the present invention, the groove 4 may partially run through the n-type semiconductor layer 3; or the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate so as to realize the enhancement-mode device.

[0049] With regard to the enhancement-mode device prepared by the method for manufacturing an enhancement-mode device provided in the embodiments of the present invention, by forming the n-type semiconductor layer 3 on the barrier layer 24, forming the groove structure in the gate region of the n-type semiconductor layer 3 and forming the p-type semiconductor material 5 in the groove 4, the purposes of pinching off the n-type conductive layer below the gate may be achieved to realize the enhancement-mode device . More importantly, since the n-type semiconductor layer may perform electron compensation on the channel layer, the influence of a surface state on a two-dimensional electron gas is avoided. Therefore, the requirement of turning on the device can still be satisfied without selective etching of all portions of the p-type semiconductor material except for the gate region. Consequently, the process difficulty is reduced, and the stability and reliability of the device are improved. Meanwhile, the n-type semiconductor layer 3 may also protect the semiconductor structure in a lower layer. During the etching of the p-type semiconductor material 5, it is unnecessary to strictly control the etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter, thus, the step of passivating the barrier layer 24 in the prior art is omitted, and the process flow becomes relatively simple.

[0050] It should be understood that, although this specification has been described by implementations, not every implementation includes only one independent technical solution. The narration mode of this specification is merely for clarity, those skilled in the art shall regard this specification as a whole, and the technical solutions in various implementations may also be properly combined to form other implementations that may be understood by those skilled in the art. The series of detailed descriptions listed above are merely specific descriptions of feasible implementations and not intended to limit the protection scope of the present invention.

Examples

Embodiment Construction

[0013]The present invention will be described below in detail by specific implementations with reference to the accompanying drawings. However, these implementations do not constitute any limitations to the present invention, and all structural, methodological or functional alterations made by a person of ordinary skill in the art according to these implementations shall fall into the protection scope of the present invention.

[0014]Additionally, repetitive numbers or marks may be used in different embodiments. These repetitions are merely for briefly and clearly describing the present invention, and do not represent any correlation between different embodiments and / or structures to be discussed.

[0015]FIG. 5 shows a schematic structural diagram of an enhancement-mode device according to an example. As shown in FIG. 5, the enhancement-mode device includes: a substrate 1; a channel layer 23 and a barrier layer 24 both formed on the substrate 1; an n-type semiconductor layer 3 formed on...

TECHNICAL FIELD

[0001] The present invention relates to the microelectronic technology, in particular to an enhancement-mode device and a method for manufacturing the same.BACKGROUND

[0002] High Electron Mobility Transistors (HEMTs) are one type of heterojunction field effect transistors. By taking an AlGaN / GaN heterojunction structure as an example, due to the presence of strong two-dimensional electron gas in the AlGaN / GaN heterojunction structure, AlGaN / GaN HEMTs are usually depletion devices, so that it is difficult to realize enhanced devices. However, in many cases, the application of the depletion devices is limited to a certain extent. For example, in the application of power switching devices, enhancement-mode (normally-closed) devices are required. Enhancement-mode GaN devices are mainly applied to high-frequency devices, the power switching devices, digital circuits, etc. It is of great significance to study the enhancement-mode GaN devices.

[0003] To realize enhancement-mode GaN devices, an appropriate method is required to reduce channel carrier concentration below a gate at a zero gate voltage. Currently reported methods include: etching a groove gate, injecting fluorine into a barrier layer below the gate, thinning the barrier layer, forming a p-type semiconductor material in a groove region of the gate, etc. However, these known methods have many disadvantages.

[0004] Etching the groove gate is a slight alteration to a structure of conventional depletion AlGaN / GaN HEMT devices. Instead of forming the gate by direct electron beam evaporation, a groove is etched in a pre-deposited gate region, a Schottky gate is then fabricated on a window of a concave gate, and the density of the electron gas in a channel is reduced by reducing a thickness of the barrier layer. To pinch off the channel at the zero gate voltage, the thickness of the barrier layer has to be reduced to below 5 nm. Thus, no effective quantum restriction can be generated at a positive gate voltage and no surface trap can be thus formed. As a result, the channel cannot be completely opened at the positive gate voltage, and electrons in the surface trap also increase leakage current of the gate. The method for etching the groove gate was proposed by Kumar et al. from the University of Illinois in 2001, see Kumar, V., et al.: "Recessed 0.25 mm gate AlGaN / GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE", Electron. Lett.2001, 37, pp. 1483-1485.

[0005] Injecting the fluorine into the barrier layer below the gate is injecting negatively-charged ions such as fluorine ions into the barrier layer. A two-dimensional electron gas in a conductive channel may be depleted by controlling the concentration of injected ions, but the channel must be pinched off by very strong anions, so that the current at the time when the channel is opened is reduced. In 2005, Y. Cai et al. from Hong Kong University of Science and Technology successfully developed high-performance AlGaN / GaN HEMTs by a fluoride-based plasma treatment technology, see Y. Cai et al., "High-performance enhancement-mode AlGaN / GaN HEMTs using fluoride-based plasma treatment", IEEE Electron Lett., vol.2, no.7, pp.435-437,2005.

[0006] Thinning the barrier layer is to reduce the density of the two-dimensional electron gas in the channel by a method of using a thin AlGaN barrier layer. Akira ENDOH et al. from the Osaka University prepared the enhanced devices by this method, where a threshold voltage was zero volts, see Akira ENDOH _et al., "Non-Recessed-Gate Enhancement-Mode AlGaN / GaN High Electron Mobility Transistors with High RF Performance", JJAP, Vol.43, No.4B, 2004, pp.2255-2258.

[0007] All the methods described above belong to technology of Schottky gate field effect transistor, and the threshold voltage is generally about 0V to 1V, which does not reach an applied threshold voltage of 3V to 5V. Compared with metal insulated gate field effect transistors, the leakage current of the gate is relatively high. Moreover, both methods, i.e., etching the gate groove and injecting the fluorine into the barrier layer below the gate, use the plasma technology. By the plasma technology, a lattice structure may be damaged, an active region of the device may also be damaged, and the repetition controllability of the process is low. Thus, the stability and reliability of the device are affected.

[0008] Patent document No. US2009 / 0146182 discloses a nitride semiconductor device that includes a substrate; a first nitride semiconductor layer formed on the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a band gap energy larger than that of the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and having an opening; a p-type fourth nitride semiconductor layer filling the opening; and a gate electrode formed on the fourth nitride semiconductor layer. Patent document No. US2015 / 0097194 discloses an enhancement-mode device that includes a substrate, an epitaxial multilayer structure formed on the substrate, and a gate region formed on the epitaxial multilayer structure, wherein: the epitaxial multilayer structure sequentially comprises from the substrate: a nucleation layer, a buffer layer, a heterojunction structure layer, a second gallium nitride layer, a nitride transition layer and a dielectric layer, wherein the heterojunction structure layer comprises a gallium nitride channel layer and a barrier layer which has a sandwich structure, and a middle layer of the sandwich structure is a first gallium nitride layer; and the gate region comprises a gate metal layer and a p-type nitride layer located under the gate metal layer, wherein the p-type nitride layer is embedded into the epitaxial multilayer structure, a bottom of the p-type nitride layer is in contact with the first gallium nitride layer of the sandwich structure, and a top of the p-type nitride layer is not higher than the nitride transition layer.

[0009] US2012 / 0112202 discloses an E-mode HEMT in which the barrier layer may be an AlGaN double layer including a lower layer and an upper layer in regions except for a gate electrode region. The Al content of the lower layer may be different from the Al content of the upper layer. A depletion layer, which may be a p-doped layer, is formed on the barrier layer inside and outside of the gate electrode region.

[0010] Forming the p-type semiconductor material in the groove region of the gate requires selective etching of all regions except for a region blow the gate. However, it is very difficult to control the precise process for thickness etching, defects caused during etching may lead to a serious current collapse effect, and the stability and reliability of the device may also be affected.SUMMARY

[0011] The invention is as defined in the appended set of claims.BRIEF DESCRIPTION OF DRAWINGS

[0012] In the following, the term "example" is to be understood as referring to unclaimed subject-matter. FIG. 1 to FIG. 4, FIG. 5, FIG. 5', FIG. 5", FIG. 6 and FIG. 6' are exploded views of a structure of an enhancement-mode device during a preparation process according to an example. FIG. 7a and FIG. 7b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to an example. FIG. 8a and FIG. 8b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to another example. FIG. 9a and FIG. 9b are exploded views of a structure of an enhancement-mode device during a process for preparing a source electrode and a drain electrode according to still another example. FIG. 10a to FIG. 10c are schematic structural diagrams of an enhancement-mode device according to an embodiment of the present invention (Fig. 10a), and to two unclaimed examples (Figs. 10b-c), respectively. FIG. 11 is an energy band diagram of an enhancement-mode device in an operating state according to an example. FIG. 12 is a schematic flowchart of a process of manufacturing an enhancement-mode device according to an example. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0013] The present invention will be described below in detail by specific implementations with reference to the accompanying drawings. However, these implementations do not constitute any limitations to the present invention, and all structural, methodological or functional alterations made by a person of ordinary skill in the art according to these implementations shall fall into the protection scope of the present invention.

[0014] Additionally, repetitive numbers or marks may be used in different embodiments. These repetitions are merely for briefly and clearly describing the present invention, and do not represent any correlation between different embodiments and / or structures to be discussed.

[0015] FIG. 5 shows a schematic structural diagram of an enhancement-mode device according to an example. As shown in FIG. 5, the enhancement-mode device includes: a substrate 1; a channel layer 23 and a barrier layer 24 both formed on the substrate 1; an n-type semiconductor layer 3 formed on the barrier layer 24, a gate region being defined on a surface of the n-type semiconductor layer 3; a groove 4 formed in the gate region of the n-type semiconductor layer 3 (as shown in FIG. 4); and a p-type semiconductor material 5 that is formed on the surface of the n-type semiconductor layer 3 and fills the inside of the groove 4.

[0016] In an embodiment of the present invention, the substrate 1 may be selected from a semiconductor material, a ceramic material, a high polymer material and the like. For example, the substrate 1 may be selected from sapphire, silicon carbide, silicon, lithium niobate, Silicon-on-Insulator (SOI), gallium nitride or aluminum nitride. The channel layer 23 and the barrier layer 24 are made of semiconductor materials capable of forming a two-dimensional electron gas. Taking the GaN-based material of the present invention, the channel layer 23 may be made of GaN, the barrier layer 24 may be made of AlGaN, and the channel layer 23 and the barrier layer 24 form a heterogeneous structure, so as to form the two-dimensional electron gas. Of course, the channel layer 23 and the barrier layer 24 may also be made of other materials. When by taking a based material as an unclaimed example, the channel layer 23 is made of GaAs, and the barrier layer 24 is made of AlGaAs.

[0017] In a further embodiment of the present invention, in order to improve the performance of the device and satisfy the related technical requirements, epitaxial layers such as a nucleating layer 21 and a buffer layer 22 may be further formed between the substrate 1 and the channel layer 23.By taking a GaN-based enhancement-mode device as an example, in order to satisfy the technical requirements of reducing the dislocation density and the defect density, avoiding meltback and improving the crystal quality, the GaN-based enhancement-mode device may further include a nucleating layer 21 formed above the substrate 1. The nucleating layer 21 may be made of one or more of AlN and AlGaN. Additionally, in order to buffer the stress in the epitaxial layer above the substrate and avoid the cracking of the epitaxial layer, the GaN-based enhancement-mode device may further include a buffer layer 22 formed above the nucleating layer 21. The buffer layer 22 may be made of one or more of GaN, AlGaN and AlInGaN.

[0018] According to the invention, as shown in FIG. 5', the barrier layer 24 is of a sandwich structure. The sandwich structure includes a first outer interlayer 241 formed on a surface of the channel layer 23, a second outer interlayer 243, and a middle layer 242 sandwiched between the first outer interlayer 241 and the second outer interlayer 243. It should be understood that the material of the first outer interlayer 241, the middle layer 242 and the second outer interlayer 243 may be adjusted according to the material of the channel layer 23. Taking the GaN-based material of the present invention, when the channel layer 23 is made of GaN, the first outer interlayer 241 and the second outer interlayer 243 may be made of AlGaN or AlInGaN, and the middle layer 242 may be made of GaN, where a content of each of Al, In and Ga may vary from 0 to 1. However, the material of the first outer interlayer 241, the middle layer 242 and the second outer interlayer 243 will not be specifically limited in the present invention.

[0019] In an embodiment of the present invention, corresponding semiconductor materials may be selected for the n-type semiconductor layer 3 and the p-type semiconductor material 5 according to the material of the channel layer 23 and the barrier layer 24. Taking the GaN-based enhancement-mode device of the present invention, the material of the n-type semiconductor layer 3 may be selected from one or more of the following: n-type GaN, n-type AlGaN and n-type AlInGaN, and the p-type semiconductor material 5 may be selected from one or more of the following: p-type diamond, p-type NiO, p-type GaN and p-type polycrystalline GaN.

[0020] It should be understood that a doping mode for the n-type semiconductor layer 3 may be selected from one of the following: uniform doping, modulation doping and delta doping. In this embodiment, the doping mode for the n-type semiconductor layer 3 will also not be specifically limited.

[0021] It should be understood that the specific shape of the p-type semiconductor material 5 may vary in accordance with a width of the groove 4 in the gate region. Although, in a structure shown in FIG. 5, a middle portion of the p-type semiconductor material 5 is recessed to form a T-shaped structure, when the width of the groove 4 is relatively small (e.g., less than 0.25 µm), the middle portion of the p-type semiconductor material 5 may also be in a folded state, which will not be limited in the present invention.

[0022] It can be known that, by forming the n-type semiconductor layer 3 on the barrier layer 24, forming the groove 4 in the gate region of the n-type semiconductor layer 3 and forming the p-type semiconductor material 5 in the groove 4, the purposes of pinching off a n-type conductive layer below a gate may be achieved to realize the enhancement-mode device. More importantly, since the n-type semiconductor layer 3 may perform electron compensation on the channel layer 23, the influence of a surface state on the two-dimensional electron gas is avoided. Therefore, the requirement of turning on the device can still be satisfied without selective etching of all portions of the p-type semiconductor material except for the gate region. Consequently, the process difficulty is reduced, and the stability and reliability of the device are improved. Meanwhile, the n-type semiconductor layer 3 may also protect the semiconductor structure in a lower layer. During the etching of the p-type semiconductor material 5, it is unnecessary to strictly control an etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter, thus, the step of passivating the barrier layer 24 in the prior art is omitted, and the process flow becomes relatively simple.

[0023] It should be understood that, although it is shown in FIG. 5 that the groove 4 completely runs through the n-type semiconductor layer 3 and rests on a bottom surface of the n-type semiconductor layer 3, in other embodiments of the present invention, it is also possible that the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. For example, as shown in FIG. 5', when the barrier layer 24 is of the sandwich structure, the groove 4 may run through the middle layer 242 in the sandwich structure of the barrier layer 24. In this case, the middle layer 242 may function as a stop layer in the local etching process of the groove 4 so as to protect the first outer interlayer 241 on the surface of the channel layer 23 from being damaged by the local etching process. In another embodiment of the present invention, as shown in FIG. 5", the groove 4 may also partially run through the n-type semiconductor layer 3, and the bottom surface of the groove 4 rests the inside of the n-type semiconductor layer 3. A depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate to realize the enhancement-mode device.

[0024] In an example, as shown in FIG. 6, a source region and a drain region located on two sides of the gate region are further defined on the surface of the barrier layer 24, a source electrode 6 is formed in the source region and in ohmic contact with the barrier layer 24, and a drain electrode 7 is formed in the drain region and in ohmic contact with the barrier layer 24. The p-type semiconductor material 5 may be directly used as a gate electrode (as shown in FIG. 6), or an electrode material 51 may also be fabricated on the p-type semiconductor material 5 to serve as a gate electrode (as shown in FIG. 6'). It should also be understood that, the source electrode 6, the drain electrode 7 and the electrode material 51 on the p-type semiconductor material 5 may be made of a metal material, for example nickel alloy, or may be made of a metal oxide or semiconductor material. In the present invention, the specific material used for preparing the source electrode 6, the source electrode 7 and the electrode material 51 on the p-type semiconductor material 5 will not be limited.

[0025] Specifically, based on the device structure shown in FIG. 5, before the source electrode 6 and the drain electrode 7 are fabricated, it is necessary to etch the p-type semiconductor material 5 and the n-type semiconductor layer 3 above the source region and the drain region to expose the source region and the drain region on the surface of the barrier layer 24 so as to fabricate the source electrode 6 and the drain electrode 7, so the device structure shown in FIG. 6 is finally formed. In this case, the p-type semiconductor material 5 merely covers the surface of the n-type semiconductor layer 3 between source region and the gate region in a horizontal direction, the surface of the n-type semiconductor layer 3 between the drain region and the gate region in the horizontal direction and the inside of the groove 4, i.e., a final shape of the p-type semiconductor material 5 covers all surfaces of the n-type semiconductor layer 3 except for the surface above the source region and the drain region.

[0026] However, it should be understood that, since the enhancement-mode device can be realized as long as the p-type semiconductor material 5 can pinch off the n-type conductive layer below the gate region, the p-type semiconductor material 5 may also be in other final shapes as long as the p-type semiconductor material 5 is reserved in the groove 4 in the gate region. In the present invention, it is only limited that at least the groove 4 in the gate region is filled with the p-type semiconductor material 5, but for other regions except for the gate region, the p-type semiconductor material may be selectively formed according to the process and design requirements. The shape of a portion of the p-type semiconductor material except for the gate region will not be limited in the present invention.

[0027] For example, the final shape of the p-type semiconductor material 5 may at least include the following situations.

[0028] As shown in FIG. 7a, the p-type semiconductor material 5 may be formed only in the gate region; and after the source electrode 6 and the drain electrode 7 are prepared, the p-type semiconductor material 5 is still formed only in the gate region, as show in FIG. 7b.

[0029] As shown in FIG. 8a, in addition to being formed in the gate region, the p-type semiconductor material 5 may also cover the surface of the n-type semiconductor layer 3 on one side of the gate region close to the source region in the horizontal direction; and after the source electrode 6 and the drain electrode 7 are prepared, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 between the source region and the gate region in the horizontal direction, as shown in FIG. 8b.

[0030] As shown in FIG. 9a, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 on one side of the gate region close to the drain region in the horizontal direction; and after the source electrode 6 and the drain electrode 7 are prepared, in addition to being formed in the gate region, the p-type semiconductor material 5 also covers the surface of the n-type semiconductor layer 3 between the drain region and the gate region in the horizontal direction, as shown in FIG. 9b.

[0031] As shown in FIG. 10a, in an embodiment of the present invention, in order to further protect the semiconductor structure in the lower layer, passivate the surface of the n-type semiconductor layer 3 and improve the dynamic characteristics, the enhancement-mode device further includes a first semiconductor layer 81 formed between the n-type semiconductor layer 3 and the p-type semiconductor material 5, and a second semiconductor layer 82 formed between the barrier layer 24 and the n-type semiconductor layer 3. Specifically, the first semiconductor layer 81 is first deposited on the surface of the n-type semiconductor layer 3 and the groove 4 is then formed in the gate region. The groove 4 needs to completely run through the first semiconductor layer 81; and if the groove 4 does not completely run through the first semiconductor layer 81, the groove 4 cannot at least partially run through the n-type semiconductor layer 3. The second semiconductor layer 82 is deposited on the surface of the barrier layer 24 before the n-type semiconductor layer 3 is prepared on the barrier layer 24; and then the n-type semiconductor layer 3 is prepared on a surface of the second semiconductor layer 82. However, it should be understood that, in examples not covered by the claims, the enhancement-mode device may include only the first semiconductor layer 81 (as shown in FIG. 10b) or only the second semiconductor layer 82 (as shown in FIG. 10c) according to the actual design requirements.

[0032] It should be understood that, although it is shown in FIG. 10a and FIG. 10c that the groove 4 runs through the n-type semiconductor layer 3 and the second semiconductor layer 82 and it is shown in FIG. 10b that the groove 4 runs through the n-type semiconductor layer 3, in other embodiments of the present invention, the groove 4 may partially run through the n-type semiconductor layer 3; or the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate so as to realize the enhancement-mode device.

[0033] According to the present invention, both the first semiconductor layer 81 and the second semiconductor layer 82 are on-doped semiconductor layers, and are made of the same material as the n-type semiconductor layer 3. By taking the GaN-based enhancement-mode device of the present invention, the first semiconductor layer 81 and the second semiconductor later 82 may be made of, for example, non-doped GaN.

[0034] In an unclaimed example, by taking a GaN-based enhancement-mode device including only a first semiconductor layer 81, when the channel layer 23 is of a periodic structure having a thickness of 15 nm and being made of Al 0.15 GaN / GaN, and if an n-type GaN layer having a thickness of 20 nm is prepared above the channel layer 23 (the doping concentration of Si is 2.5E18 / cm 3< ) and an non-doped GaN layer having a thickness of 100 nm and a p-type GaN layer having a thickness of 60 nm are successively prepared above the n-type GaN layer (the doping concentration of Mg is 3E19 / cm 3< ), an energy band diagram of the formed enhancement-mode device may be shown in FIG. 11. It can be known from the energy band diagram that the enhancement-mode device is perfectly realized in the present invention. However, it should be understood that the parameters such as thickness and concentration in this embodiment may be determined according to the design requirements and will not be specifically limited in the present invention.

[0035] FIG. 12 is a schematic flowchart of a method for manufacturing an enhancement-mode device according to an example. As shown in FIG. 12, the method for manufacturing the enhancement-mode device includes the following steps.

[0036] Step 1201: As shown in FIG. 1, providing a substrate 1. The substrate 1 may be selected from a semiconductor material, a ceramic material, a high polymer material and the like. For example, the substrate 1 is preferably selected from sapphire, silicon carbide, silicon, lithium niobate, Silicon-on-Insulator (SOI), gallium nitride or aluminum nitride.

[0037] Step 1202: As shown in FIG. 2, growing a channel layer 23 and a barrier layer 24 successively on the substrate 1. In an embodiment of the present invention, before the growth of the channel layer 23, a nucleating layer 21 and a buffer layer 22 may be successively grown on the substrate 1. The respective functions and constituents of the nucleating layer 21, the buffer layer 22, the channel layer 23 and the barrier layer 24 have been described above and will not be repeated herein again.

[0038] Step 1203: As shown in FIG. 3, forming an n-type semiconductor layer 3 on the barrier layer 24, a gate region being defined on a surface of the n-type semiconductor layer 3. By taking a GaN-based enhancement-mode device as an example, the material of the n-type semiconductor layer may be selected from one or more of the following: n-type GaN, n-type AlGaN and n-type AlInGaN. The n-type semiconductor layer 3 may grow in situ, or may be prepared by Atomic layer deposition (ALD), Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), Metal-Organic Chemical Vapor Deposition (MOCVD) or combinations thereof. It should be understood that the methods for forming the n-type semiconductor layer 3 described herein are merely exemplary, and in the present invention, the n-type semiconductor layer 3 may be formed by any method known to those skilled in the art.

[0039] Step 1204: As shown in FIG. 4, forming, in the gate region of the n-type semiconductor layer 3, a groove 4 extending towards the barrier layer 24. In an embodiment of the present invention, the etching process may be, for example, chlorine-based plasma etching. Due to the selectivity of the fluorine-based plasma etching, the etching process may stop when etching is carried out to the barrier layer 24, thereby forming the groove 4.

[0040] Step 1205: As shown in FIG. 5, forming, on the surface of the n-type semiconductor layer 3, a p-type semiconductor material 5 that fills the inside of the groove 4. For example, the p-type semiconductor material 5 may be selected from p-type diamond, p-type NiO, p-type GaN, p-type polycrystalline GaN or the like.

[0041] It should be understood that, although it is shown in FIG. 5 that the groove 4 completely runs through the n-type semiconductor layer 3 and rests on the bottom surface of the n-type semiconductor layer 3, in other embodiments of the present invention, it is also possible that the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. For example, as shown in FIG. 5', when the barrier layer 24 is of a sandwich structure, the groove 4 may run through the middle layer 242 in the sandwich structure of the barrier layer 24. In this case, the middle layer 242 can function as a stop layer in the local etching process of the groove 4, so as to protect the first outer interlayer on the surface of the channel layer 23 from being damaged by the local etching process. In another embodiment of the present invention, as shown in FIG. 5", the groove 4 may also partially run through the n-type semiconductor layer 3, and the bottom surface of the groove 4 rests the inside of the n-type semiconductor layer 3. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductor layer below the gate so as to realize the enhancement-mode device.

[0042] Step 1206: As shown in FIG. 6, etching away a semiconductor structure above the source region to expose the barrier layer 24, and preparing, in the source region, a source electrode 6 in ohmic contact with the barrier layer 24; and etching away a semiconductor structure above the drain region to expose the barrier layer 24, and preparing, in the drain region, a drain electrode 7 in ohmic contact with the barrier layer 24.

[0043] The p-type semiconductor material 5 may be directly used as a gate electrode (as shown in FIG. 6), or an electrode material 51 may further be fabricated on the p-type semiconductor material 5 to serve as a gate electrode (as shown in FIG. 6'). It should also be understood that, the source electrode 6, the drain electrode 7 and the electrode material 51 on the p-type semiconductor material 5 may be made of a metal material, for example nickel alloy, or may be made of a metal oxide or semiconductor material. In the present invention, the specific material used for preparing the source electrode 6, the source electrode 7 and the electrode material 51 on the p-type semiconductor material 5 will not be limited.

[0044] It should be understood that, since the enhancement-mode device can be realized as long as the p-type semiconductor material 5 can pinch off the n-type conductive layer below the gate region, the p-type semiconductor material 5 may also be in other final shapes as long as the p-type semiconductor material 5 is reserved in the groove 4 in the gate region. In the present invention, it is only limited that at least the groove 4 in the gate region is filled with the p-type semiconductor material 5, but for other regions except for the gate region, the p-type semiconductor material may be selectively formed according to the process and design requirements. The shape of a portion of the p-type semiconductor material except for the gate region will not be limited in the present invention.

[0045] In an embodiment of the present invention, the step of preparing the p-type semiconductor material 5 may include the following steps. The p-type semiconductor material 5 is first prepared on the n-type semiconductor layer 3 (e.g., by epitaxial growth), the p-type semiconductor material 5 is formed on the surface of the n-type semiconductor layer 3 and fills the inside of the groove 4, as shown in FIG. 5. Then, according to the design requirements, it is determined whether and how to etch the p-type semiconductor material 5, as long as at least the p-type semiconductor material 5 in the gate region is reserved (as shown in FIG. 7a, FIG. 8a and FIG. 9a) so as to pinch off the n-type conductive layer below the gate. Corresponding to FIG. 7a, FIG. 8a and FIG. 9a, the device structure may be separately shown in FIG. 7a, FIG. 8b and FIG. 9b after the source electrode 6 and the drain electrode 7 are prepared, and will not be repeated herein again.

[0046] It should be understood that, since the n-type semiconductor layer 3 can protect the semiconductor structure in the lower layer, during the process of etching the p-type semiconductor material 5, it is unnecessary to accurately control the etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter. It can be known that, by introducing the n-type semiconductor layer 3, the process difficulty in the etching process of the p-type semiconductor material 5 is reduced.

[0047] In an embodiment of the present invention, before the groove 4 is formed, the first semiconductor layer 81 is deposited on the surface of the n-type semiconductor layer 3, and the groove 4 is then formed in the gate region; and, before the n-type semiconductor layer 3 is formed on the barrier layer 24, the second semiconductor layer 82 is deposited on the surface of the barrier layer 24. The formed device structure may be shown in FIG. 10a to FIG. 10c. Both the first semiconductor layer 81 and the second semiconductor layer 82 are non-doped semiconductor layers, for example, non-doped GaN, to further protect the semiconductor structure in the lower layer, passivate the surface of the n-type semiconductor layer 3 and improve the dynamic characteristics.

[0048] It should be understood that, although it is shown in FIG. 10a and FIG. 10c that the groove 4 runs through the n-type semiconductor layer 3 and the second semiconductor layer 82 and it is shown in FIG. 10b that the groove 4 runs through the n-type semiconductor layer 3, in other embodiments of the present invention, the groove 4 may partially run through the n-type semiconductor layer 3; or the groove 4 completely runs through not only the n-type semiconductor layer 3, but also a portion of the barrier layer 24. The depth of the groove 4 will not be strictly limited in the present invention as long as the p-type semiconductor material 5 inside the groove 4 can pinch off the n-type conductive layer below the gate so as to realize the enhancement-mode device.

[0049] With regard to the enhancement-mode device prepared by the method for manufacturing an enhancement-mode device provided in the embodiments of the present invention, by forming the n-type semiconductor layer 3 on the barrier layer 24, forming the groove structure in the gate region of the n-type semiconductor layer 3 and forming the p-type semiconductor material 5 in the groove 4, the purposes of pinching off the n-type conductive layer below the gate may be achieved to realize the enhancement-mode device . More importantly, since the n-type semiconductor layer may perform electron compensation on the channel layer, the influence of a surface state on a two-dimensional electron gas is avoided. Therefore, the requirement of turning on the device can still be satisfied without selective etching of all portions of the p-type semiconductor material except for the gate region. Consequently, the process difficulty is reduced, and the stability and reliability of the device are improved. Meanwhile, the n-type semiconductor layer 3 may also protect the semiconductor structure in a lower layer. During the etching of the p-type semiconductor material 5, it is unnecessary to strictly control the etching depth. Even if a portion of the n-type semiconductor layer 3 is etched, it does not matter, thus, the step of passivating the barrier layer 24 in the prior art is omitted, and the process flow becomes relatively simple.

[0050] It should be understood that, although this specification has been described by implementations, not every implementation includes only one independent technical solution. The narration mode of this specification is merely for clarity, those skilled in the art shall regard this specification as a whole, and the technical solutions in various implementations may also be properly combined to form other implementations that may be understood by those skilled in the art. The series of detailed descriptions listed above are merely specific descriptions of feasible implementations and not intended to limit the protection scope of the present invention.

Examples

Embodiment Construction

[0013]The present invention will be described below in detail by specific implementations with reference to the accompanying drawings. However, these implementations do not constitute any limitations to the present invention, and all structural, methodological or functional alterations made by a person of ordinary skill in the art according to these implementations shall fall into the protection scope of the present invention.

[0014]Additionally, repetitive numbers or marks may be used in different embodiments. These repetitions are merely for briefly and clearly describing the present invention, and do not represent any correlation between different embodiments and / or structures to be discussed.

[0015]FIG. 5 shows a schematic structural diagram of an enhancement-mode device according to an example. As shown in FIG. 5, the enhancement-mode device includes: a substrate 1; a channel layer 23 and a barrier layer 24 both formed on the substrate 1; an n-type semiconductor layer 3 formed on...

Claims

1. An enhancement-mode device, comprising a substrate (1); a channel layer (23) and a barrier layer (24) successively formed on the substrate (1), the channel layer (23) and the barrier layer (24) forming a heterogeneous structure, the channel layer (23) and the barrier layer (24) are made of a GaN-based material capable of forming a two-dimensional electron gas; an n-type semiconductor layer (3) formed on the barrier layer (24); a groove (4) formed in a gate region of the n-type semiconductor layer (3); and a p-type semiconductor material (5) that is formed on a surface of the n-type semiconductor layer (3) and at least fills the groove (4); wherein the enhancement-mode device further comprises: a first semiconductor layer (81) formed between the n-type semiconductor layer (3) and the p-type semiconductor material (5); and a second semiconductor layer (82) formed between the barrier layer (24) and the n-type semiconductor layer (3), wherein the barrier layer (24) is of a sandwich structure formed by a first outer interlayer (241) on a surface of the channel layer (23), a second outer interlayer (243), and a middle layer (242) sandwiched between the first outer interlayer (241) and the second outer interlayer (243), wherein both the first semiconductor layer (81) and the second semiconductor layer (82) are non-doped semiconductor layers and are made of the same material as the n-type semiconductor layer (3).

2. The enhancement-mode device according to claim 1, wherein the groove (4) completely runs through the n-type semiconductor layer (3).

3. The enhancement-mode device according to claim 1, wherein a source region and a drain region located on two sides of the gate region are defined on a surface of the barrier layer (24), wherein the enhancement-mode device further comprises: a source electrode (6) that is formed in the source region and in ohmic contact with the barrier layer (24); and a drain electrode (7) that is formed in the drain region and in ohmic contact with the barrier layer (24).

4. The enhancement-mode device according to claim 1, wherein the material of the n-type semiconductor layer (3) is selected from one or more of the following: n-type GaN, n-type AlGaN, and n-type AlInGaN, and / or, the p-type semiconductor material (5) is selected from one or more of the following: p-type diamond, p-type NiO, p-type GaN, and p-type polycrystalline GaN.

5. The enhancement-mode device according to claim 1, wherein a doping mode for the n-type semiconductor layer (3) is selected from one of the following: uniform doping, modulation doping and delta doping.

6. The enhancement-mode device according to claim 1, wherein between the substrate (1) and the channel layer (23), the enhancement-mode device further comprises: a nucleating layer (21) and a buffer layer (22) successively formed above the substrate (1).

7. A method for manufacturing an enhancement-mode device, the method comprising the following steps of: providing (1201) a substrate, and forming (1202) a channel layer and a barrier layer on the substrate, the channel layer and the barrier layer forming a heterogeneous structure, the channel layer (23) and the barrier layer (24) are made of a GaN-based material capable of forming a two-dimensional electron gas; forming (1203) an n-type semiconductor layer on the barrier layer, a gate region being defined on a surface of the n-type semiconductor layer; forming (1204), in the gate region of the n-type semiconductor layer, a groove extending towards the barrier layer; and forming (1205), on a surface of the n-type semiconductor layer a p-type semiconductor material that at least fills the groove; wherein before forming the groove, the method further comprises: depositing a first semiconductor layer on the surface of the n-type semiconductor layer, such that after forming the p-type semiconductor material the first semiconductor layer is formed between the n-type semiconductor layer and the p-type semiconductor material; and, before forming the n-type semiconductor layer on the barrier layer, the method further comprises: depositing a second semiconductor layer on the surface of the barrier layer, wherein the barrier layer is of a sandwich structure formed by a first outer interlayer on a surface of the channel layer, a second outer interlayer, and a middle layer sandwiched between the first outer interlayer and the second outer interlayer; wherein both the first semiconductor layer and the second semiconductor layer are non-doped semiconductor layers and are made of the same material as the n-type semiconductor layer.

8. The method for manufacturing the enhancement-mode device according to claim 7, wherein the forming, in the gate region, a groove extending towards the barrier layer comprises: forming, in the gate region, the groove completely running through the n-type semiconductor layer.

9. The method for manufacturing the enhancement-mode device according to claim 7, wherein the forming, on a surface of the n-type semiconductor layer, a p-type semiconductor material that at least fills the groove comprises: preparing, on the n-type semiconductor layer, the p-type semiconductor material that covers the surface of the n-type semiconductor layer and fills the groove.

10. The method for manufacturing the enhancement-mode device according to claim 9, wherein the preparing, on a surface of the n-type semiconductor layer, the p-type semiconductor material that at least fills the inside of the groove further comprises: etching the p-type semiconductor material to at least reserve the p-type semiconductor material in the gate region.

11. The method for manufacturing the enhancement-mode device according to claim 7, wherein a source region and a drain region located on two sides of the gate region are defined on a surface of the barrier layer, wherein the method further comprises: etching (1206) away a semiconductor structure above the source region to expose the barrier layer, and preparing, in the source region, a source electrode in ohmic contact with the barrier layer; and etching away a semiconductor structure above the drain region to expose the barrier layer, and preparing, in the drain region, a drain electrode in ohmic contact with the barrier layer.

Images