A low-e coating including double silver and with high transmittance and with increased thermal reflection

Abstract

The present invention relates to a low-emission (low-e) coating with solar control characteristic with infrared reflective layers used as visible transmittance and thermal insulation glass.

Description

[0001] A LOW-E COATING INCLUDING DOUBLE SILVER AND WITH HIGH TRANSMITTANCE AND WITH INCREASED THERMAL REFLECTION

[0002] TECHNICAL FIELD

[0003] The present invention relates to a low-emission (low-e) coating with solar control characteristic with infrared reflective layers used as visible transmittance and thermal insulation glass.

[0004] PRIOR ART

[0005] One of the factors that differentiate the optical properties of the glasses is the coating applications made on the glass surface. One of the coating applications is the magnetic field- supported sputtering method in a vacuum environment. It is a frequently used method in the production of architectural and automotive coatings with low-e properties. Transmittance and reflection values in the visible, near- infrared, and infrared region of the glasses coated with said method can be obtained at the targeted levels.

[0006] The selectivity value is also an important parameter in coated glasses apart from the transmittance and reflection values. Selectivity is defined as the ratio of the visible region transmittance value to the solar factor in ISO 9050 (2003) standard. The selectivity values of the coatings can be kept at the targeted levels with the number of Ag layers, the type of seed layer, and the parametric optimizations of the layers.

[0007] The invention with publication number US9499899 discloses systems, methods and apparatus for forming low-emission panels, which may comprise a base and a reflective layer formed on the base. Panels with low-emission may additionally comprise an upper dielectric layer formed on the reflective layer, thereby forming a reflective layer between the upper dielectric layer and the base. The upper dielectric layer may comprise a triple metal oxide, such as zinc tin aluminum oxide. The upper dielectric layer may also comprise aluminum. The concentration of aluminum can be between 1% atomic and 15% atomic or between 2% atomic and 10% atomic. The atomic ratio of zinc to tin in the upper dielectric layer can be between 0.67 and 1 .5 and between 0.9 and 1.1.

[0008] BRIEF DESCRIPTION OF THE INVENTION The present invention relates to a glass having low-e coating with solar control characteristic in order to bring new advantages to the related technical field.

[0009] An object of the invention is to provide a glass having low-e coating that effectively transmits visible light while at the same time effectively reflecting solar energy.

[0010] Another object of the invention is to present a glass having low-e coating where the emissivity value is reduced.

[0011] Another object of the invention is to present a glass having low-e coating with increased visible light transmittance.

[0012] Another object of the invention is to provide a glass having low-e coating with high transmittance with improved neutrality.

[0013] The present invention is a glass having low-e coating in order to realize all the purposes that are mentioned above and will emerge from the following detailed description. Accordingly, said invention is characterized in that said low-e coating comprises the following from the glass outwardly, respectively,

[0014] - A first dielectric layer selected from SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx;

[0015] - A second dielectric layer selected from TiOx, ZrOx, NbOx;

[0016] - A first seed layer selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnSnOx, ZnOx;

[0017] A first infrared reflective layer;

[0018] - A first barrier layer selected from NiCr, NiCrOx, Ti, TiOx, ZnAIOx, ZnOx;

[0019] - A third dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx;

[0020] - A fourth dielectric layer selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx;

[0021] - A second seed layer selected from NiCr, NiCrOx, TiOx, ZnSnOx, ZnAIOx, ZnOx; A second infrared reflective layer;

[0022] - A second barrier layer selected from NiCr, NiCrOx, Ti, TiOx, ZnAIOx, ZnOx

[0023] - A fifth dielectric layer selected from ZnSnOx, ZnAIOx, SiOxNy, ZrOx, SiOx, SixNy, TiOx, ZnOx;

[0024] - An upper dielectric layer comprising SiOxNy. Another preferred embodiment of the invention is that the thickness of the second infrared reflective layer is greater than the thickness of the first infrared reflective layer. Thus, it is contributed to reduce the emissivity value to the desired value.

[0025] A preferred embodiment of the invention is that the ratio of the thickness of the second infrared reflective layer to the thickness of the first infrared reflective layer is between 1 .0 and 1 .7. Thus, it is contributed to reduce the emissivity value to the desired value.

[0026] The second barrier layer comprises ZnAIOxin a preferred embodiment of the invention. Thus, it is contributed to reduce the emissivity value to the desired value. It also contributes to the high visible region light transmittance.

[0027] It comprises the following in a preferred embodiment of the invention;

[0028] - A first dielectric layer comprising SixNy;

[0029] - A second dielectric layer comprising TiOx;

[0030] - A first seed layer comprising ZnAIOx;

[0031] A first infrared reflective layer comprising Ag;

[0032] - A first barrier layer comprising NiCrOx;

[0033] A third dielectric layer comprising ZnAIOx;

[0034] - A fourth dielectric layer comprising SixNy;

[0035] - A second seed layer comprising ZnAIOx;

[0036] A second infrared reflective layer comprising Ag;

[0037] - A second barrier layer comprising ZnAIOx;

[0038] A fifth dielectric layer comprising ZnAIOx;

[0039] - An upper dielectric layer comprising SiOxNy.

[0040] The low-e coating is as follows from the glass outwardly, respectively in a preferred embodiment of the invention; the first dielectric layer comprising SixNyis in the thickness range of 5 nm - 18 nm; the second dielectric layer comprising TiOxis in the thickness range of 3 nm - 20 nm; the first seed layer comprising ZnAIOx is in the thickness range of 3 nm - 25 nm; the first infrared reflective layer comprising Ag is in the thickness range of 6 nm - 20 nm; the first barrier layer comprising NiCrOxis in the thickness range of 1 .3 nm - 2.5 nm; the third dielectric layer comprising ZnAIOxis in the thickness range of 11 nm - 27 nm; the fourth dielectric layer comprising SixNyis in the thickness range of 35 nm - 55 nm; the second seed layer comprising ZnAIOx is in the thickness range of 11 nm - 27 nm; the second infrared reflective layer comprising Ag is in the thickness range of 6 nm - 20 nm; the second barrier layer comprising ZnAIOx is in the thickness range of 2.5 nm - 3.8 nm; the fifth dielectric layer comprising ZnAIOx is in the thickness range of 11 nm - 28 nm;

[0041] - the upper dielectric layer comprising SiOxNyis in the thickness range of 10 nm - 30 nm.

[0042] The low-e coating is as follows from the glass outwardly, respectively in a preferred embodiment of the invention; the first dielectric layer comprising SixNyis in the thickness range of 5 nm - 15 nm; the second dielectric layer comprising TiOxis in the thickness range of 4 nm - 18 nm; the first seed layer comprising ZnAIOx is in the thickness range of 4 nm - 23 nm; the first infrared reflective layer comprising Ag is in the thickness range of 7 nm - 19 nm; the first barrier layer comprising NiCrOxis in the thickness range of 1 .5 nm - 2.3 nm; the third dielectric layer comprising ZnAIOx is in the thickness range of 15 nm - 20 nm; the fourth dielectric layer comprising SixNyis in the thickness range of 40 nm - 52 nm; the second seed layer comprising ZnAIOx is in the thickness range of 13 nm - 25 nm; the second infrared reflective layer comprising Ag is in the thickness range of 7 nm - 19 nm; the second barrier layer comprising ZnAIOx is in the thickness range of 2.7 nm - 3.5 nm; the fifth dielectric layer comprising ZnAIOx is in the thickness range of 13 nm - 25 nm; the upper dielectric layer comprising SiOxNyis in the thickness range of 12 nm - 27 nm.

[0043] BRIEF DESCRIPTION OF THE FIGURES

[0044] Figure 1 shows the general view of the low-e layer sequence.

[0045] REFERENCE NUMBERS GIVEN IN THE FIGURE

[0046] 10 Glass

[0047] 20 Low-e coating

[0048] 21 Under dielectric structure

[0049] 211 First dielectric layer

[0050] 212 Second dielectric layer

[0051] 213 First seed layer

[0052] 22 First infrared reflective layer

[0053] 23 First barrier layer

[0054] 24 Intermediate dielectric structure

[0055] 241 Third dielectric layer

[0056] 242 Fourth dielectric layer

[0057] 243 Second seed layer

[0058] 25 Second infrared reflective layer

[0059] 26 Second barrier layer

[0060] 27 Upper dielectric structure

[0061] 271 Fifth dielectric layer

[0062] 272 Upper dielectric layer

[0063] DETAILED DESCRIPTION OF THE INVENTION

[0064] The glass (10) having low-e coating (20) of the invention, is explained with examples that do not have any limiting effect only for a better understanding of the subject in this detailed description.

[0065] The production of glasses (10) having low-e coating (20) for architecture and automotive is carried out by the “sputtering” method. The present invention relates generally to double silver glasses (10) having low-e coating (20) used as visible transmittance and thermal insulation glass (10), the content and application of said low-e coating (20). The glass (10) having low-e coating (20) of the invention, can be used in heat glass units and laminated structures for the architectural and automotive sectors.

[0066] A low-e coating (20) consisting of a plurality of metal, metal oxide and / or metal nitride / oxynitride layers located on the surface of the glass (10) using the sputtering method was developed to obtain a glass (10) having low-e coating (20) with a high level of visible light transmittance and solar control characteristic to be applied to the surface of a glass (10) in this invention. Said layers are deposited on each other in a vacuum, respectively. The glass (10) having low-e coating (20) with solar control characteristic of the invention can be used as an architectural and automotive glass (10).

[0067] The following data were determined as a result of experimental studies to improve a low-e coating (20) sequence both in terms of ease of production and optical properties.

[0068] The solar energy spectrum is a first infrared reflective layer (22) and a second infrared reflective layer (25) that allows to pass the visible region (hereinafter referred to as TViS%) at the targeted level and reflect (by passing less) the thermal radiation in the infrared region in the low-e coating (20) of the invention. The Ag layer is used as the first infrared reflective layer (22) and the second infrared reflective layer (25), and the heat emission is low.

[0069] The refractive indices of all layers were determined by using computational methods over the optical constants obtained from the single layer measurements in the glass (10) having low-e coating (20) of the invention. Said refractive indices are refractive index data at 550 nm.

[0070] There is an under dielectric structure (21 ) in contact with the glass (10) in the low-e coating (20) of the invention. A first dielectric layer (21 1 ) is used as the lowest layer in said under dielectric structure (21 ). Said first dielectric layer (211 ) comprises at least one of the materials SixNy, SiAINx, SiAIOxNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx. The first dielectric layer (21 1 ) comprises SixNyin the preferred embodiment. The first dielectric layer (21 1 ) comprising SixNyadheres very well to the glass (10). The change interval for the refractive index of the first dielectric layer (21 1 ) comprising SixNyis between 2.00 and 2.15. The change interval for the refractive index of the first dielectric layer (211 ) comprising SixNyis 2.02 to 2.12 in the preferred structure.

[0071] The thickness of the first dielectric layer (21 1 ) comprising SixNyis between 5 nm - 18 nm.

[0072] The thickness of the first dielectric layer (21 1 ) comprising SixNyis between 5 nm - 15 nm in the preferred embodiment. The thickness of the first dielectric layer (211 ) comprising SixNyis between 5 nm - 13 nm in an even more preferred embodiment.

[0073] At least one first seed layer (213) is positioned between the first dielectric layer (211 ) comprising SixNyand the Ag layer which is the first infrared reflective layer (22). The first seed layer (213) comprises at least one of the materials NiCr, NiCrOx, TiOx, ZnSnOx, ZnAIOx, ZnOx. The first seed layer (213) comprises ZnAIOxin the preferred embodiment. The thickness of the first seed layer (213) between 3 nm - 25 nm. The thickness of the seed layer (213) is between 4 nm - 23 nm in the preferred embodiment. The thickness of the first seed layer (213) is between 5 nm - 20 nm in an even more preferred embodiment.

[0074] A second dielectric layer (212) is positioned between the first seed layer (213) and the first dielectric layer (211 ) comprising SixNy. Said second dielectric layer (212) comprises at least one of the TiOx, ZrOx, NbOxlayers. TiOxis used as the second dielectric layer (212) in the preferred embodiment. Since TiOxis a material with a high refractive index, it provides the same optical performance with less total physical thickness and plays a role in increasing the Tvis % value of low-e coating (20). The refractive index of the TiOxlayer is between 2.40 and 2.60. It was determined as 2.45 - 2.55 in the preferred embodiment. The thickness of the second dielectric layer (212) comprising TiOxis between 3 nm - 20 nm. The thickness of the second dielectric layer (212) comprising TiOxis between 4 nm - 18 nm in the preferred embodiment. The thickness of the second dielectric layer (212) comprising TiOxis between 4 nm - 15 nm in an even more preferred embodiment.

[0075] When the first dielectric layer (21 1 ) comprising SixNyand the second dielectric layer (212) comprising the TiOx, which are the first and second layers after the glass are used together, the optical performance can be optimized by using the first dielectric layer (21 1 ) comprising the thinner SixNythanks to the high refractive index of the second dielectric layer (212) comprising the TiOx. Even though the TViS% values of glass (10) having low-e coating (20) do not change below the specified thickness value, there are significant changes in color and optical performance. If it is above, the transmittance color b* value among the color values of the glass (10) having low-e coating (20) in the CIELAB color space, or in other words, the “Tb” value shifts to the positive region, that is to say to the yellow color, and the visible region uncoated side reflection (hereinafter RgVis%) increases.

[0076] Visible region light transmittance, or TViS%, decreases, causing a deviation from the targeted performance. There is an intermediate dielectric structure (24) that separates the first infrared reflective layer (22) and the second infrared reflective layer (25) by positioning between the first infrared reflective layer (22) and the second infrared reflective layer (25) and ensures that the sequence of low-e layer (20) reaches the targeted performance. The intermediate dielectric structure (24) comprises at least one dielectric layer. The intermediate dielectric structure

[0077] (24) comprises at least one dielectric layer and at least one second seed layer (243) positioned adjacent to the dielectric layer in one embodiment of the invention. The second seed layer (243) comprises at least one of the materials NiCr, NiCrOx, TiOx, ZnSnOx, ZnAIOx, ZnOx. Preferably, the second seed layer (243) comprises ZnAIOx.

[0078] The intermediate dielectric layer structure (24) comprises at least two dielectric layers selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOxin the preferred embodiment of the invention. The two selected dielectric layers are in contact with each other. The intermediate dielectric structure (24) comprises a third dielectric layer (241 ), a fourth dielectric layer (242), and a second seed layer (243) together. The intermediate dielectric structure (24) is positioned to directly contact the second infrared reflective layer

[0079] (25) comprising Ag. The third dielectric layer (241 ) comprises ZnAIOx and the fourth dielectric layer (242) comprises SixNyin the preferred embodiment of the invention. The thickness of the third dielectric layer (241 ) comprising ZnAIOx is between 1 1 nm - 27 nm. The thickness of the third dielectric layer (241 ) comprising ZnAIOx is between 13 nm - 24 nm in the preferred embodiment. The thickness of the third dielectric layer (241 ) comprising ZnAIOx is between 15 nm - 20 nm in an even more preferred embodiment. The thickness of the fourth dielectric layer (242) comprising SixNyis between 35 nm - 55 nm. The thickness of the layer (242) of the fourth dielectric layer comprising SixNyis between 40 nm - 52 nm in the preferred embodiment. The thickness of the fourth dielectric layer (242) comprising SixNyis between 44 nm - 49 nm in an even more preferred embodiment.

[0080] The thickness of the second seed layer (243) comprising ZnAIOx is between 1 1 nm - 27 nm. The thickness of the second seed layer (243) comprising ZnAIOx is between 13 nm - 25 nm in the preferred embodiment. The thickness of the second seed layer (243) comprising ZnAIOx is between 15 nm - 23 nm in an even more preferred embodiment.

[0081] The glass (10) side and the coating side reflectance and color values create more options for obtaining the targeted values by optimizing separately the thicknesses and structures of the dielectric layers comprised in said intermediate dielectric structure (24). The intermediate dielectric structure (24) being in sandwich form is necessary to optimize the targeted reflection and color values, as well as to improve the optoelectronic properties of the second infrared reflective layer (25) comprising Ag.

[0082] Such as;

[0083] If the intermediate dielectric structure (24) consists of a single and thick layer, the intermediate dielectric structure (24), which is intended to be amorphous, is more likely to show a partially and / or completely crystalline structure. It is preferred that the layer used as a seed layer in direct contact with, the second infrared reflective layer (25) that comprises Ag, grows on the layer contacting the other surface of the layer itself, while the layer in which it grows is in an amorphous structure so that it is not adversely affected by the crystallization of the layer in which it grows. The second infrared reflective layer (25) comprising Ag and the third seed layer (243) comprising ZnAIOxare in direct contact in the invention. The fourth dielectric layer (242) comprising SixNyin the amorphous structure contacts the other surface of the third seed layer (243) comprising ZnAIOx. If the intermediate dielectric structure (24) consists of a third seed layer (243) comprising a single, thick ZnAIOx, the surface roughness of the third seed layer (243) that is the crystal will be increased. Increased surface roughness will contribute positively to the mechanical resistance of the glass (10) having low-e coating (20), but will reduce the rate of infrared reflectance of the second infrared reflective layer (25) located on the third seed layer (243). The layer thicknesses, layer contents, and sequence order in the low-e coating (20) need to be optimized as described in this invention in order to obtain all of the mechanical and optical properties for this reason. Thus, a problem such as the mismatch of the crystal and therefore the crystallization of the structure of the third seed layer (243) is affected and the possibility of unwanted residual stress are reduced. The sensitivity of the third seed layer (243) enables the second infrared reflective layer (25) to grow in the crystallographic orientation it should be. The intermediate dielectric structure (24) has a total thickness between 57 nm - 109 nm. The intermediate dielectric structure (24) has a total thickness between 66 nm - 101 nm in the preferred embodiment. Even more preferably, the intermediate dielectric structure (24) has a total thickness between 74 nm - 92 nm.

[0084] A first barrier layer (23) is positioned above the first infrared reflective layer (22) and a second barrier layer (26) is positioned above the second infrared reflective layer (25). The first barrier layer (23) and the second barrier layer (26) comprise at least one of the materials NiCr, NiCrOx, TiOx, ZnAIOx. NiCrOxis used as the first barrier layer (23) in the preferred embodiment. The thickness of the first barrier layer (23) is in the range of 1.3 nm - 2.5 nm. The thickness of the first barrier layer (23) is in the range of 1 .5 nm - 2.3 nm in the preferred embodiment. More preferably, the thickness of the first barrier layer (23) is in the range of 1 .7 nm - 2.3 nm.

[0085] ZnAIOx is preferably used as the second barrier layer (26). The thickness of the second barrier layer (26) is in the range of 2.5 nm - 3.8 nm. The thickness of the second barrier layer (26) is in the range of 2.7 nm - 3.5 nm in the preferred embodiment. More preferably, the thickness of the second barrier layer (26) is in the range of 2.8 nm - 3.5 nm.

[0086] The first barrier layer (23) and the second barrier layer (26) are used so that the Ag layers are not affected by the process gases used for the production of the subsequent layers from the Ag layers, which are the first infrared reflective layer (22) and the second infrared reflective layer (25). Meanwhile, they eliminate possible adhesion weakness before heat treatment by ensuring structural harmony in the metallic and dielectric transition between the dielectric layers that will come after the Ag layers.

[0087] An upper dielectric structure (27) is positioned on the second barrier layer (26). The upper dielectric structure (27) comprises a fifth dielectric layer (271 ) and an upper dielectric layer (272). The fifth dielectric layer (271 ) comprises at least one of ZnSnOx, ZnAIOx, SiOxNy, ZrOx, SiOx, SixNy, TiOx, ZnOx.

[0088] The ZnAIOx layer is used as the fifth dielectric layer (271 ). The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 1 1 nm - 28 nm. The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 13 nm - 25 nm in the preferred embodiment. The thickness of the fifth dielectric layer (271 ) comprising ZnAIOx is between 15 nm - 21 nm in an even more preferred embodiment.

[0089] When the layer comprising SiOxNyis used instead of the layer comprising SixNyas the upper dielectric layer (272), the same optical behavior can be achieved with a layer comprising thicker SiOxNybecause the refractive index of the layer comprising SiOxNyis lower than the layer comprising SixNy. Thus, the mechanical resistance of the coating is increased by using a thicker upper dielectric layer (272). The thickness of the upper dielectric layer (272) comprising SiOxNyis between 10 nm - 30 nm. The thickness of the upper dielectric layer (272) comprising SiOxNyis between 12 nm - 27 nm in the preferred embodiment. The thickness of the upper dielectric layer (272) comprising SiOxNyis between 14 nm - 23 nm.

[0090] The refractive index range for the first seed layer (213), the third dielectric layer (241 ), the second seed layer (243) and the fifth dielectric layer (271 ) comprising ZnAIOx is 1.93 - 2.13. The refractive index range of the first seed layer (213), the third dielectric layer (241 ), the second seed layer (243) and the fifth dielectric layer (271 ) comprising ZnAIOxin the preferred embodiment is 1 .98 - 2.08.

[0091] The thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 6 nm - 20 nm in order to obtain the targeted transmittance and reflection values for products having low-e coating (20) of the invention for architectural and automotive use. The thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 7 nm - 19 nm in the preferred embodiment. More specifically, the thicknesses of the first infrared reflective layer (22) and the second infrared reflective layer (25) are between 8 nm - 18 nm in order to achieve both the targeted performance value and the desired color properties and low inward and outward reflective values in the visible region.

[0092] The product must have two separate infrared reflective layers comprising Ag independent from each other in order to achieve the targeted selectivity and optical performance. Since a certain amount of heat rays coming from the outside are reflected by the second infrared reflective layer (25) to the glass (10) with low-e coating (20) comprising the double Ag, the amount of rays reaching the first infrared reflective layer (22) is less. Therefore, the amount of rays reflected from the first infrared reflective layer (22) will be both low and will be absorbed again as the coating moves out of all of the layers. In addition, they suffer additional losses by being reflected inwards by the second infrared reflective layer (25). Therefore, the total amount of reflected rays will be less. The thickness of the second infrared reflective layer (25) is kept higher than the thickness of the first infrared reflective layer (22) to improve the amount of reflection. The ratio of the thickness of the first infrared reflective layer (22) and the second infrared reflective layer (25) to each other is between 1 .0 and 1 .7. Preferably, the ratio of the thickness of the first infrared reflective layer (22) and the second infrared reflective layer (25) to each other is between 1.1 and 1.55. This situation is shown with examples in Table-1 and Table-2.

[0093] The targeted performance value with the above-mentioned layer sequence is preferred to be between 69% and 83% of the visible region transmittance value without heat treatment for the use of 6 mm lower glass (10) as a single glass (10). It should be between 71% and 81% in the more preferred embodiment. It is preferred that the direct solar transmittance value without heat treatment is between 35% and 47% for the use of 6 mm lower glass (10) as a single glass (10). It should be between 37% and 45% in the more preferred embodiment. In addition, the optimization of all other dielectric layers should support the achievement of this performance.

[0094] The properties of the upper dielectric layer (272) of the low-e coating (20) are very important in terms of the storage life, resistance and visual aesthetics of the coated glass (10).

[0095] A further role of the first barrier layer (23) and the second barrier layer (26) is that the optoelectronic properties of the first infrared reflective layer (22) and the second infrared reflective layer (25) of the low-e coating (20) are stable throughout the secondary operations and lifetime. The physical thicknesses of the first barrier layer (23) and the second barrier layer (26) are determined for the targeted TViS% value.

[0096] The glass (10) having low-e coating (20) defined above allows obtaining thermal insulation units with neutral color values. The reflection a* and b* values remain between 0 and -10, ensuring neutrality when the surface normality on the uncoated side of the glass (10) with low-e coating (20) obtained is examined with 0° in the CIELAB color space.

[0097] The glass (10) having low-e coating (20) defined above preserves the neutral color values at different observation angles. The reflection a* and b* values vary at most ±2 degrees at the observation angles up to -60° from the surface normal on the uncoated side of the glass (10) with low-e coating (20) obtained in the CIELAB color space. The above-mentioned neutrality is also preserved in different observation angles in this way.

[0098] The thickness of the Ag-comprising layer farthest from the glass (10) provides an advantage in terms of preventing heat emission in low-e coatings (20), where these individual Ag- comprising layers and the crystallinity and optoelectronic properties of the multiple individual Ag-comprising layer and are similar. It is necessary to use a barrier layer in order to obtain the crystallinity and optoelectronic properties of the Ag-comprising layers during the coating process and to preserve these properties throughout the life of the product. Reactive processes, especially by using oxygen gas, during the coating of barrier layers may adversely affect the crystallinity and optoelectronic properties of Ag-comprising layers. Keeping the amount of oxygen gas low is a solution to prevent this situation. When the barrier layers selected based on the metallic target materials are used, it may be more difficult to increase the TViSvalue of the product to the desired levels, without deteriorating the mechanical and chemical resistance, if the oxygen gas is kept less and the resultant metal oxide is sub-stoichiometric or, in other words, metal sub-oxide. This problem can be prevented by preferring the thickness of the barrier layer at the lowest possible levels. However, the resistance of the product against mechanical and chemical effects may decrease during its secondary processes and lifetime in this case. The problems mentioned are overcome by the use of an oxide barrier layer of sufficient thickness, which can provide mechanical and chemical resistance despite the relatively low oxygen supply. It is preferred to use a layer comprising ZnAIOxas the second barrier layer (26), which can be a solution to all these problems in the product of the invention.

[0099] Table-1 : Sample sequences Table-2: Performance values of the sampled sequences

[0100] The use of ZnAIOx as the second barrier layer (26) has also been observed to contribute positively to the positioning of glass (10) having low-e coating (20) in thermal insulation units by reducing the emissivity value. When it comes to the use of metal sub-oxide layers as the second barrier layer (26), it results in the absorption of heat rather than the reflection of heat.

[0101] At least one second infrared reflective layer (25) should be able to receive more rays in order to improve the emissivity value directly proportional to the heat reflectance level. The way to increase the amount of reflected rays is opened in this way. Table-1 and Table-2 show this situation with examples that do not limit the scope of protection of the invention.

[0102] The scope of protection of the invention is specified in the attached claims and cannot be limited to those explained for sampling purposes in this detailed description. It is evident that a person skilled in the art may exhibit similar embodiments in light of above-mentioned facts without departing from the main theme of the invention.

Claims

CLAIMS A glass (10) having low-e coating (20), characterized in that; said low-e coating (20) comprises the following from the glass (10) outwardly, respectively;- A first dielectric layer (211 ) selected from SixNy, SiOxNy, ZnSnOx, TiOx, TiNx, ZrNx;- A second dielectric layer (212) selected from TiOx, ZrOx, NbOx;- A first seed layer (213) selected from NiCr, NiCrOx, TiOx, ZnAIOx, ZnSnOx, ZnOx;A first infrared reflective layer (22);- A first barrier layer (23) selected from NiCr, NiCrOx, Ti, TiOx, ZnAIOx, ZnOx;- A third dielectric layer (241 ) selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx;- A fourth dielectric layer (242) selected from SixNy, TiNx, ZrNx, ZnSnOx, ZnAIOx, SiOxNy, TiOx, ZnOx;- A second seed layer (243) selected from NiCr, NiCrOx, TiOx, ZnSnOx, ZnAIOx, ZnOx;- A second infrared reflective layer (25);- A second barrier layer (26) selected from NiCr, NiCrOx, Ti, TiOx, ZnAIOx, ZnOx- A fifth dielectric layer (271 ) selected from ZnSnOx, ZnAIOx, SiOxNy, ZrOx, SiOx, SixNy, TiOx, ZnOx;- An upper dielectric layer (272) comprising SiOxNy. A glass having low-e coating according to claim 1 , characterized in that the thickness of the second infrared reflective layer (25) is greater than the thickness of the first infrared reflective layer (22). A glass having low-e coating according to claim 2, characterized in that the ratio of the thickness of the second infrared reflective layer (25) to the thickness of the first infrared reflective layer (22) is between 1 .0 and 1 .

7. A glass having low-e coating according to claim 1 , characterized in that said second barrier layer (26) comprises ZnAIOx. A glass having low-e coating according to claim 1 , characterized in that it comprises the following;- A first dielectric layer (211 ) comprising SixNy;- A second dielectric layer (212) comprising TiOx;- A first seed layer (213) comprising ZnAIOx;A first infrared reflective layer (22) comprising Ag;- A first barrier layer (23) comprising NiCrOx;A third dielectric layer (241 ) comprising ZnAIOx;- A fourth dielectric layer (242) comprising SixNy;- A second seed layer (243) comprising ZnAIOx;- A second infrared reflective layer (25) comprising Ag;- A second barrier layer (26) comprising ZnAIOx;A fifth dielectric layer (271 ) comprising ZnAIOx;- A upper dielectric layer (272) comprising SiOxNy. A glass having low-e coating according to any of the preceding claims, said low-e coating (20) characterized by the following from the glass (10) outwardly, respectively; the first dielectric layer (21 1 ) comprising SixNyis in the thickness range of 5 nm - 18 nm; the second dielectric layer (212) comprising TiOxis in the thickness range of 3 nm- 20 nm; the first seed layer (213) comprising ZnAIOxis in the thickness range of 3 nm - 25 nm; the first infrared reflective layer (22) comprising Ag is in the thickness range of 6 nm - 20 nm; the first barrier layer (23) comprising NiCrOxis in the thickness range of 1.3 nm - 2.5 nm; the third dielectric layer (241 ) comprising ZnAIOxis in the thickness range of 1 1 nm - 27 nm;- the fourth dielectric layer (242) comprising SixNyis in the thickness range of 35 nm - 55 nm; the second seed layer (243) comprising ZnAIOxis in the thickness range of 1 1 nm- 27 nm;- the second infrared reflective layer (25) comprising Ag is in the thickness range of 6 nm - 20 nm;- the second barrier layer (26) comprising ZnAIOxis in the thickness range of 2.5 nm - 3.8 nm; the fifth dielectric layer (271 ) comprising ZnAIOxis in the thickness range of 11 nm- 28 nm;- the upper dielectric layer (272) comprising SiOxNyis in the thickness range of 10 nm - 30 nm.A glass having low-e coating according to any of the preceding claims, said low-e coating (20) characterized by the following from the glass (10), outwardly respectively; the first dielectric layer (21 1 ) comprising SixNyis in the thickness range of 5 nm - 15 nm; the second dielectric layer (212) comprising TiOxis in the thickness range of 4 nm- 18 nm; the first seed layer (213) comprising ZnAIOxis in the thickness range of 4 nm - 23 nm; the first infrared reflective layer (22) comprising Ag is in the thickness range of 7 nm - 19 nm; the first barrier layer (23) comprising NiCrOxis in the thickness range of 1 .5 nm - 2.3 nm; the third dielectric layer (241 ) comprising ZnAIOxis in the thickness range of 15 nm - 20 nm; the fourth dielectric layer (242) comprising SixNyis in the thickness range of 40 nm- 52 nm; the second seed layer (243) comprising ZnAIOxis in the thickness range of 13 nm- 25 nm;- the second infrared reflective layer (25) comprising Ag is in the thickness range of 7 nm - 19 nm;- the second barrier layer (26) comprising ZnAIOxis in the thickness range of 2.7 nm - 3.5 nm; the fifth dielectric layer (271 ) comprising ZnAIOxis in the thickness range of 13 nm- 25 nm;- the upper dielectric layer (272) comprising SiOxNyis in the thickness range of 12 nm - 27 nm.17

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