Dilution device for epitaxial doping gas

EP4361323A4Pending Publication Date: 2025-04-16SHANGHAI JINGMENG SILICON CORP
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Patent Information

Application Number
EP2022827001
Authority / Receiving Office
EP · EP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2021-06-23
Filing Date
2022-02-16
Publication Date
2025-04-16

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Abstract

The invention relates to a diluting device for epitaxial doping gas, comprising a first pipeline through which doping gas passes, a concentration detection mechanism and a first flow control mechanism being provided on the first pipeline; and a controller, signally connected to the concentration detection mechanism and the first flow control mechanism. Diluted doping gas provided by the diluting device disclosed in the present invention has a stable concentration, ensuring the obtained epitaxial layer has a stable resistivity.
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Citation Information

Patent Citations

  • Film formation device and manufacturing method of semiconductor device

    JP2019129298A

  • Semiconductor epitaxial wafer manufacturing equipment and dopant gas dilution equipment

    JP4089816B2

  • Methods of depositing electrically active doped crystalline Si-containing films

    US20060205194A1

  • Vapor accumulator for corrosive gases with purging

    WO2020236844A1