Acoustic induction-type semiconductor element and acoustic element integrated circuit

EP4422209A4Pending Publication Date: 2025-11-12SILICON & SYST CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
EP2022883275
Authority / Receiving Office
EP · EP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2021-10-21
Filing Date
2022-09-16
Publication Date
2025-11-12

AI Technical Summary

Technical Problem

Capacitive acoustic-elements face challenges in achieving high sensitivity and miniaturization for high-definition imaging due to limitations in capacitance utilization and assembly of receiving circuits, with earlier designs struggling to improve reception sensitivity and effectively reduce element size.

Method used

The development of an acoustic induction-type (AI) semiconductor element with a channel-generating region, main-electrode regions, and a vibration electrode, configured to create a hermetically confined space within a vibration-cavity, where displacements are detected as changes in current flowing between the main-electrode regions, enabling higher sensitivity and integration density.

Benefits of technology

This solution allows for higher sensitivity and effective miniaturization of AI semiconductor elements, enabling high-definition imaging by detecting changes in current rather than capacitance, thereby improving reception sensitivity and facilitating high integration density on a common substrate.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure IMGAF001_ABST
    Figure IMGAF001_ABST
Patent Text Reader

Abstract

[Problem] To provide an AI semiconductor element, which has a high sensitivity for smaller element size, and an AEIC. [Solution] AI semiconductor element encompasses a p-type channel-generation region (14); n-type first and second main electrode regions (15b, 15a)buried in the channel-generation region (14); gate insulating films (12, 16) disposed on the channel-generation region (14) sandwiched by the first and second main electrode regions; a main floating electrode (17c) in a floating state, provided on the gate insulating films; fixed-potential electrodes (17o) located adjacently to the main floating electrode (17c), being set to a first potential; a vibration membrane (23) opposed to the first and fixed-potential electrodes via a vibration cavity; and a vibration electrode (25c) in contact with the upper surface of the vibration membrane (23), is opposed to the fixed-potential electrodes via the vibration cavity, being set to a second potential.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Capacitive transducer and information acquisition device with the same

    JP2017085257A

  • Ultrasonic transducer element, method for manufacturing same, and ultrasonic image pickup device

    WO2016194208A1