Superconductor radiofrequency connection component

Abstract

The invention relates to a configurable electronic connection component produced on a substrate and intended to operate as a switch and / or an attenuator. The electronic component comprises a stack of layers comprising: a first layer made of a first cuprate superconductor, a second layer made of a second material which is more electronegative than the first material and deposited on the first layer; a third layer made of an electrically conductive material deposited on the second layer to form a control electrode; the first layer exhibiting variable resistivity depending on the mole fraction of oxygen in the first material.

Description

DESCRIPTION Title of the invention: Superconducting radiofrequency connection component

[0001] The present invention relates to the field of transmission and reception of radiofrequency (RF) signals and in particular to a connection component integrated in a transmission device and intended for operation as a switch and / or attenuator. More particularly, the invention relates to a component made with a superconducting material for a transmission device operating at cryogenic temperatures.

[0002] RF signal transmission devices made by microstructures and nanostructures on a substrate generally comprise a plurality of signal transmission tracks. Each transmission track constitutes a waveguide for confining and guiding electromagnetic waves from a transmission point to a reception point. Generally, the transmission devices comprise a network of connection components between the different microstructures that compose it, making it possible to configure its operation.

[0003] An example of a connection component is an RF switch. RF switches are used to enable or disable transmission in a selected transmission path. This allows the flow of information to be controlled by activating one transmission path and deactivating other transmission paths. As an example of how RF switches work, deactivating a transmission path is achieved by short-circuiting it to electrical ground through a dedicated RF switch.

[0004] Another example of connection components is RF attenuators. These are components that reduce the power of a signal transmitted through a transmission path without distorting the electromagnetic wave.

[0005] In the field of radio frequency transmission, the commonly used connection components are PIN type diodes (from the English Positive Intrinsic Negative diodes). This technology requires the injection of a bias current (of the order of 10mA for each diode) through the diode continuously. The bias currents of the PIN diode network induce energy losses through thermal dissipation by the Joule effect.

[0006] More specifically, in the context of a transmission device operating at cryogenic temperatures, this heat dissipation poses a problem. Indeed, it is necessary to maintain the transmission device at a low operating temperature using a cooling system. The bias currents of the connecting components heat the transmission device, which increases the energy consumption of the cooling system. The energy expended by the cooling system to compensate for the thermal losses associated with the bias of the connecting components represents a large part of the overall cooling energy budget.

[0007] Thus, there is a need to reduce the energy consumption due to the polarization of the connection components in an RF signal transmission device and more particularly in the context of operation at cryogenic temperatures.

[0008] We will begin by introducing the solutions known to those skilled in the art presenting alternative technologies to PIN diodes for producing connection components.

[0009] A first known solution concerns the production of connection components by MEMS (Micro-Electro-Mechanical System). This solution has the disadvantage of a considerable degradation of insulation performance and insertion losses for low temperatures. In addition, the manufacturing process of MEMS components is complex and expensive. In addition, MEMS connection components in turn require a bias current during operation of the transmission device.

[0010] A second known solution involves the production of connection components using GaN HEMT transistors. This solution has the disadvantage of poor isolation in the blocking state for high frequencies. This makes GaN HEMT technology incompatible with radio frequency (RF) signal transmission devices.

[0011] A third known solution involves the production of connection components using structures based on Germanium Telluride. This material has a crystalline phase and an amorphous phase depending on the applied temperature. To switch from one phase to another, it is necessary to resort to a succession of heating and cooling steps. Thus, this solution has the disadvantage of a considerable increase in energy consumption due to the heating and cooling cycles. In addition, the heating temperature can reach 200°C, which makes this solution incompatible with the context of operation at cryogenic temperatures.

[0012] To overcome the limitations of existing solutions with regard to limiting the energy consumption induced by the connection components in an RF signal transmission device, the invention proposes a configurable connection component for controlling the flow of signals in an RF signal transmission device. The component according to the invention is made by a stack of layers comprising a layer of a superconducting cuprate material. The superconducting cuprate layer has three configurable conductivity states: the first state is a superconducting state, the second state is an insulating state and the third state is an intermediate resistive state. The different conductivity states are remanent and reversible. Thus, the component according to the invention does not require the application of a supply voltage (or current) to maintain its conductivity state.The remanence of the conductivity states of the connection component according to the invention thus makes it possible to solve the problem of energy consumption due to the polarization of the connection components in an RF signal transmission device.

[0013] The device according to the invention allows for switch operation by switching between the superconducting state (on switch) and the insulating state (off switch). Superconductivity provides a better connection in the on state than the semiconductor materials used in state-of-the-art solutions.

[0014] The device according to the invention allows operation as an attenuator to be obtained by varying its electrical resistance continuously when it is in the intermediate resistive state.

[0015] The device according to the invention also has the advantage of stability of the physical phase (solid, liquid, gas) since it remains in the solid state for all conductivity states.

[0016] The invention further relates to a method for manufacturing a waveguide on a substrate comprising at least one connection component according to the invention. The manufacturing method is compatible with microelectronic integrated circuit manufacturing techniques. This has the advantage of simplicity of implementation of the method by the production lines of the semiconductor industry. Thus, the method according to the invention has reduced implementation and manufacturing costs compared to the alternative solutions previously discussed.

[0017] The subject of the invention is a configurable electronic connection component, produced on a substrate, and intended for operation as a switch and / or attenuator, said electronic component comprising a stack of layers comprising: - a first layer of a first superconducting cuprate type material, - a second layer made of a second material more electronegative than the first material and deposited on the first layer; - a third layer made of an electrically conductive material and deposited on the second layer forming a control electrode; Said first layer having a variable resistivity depending on the molar fraction of oxygen in said first material so as to obtain one of the following conductivity states: a superconducting state or an insulating state or an intermediate resistive state. The first material exhibiting residual conductivity states.

[0018] According to a particular aspect of the invention, the first material has reversible conductivity states.

[0019] According to a particular aspect of the invention, the first material is in the solid state for each conductivity state.

[0020] According to a particular aspect of the invention, the thickness of the first layer is between 50 nm and 700 nm.

[0021] According to a particular aspect of the invention, the thickness of the second layer is between 2 nm and 50 nm.

[0022] According to a particular aspect of the invention, the electronic component further comprises a fourth layer of a dielectric material confined between the second layer and the third layer.

[0023] According to a particular aspect of the invention, the thickness of the fourth layer is greater than 100nm.

[0024] According to a particular aspect of the invention, the first material is YBa2Cu3O?-5 or Bi2Sr2CaiCu2O8-5 or NdBa2Cu3O7-5, with 5 the variation of the mole fraction of oxygen in the first layer.

[0025] According to a particular aspect of the invention, the second material is chosen from aluminum or silver or Yttrium or Gold or Molybdenum or Silicon.

[0026] According to a particular aspect of the invention, the substrate is made of sapphire or MgO or SrTiO3 or Silicon.

[0027] According to a particular aspect of the invention, the electronic component further comprises a buffer layer confined between the substrate and the first layer when the substrate is made of silicon.

[0028] According to a particular aspect of the invention, the buffer layer is made of cerium oxide or yttrium-stabilized zirconia.

[0029] According to a particular aspect of the invention, the stack of layers forms a parallelepiped having a base of length greater than 10 pm.

[0030] The invention also relates to a device for transmitting radio frequency signals produced on a substrate comprising: - a first microstructure configured to propagate a radiofrequency signal; - a second microstructure connected to an electrical ground voltage; - an electronic connection component according to the invention such that: o the first microstructure is connected to the second microstructure via the first layer of the component; o the control electrode is configured to receive a control signal making it possible to control the conductivity states of the first layer.

[0031] According to a particular aspect of the invention, the transmission device further comprises control means configured to generate the control signal according to two configurations: a first configuration making it possible to obtain the superconducting state of the first layer so as to short-circuit the first microstructure with the second microstructure; and a second configuration making it possible to obtain the insulating state of the first layer so as to electrically isolate the first microstructure from the second microstructure. The electronic component having a switch function.

[0032] According to a particular aspect of the invention, the transmission device further comprises control means configured to generate the control signal so as to vary the variable resistivity of the electronic component over a range of values ​​corresponding to the intermediate resistive state. The electronic component having an attenuator function.

[0033] According to a particular aspect of the invention, the first microstructure and the second microstructure each comprise: - a guide structure made with the first superconducting cuprate material; - a metallic layer deposited on the guide structure forming a power supply electrode.

[0034] The invention also relates to a method for manufacturing a device for transmitting radio frequency signals comprising the following steps: a) manufacturing at least one first microstructure and one second microstructure and at least one first layer connecting said microstructures. the first layer being made of a first superconducting cuprate material. b) depositing, on each first layer, a second layer made of a second material more electronegative than the first material. c) depositing, on each second layer, a third layer made of an electrically conductive material. Each stack of the first, second and third layer forming a configurable electronic connection component connecting two adjacent guide structures.

[0035] According to a particular aspect of the invention, step a) comprises the following sub-steps: i- depositing an intermediate layer of the first superconducting cuprate type material distributed on a substrate; ii- depositing an intermediate metal layer on the intermediate layer of the first material; iii- selectively etching the metal layer to produce at least two power supply electrodes; iv- selectively etching the layer of the first material to: o produce, for each power supply electrode, a guide structure composed of the first material; o and produce, between at least two adjacent guide structures, at least one first layer connecting said two adjacent guide structures; each microstructure comprising: a guide structure produced with the first material and a power supply electrode.

[0036] Other features and advantages of the present invention will become more apparent upon reading the following description in relation to the following appended drawings.

[0037] [Fig. 1 a] Figure 1 a illustrates a perspective view of a first embodiment of the connection component according to the invention.

[0038] [Fig. 1 b] Figure 1 b illustrates a sectional view of the first embodiment of the connection component according to the invention.

[0039] [Fig. 1 c] Figure 1 c illustrates a top view of the first embodiment of the connection component according to the invention.

[0040] [Fig. 2a] Figure 2a illustrates a sectional view of a second embodiment of the connection component according to the invention.

[0041] [Fig. 2b] Figure 2b illustrates a sectional view of a third embodiment of the connection component according to the invention.

[0042] [Fig. 3a] Figure 3a illustrates a perspective view of a first embodiment of an RF signal transmission device comprising a connection component according to the invention.

[0043] [Fig. 3b] Figure 3b illustrates a top view of the first embodiment of an RF signal transmission device comprising a connection component according to the invention.

[0044] [Fig. 4] Figure 4 illustrates a perspective view of a second embodiment of an RF signal transmission device comprising a connection component according to the invention.

[0045] [Fig. 5] Figure 5 illustrates the variation in attenuation of an RF signal transmission device when the connection component according to the invention operates as an attenuator.

[0046] [Fig. 6] Figure 6 illustrates a method of manufacturing the first embodiment of an RF signal transmission device

[0047] Figure 1a illustrates a perspective view of a first embodiment of the connection component 10 according to the invention in a reference frame (x, y, z). The connection component 10 is produced by a stack of thin layers on a substrate SUB. The axis of the component A is the axis perpendicular to the horizontal plane (x, y) formed by the upper surface of the substrate SUB. The connection component 10 comprises the following layers starting from the substrate, in the direction of the axis of the component A: a first layer C1 made of a superconducting material; a second layer C2 made of a material more electronegative than the superconducting material and a third layer C3 made of an electrically conductive material.

[0048] Advantageously, the substrate is made of sapphire or MgO or SrTiO3 or Silicon. Thus, the connection component 10 can be produced via a process compatible with the manufacturing processes of the semiconductor industry.

[0049] The first layer C1 constitutes the active zone of the connection component 10. The first layer C1 is made of a first material of the superconducting cuprate type. Superconducting cuprates are “high critical temperature superconductors” consisting of layers of copper oxide CuO2 alternating with layers of charge reservoirs which are oxides of other metals. The term “high critical temperature superconductor” means a material having a critical superconductivity temperature T c relatively high compared to conventional superconductors (greater than 30K).

[0050] Generally speaking, a superconducting cuprate material has a variable resistivity depending on the mole fraction of oxygen in the chemical composition of the material. The sensitivity of the resistivity to the mole fraction of oxygen is significantly higher in cuprates compared to other superconducting materials. For a given operating temperature, this characteristic makes it possible to obtain the following conductivity states in the first layer C1: a superconducting state or an insulating state or an intermediate resistive state.

[0051] The superconducting state corresponds to a quasi-zero electrical resistance of the first layer C1. The insulating state corresponds to a very high electrical resistance of the first layer C1. In the intermediate resistive state, the resistance is continuously variable according to the variation of the molar fraction of oxygen in the chemical composition of the first material.

[0052] The conductivity states of the first superconducting cuprate material are remanent states. Thus, the conductivity state is maintained without the need for continuous application of a supply voltage (or current). The connection component 10 is non-volatile and its power consumption is reduced.

[0053] The conductivity states of the first cuprate superconducting material are reversible states. This allows switching from one conductivity state to another.

[0054] The conductivity states of the first superconducting cuprate material always correspond to a solid physical state. This stability of the physical state of the first material allows its integration into a thin-film stack component.

[0055] As non-limiting examples, the first layer C1 is made with YBa2Cu3O?-5 (or YBCO) or Bi2Sr2CaiCu2O8-5 or NdBa2Cu3O7-5, with 5 a positive real number presenting the variation of the molar fraction of oxygen in the first layer C1. For a given operating temperature, when 5 is less than a first limit value, the first material is in the superconducting state. For a given operating temperature, when 5 is greater than a second limit value, the first material is in the superconducting state. When 5 is between the first limit value and the second limit value, the first material is in the intermediate resistive state. For example, for a layer C1 in YBCO at an operating temperature T=70K, the first limit value is equal to 0.3 and the second limit value is equal to 0.6.

[0056] The sensitivity of the resistivity of the first material to the mole fraction of oxygen in its chemical composition is exploited to realize the configurable active zone of the connection component 10.

[0057] The second layer C2 is deposited directly on the first layer C1. The second layer C2 is made of a second material that is more electronegative than the first material. The electronegativity of a material is its ability to attract negative charge carriers. As non-limiting examples, the second layer C2 is made of aluminum or silver or yttrium or gold or molybdenum or silicon.

[0058] The third layer C3 is deposited on the second layer C2. The third layer C3 is made of an electrically conductive material to form a control electrode EL3 receiving a control voltage V c . As a title for example, the control voltage V cis in the form of a square pulse defined by an amplitude and an application duration.

[0059] In the following, we will explain the operating mechanism of the stacking of layers C1 / C2 / C3 to obtain a configurable connection component 10. When a control voltage V cWhen a positive voltage is applied to the control electrode EL3, an electric field is created across the stack of layers C1 / C2 / C3. The electric field induces the creation of oxygen vacancies and induces a movement of negative oxygen ions from the crystal lattice of the first layer C1 to the interface with the second layer C2. The second layer C2 is more electronegative than the first layer C1; therefore the negative oxygen ions from the first layer C1 are absorbed by the second layer C2. Thus, the mole fraction of oxygen in the first layer C1 is modified. This results in an increase in the resistivity of the first layer C1 by the action of the control voltage V c applied to the control electrode EL3. Conversely, when a control voltage V c negative is applied to the control electrode EL3, the resistivity of the first layer C1 decreases by the reverse mechanism.

[0060] As illustrated, the first layer C1 has a width 11 and a length L1; the second layer C2 has a width I2 and a length L2; and the third layer C3 has a width I3 and a length L3. The illustrated dimensioning example has equal widths 11, I2 and I3 to simplify the manufacturing process. For a given conductivity state, the conductivity of the first layer C1 increases with the width 11 of said layer. The length L1 of the first layer C1 is greater than those of the layers C2 and C3 so as to obtain two ends of the first layer C1 which extend beyond the stack of layers C1 / C2 / C3. The first end forms a first connection electrode EL1. The second end forms a first connection electrode EL2. A connection component 10 is thus obtained having a control electrode EL3 intended to receive the control voltage V c and two connection electrodes EL1 and EL2.

[0061] The case is described where the connection component 10 is intended for operation as a switch. The control voltage V c has a sufficiently high amplitude and / or duration to cause the switching of the first layer C1 between the extreme conductivity states: a superconducting state or an insulating state. This gives a configurable switch operation. By analogy with the operation of a CMOS transistor, the control electrode EL3 plays the role of the gate; the connection electrodes EL1 and EL2 play the role of the source and the drain.

[0062] The case is described where the connection component 10 is intended for operation as an attenuator. The control voltage V chas an amplitude and / or duration chosen in order to gradually vary the resistivity of the first layer C1 through the three conductivity states. This results in operation as a continuously variable impedance attenuator.

[0063] To better understand the dimensioning of the connection component 10, Figure 1 b illustrates a sectional view in the (x,z) plane of the first embodiment of the connection component 10. The first layer C1 has a thickness e1, the second layer C2 has a thickness e2 and the third layer has a thickness e3.

[0064] Advantageously, the thickness e1 of the first layer C1 is greater than 50nm to ensure mechanical robustness of the layer deposited by epitaxy. Indeed, if the first layer C1 is not sufficiently thick, it would present mechanical fragilities. In addition, this makes it possible to maintain the critical superconductivity temperature T cfrom the first layer to a high value.

[0065] Advantageously, the thickness e1 of the first layer C1 is less than 700nm to avoid obtaining a rough upper surface. Indeed, if the upper surface of the first layer C1 is rough, the interface between the first layer C1 and the second layer C2 would present surface adhesion defects during deposition. These defects reduce the electrical performance of the connection component and reduce its mechanical robustness. Moreover, surface defects in the form of protrusions can create a local concentration of electric fields with risks of destruction of the layer. In addition, the protrusions can create discontinuities in the second layer C2. The discontinuities induce short circuits at the interface between the two layers C1 and C2.

[0066] Advantageously, the thickness e2 of the second layer C2 is greater than 2 nm to ensure sufficient oxygen ion attraction power. This is necessary to achieve the function of "pumping" oxygen ions from the first layer C1. In addition, a second layer C2 that is too thin has an irregular structure during deposition with a risk of creating areas of mechanical and electrical fragility.

[0067] Advantageously, the thickness e2 of the second layer C2 is less than an upper limit value to avoid obtaining irreversible conductivity states. Indeed, if the second layer C2 is too thick, said layer will have a very high potential for attracting oxygen ions. The control voltage risks becoming ineffective in controlling the conductivity state of the first layer C1. There is thus a risk of remaining stuck in an insulating conductivity state for a very thick second layer C2. The sizing of the second layer thus depends on the electronegativity of the second material that constitutes it. For example, in the case of silver, the thickness e2 of the layer C2 is between 2nm and 50nm. In the case of aluminum, which is more electronegative than silver, the thickness e2 of the layer C2 is between 2nm and 10nm.

[0068] Figure 1 c illustrates a top view of the first embodiment of the connection component 10. The stack of layers C1 / C2 / C3 has a “mesa” structure resting on the first layer C1 with an equal width for the three layers which constitute said structure. Generally speaking, the greater the width of the structure, the less resistive the structure is. Advantageously, the width of the three layers 11 = 12 = 13 is chosen to be equal to 10 μm. The length L1 of the first layer C1 is greater than those of the second and third layers in order to produce the two connection electrodes EL1 and EL2.

[0069] Figure 2a illustrates a sectional view of a second embodiment of the connection component 11. In this embodiment, the stack of layers of the connection component 11 further comprises a fourth layer C4 of dielectric material. The fourth layer is confined between the second layer C2 and the third layer C3. The advantage of inserting the fourth dielectric layer C4 is to avoid the injection of intense currents at from the control electrode EL3 in the structure of the connection component 11. By analogy, said dielectric layer plays a role similar to the oxide layer at the gate of a CMOS transistor. This layer thus increases the reliability of the component and its technological robustness and thus extends its lifetime. For example, the fourth layer C4 is made of silicon dioxide, aluminum oxide or silicon nitride. Advantageously, the thickness e4 of the fourth layer C4 is greater than 100nm to protect the first layer C1 and the second layer C2 from strong currents coming from the control electrode during the application of a control voltage.

[0070] Figure 2b illustrates a sectional view of a third embodiment of the connection component 12. The substrate SUB is made of silicon in this embodiment. The stack of layers of the connection component 12 further comprises a CT buffer layer confined between the substrate SUB and the first layer C1. The CT transition layer makes it possible to achieve an adaptation of the crystal lattice of the first material of the first layer C1 with that of the substrate during epitaxial growth. Advantageously, the CT buffer layer is made of cerium oxide or yttrium-stabilized zirconia. In addition, the CT buffer layer makes it possible to chemically isolate the first layer C1 from the substrate SUB.

[0071] We have described the second embodiment and the third embodiment separately for the sake of clarity. A fourth embodiment is conceivable in which the connection component comprises the following stack of layers starting from the substrate: the buffer layer CT, the first layer C1 of superconducting material, the second layer C2 of a material more electronegative than that of the first layer, the fourth layer C4 of dielectric, the third layer C3 forming the control electrode.

[0072] Figure 3a illustrates a perspective view of a first embodiment of an RF signal transmission device, denoted 1, comprising at least one connection component according to the invention.

[0073] The device 1 for transmitting radiofrequency signals is produced on the substrate SUB. The device 1 comprises: a first microstructure 20 configured to propagate a radiofrequency signal Vs, two microstructures of electrical ground 30 and 30' each being connected to the overall electrical ground of the device 1, and a plurality of connection components 10 according to the invention. The first microstructure 20 constitutes a transmission track and the two microstructures 30 and 30' constitute ground tracks. The transmission track 20 is arranged between the two ground tracks 30 and 30'. By way of illustration and without loss of generality, the device 1 comprises four connection components 10. The transmission track 20 is connected to the first adjacent ground track 30 through two connection components 10. The transmission track 20 is connected to the second adjacent ground track 30' through two connection components 10.

[0074] Advantageously, the substrate is made of sapphire or MgO or SrTiO3 or silicon.

[0075] The device 1 further comprises control means (not shown here) for generating the control signals (V c i, V c2 V c3 V c4) associated respectively with each connection component 10. For example, the different connection components 10 make it possible to activate or deactivate the transmission of the signal Vs through the transmission track 20. When the connection components 10 are configured by the control signals to an insulating resistive state, the transmission track 20 is electrically isolated from the adjacent ground tracks 30 and 30'. The transmission is activated and the signal Vs is then propagated through the transmission track 20 to the reception point. When the connection components 10 are configured by the control signals to a superconducting resistive state, the transmission track 20 is electrically connected to the adjacent ground tracks 30 and 30'. The transmission is deactivated and the signal Vs is not propagated through the transmission track 20 to the reception point.

[0076] Alternatively, the various connection components 10 make it possible to attenuate the signal Vs transmitted through the transmission track 20. The connection components 10 are configured by the control signals to an intermediate resistive state. Thus, the impedance of the connection components 10 is continuously variable in the range of values ​​defining the intermediate resistive state. This makes it possible to control the attenuation of the amplitude of the transmitted signal Vs.

[0077] Figure 3b illustrates a top view of the first embodiment of an RF signal transmission device comprising a plurality of connection components 10. We limit ourselves to presenting the transmission device 1 from one side only in the propagation direction PROP for the sake of simplification.

[0078] The transmission track 20 comprises a guide structure 20 made of an electrically conductive material. The guide structure 20 serves to confine and propagate the electromagnetic waves of the propagated signal Vs towards the reception point in the propagation direction PROP.

[0079] The transmission track 20 further comprises a power supply electrode 22 made of an electrically conductive material deposited on the guide structure 20. In the illustrated case, the power supply electrode 22 is deposited at the end of the transmission track 20 on the reception point side. The power supply electrode 22 is configured to provide the propagated signal Vs to a reception terminal not shown here. Symmetrically, when the power supply electrode 22 is deposited at the end of the transmission track 20 on the transmission point side, it is configured to receive the propagated signal Vs generated by a transmission terminal.

[0080] The ground track 30 comprises a guide structure 31 made of a conductive material and a power supply electrode 32 configured to receive the electrical ground voltage of the device. The ground track 30' is identical to the ground track 30.

[0081] Generally speaking, to connect a first structure 20 to an adjacent second structure 30 via a connection component 10, said component is arranged in the following manner: the first connection electrode EL1 is brought into contact with the guide structure 21 of the first structure 20 and the second connection electrode EL2 is brought into contact with the guide structure 31 of the first structure 30. The connection between the first structure 20 and the second structure 30' adjacent on the other side is made in the same manner.

[0082] Advantageously, the guide structures 21, 31 and 31' are made with the same superconducting material used to make the first layer C1 of each connection component 10. This makes it possible to exploit the superconductivity of the first material for more efficient transmission. In addition, this makes it possible to produce the first layer C1 of each connection component and the guide structures 21, 31 and 31' from the same layer of the superconducting material. The manufacturing process of the radiofrequency signal transmission device 1 is thus simplified and costs are reduced.

[0083] Figure 4 illustrates a perspective view of a second embodiment of a device 2 for transmitting RF signals comprising a connection component 10 according to the invention.

[0084] The transmission device 2 comprises a transmission track 20, a connection component 10 according to the invention and a microstructure 40 in the form of a “mesa”. The microstructure 40 is produced by stacking a first layer 41 produced with the first superconducting material, and a metal layer 42 forming a power supply electrode. The transmission track 20 of the second embodiment is identical to that of the first embodiment.

[0085] The microstructure 40 is connected to the transmission track 20 through the connection component 10. The first connection electrode EL1 is brought into contact (or continuity) with the guide structure 21 and the second connection electrode EL2 is brought into contact (or continuity) with the first layer 41 of the microstructure 40.

[0086] The transmission track 20, the connection component 10 and the microstructure 40 are produced on a first face SUB_a of the substrate SUB. The transmission device 2 further comprises a metal ground plane 50 deposited on the opposite face SUB_b of the substrate SUB. Advantageously, the substrate is made of sapphire or MgO or SrTiO3 or silicon. The power supply electrode of the structure 40 is electrically connected to the ground plane 50 for example by means of a wire 51 produced by the technique known as “wire bonding”.

[0087] Thus, it is possible to activate or deactivate the transmission through the transmission track 20 by configuring the conductivity state of the connection component 10 between an insulating or superconducting state.

[0088] Alternatively, it is possible to attenuate the signal Vs transmitted through the transmission track 20. The connection components 10 are configured by the control signals to an intermediate resistive state. Thus, the impedance of the connection components 10 is continuously variable in the range of values ​​defining the intermediate resistive state. This makes it possible to control the attenuation of the amplitude of the transmitted signal Vs.

[0089] As an example, Figure 5 illustrates the variation in the attenuation of the RF signal transmission device 10 when the connection component 10 is configured for operation as an attenuator.

[0090] When the connection component 10 is configured in a superconducting state ES, the connection track 20 is short-circuited with the electrical ground and an attenuation greater than 40 dB and up to 50 dB is observed. The connection component resistance is of the order of 1 mΩ. Thus, the connection component 10 has better performance compared to PIN diodes and Germanium Telluride-based structures while consuming less power.

[0091] When the connection component 10 is configured in an intermediate resistive state ER, the resistance covers a wide variation range from 1 mΩ to 80Ω. This provides access to a continuum of resistance values ​​to configure the attenuation precisely.

[0092] When the connection component 10 is configured in an insulating state E1, the connection track 20 is isolated from the electrical ground and an attenuation of less than 3dB is observed. The connection component resistance is of the order of 100Ω. Thus, the connection component 10 has insulation comparable to PIN diodes while consuming less power.

[0093] Figure 6 illustrates a manufacturing method of the first embodiment of the transmission device 10 described previously. We start with a SUB substrate in the form of a wafer. To facilitate understanding of the process sequence, we illustrate for each step one or two sectional views of the result of the step carried out. The first sectional view corresponds to the cutting axis AA at the end of the transmission track such as illustrated in Figure 3b. The second sectional view corresponds to the section axis BB at a connection component as illustrated in Figure 3b.

[0094] The first step (i) consists of depositing an intermediate layer C1 Jnt of the first superconducting cuprate material distributed over the entire surface of the SUB substrate. The deposition of the intermediate layer C1Jnt in superconducting cuprate is carried out by epitaxial growth for example.

[0095] The second step (ii) consists of depositing a CMYNT intermediate metal layer on the entire upper surface of the C1Jnt intermediate layer of the first material. The deposition of the CMYNT intermediate metal layer is carried out by sputtering or chemical vapor deposition for example.

[0096] The third step (iii) consists of selectively etching the metal layer to produce the power supply electrodes 22, 32 at the AA axis. The intermediate CMJnt metal layer is removed by etching the rest of the surface as illustrated in the section along the BB axis. The etching can be carried out using an ion beam etching technique, for example.

[0097] The fourth step (iv) consists of selectively etching the layer of the first material to produce, for each power supply electrode, a guide structure 21, 31 and 31' with the first superconducting material. The section along the axis AA shows the separation between the different guide structures 31, 21 and 31'. Simultaneously, this step makes it possible to produce, between at least two adjacent guide structures 21, 31 and 31', at least one first layer C1 connecting said two adjacent guide structures 21, 31 and 31' as illustrated by the sectional view along BB.

[0098] The fifth step (v) consists of reducing the thickness of the first C1 layers by ion beam etching, which provides greater etching precision. This is an optional step to obtain a flat surface. This step also ensures homogeneity of the variation of oxygen ions in the first C1 layers.

[0099] The sixth step (vi) consists of depositing, on each first layer C1, a second layer C2 in a second material more electronegative than the first material.

[0100] The seventh step (vii) consists of depositing, on each second layer C2, a third layer C3 made of an electrically conductive material in order to form the control electrodes EL3 of each connection component 10. This results in a configurable electronic connection component 10, connecting two adjacent guide structures, with each stack of the first, second and third layers.

[0101] All the steps of the method according to the invention are compatible with the usual microelectronic manufacturing techniques in the semiconductor industry. This makes it possible to reduce the cost of implementing and operating the manufacturing method according to the invention.

Claims

CLAIMS 1. Configurable electronic connection component (10), produced on a substrate (SUB), and intended for operation as a switch and / or attenuator, said electronic component (1) comprising a stack of layers comprising: - a first layer (C1) made of a first superconducting cuprate type material, - a second layer (C2) made of a second material more electronegative than the first material and deposited on the first layer (C1); - a third layer (C3) made of an electrically conductive material and deposited on the second layer (C2) forming a control electrode; said first layer (C1) having a variable resistivity depending on the molar fraction of oxygen in said first material so as to obtain one of the following conductivity states: a superconducting state (ES) or an insulating state (El) or an intermediate resistive state (ER); the first material having remanent conductivity states.

2. Electronic connection component (10) according to claim 1 in which the first material has reversible conductivity states.

3. Electronic connection component (10) according to any one of claims 1 or 2 wherein the first material is in the solid state for each conductivity state.

4. Electronic connection component (10) according to any one of the preceding claims in which the thickness of the first layer (C1) is between 50 nm and 700 nm.

5. Electronic connection component (10) according to any one of the preceding claims in which the thickness of the second layer (C2) is between 2 nm and 50 nm.

6. Electronic connection component (10) according to any one of the preceding claims further comprising a fourth layer (C4) in a dielectric material confined between the second layer (C2) and the third layer (C3).

7. Electronic connection component (10) according to the preceding claim in which the thickness of the fourth layer (C4) is greater than 100nm.

8. Electronic connection component (10) according to any one of the preceding claims in which the first material is YBa2Cu3O7-5 or Bi2Sr2CaiCu2O8-5 or NdBa2Cu3O7-5, with the variation of the molar fraction of oxygen in the first layer (C1).

9. Electronic connection component (10) according to any one of the preceding claims in which the second material is chosen from aluminum or silver or Yttrium or Gold or Molybdenum or Silicon.

10. Electronic connection component (10) according to any one of the preceding claims in which the substrate (SUB) is made of sapphire or MgO or SrTiO3 or Silicon. 1 1. Electronic connection component (10) according to the preceding claim further comprising a buffer layer (CT) confined between the substrate (SUB) and the first layer (C1) when the substrate (SUB) is made of Silicon.

12. Electronic connection component (10) according to the preceding claim in which the buffer layer is made of cerium oxide or zirconia stabilized with yttrium.

13. Electronic connection component (10) according to any one of the preceding claims such that the stack of layers forms a parallelepiped having a base of length greater than 10 pm.

14. Device (1) for transmitting radio frequency signals produced on a substrate (SUB) comprising: - a first microstructure (20) configured to propagate a radiofrequency signal (Vs); - a second microstructure (30, 30') connected to an electrical ground voltage (Vgnd); - an electronic connection component (10) according to any one of the preceding claims such that: o the first microstructure (20) is connected to the second microstructure (30, 30') via the first layer (C1) of the component; o the control electrode is configured to receive a control signal (Vc) making it possible to control the conductivity states of the first layer (C1); 15. Device (1) for transmitting radio frequency signals according to claim 14 further comprising control means configured to generate the control signal (Vc) according to two configurations: a first configuration making it possible to obtain the superconducting state of the first layer (C1) so as to short-circuit the first microstructure with the second microstructure; and a second configuration making it possible to obtain the insulating state of the first layer (C1) so as to electrically isolate the first microstructure from the second microstructure; the electronic component (10) having a switch function.

16. Device (1) for transmitting radio frequency signals according to claim 14 further comprising control means configured to generate the control signal (Vc) so as to vary the variable resistivity of the electronic component (10) over a range of values ​​corresponding to the intermediate resistive state (ER); the electronic component (10) having an attenuator function.

17. Device (1) for transmitting radio frequency signals according to any one of claims 14 to 16 in which the first microstructure (20) and the second microstructure (30, 30') each comprise: a guide structure (21, 31, 31') made with the first superconducting cuprate material; a metal layer deposited on the guide structure (21, 31, 31') forming a power supply electrode (22, 32, 32'); 18. Method (P1) for manufacturing a device (1) for transmitting radio frequency signals comprising the following steps: d) manufacturing at least one first microstructure (20) and one second microstructure (30, 30') and at least one first layer (C1) connecting said microstructures (20, 30, 30'); the first layer (C1) being made of a first superconducting cuprate type material; e) depositing, on each first layer (C1), a second layer (C2) made of a second material more electronegative than the first material; f) depositing, on each second layer (C2), a third layer (C3) made of an electrically conductive material; each stack of the first, second and third layers forming a configurable electronic connection component (1) connecting two adjacent guide structures; 19. Method (P1) for manufacturing a device (1) for transmitting radio frequency signals according to claim 18 in which step a) comprises the following sub-steps: v- depositing an intermediate layer (C1Jnt) of the first superconducting cuprate type material distributed on a substrate (SUB); vi- depositing an intermediate metal layer (CMJnt) on the intermediate layer (C1_int) of the first material; vii- selectively etching the metal layer to produce at least two power supply electrodes (22, 32); viii- selectively etching the layer of the first material to: o produce, for each power supply electrode, a guide structure (21, 31, 31 ') composed of the first material; o and producing, between at least two adjacent guide structures (21, 31, 31'), at least one first layer (C1) connecting said two adjacent guide structures (21, 31, 31'); each microstructure (20, 30, 30') comprising: a guide structure (21, 31, 31') produced with the first material and a power supply electrode (22, 32, 32').

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