Luminophore, process for producing a luminophore, use of a luminophore, and optoelectronic component

Abstract

The invention relates to a luminophore (1) with the sum formula Li8-2x-aMBx+cMFaMC1-c[MAMD4-z-bMEzMGbN4-z+b-cO8+z-b+c]:E, wherein 0≤x≤4, 0≤c≤1, 0≤z≤4, 0≤a≤8, 0≤b≤4, 0≤2x+a≤8, 0≤z+b≤4, - 4≤-z+b-c≤4. The invention also relates to a process for producing a luminophore, to the use of a luminophore, and to an optoelectronic component.

Description

[0001] 2023PF00709 July 1, 2024 P2023,0785 WO N - 1 - Description PHONOSURFACE, METHOD FOR PRODUCING A PHONOSURFACE, USE OF A PHONOSURFACE, AND OPTOELECTRONIC COMPONENT A phosphor, a method for producing a phosphor, a use of a phosphor, and an optoelectronic component are described. One object is to provide an improved phosphor. Furthermore, an efficient method for producing a phosphor is to be provided. In addition, a use and an efficient optoelectronic component, each comprising the phosphor, are to be provided. A phosphor is specified. The phosphor can be uncharged on the outside. This means that there can be a complete charge balance between positive and negative charges in the phosphor on the outside.However, it is also possible that the phosphor formally does not have complete charge balance to a small extent. With the specified compositions or molecular formulas, it is possible that the phosphor comprises further elements, for example in the form of impurities. Taken together, the impurities amount to a maximum of 1 per mille, in particular a maximum of 100 ppm (parts per million), for example a maximum of 10 ppm. In particular, these impurities are present in the phosphor in a proportion of a maximum of 5 mol%, 2023PF00709 July 1, 2024 P2023,0785 WO N - 2 - in particular a maximum of 1 mol%, for example a maximum of 0.1 mol%. Here and below, phosphors are described using compositions or molecular formulas. The elements listed in the compositions or molecular formulas are present in charged form.Here and in the following, elements and / or atoms in relation to the compositions or molecular formulas of the phosphors therefore mean ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols if, for the sake of clarity, these are mentioned without a charge number. According to at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of monovalent elements. The term “valence” in relation to a specific element means how many elements with a single opposite charge are required in a chemical compound to achieve charge balance. Thus, the term “valence” includes the charge number of the element. Elements with a valence of one are referred to as monovalent elements. Monovalent elements are often single-positively charged in chemical compounds and have a charge number of +1.Charge equalization in a chemical compound can, for example, take place via a further element that is singly negatively charged. In the present case, monovalent elements are generally selected 2023PF00709 July 1, 2024 P2023,0785 WO N - 3 - from the group formed by alkali elements and elements of the transition groups. According to at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of trivalent elements. Elements with a valence of three are referred to as trivalent elements. Trivalent elements are often triply positively charged in chemical compounds and have a charge number of +3. Charge equalization in a chemical compound can, for example, take place via three further elements, each of which is singly negatively charged, or via a further element that is triply negatively charged.Trivalent elements in the present case are generally selected from the group formed by elements of the transition groups, in particular the rare earth elements, and by elements of the 3rd main group. Here and in the following, the rare earth elements are understood to mean the following elements: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. According to at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of tetravalent elements. Elements with a valence of four are referred to as tetravalent elements. Tetravalent elements are often four times positively charged in chemical compounds and have a charge number of +4. Charge equalization in a chemical compound can, for example, take place via four further elements, each of which is singly negatively charged, or two further elements that are doubly negatively charged.Tetravalent elements in the present case are generally selected from the group formed by elements of main group 4 and by elements of the transition groups. According to at least one embodiment, the phosphor comprises oxygen and / or nitrogen. In particular, the oxygen is doubly negatively charged. In particular, the nitrogen is triply negatively charged. Oxygen and / or nitrogen serve, for example, to balance the charge for the monovalent elements, the trivalent elements, and the tetravalent elements. According to at least one embodiment, the phosphor comprises an activator element E. It is also possible for the phosphor to comprise a combination of activator elements. As a rule, the phosphor has a host structure into which foreign elements are introduced as activator elements. The activator element can absorb electromagnetic radiation of an excitation wavelength.It is possible that the electronic structure of the activator element is changed by the host structure. After the absorption of the electromagnetic radiation of the excitation wavelength, an electronic transition is excited in the phosphor, for example in the activator element or the host structure. By emitting electromagnetic radiation with an emission spectrum, the phosphor returns to the ground state. In accordance with at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of monovalent elements, an element or a combination of elements selected from the group of trivalent elements, an element or a combination of 2023PF00709 July 1, 2024 P2023,0785 WO N - 5 - elements selected from the group of tetravalent elements, oxygen and / or nitrogen, and an activator element E.According to at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of divalent elements. Elements with a valence of two are referred to as divalent elements. Divalent elements are often doubly positively charged in chemical compounds and have a charge number of +2. Charge balancing in a chemical compound can take place, for example, via two further elements, each of which is singly negatively charged, or via a further element that is doubly negatively charged. In this case, divalent elements are generally selected from the group formed by alkaline earth elements and by elements of the transition groups. According to at least one embodiment, the phosphor comprises an element or a combination of elements selected from the group of pentavalent elements. Elements with a valence of five are referred to as pentavalent elements.Pentavalent elements are often five times positively charged in chemical compounds and have a charge number of +5. Charge balancing in a chemical compound can, for example, take place via five other elements, each singly negatively charged, or one other element that is doubly negatively charged and another element that is triply negatively charged. Pentavalent elements are generally selected from the group consisting of elements of main group 5 and elements of the transition groups. According to at least one embodiment, the phosphor has the empirical formula Li. 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E. All statements relating to the phosphor described by its molecular formula also apply to the phosphor described solely by its composition, and vice versa. The square brackets indicate in particular that MA, MD, ME, MG, N, and O form a framework in the host structure of the phosphor. For example, MA, MD, ME, and MG are framework formers. Li, MB, MF, MC, and E, for example, are arranged between structural building blocks that form the framework, for example, in gaps or channels. According to at least one embodiment of the phosphor, 0 ≤ x ≤ 4 applies. According to at least one embodiment of the phosphor, 0 ≤ c ≤ 1 applies. According to at least one embodiment of the phosphor, 0 ≤ z ≤ 4 applies. According to at least one embodiment of the phosphor, 0 ≤ a ≤ 8 applies. According to at least one embodiment of the phosphor, 0 ≤ b ≤ 4 applies.According to at least one embodiment of the phosphor, 0 ≤ 2x+a ≤ 8 applies. According to at least one embodiment of the phosphor, 0 ≤ z+b ≤ 4 applies. According to at least one embodiment of the phosphor, -4 ≤ -z+bc ≤ 4 applies. According to at least one embodiment of the phosphor, MB is an element or a combination of elements selected from the group of divalent elements. 2023PF00709 July 1, 2024 P2023,0785 WO N - 7 - According to at least one embodiment of the phosphor, MC is an element or a combination of elements selected from the group of trivalent elements. In particular, MC is an element or a combination of elements selected from the group of rare earth elements. For example, the rare earth elements in the phosphor have a charge number of +3. According to at least one embodiment of the phosphor, MA is Li and / or Na.According to at least one embodiment of the phosphor, MD is an element or a combination of elements selected from the group of tetravalent elements. According to at least one embodiment of the phosphor, ME is an element or a combination of elements selected from the group of trivalent elements. In particular, ME and MC are different. However, it is also possible for ME and MC to be the same. According to at least one embodiment of the phosphor, MF is an element or a combination of elements selected from the group of monovalent elements. In particular, MF and MA are different. However, it is also possible for MF and MA to be the same. According to at least one embodiment of the phosphor, MG is an element or a combination of elements selected from the group of pentavalent elements. 2023PF00709 July 1, 2024 P2023,0785 WO N - 8 - According to at least one embodiment of the phosphor, E is an activator element.It is also possible for E to be a combination of activator elements. According to at least one embodiment, the phosphor has the molecular formula Li. 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, where 0 ≤ x ≤ 4, 0 ≤ c ≤ 1, 0 ≤ z ≤ 4, 0 ≤ a ≤ 8, 0 ≤ b ≤ 4, 0 ≤ 2x+a ≤ 8, 0 ≤ z+b ≤ 4, -4 ≤ -z+bc ≤ 4, MB is an element or a combination of elements selected from the group of divalent elements, MC is an element or a combination of elements selected from the group of trivalent elements, MA is Li and / or Na, MD is an element or a combination of elements selected from the group of tetravalent elements, ME is an element or a combination of elements selected from the group of trivalent elements, MF is an element or a combination of elements selected from the group of monovalent elements, MG is an element or a combination of elements selected from the group of pentavalent elements, and E is the activator element. It has been shown that the phosphor described here is advantageously hydrolysis-stable despite the presence of Li.Furthermore, emission properties of the phosphor can be influenced by the choice of components and the precise composition. Therefore, it is advantageously possible to adapt the phosphor to desired applications. According to at least one embodiment of the phosphor, MB is an element or a combination of elements selected from the following group: Be, Mg, Ca, Sr, Ba, Zn. 2023PF00709 July 1, 2024 P2023,0785 WO N - 9 - According to at least one embodiment of the phosphor, MC is an element or a combination of elements selected from the following group: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. In other words, MC is an element or a combination of elements selected from the group of rare earth elements. In particular, the sizes of the elements Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y are between the sizes of Lu and La.Therefore, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y can occupy equivalent positions to Lu and La in the host structure. Here, the size corresponds in particular to an ionic radius. According to at least one embodiment of the phosphor, MC is an element or a combination of elements selected from the following group: Gd, Dy, Ho, Pr, Nd, Y, Tb, Er, Tm, Yb, Sm, Lu. In particular, MC contributes to emission properties of the phosphor. In other words, for example, at least part of the electromagnetic radiation emitted by the phosphor can be attributed to electronic transitions in MC. For example, the electronic transitions are f→f transitions. The f→f transitions can be excited directly or by means of a sensitizer. For example, in Ho. 3+ , Pr 3+ , Tb 3+ , He 3+ , Tm 3+ , Sm 3+ and Nd 3+4f→4f transitions are excited. According to at least one embodiment of the phosphor, MD is an element or a combination of elements selected from the following group: Si, Ge, Sn, Pb, Ti, Zr, Hf. 2023PF00709 July 1, 2024 P2023,0785 WO N - 10 - According to at least one embodiment of the phosphor, ME is an element or a combination of elements selected from the following group: B, Al, Ga, In, Sc, Cr. According to at least one embodiment of the phosphor, MF is an element or a combination of elements selected from the following group: Na, K, Rb, Cs, Au, Cu, Pt, Ag. According to at least one embodiment of the phosphor, MG is an element or a combination of elements selected from the following group: V, Nb, Ta, P, As, Sb. According to at least one embodiment of the phosphor, E is an element or a combination of elements selected from the following group: Eu, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb, Mn, Cr, Ni, Bi, Cu, Ag, Ti, U.In particular, E is Ce and / or Eu. For example, the phosphor has more than one activator element E. In particular, Eu is in the form Eu. 2+ or Eu 3+ In particular, Ce is present in the form Ce 3+ In particular, Pr is in the form Pr 3+ In particular, Nd is present in the form Nd 3+ In particular, Sm is in the form Sm 3+ In particular, Tb is present in the form Tb 3+ In particular, Dy is in the form Dy 3+ In particular, Ho is in the form Ho 3+ In particular, He exists in the form He 3+ In particular, Tm is in the form Tm 3+ In particular, Yb is present in the form Yb 3+ or Yb 2+ In particular, Mn is present in the form Mn 2+ or Mn 4+ In particular, Cr is present in the form Cr 3+ In particular, nickel is present in the form Ni 2+ In particular, Bi is in the form Bi 3+In particular, Cu is present in the form Cu + or Cu 2+ In particular, Ag 2023PF00709 1 July 2024 P2023,0785 WO N - 11 - is in the form Ag + In particular, Ti is present in the form Ti 3+ or Ti 4+ In particular, U is in the form U 6+ For example, in Mn 2+ , Mn 4+ and Cr 3+ d→d transitions. In Eu 2+ and Ce 3+ For example, f→d transitions or d→f transitions are excited. For example, in Ce 3+ a 5d→4f transition takes place. For phosphors containing Ce 3+ as an activator element, only slight quenching effects are observed even at high irradiances. For example, a phosphor with the molecular formula Y3Al5O 12 :Ce 3+ a clearly pronounced intensity quenching only above an irradiance of 1 W / mm 2, especially above an irradiance of 10 W / mm². This fact is attributed to the fact that an excited state of Ce 3+ has a short lifetime. A typical lifetime of the excited state of Ce 3+is, for example, less than 100 nanoseconds. According to at least one embodiment of the phosphor, the activator element acts as a sensitizer. If the activator element acts as a sensitizer, in particular at least a portion of the energy absorbed by the activator element, which energy is made available to the activator element upon excitation with electromagnetic radiation, for example, is transferred to another constituent in the phosphor, for example MC. This results, for example, in a redshift of the electromagnetic radiation emitted by the phosphor and / or in additional emission peaks. For example, the activator element transfers at least 1%, at least 10%, at least 50%, at least 75%, or at least 90% of the absorbed energy. For example, Ce 3+as activator element E can also act as a sensitizer for MC and / or E equal to Nd, Ho, Tb, Tm, Er, Sm and Pr. In MC and / or E equal to Nd, Ho, Tb, Tm, Er, Sm and Pr, for example, f→f transitions are excited after the energy transfer. In particular, the emission spectrum of the phosphor with a sensitizer as activator element can have a large number of emission peaks. The individual emission peaks can then be assigned in particular to the activator element and the other constituent of the phosphor, for example MC. It is also possible for the individual emission peaks to be assigned to different activator elements if the activator element E comprises a combination of elements. According to at least one embodiment, the activator element E has a proportion of between 0.01 mol% and 10 mol% inclusive, in particular a proportion of between 0.1 mol% and 5 mol% inclusive, based on the sum of MC and MB.It is also possible for the activator element E to have a proportion of at most 15 mol% based on the sum of MC and MB, in particular when MC is Nd, Yb, Lu, Er or Tm. According to at least one embodiment, x = 0. According to at least one embodiment, c = 0. According to at least one embodiment, a = 0. According to at least one embodiment, b = 0. According to at least one embodiment, z = 0. 2023PF00709 July 1, 2024 P2023,0785 WO N - 13 - According to at least one embodiment, the phosphor has the empirical formula Li8MC[MAMD4N4O8]:E. In particular, the phosphor has the empirical formula Li8MC[LiSi4N4O8]:E or Li9MCSi4N4O8:E. In the molecular formula Li9MCSi4N4O8:E, the individual components are sorted according to their type, whereas the molecular formula Li8MC[LiSi4N4O8]:E provides an indication of a host structure of the compound.For example, the square brackets indicate that Li, Si, N, and O form a framework in the host structure of the phosphor. Framework is understood here and below to mean an anionic substructure of the host structure of the phosphor. The framework can have a three-dimensional structure and / or a layered structure. In particular, MC is selected from the group formed by the rare earth elements, for example Gd, Y, Pr, Nd, Ho, Tb, Tm, Er, Lu, Yb, Sm, and Dy, and combinations thereof. According to at least one embodiment of the phosphor, a molar ratio of MC to the sum of MA, MD, ME, and MG is less than 3:5. In other words, a ratio of MC to the framework formers is less than 3:5 (MC:framework former). In particular, a ratio of rare earth elements to the framework formers in the present phosphor is therefore less than 3:5.For example, the phosphor with the molecular formula Li8MC[LiSi4N4O8]:E has a ratio of MC to framework formers of 1:5. Garnets RE3(Al,Ga)5O. 12:E, where RE is a rare earth element, on the other hand, have a ratio of rare earth elements to framework formers of 3:5. Rare earth elements are expensive, especially compared to the framework formers. Thus, 2023PF00709 July 1, 2024 P2023,0785 WO N - 14 - a more cost-effective phosphor can advantageously be provided with the present phosphor. According to at least one embodiment of the phosphor, a mass fraction of MC with respect to the total mass of the phosphor is less than 59%, in particular less than 45%, for example between 20% and 33% inclusive. In particular, a mass fraction of rare earth elements in the phosphor with respect to the total mass of the phosphor is less than 59%. For example, the phosphor with MC equal to Gd or Dy has a mass fraction of MC of 31% with respect to the total mass of the phosphor.The phosphor with MC equal to Ho or Tm can have a mass fraction of MC of 32% with respect to the total mass of the phosphor. For example, the phosphor with MC equal to Pr has a mass fraction of MC of 28% with respect to the total mass of the phosphor, while the phosphor with MC equal to Y has a mass fraction of MC of 20% with respect to the total mass of the phosphor. The phosphor with MC equal to Tb has a mass fraction of MC of 30.7% with respect to the total mass of the phosphor. The phosphor with MC equal to Lu or Yb has a mass fraction of MC of 33% with respect to the total mass of the phosphor. The phosphor with MC equal to Sm has a mass fraction of MC of 30% with respect to the total mass of the phosphor. Garnets RE3Al5O. 12 :E, where RE is a rare earth element, have a mass fraction of rare earth elements relative to the total mass of the phosphor of at least 45%. For example, Gd3Al5O12 :E has a mass fraction of rare earth elements relative to the total mass of the phosphor of 59%. Dy3Al5O 12 :E and possible Ho3Al5O 12 :E 2023PF00709 1 July 2024 P2023,0785 WO N - 15 - have, for example, a mass fraction of rare earth elements in relation to the total mass of the phosphor of at least or of about 60%, Lu3Al5O 12 :E even by about 62%. Pr3Al5O 12 :E has a mass fraction of rare earth elements relative to the total mass of the phosphor of 56%. Y3Al5O 12 :E has a mass fraction of rare earth elements relative to the total mass of the phosphor of 45%. A possible Tm3Al5O 12 and Yb3Al5O 12 have a mass fraction of rare earth elements in relation to the total mass of the phosphor of 61%, a possible Tb3Al5O 12 a mass fraction of 59.3%. A possible Sm3Al5O 12has a mass fraction of rare earth elements relative to the total mass of the phosphor of 58%. According to at least one embodiment, the phosphor emits electromagnetic radiation with an emission spectrum after excitation with electromagnetic radiation of the excitation wavelength. In particular, the excitation wavelength has shorter wavelengths than the electromagnetic radiation emitted by the phosphor. The emission spectrum is the distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the excitation wavelength. For example, the emission spectrum is represented in the form of a diagram in which a spectral intensity or a spectral radiant flux per wavelength interval ("spectral intensity / spectral radiant flux") of the electromagnetic radiation emitted by the phosphor is represented as a function of the wavelength λ.In other words, the emission spectrum can be represented as a curve in an x / y diagram, with the wavelength plotted on the x-axis and the spectral intensity or the spectral radiant flux plotted on the y-axis. According to at least one embodiment, the phosphor is excited with electromagnetic radiation in the ultraviolet to blue range of the electromagnetic spectrum. In particular, the phosphor is excited with electromagnetic radiation in the range from 300 nanometers to 550 nanometers inclusive, in particular in the range from 400 nanometers to 500 nanometers inclusive. According to at least one embodiment, the phosphor is excited with electromagnetic radiation in the visible range of the electromagnetic spectrum.In particular, the phosphor is excited with electromagnetic radiation in the range from 380 nanometers to 830 nanometers inclusive. In particular, f→f transitions can be excited directly with electromagnetic radiation from the visible range of the electromagnetic spectrum, for example with electromagnetic radiation from the red range of the electromagnetic spectrum, for example with a wavelength of approximately 635 nm. By directly exciting the f→f transitions, efficiency losses due to energy transfer from the sensitizer to the MC element can be reduced. According to at least one embodiment, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum in the near-ultraviolet to infrared range of the electromagnetic spectrum.According to at least one embodiment, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum lying in the near-ultraviolet to blue range of the electromagnetic spectrum. The near-ultraviolet to blue range of the electromagnetic spectrum comprises, in particular, wavelengths in the range from 300 nanometers to 490 nanometers inclusive. In particular, the phosphor emits electromagnetic radiation in the near-ultraviolet, violet, and / or blue range of the electromagnetic spectrum. The ultraviolet range comprises, in particular, electromagnetic radiation with wavelengths in the range from 300 nanometers to 380 nanometers inclusive. The violet range comprises, in particular, electromagnetic radiation with wavelengths in the range from 380 nanometers to 430 nanometers inclusive.The blue range specifically encompasses wavelengths in the range from 430 nanometers to 490 nanometers. For example, near-ultraviolet to blue emission is achieved by a phosphor containing Ce. 3+ as an activator element and z-b+c near 4. In particular, at z-b+c near 4, an oxidic environment is achieved for the activator element E. This can be achieved with Ce 3+as an activator element lead to an emission of the phosphor in the ultraviolet to blue wavelength range. According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum lying in the green to yellow range of the 2023PF00709 July 1, 2024 P2023,0785 WO N - 18 - electromagnetic spectrum. The green to yellow range of the electromagnetic spectrum comprises in particular wavelengths in the range from 490 nanometers to 600 nanometers inclusive. In particular, the phosphor emits electromagnetic radiation in the green and / or yellow range of the electromagnetic spectrum. The green range comprises in particular electromagnetic radiation with wavelengths in the range from 490 nanometers to 570 nanometers inclusive.The yellow spectrum specifically encompasses electromagnetic radiation with wavelengths in the range from 570 nanometers to 600 nanometers. For example, a green to yellow emission is produced by a phosphor containing Ce. 3+ and / or Mn 2+ as an activator element. For a green to yellow emission, Ce 3+ for example, N atoms in its environment. With Eu 2+ As an activator element E, the phosphor exhibits, for example, an emission peak with an emission maximum in the yellow region of the electromagnetic spectrum. The green to yellow emitting phosphor can advantageously be used for general lighting, for shop lighting, in high-power LEDs, for example for car headlights, and in projection, for example in projectors. According to at least one embodiment of the phosphor, a dominant wavelength λ domthe electromagnetic radiation emitted by the phosphor in the range from 490 nanometers up to and including 780 nanometers, in particular in the range from 490 nanometers up to and including 600 nanometers. 2023PF00709 July 1, 2024 P2023,0785 WO N - 19 - To determine the dominant wavelength of the electromagnetic radiation emitted by the phosphor, a straight line is drawn in the CIE standard diagram, starting from the white point, through the color location of the electromagnetic radiation. The point of intersection of the straight line with the spectral color line delimiting the CIE standard diagram, which lies closer to the color location of the emission of the phosphor, designates the dominant wavelength of the electromagnetic radiation. In general, the dominant wavelength deviates from the wavelength of the emission maximum. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:Ce 3+, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum that lies in the range from 490 nanometers to 550 nanometers, in particular in the range from 500 nanometers to 530 nanometers. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ , there is a dominant wavelength λ domthe electromagnetic radiation emitted by the phosphor in the range from 500 nanometers up to and including 600 nanometers, in particular in the range from 525 nanometers up to and including 575 nanometers. According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum lying in the orange to red range of the electromagnetic spectrum. The orange to red 2023PF00709 July 1, 2024 P2023,0785 WO N - 20 - range of the electromagnetic spectrum comprises in particular wavelengths in the range from 600 nanometers up to and including 780 nanometers. In particular, the phosphor emits electromagnetic radiation in the orange and / or red range of the electromagnetic spectrum.The orange range, for example, includes electromagnetic radiation with wavelengths in the range from 600 nanometers to 640 nanometers. The red range, for example, includes electromagnetic radiation with wavelengths in the range from 640 nanometers to 780 nanometers. For example, an orange to red emission is produced by a phosphor with Eu. 2+ as an activator element. With Mn 2+ or Mn 4+ a red emission can be achieved. Furthermore, it is possible that a Ce 3+ -activated phosphor with MC equal to Ho, Pr, Tm, and Eu exhibits emission in the orange to red wavelength range. Advantageously, the orange to red emitting phosphor can be used for general lighting, shop lighting, horticultural lighting, and backlighting of displays. According to at least one embodiment of the phosphor, a dominant wavelength λ domthe electromagnetic radiation emitted by the phosphor in the range from 600 nanometers to 780 nanometers inclusive, in particular in the range from 600 nanometers to 750 nanometers inclusive. According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has an emission peak with an emission maximum that lies in the near-infrared to infrared 2023PF00709 July 1, 2024 P2023,0785 WO N - 21 - range of the electromagnetic spectrum. The near-infrared range of the electromagnetic spectrum comprises, for example, wavelengths in the range from 780 nanometers to 3.0 micrometers inclusive, in particular in the range from 800 nanometers to 1500 nanometers inclusive, for example in the range from 850 nanometers to 1050 nanometers inclusive. For example, a near-infrared emission from a phosphor with Eu 2+as an activator element. Near-infrared to infrared emission can also be achieved with Cr 3+ , Nd 3+ , Tm 3+ , He 3+ , Ni 2+ , Ti 2+ , Ti 3+ or Bi 3+ as an activator element. It is also possible that Ce 3+ can be used as an activator element for near-infrared emission, especially with MC equal to Nd, Er or Tm. In this case, the activator element Ce 3+ as a sensitizer for MC equal to Nd, Er or Tm. In particular, the activator element Ce 3+ part of the absorbed energy to the Nd, Er or Tm, so that an emission related to transitions in the Ce 3+ can hardly be measured anymore. For example, the phosphor with MC equal to Nd or Er and E equal to Ce 3+ or with MC equal to Gd and E equal to Ce 3+ and Nd 3+in the range between 850 nanometers and 1050 nanometers. For example, the phosphor emits with MC equal to Nd or Er, especially with E equal to Ce 3+, also in the range between 1050 nanometers and 2500 nanometers inclusive, in particular in the range between 1050 nanometers and 1700 nm inclusive. In particular, the phosphor with MC equal to Tm emits in the range between 750 nanometers and 850 nanometers inclusive. For example, the phosphor, in particular with MC equal to Er, has an emission maximum in the range from 1500 nanometers to 1650 nanometers inclusive. Advantageously, the phosphor with near-infrared and / or infrared emission can be used for spectroscopic investigations, for example of foodstuffs or polymers, and for sensor applications. For example, amino groups have an absorption band around approximately 1050 nanometers and / or at approximately 1500 nanometers. The absorption band can be used in particular to detect the protein content of food.The phosphor described here exhibits a particularly high emission in this range. Therefore, it can be advantageously used in applications that determine the protein content of foods. For example, the phosphor with MC equal to Nd or Er is used for such applications. Furthermore, due to the previously described emission properties, the phosphor described here, especially with Cr, can be used. 3+ or Ni 2+as an activator element or with MC = Nd or Er, can be advantageously used in applications where broadband emission in the infrared spectral range is required. For example, the phosphor is used in analytical devices that have a silicon detector. The sensitivity of the silicon detector decreases significantly, particularly with increasing wavelength from about 900 nanometers. This effect can be counteracted with the phosphor described here. This advantageously increases the measurement accuracy in spectroscopic investigations, and even weak absorption bands in the range above 900 nanometers can be detected, for example.Furthermore, a phosphor described here with emission in the infrared range can be used in optical coherence tomography, in particular in the field of medicine, for example in ophthalmology, or in angiography. In coherence tomography, wavelengths in the range from 800 nanometers to 1400 nanometers are used in particular. Angiography is used, for example, to depict blood vessels. Likewise, the phosphor described here with emission in the infrared range can be used in facial recognition, in particular for unlocking a smartphone or for authentication, or in optical temperature measurement. In optical temperature measurement, for example, the change in emission is observed as a function of the ambient temperature. It is possible that phosphors containing Cr. 3+as an activator element have a low efficiency. This may be due to the moderate excitability of the Laporte-forbidden d→d electron transition of the activator element Cr 3+ It is also possible that Cr 3+ -activated phosphors only have a low temperature stability of the emission, since at elevated temperatures there are more radiationless transitions of the excited Cr 3+ -electrons into the ground state, thus leading to a decrease in emission intensity. With other phosphors, such an effect can already occur at temperatures below room temperature, i.e., around 23 °C. 2023PF00709 1 July 2024 P2023,0785 WO N - 24 - For lanthanide ions, such as Nd 3+ or He 3+ , is a shielding of their 4f electrons by the electrons of the closed 5s 2 5p 6-xenon shell is observable. Optical transitions between 4f states, which can also be responsible for the emission of the phosphor described here, are thus hardly affected by lattice vibrations or interactions with ligands, which can also be enhanced by elevated temperatures. Thus, with the present phosphor, especially with MC = Nd or Er, non-radiative transitions to the ground state due to lattice vibrations are less likely. Therefore, the phosphor described here with MC or E = Nd or Er is advantageously used in applications where emission in the near-infrared range is required. The phosphors with MC or E = Nd or Er can exhibit more stable emission even at higher operating temperatures compared to other phosphors.Although previously used materials such as Cd(Te,Se) material systems, for example quantum dots, meet the necessary criteria of a continuous emission spectrum in the near infrared range for spectroscopic investigations, they are unsuitable for industrial application due to the toxicity of Cd. However, the phosphor described here is, in particular, free of Cd and is therefore advantageously not subject to strict application restrictions. According to at least one embodiment of the phosphor, the emission spectrum of the electromagnetic radiation emitted by the phosphor has a center-of-mass wavelength 2023PF00709 July 1, 2024 P2023,0785 WO N - 25 - λ. centroidin the range from 700 nanometers up to and including 2000 nanometers. The centroid wavelength refers to the center of a spectral distribution of an emission spectrum. In other words, the centroid wavelength indicates the location of the center of the emission spectrum. The centroid wavelength is calculated as the weighted arithmetic mean of the wavelengths λ, weighted by their amplitudes using the distribution function s(λ): According to at least one embodiment of the phosphor, an emission peak in the emission spectrum of the electromagnetic radiation emitted by the phosphor has a full width at half maximum (FWHM) of at most 800 nanometers, in particular of at most 500 nanometers, for example of at most 300 nanometers or of at most 250 nanometers. The term full width at half maximum refers to a curve with a maximum, such as the emission spectrum, where the full width at half maximum is the region on the x-axis corresponding to the two y-values ​​that correspond to half the maximum. According to at least one embodiment of the phosphor, an emission peak in the emission spectrum of the electromagnetic radiation emitted by the phosphor has a full width at half maximum in the range from 50 nanometers up to and including 250 nanometers, in particular in the range 2023PF00709 1.July 2024 P2023,0785 WO N - 26 - from 80 nanometers up to and including 150 nanometers. In other words, the phosphor is, in particular, a broadband emitting phosphor. Such a phosphor can advantageously be used in white light applications. Due to the large half-width, a large wavelength range is covered, so that a mixture of different phosphors is advantageously no longer necessary. For example, an emission peak of a phosphor with Ce. 3+ as an activator element has a half-width in the range from 70 nanometers to 250 nanometers. A phosphor with Eu 2+As an activator element, for example, it has an emission peak with a half-width in the range between 10 nanometers and 180 nanometers inclusive, or between 10 nanometers and 150 nanometers inclusive. According to at least one embodiment of the phosphor, an emission peak in the emission spectrum of the electromagnetic radiation emitted by the phosphor has a half-width of at most 50 nanometers. In particular, the half-width is at most 30 nanometers or at most 20 nanometers. In other words, the phosphor is, for example, a narrow-band emitting phosphor. Such a phosphor can advantageously be used in applications in which a defined narrow-band wavelength range is required, for example in display applications with color filters.If a broader wavelength range were available for the color filter, energy would be lost due to the unsuitable wavelengths. The present phosphor can therefore increase the efficiency of such applications. For example, a phosphor with Mn. 4+ as an activator element exhibits an emission peak with a half-width of 50 nanometers at most. Emission peaks that are emitted by MC or E equal to Eu 3+ can have a half-width of 50 nanometers at most. In particular, the phosphor with E equal to Mn 4+ , Pr 3+ , Ho 3+ , Nd 3+ , Tb 3+ , Tm 3+ , He 3+ , Sm 3+ or Eu 3+an emission peak with a half-width in the range between 1 nanometer and 20 nanometers inclusive. According to at least one embodiment of the phosphor, the emission spectrum has a multiplicity of emission peaks. The multiplicity of emission peaks is in particular at least two emission peaks, for example three or more emission peaks, which for example have a different spectral intensity and / or a different half-width. In particular, the phosphor has an emission peak with an emission maximum in the green to yellow wavelength range of the electromagnetic spectrum and an emission peak in the orange to red wavelength range and / or in the near-infrared to infrared wavelength range of the electromagnetic spectrum. Thus, it is advantageously possible for a higher color rendering index (CRI) to be achieved when the phosphor is used in an optoelectronic component."color rendering index", CRI) than when using only a conventional phosphor, for example a garnet. 2023PF00709 July 1, 2024 P2023,0785 WO N - 28 - In particular, an improved CRI is achieved with phosphors, especially with the molecular formula Li8MC[LiSi4N4O8]:Ce. 3+, with MC equal to Ho, Pr, Tm, Tb, Sm or Eu. The phosphor described here with E equal to Ho, Pr or Eu can also advantageously lead to an improved color rendering index in optoelectronic components. Furthermore, it is advantageously possible that, due to the different emission peaks, only a single phosphor needs to be used and not a mixture of different phosphors. In particular, the use of expensive red-emitting nitride phosphors can be avoided. According to at least one embodiment of the phosphor, an emission spectrum of the electromagnetic radiation emitted by the phosphor has only one emission peak. According to at least one embodiment, the phosphor has an improved photometric radiation equivalent. The photometric radiation equivalent (PRE)The luminous efficacy of radiation (LER) of a phosphor is the quotient of the luminous flux of the electromagnetic radiation emitted by the phosphor and the radiant power of the electromagnetic radiation emitted by the phosphor. The greater the photometric radiation equivalent, the greater the luminous flux usable by the eye for a given power. For example, an improved photometric radiation equivalent for phosphors, in particular with the molecular formula Li8MC[LiSi4N4O8]:Ce. 3+ , with MC being Y, Gd, Tm, Lu, Sm or Dy. According to at least one embodiment, the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ , a photometric radiation equivalent in the range of 400 lm·W inclusive opt. -1 up to and including 500 lm W opt.-1. For example, the photometric radiation equivalent of the phosphor is greater than 430 lm·W opt. -1 . Thus, the phosphor described here can advantageously have a higher photometric radiation equivalent than conventional garnet phosphors. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:Ce 3+, an emission intensity of the phosphor at about 100 °C is at least 70%, in particular at least 75%, for example about 85% of the emission intensity of the phosphor at about 25 °C. Thus, the phosphor advantageously has high temperature stability. According to at least one embodiment, the phosphor is crystalline. In other words, the host structure of the phosphor has a defined crystal structure. The crystal structure can be described with the help of a unit cell. The unit cell is a unit from which the host structure can be built up by repeated translation in three directions. To describe the three-dimensional unit cell of the crystal structure, six lattice parameters are required: three lengths a, b and c and three angles α, β and γ. The three 2023PF00709 July 1, 2024 P2023,0785 WO N - 30 - lattice parameters a, b and c are the lengths of the lattice vectors that span the unit cell.The other three lattice parameters α, β, and γ are the angles between these lattice vectors. α is the angle between b and c, β is the angle between a and c, and γ is the angle between a and b. V corresponds to the volume of the unit cell. According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor has a framework. In particular, the framework is composed of framework formers, such as MA, MD, ME, and MG, in combination with oxygen and nitrogen. In the molecular formula Li. 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, the framework-forming components of the phosphor are indicated, in particular, in square brackets. For example, Li, MB, MF, and MC are arranged in the interstices of the framework. In particular, the activator element E is also arranged in the interstices of the framework. The activator element E occupies, for example, the same positions in the host structure as MC. According to at least one embodiment of the phosphor, the framework is composed of layers and / or a three-dimensional network. In other words, the crystal structure of the host structure of the phosphor can have layers and / or a three-dimensional network. In particular, the layers or the three-dimensional network are formed with tetrahedra. For example, the three-dimensional network is composed of linked layers. 2023PF00709 1.July 2024 P2023,0785 WO N - 31 - In particular, the framework and / or a position of the atoms in the interstices of the framework change depending on the composition of the phosphor. This can be explained, for example, by different atomic radii and / or by preferred coordination spheres of the elements used. For example, the structure changes in the presence of MB, MF, ME, and / or MG. However, it is also possible for the structure itself to remain the same in the presence of MB, MF, ME, and / or MG. According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor has coordination polyhedra that have Li, MB, MF, MC, MA, MD, ME, or MG as the central atom.In particular, the coordination polyhedra are selected from the following group: tetrahedron, trigonal bipyramid, square bipyramid, pentagonal bipyramid, hexagonal bipyramid, square pyramid, pentagonal pyramid, hexagonal pyramid, octahedron, cube, trigonal prism, square prism, trigonal antiprism, tetragonal, in particular square, antiprism. It is also possible for Li, MB, MF, MC, MA, MD, ME, or MG to be coordinated in a trigonal planar or square planar fashion. The tetrahedra can be singly, doubly, or triply capped and / or distorted. According to at least one embodiment of the phosphor, the coordination polyhedra are at least partially corner-sharing. Corner-sharing coordination polyhedra in particular have a common corner. For example, such a corner is formed by an anion. 2023PF00709 1.July 2024 P2023,0785 WO N - 32 - According to at least one embodiment of the phosphor, the coordination polyhedra are at least partially edge-shared. Edge-shared coordination polyhedra in particular have a common edge. According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor has at least one structural element selected from the following group: MA(N,O)4 tetrahedron, MD(N,O)4 tetrahedron, ME(N,O)4 tetrahedron, MG(N,O)4 tetrahedron. In particular, the crystal structure has Si(N,O)4 tetrahedron and / or Li(N,O)4 tetrahedron. The tetrahedra in particular have a tetrahedral gap. The tetrahedral gap is a region in the interior of the respective tetrahedron. For example, the term “tetrahedral gap” refers to the area inside the tetrahedron that remains free when touching spheres are placed at the corners of the tetrahedron.The N atoms and / or the O atoms of the tetrahedra span the tetrahedron, with the MA atom, the MD atom, the ME atom, or the MG atom located in the tetrahedral gap of the spanned tetrahedron, depending on the type of tetrahedron. In other words, the tetrahedra are centered around the MA atom, the MD atom, the ME atom, or the MG atom of the spanned tetrahedron, depending on the type of tetrahedron. The MA atom, the MD atom, the ME atom, or the MG atom is surrounded tetrahedron-shaped by a total of four N atoms and / or O atoms. In particular, all N atoms and / or O atoms that span the tetrahedron have a similar distance to the MA atom, the MD atom, the ME atom, or the MG atom located in the tetrahedral gap. 2023PF00709 July 1, 2024 P2023,0785 WO N - 33 - According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor comprises corner-sharing MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra and / or MG(N,O)4 tetrahedra.In particular, the MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra, and / or MG(N,O)4 tetrahedra are corner-sharing on all sides. According to at least one embodiment of the phosphor, the crystal structure of the host structure of the phosphor has edge-sharing MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra, and / or MG(N,O)4 tetrahedra. According to at least one embodiment of the phosphor, MC and / or E are eight-coordinated in the crystal structure of the host structure of the phosphor. In other words, eight anions are located in one coordination sphere of MC and / or E. In particular, one MC atom and / or one E atom are surrounded by eight anions in a square antiprismatic manner. It has been shown that eightfold coordination positively influences the emission properties of MC and / or E.According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor comprises five-coordinate Li. In particular, Li is coordinated in a trigonal bipyramidal and / or square pyramidal manner. However, it is also possible for Li to be present in a different coordination mode in the phosphor. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor comprises various layers. In particular, the layers are arranged alternately. The layers lie, for example, in the ab plane. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor comprises a first layer.The first layer is, for example, a lithosilicate layer. A lithosilicate layer comprises, in particular, Si(N,O)4 tetrahedra and Li(N,O)4 tetrahedra. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the first layer comprises structural elements selected from the following group: MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedron, MG(N,O)4 tetrahedron. In particular, the structural elements in the first layer are corner-linked, for example on all sides. In particular, the first layer comprises Si(N,O)4 tetrahedra and Li(N,O)4 tetrahedra. For example, a Li(N,O)4 tetrahedron is corner-sharing with four Si(N,O)4 tetrahedra.According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the first layer has four-rings made of MA(N,O)4 tetrahedra, MD(N,O)4 tetrahedra, ME(N,O)4 tetrahedra and / or MG(N,O)4 tetrahedra, in particular of MD(N,O)4 tetrahedra, for example of Si(N,O)4 tetrahedra. The four-rings are formed in particular by corner sharing of the tetrahedra. 2023PF00709 July 1, 2024 P2023,0785 WO N - 35 - According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has channels. In particular, the channels are created by the four-rings in the first layer. For example, the channels run along the c-axis. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the MC atoms are arranged in the channels.In particular, the MC atom has a square antiprismatic coordination. It is possible for the activator element E to occupy the same positions as the MC atoms in the crystal structure of the host structure of the phosphor. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a second layer. In particular, the first layer and the second layer are arranged alternately. For example, the first layer and the second layer are linked to one another. In this way, a three-dimensional network can be formed. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the second layer has coordination polyhedra with Li as the central atom. In particular, the second layer has five-coordinate Li.For example, the Li in the second layer is coordinated in a trigonal bipyramidal and / or square pyramidal manner. In other words, the second layer comprises trigonal Li(N,O)5 bipyramids and / or square Li(N,O)5 pyramids. In particular, the coordination polyhedra with Li as the central atom, for example, the trigonal Li(N,O)5 bipyramids and / or the square Li(N,O)5 pyramids, are edge-shared. In particular, the coordination polyhedra with Li as the central atom, for example, the trigonal Li(N,O)5 bipyramids and / or the square Li(N,O)5 pyramids, are arranged in the second layer in such a way that the channels from the first layer are continued. For example, four trigonal Li(N,O)5 bipyramids and four square Li(N,O)5 pyramids are arranged in such a way that the channels from the first layer are continued.According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the first layer and the second layer form a three-dimensional network. Therefore, the phosphor can also be referred to as lithium oxonitridolithosilicate. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a tetragonal space group, in particular P4 / n. According to at least one embodiment of the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a lattice parameter a in the range from 8.00 Å to 12.00 Å inclusive, in particular in the range from 9.50 Å to 10.50 Å inclusive. In a tetragonal space group, in particular, the lattice parameter a is equal to the lattice parameter b. 2023PF00709 1.July 2024 P2023,0785 WO N - 37 - According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a lattice parameter c in the range from 4.00 Å to 6.00 Å inclusive, in particular in the range from 4.50 Å to 5.50 Å inclusive. According to at least one embodiment of the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, the crystal structure of the host structure of the phosphor has a cell volume V in the range from 400 Å inclusive. 3 up to and including 600 Å 3 , especially in the range up to and including 450 Å 3 up to and including 550 Å 3According to at least one embodiment, the phosphor has the same crystal structure as Li8Gd[LiSi4N4O8]:E. Furthermore, a method for producing a phosphor is specified. Preferably, the method described here is used to produce the phosphor according to the above-mentioned embodiments. In particular, all statements made for the phosphor also apply to the method, and vice versa. According to at least one embodiment of the method, a phosphor comprising an element or a combination of elements from the group of monovalent elements, an element or a combination of elements from the group of trivalent elements, an element or a combination of elements from the group of tetravalent elements, oxygen and / or nitrogen, and an activator element E is produced. 2023PF00709 1.July 2024 P2023,0785 WO N - 38 - According to at least one embodiment of the method, a phosphor having the molecular formula Li. 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, where 0 ≤ x ≤ 4, 0 ≤ c ≤ 1, 0 ≤ z ≤ 4, 0 ≤ a ≤ 8, 0 ≤ b ≤ 4, 0 ≤ 2x+a ≤ 8, 0 ≤ z+b ≤ 4, -4 ≤ -z+bc ≤ 4, MB is an element or a combination of elements from the group of divalent elements, MC is an element or a combination of elements from the group of trivalent elements, MA is Li and / or Na, MD is an element or a combination of elements from the group of tetravalent elements, ME is an element or a combination of elements from the group of trivalent elements, MF is an element or a combination of elements from the group of monovalent elements, MG is an element or a combination of elements from the group of pentavalent elements and E is an activator element. According to at least one embodiment of the process, reactants are provided.In particular, the reactants are selected from a group formed by the elements oxides, nitrides, nitridosilicates, halides, oxalates, citrates, carbonates, amides, and imides of monovalent elements, divalent elements, trivalent elements, tetravalent elements, pentavalent elements, and the activator element. In particular, the reactants are selected from the group formed by the elements oxides, nitrides, nitridosilicates, halides, oxalates, citrates, carbonates, amides, and imides of Li, MB, MF, MC, MA, MD, ME, MG, and E. For example, the reactants, in particular for producing the phosphor with the molecular formula Li8MC[LiSi4N4O8]:E, are selected from the group formed by the elements oxides, nitrides, nitridosilicates, and fluorides of Li, MC, Si, and E. In particular, the reactants are selected 2023PF00709 1.July 2024 P2023,0785 WO N - 39 - from the group formed by Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd, Gd2O3, GdF3, Dy, Dy2O3, DyF3, Ho, Ho2O3, HoF3, Pr, Pr2O3, Pr6O. 11, PrF3, Nd, Nd2O3, NdF3, Y, Y2O3, YF3, Tm, Tm2O3, TmF3, Tb, Tb2O3, Tb4O7, TbF3, Er, Er2O3, ErF3, Lu, Lu2O3, LuN, LuF3, Yb, Yb2O3, YbF3, Sm, Sm2O3, SmF3, Ce, CeO2, CeF3, CeN, EuF2, Eu2O3. Advantageously, the reactants can be obtained easily and inexpensively. According to at least one embodiment of the process, the reactants are mixed to form a reactant mixture. The mixing is carried out in particular using a hand mortar, a mortar mill, a ball mill, or a multi-axis mixer. According to at least one embodiment of the process, the reactant mixture is heated. In particular, the heating takes place in a tube furnace, a flow tube furnace, or a high-frequency furnace. According to at least one embodiment, the method comprises the steps of providing reactants, blending the reactants to form a reactant mixture, and heating the reactant mixture. In particular, the steps are carried out in the specified order.In particular, it is possible for the method to produce a mixture which comprises or consists of the phosphor. Further constituents of the mixture can be, for example, reactants which did not react during the production of the phosphor, impurities and / or secondary phases which were formed during production. According to at least one embodiment of the method, heating takes place to a first temperature in the range between 700°C and 1600°C inclusive, in particular in the range between 800°C and 1600°C inclusive, for example in the range between 900°C and 1400°C inclusive.According to at least one embodiment of the method, heating takes place at a first temperature in the range between 800°C and 1100°C, in particular at a temperature in the range between 900°C and 1000°C. Such a temperature is particularly used when using a Ta tube. Advantageously, the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, can therefore be produced at a relatively low temperature. Garnets RE3(Al,Ga)5O. 12:E, on the other hand, are produced at a temperature of at least 1500°C. Thus, energy can advantageously be saved with the process described here. According to at least one embodiment of the process, the reactant mixture is heated to the first temperature for a time in the range between 30 minutes and 20 hours inclusive, in particular for a time in the range between 8 hours and 15 hours inclusive, for example for a time of approximately 12 hours. According to at least one embodiment of the process, after heating the reactant mixture is cooled, in particular slowly. For example, a temperature program is run during the cooling which has a second temperature and / or a third temperature. To reach the second temperature, in particular a first cooling rate 2023PF00709 July 1, 2024 P2023,0785 WO N - 41 - is set.To reach the third temperature, in particular a second cooling rate is set. In particular, the second temperature is at most 600°C, for example at most 500°C. In particular, the third temperature is at most 200°C, for example at most 150°C. In particular, the first cooling rate is at most 500°C / h, in particular at most 6°C / h, for example at most 3°C / h, for example at about 2°C / h or at about 1°C / h. In particular, the second cooling rate is at most 250°C / h, in particular at most 20°C / h, for example at most 18°C / h. According to at least one embodiment of the method, the reactant mixture is heated under a protective gas atmosphere. For example, the protective gas atmosphere is an atmosphere of argon and / or N2, in particular argon. In particular, heating the reactant mixture leads to an overpressure of the protective gas during the reaction.According to at least one embodiment of the method, heating takes place in a W crucible, a Ni crucible, or a Ta tube. Heating in a W crucible or a Ni crucible takes place, for example, in a flow tube furnace or a high-frequency furnace. Heating in a Ta tube takes place, for example, in a tube furnace. According to at least one embodiment of the method, a flux is added to the reactant mixture. In particular, based on the total amount of the reactant mixture, at most 10 wt.%, in particular at most 5 wt.% of the flux is added. The flux can advantageously be used to improve the crystallinity of the phosphor and / or to support crystal growth. In particular, the flux comprises a compound selected from the group formed by halides, in particular chlorides and / or fluorides, boron-containing compounds, and combinations thereof.For example, the flux is a compound or a combination of compounds selected from the following group: Li, LiF, LiCl, NaF, NaCl, SrCl2, SrF2, CaCl2, CaF2, BaCl2, BaF2, NH4Cl, NH4F, KF, KCl, MgF2, MgCl2, AlF3, H3BO3, B2O3, Li2B4O7, NaBO2, Na2B4O7, LiBF4, NH4HF2, NaBF4, KBF4, EuF3 and compounds derived therefrom, such as hydrates. Advantageously, one reactant can simultaneously serve as a flux. According to at least one embodiment of the method, the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, is reacted with the reactants Si3N4, SiO2, Li2O and MC2O3, MC6O. 11 or MCF3. The reactant mixture also includes a reactant for E, for example CeF3. In particular, the reactants Si3N4, SiO2, Li2O and MC2O3, MC6O 11or MCF3 in a ratio of 2.2:1.6:10.5:0.3 to 2:2:10.5:1 or of 2:2:10.5:0.3 to 2:2:10.5:1. For example, Li or LiF is added to the reactant mixture as a flux in an amount of at most 10 wt.%, in particular at most 5 wt.%, based on the total amount of the reactant mixture. Furthermore, the use of a phosphor described here is specified. All features disclosed with respect to the phosphor therefore also apply to the use and vice versa. 2023PF00709 July 1, 2024 P2023,0785 WO N - 43 - According to at least one embodiment, the phosphor is used in a light source. The light source is, in particular, an arrangement comprising an optoelectronic component that emits electromagnetic radiation in the ultraviolet to infrared wavelength range, in particular in the visible wavelength range of the electromagnetic spectrum. An optoelectronic component is also described.In particular, the optoelectronic component comprises the phosphor described here. All statements made regarding the phosphor and the method for producing a phosphor therefore also apply in particular to the optoelectronic component, and vice versa. According to at least one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip. In particular, the radiation-emitting semiconductor chip emits electromagnetic radiation of a first wavelength range during operation. The semiconductor chip can comprise an active, in particular epitaxially grown, layer sequence containing an active region that can generate the electromagnetic radiation of the first wavelength range during operation of the component. The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip.The electromagnetic radiation of the first wavelength range generated in the semiconductor chip is emitted, for example, through a radiation exit surface of the semiconductor chip. The electromagnetic radiation of the first wavelength range comprises, in particular, the excitation wavelength of the phosphor described here. 2023PF00709 July 1, 2024 P2023,0785 WO N - 44 - According to at least one embodiment, the optoelectronic component has a conversion element with a phosphor described here. The phosphor converts, in particular, the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The first wavelength range is at least partially different from the second wavelength range.The conversion element is arranged, for example, such that the electromagnetic radiation of the first wavelength range emitted by the radiation-emitting semiconductor chip impinges on the conversion element. The electromagnetic radiation of the second wavelength range comprises the electromagnetic radiation emitted by the phosphor. According to at least one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip and a conversion element comprising the phosphor described here. According to at least one embodiment of the optoelectronic component, the radiation-emitting semiconductor chip comprises a micro-LED. LED is the abbreviation for light-emitting diode here and below. In particular, the radiation-emitting semiconductor chip is a micro-LED.Micro-LEDs can have a width, a length, a thickness and / or a diameter of less than or equal to 100 micrometers, in particular less than or equal to 70 micrometers, for example less than or equal to 50 micrometers. In particular, micro-LEDs, for example rectangular micro-LEDs, have an edge length, in particular in plan view of the layers of the layer stack, of a luminous area of ​​less than or equal to 70 micrometers, for example less than or equal to 50 micrometers. A micro-LED is, for example, a light-emitting diode in which a growth substrate has been removed, such that a thickness of the micro-LED is, for example, in the range from 1.5 micrometers inclusive to 10 micrometers inclusive. For example, the micro-LED is provided on a wafer with detachable holding structures. The micro-LED can be detached from the wafer without causing damage.In particular, micro-LEDs are primarily used in displays. The micro-LEDs form pixels or subpixels and emit light in a defined color. Due to their small pixel size and high density at short distances, micro-LEDs are suitable, among other things, for small monolithic displays for augmented reality applications, in particular data glasses. Furthermore, further applications are being developed, in particular for use in data communication or for pixelated lighting applications. According to at least one embodiment of the optoelectronic component, the first wavelength range has wavelengths in the ultraviolet to blue wavelength range of the electromagnetic spectrum. For example, the first wavelength range comprises wavelengths in the range from 300 nanometers up to and including 550 2023PF00709 1.July 2024 P2023,0785 WO N - 46 - nanometers, in particular in the range from 400 nanometers to 500 nanometers. In particular, the radiation-emitting semiconductor chip emits electromagnetic radiation with a dominant wavelength λ. dom in the range from 430 nanometers to 460 nanometers inclusive. According to at least one embodiment of the optoelectronic component, the radiation-emitting semiconductor chip emits blue light with a power of at least 0.25 W. opt. / mm 2 , of at least 0.5 W opt. / mm 2 or at least 1 W opt. / mm 2According to at least one embodiment of the optoelectronic component, the first wavelength range has wavelengths in the red region of the electromagnetic spectrum. For example, the first wavelength range comprises wavelengths in the range from 600 nanometers to 780 nanometers inclusive. In particular, a radiation-emitting semiconductor chip that emits electromagnetic radiation in the first wavelength range with wavelengths in the red region of the electromagnetic spectrum is used together with a phosphor described here with Cr, Ho, Pr, Nd, Er, Cu, or Ni as the activator element E. For example, a red-emitting radiation-emitting semiconductor chip can also be combined with the phosphor with MC equal to Ho, Pr, Tb, Er, Tm, or Nd.When MC is Ho, Pr, Tb, Er, Tm, or Nd, for example, f→f transitions are excited with electromagnetic radiation from the red region of the electromagnetic spectrum, which can lead to emission of the phosphor in the near-infrared or infrared range. 2023PF00709 July 1, 2024 P2023,0785 WO N - 47 - According to at least one embodiment of the optoelectronic component, the first wavelength range has wavelengths in the range between 700 nanometers and 1650 nanometers inclusive. In particular, in this case, a phosphor with infrared emission described here is used in the conversion element. According to at least one embodiment of the optoelectronic component, the radiation-emitting semiconductor chip and the conversion element are arranged in a housing, in particular in a cavity of a housing.The housing advantageously serves to mechanically stabilize and protect the semiconductor chip and the conversion element arranged therein. According to at least one embodiment of the optoelectronic component, the conversion element is in direct contact with the radiation-emitting semiconductor chip. According to at least one embodiment of the optoelectronic component, the conversion element is arranged at a distance from the radiation-emitting semiconductor chip. However, it is possible for the conversion element to be connected to the radiation-emitting semiconductor chip, for example via an adhesive layer. The adhesive layer comprises, for example, a silicone resin and / or an epoxy resin. According to at least one embodiment of the optoelectronic component, the conversion element has the shape of a platelet. In particular, the phosphor is embedded in an inorganic matrix material.Alternatively, it is possible for the phosphor to form a layer together with an organic matrix material or an inorganic matrix material, and for the layer to be arranged on a transparent carrier. The layer with the phosphor and the transparent carrier then together form the platelet. According to at least one embodiment of the optoelectronic component, the conversion element has a matrix material. The phosphor is embedded, for example, in the matrix material. The matrix material comprises, in particular, a material selected from the group formed by glass, such as silicate glass, water glass, or quartz glass, and polymers, such as polystyrene, polysilazane, polymethyl methacrylate (PMMA), polycarbonate, polyacrylate, polytetrafluoroethylene, polyvinyl, silicone resin, silicone, polysiloxane, epoxy resin, and combinations thereof. Silicone and / or polysiloxane can be fluorinated.In particular, the phosphor is distributed homogeneously in the matrix material. However, it is also possible for the phosphor to have a concentration gradient in the matrix material. According to at least one embodiment of the optoelectronic component, the conversion element is designed as an encapsulation. The encapsulation fills the cavity of the housing, for example, at least partially. In addition to the phosphor, the encapsulation also comprises, in particular, the matrix material. In particular, the encapsulation covers side surfaces of the radiation-emitting component. According to at least one embodiment of the optoelectronic component, a non-converting encapsulation is arranged in the cavity of the housing. For example, the non-converting encapsulation has a transmittance for electromagnetic radiation in the visible wavelength range of at least 85% or at least 95%.Such a non-converting encapsulation can further comprise scattering particles. The scattering particles are, for example, selected from the group consisting of SiO2 particles, TiO2 particles, BaSO4 particles, Al2O3 particles, ZrO2 particles, and combinations thereof. The scattering particles are, in particular, homogeneously distributed in the non-converting encapsulation. However, it is also possible for the scattering particles in the non-converting encapsulation to have a concentration gradient. According to at least one embodiment of the optoelectronic component, the conversion element comprises scattering particles. The scattering particles are, for example, selected from the group consisting of SiO2 particles, TiO2 particles, BaSO4 particles, Al2O3 particles, ZrO2 particles, and combinations thereof. The scattering particles are, in particular, homogeneously distributed in the conversion element.According to at least one embodiment of the optoelectronic component, the conversion element only partially converts the electromagnetic radiation of the first wavelength range into the electromagnetic radiation of the second wavelength range, wherein the unconverted portion of the electromagnetic radiation of the first wavelength range is transmitted through the conversion element. In other words, a partial conversion of the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second wavelength range takes place. In this case, the radiation-emitting component emits a mixed light composed of the electromagnetic radiation of the first wavelength range and the electromagnetic radiation of the second wavelength range. For example, the radiation-emitting component emits white mixed light.According to at least one embodiment of the optoelectronic component, no electromagnetic radiation of the first wavelength range is transmitted through the conversion element. "None" in this context means that so little electromagnetic radiation of the first wavelength range is transmitted that it no longer perceptibly influences the light emitted by the component. For example, at most 10%, in particular at most 5%, for example at most 1%, of the electromagnetic radiation of the first wavelength range is transmitted through the conversion element. The radiation-emitting component then emits only the electromagnetic radiation of the second wavelength range. In other words, a full conversion of the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second wavelength range takes place.According to at least one embodiment, the conversion element is free of another phosphor. “Free of another phosphor” means that only one phosphor described here or a mixture of different phosphors described here is contained in the conversion element and leads to a wavelength conversion. 2023PF00709 July 1, 2024 P2023,0785 WO N - 51 - According to at least one embodiment of the optoelectronic component, the conversion element has at least one further phosphor. In particular, the at least one further phosphor is different from the phosphor described here. However, it is also possible for the conversion element to have two different phosphors described here. In other words, the at least one further phosphor can be a phosphor described here, but which differs in composition from the phosphor.The at least one further phosphor converts, in particular, the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The third wavelength range is at least partially different from the second wavelength range and / or the first wavelength range. In particular, the optoelectronic component emits a mixed light composed of the electromagnetic radiation of the first wavelength range, the electromagnetic radiation of the second wavelength range, and / or the electromagnetic radiation of the third wavelength range. According to at least one embodiment, the phosphor is present in the conversion element as a ceramic or in a matrix material. A phosphor present as a ceramic is, in particular, largely free of the matrix material and / or the at least one further phosphor.The ceramic formed from the phosphor preferably has low porosity. This prevents or virtually prevents unwanted light scattering and ensures good heat dissipation. 2023PF00709 July 1, 2024 P2023,0785 WO N - 52 - According to at least one embodiment of the optoelectronic component, the at least one further phosphor is arranged in a separate layer. In other words, the phosphor and the at least one further phosphor are not mixed with one another. According to at least one embodiment, a layer comprising the phosphor is arranged next to, above, or below a layer comprising the at least one further phosphor. Above or below refers here and below to a direction perpendicular to a main extension plane of the radiation-emitting semiconductor chip.In particular, the layer with the phosphor and the layer with the at least one further phosphor are arranged laterally next to one another on the radiation-emitting semiconductor chip. In particular, the radiation-emitting semiconductor chip has pixels that can be controlled separately from one another. For example, a pixelated optoelectronic component can be provided by the layers with the phosphor and the at least one further phosphor arranged next to one another. Such a pixelated optoelectronic component can advantageously emit electromagnetic radiation with different wavelength ranges depending on the region. For example, such an optoelectronic component is suitable for use in a display. According to at least one embodiment of the optoelectronic component, the phosphor and the at least one further phosphor are mixed in the conversion element.In other words, the phosphor and the at least one further phosphor are not arranged in different layers. In particular, the phosphor and the at least one further phosphor form a homogeneous mixture. According to at least one embodiment of the optoelectronic component, the at least one further phosphor is a ceramic phosphor and / or a quantum dot phosphor. In particular, the at least one further phosphor is selected from the group formed by the following compounds or combinations of these compounds: Ce. 3+ doped garnets such as YAG and LuAG, for example (Y, Lu,Gd,Tb)3(Al 1-x Ga x )5O 12 :Ce 3+ , Eu 2+ doped nitrides, for example (Ca,Sr)AlSiN3:Eu 2+ , Sr(Ca,Sr)Si2Al2N6:Eu2+ (SCASN), (Sr,Ca)AlSiN3*Si2N2O:Eu 2+ , (Ca,Ba,Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+or SrLi2Al2O2N2:Eu 2+ , Ce 3+ doped nitrides, for example (Ca,Sr)Al (1-4x / 3) Si (1+x) N3:Ce 3+ (x = 0.2 – 0.5), Eu 2+ doped sulfides, (Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlONe, nitrido orthosilicates, e.g. AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x , orthosilicates such as (Ba,Sr,Ca)2SiO4:Eu 2+ , chlorosilicates, e.g. Ca8Mg(SiO4)4Cl2:Eu 2+ ), Mn 4+ doped fluorides, for example (K,Na)2(Si,Ti)F6:Mn 4+ , Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li3SiO4):E with E = Eu 2+ , Ce 3+ , (Sr,Li)Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+ . Further possible compounds for the at least one further phosphor are in particular the following aluminum-containing and / or silicon-containing phosphors: (Ba 1-x-y Sr x Ca y )SiO4:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba1-x- y Mr. x Here y )3SiO5:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li2SrSiO4:I 2+ , Oxo-Nitride wie (Ba 1-x-y Mr. x Here y )Si2O2N2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl2O3N2:I 2+ , Ba 4-x Here x Si6ON 10 :I 2+ (0 ≤ x ≤ 1), (Ba 1- (xSrx)Y2Si2Al2O2N5:Eu 2+ (0 ≤ x ≤ 1), SrxSi(6-y)AlyOyN(8-y):I 2+ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Si 6-z Al z THE z N 8-z :I 2+ (0 ≤ z ≤ 0.42), 2023PF00709 1. Juli 2024 P2023.0785 WO N - 54 - M x Yes 12-m-n Al m+n THE n N 16-n :I 2+ (M = Li, Mg, Ca, Y; x = m / v; v = Wertigkeit von M, x ≤ 2), M x Yes 12-m-n Al m+n THE n N 16-n :Ce 3+ , AE 2-x- a RE x I a Yes 1-y THE 4-x-2y N x(AE = Sr, Ba, Ca, Mg; RE = Seltenerdelemente), AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Seltenerd elements), Ba3Si6O 12 N2:Me 2+ or nitrides such as La3Si6N 11 :What 3+ , (At 1-x Y x )3Si6N 11 :What 3+ , (Ba 1-x-y Sr. x That y )2Si5N8:I 2+ , (As 1-x-y Sr. x nay y )AlSiN3:I 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), Sr(Sr 1- x That x )Al2Si2N6:I 2+ (0 ≤ x ≤ 0.2), Sr(Sr 1-x That x )Al2Si2N6:Ce 3+ (0 ≤ x ≤ 0.2) SrAlSi4N7:Eu 2+ , (Ba 1-x-y Sr. x That y )SiN2:I 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Sr. x That y )SiN2:Ce 3+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Sr 1- x That x )LiAl3N4:I 2+ (0 ≤ x ≤ 1), (Ba 1-x-y Sr. x That y)Mg2Al2N4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Sr x Ca y )Mg3SiN4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1). According to at least one embodiment, the optoelectronic component emits white mixed light. Such an optoelectronic component can be used in general lighting, for high-performance LEDs, for example for car headlights, or in projection applications, for example in projectors. In particular, the optoelectronic component that emits white mixed light has only the phosphor described here in the conversion element. However, it is also possible for the conversion element of the optoelectronic component to comprise the at least one further phosphor. For example, the phosphor, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, with MC being Gd, Dy, Y, Ho, Tb, Lu, Sm, Yb, Tm, or Pr and / or E being Ce 3+ and / or Eu 2+in the optoelectronic component that emits white mixed light. 2023PF00709 July 1, 2024 P2023,0785 WO N - 55 - According to at least one embodiment, the optoelectronic component has a color rendering index (CRI) of at least 70. The color rendering index is a value that indicates how the color rendering of an artificial light source compares to natural light, for example sunlight. For example, the phosphor described here, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, where E is Ce 3+and MC is Ho, Tb, Lu, Tm, Sm or Pr. Advantageously, to achieve a CRI of at least 70, only the phosphor described here and no phosphor mixture is required. Optoelectronic components with a CRI of at least 70 are used, for example, in street lighting. According to at least one embodiment, the optoelectronic component has a CRI of at least 90. In particular, the phosphor and the at least one further phosphor are used in the conversion element of the optoelectronic component with a CRI of at least 90. For example, the conversion element of the optoelectronic component has a green to yellow emitting phosphor and a red emitting phosphor. Optoelectronic components with a CRI of at least 90 can advantageously be used for general lighting or shop lighting.Conventional green to yellow-emitting garnet phosphors can advantageously be replaced by the phosphor with green to yellow emission described here. It is possible that the phosphor described here (2023PF00709 July 1, 2024 P2023,0785 WO N - 56 -) has a similar dominant wavelength to the garnet phosphor. Thus, comparable color coordinates can advantageously be achieved with the phosphor described here. For example, the phosphor with the molecular formula Li8MC[LiSi4N4O8]:E, where E is Ce, is used. 3+ , Eu 2+ or Mn 2+ as a green to yellow-emitting phosphor. Furthermore, it is possible to replace conventional red-emitting phosphors with the red-emitting phosphor described here. The phosphor has the molecular formula Li8MC[LiSi4N4O8]:E, where E is Eu. 2+ , Mn 2+ or Mn 4+can be used as a red-emitting phosphor. Advantageously, the optoelectronic component can also have an increased R9 value in addition to a high CRI. For example, the optoelectronic component for this purpose comprises a conversion element with a green to yellow-emitting phosphor and a red-emitting phosphor. In particular, the red-emitting phosphor is adapted and / or selected such that the increased R9 value is achieved. The R9 value describes the specific ability of the light to accurately reproduce the red color of objects. According to at least one embodiment, the optoelectronic component is used in a display. In particular, the optoelectronic component is used as a backlighting unit of the display. For example, the conversion element of the optoelectronic component comprises the phosphor described here, in particular with the empirical formula Li8MC[LiSi4N4O8]:E, where E is Mn4+ on. The Mn 4+ The activated phosphor advantageously has a narrowband emission. Therefore, a high color gamut can be achieved for the display. The color gamut is also referred to as the color range. The color gamut comprises the set of all colors of a color space that can be reproduced by a device, such as the display. According to at least one embodiment, the optoelectronic component emits electromagnetic radiation in the wavelength range from 650 nanometers to 780 nanometers inclusive. In other words, the optoelectronic component can emit long-wave red light. For example, the phosphor, in particular with the molecular formula Li8MC[LiSi4N4O8]:E, with E equal to Eu 2+ or Mn 4+used in such an optoelectronic component. Chlorophyll, for example, has an absorption peak in the range between 650 and 700 nanometers inclusive. Therefore, the optoelectronic component can advantageously be used for illuminating greenhouses, i.e., in horticulture. According to at least one embodiment of the optoelectronic component, the conversion element comprises the phosphor described here with an emission peak in the near-infrared to infrared wavelength range of the electromagnetic spectrum. A common method for analyzing the composition of organic substances, for example, food or polymers, is to record the absorption and / or transmission of infrared or near-infrared radiation. Infrared or near-infrared radiation excites vibration modes in the material under investigation, which is described in 2023PF00709 1.July 2024 P2023,0785 WO N - 58 - characteristic absorption bands. Due to the emission in the near-infrared to infrared wavelength range, the optoelectronic component, in particular with the phosphor described here, can be used with Cr. 3+as an activator element or with MC = Nd, advantageously used as a light source in a corresponding, for example, small, handy, and portable, analysis device or spectrometer. The optoelectronic component can be combined with a silicon detector that covers the near-infrared to infrared wavelength range and can be manufactured inexpensively. Advantageously, the optoelectronic component can also be used for sensor applications in portable devices and industrial machines where a compact, broadband infrared light source is required. Halogen lamps are conventionally used as broadband infrared light sources. In comparison, the optoelectronic component described here has significantly smaller dimensions. Furthermore, heat generation is advantageously moderate, and a pulsed operating mode is possible.In addition, a broad emission spectrum of approximately continuous intensity can be achieved, for example by using a mixture of several phosphors. Further advantageous embodiments, configurations, and developments of the phosphor, the method for producing a phosphor, and the optoelectronic component emerge from the following exemplary embodiments illustrated in conjunction with the figures. 2023PF00709 July 1, 2024 P2023,0785 WO N - 59 - Figure 1 shows a schematic view of a phosphor according to an exemplary embodiment. Figure 2 shows a secondary electron image of crystals of a phosphor according to an exemplary embodiment. Figures 3 to 9 show schematic sections of a host structure of a phosphor according to an exemplary embodiment. Figure 10 shows a refined powder diffractogram of a phosphor according to an exemplary embodiment.Figure 11 shows an excitation spectrum and an emission spectrum of a phosphor according to an embodiment. Figure 12 shows emission spectra of a phosphor according to an embodiment and a comparative example. Figure 13 shows the temperature behavior of a phosphor according to an embodiment. Figures 14, 15A and 15B show emission spectra of a phosphor according to various embodiments. Figure 16 schematically shows various steps of a method for producing a phosphor according to an embodiment. Figures 17 to 22 show schematic sectional views of optoelectronic components according to various embodiments. 2023PF00709 July 1, 2024 P2023,0785 WO N - 60 - Figures 23 to 25 show simulated emission spectra of optoelectronic components according to various embodiments and according to various comparative examples.Figure 26 shows a refined powder diffractogram of a phosphor according to an embodiment. Figure 27 shows an excitation spectrum and an emission spectrum of a phosphor according to an embodiment. Figure 28 shows emission spectra of phosphors according to an embodiment and a comparative example. Figure 29 shows the temperature behavior of a phosphor according to an embodiment. Figure 30 shows powder diffractograms of a phosphor according to an embodiment. Figure 31 shows an emission spectrum of a phosphor according to an embodiment. Figures 32 to 36 show simulated emission spectra of optoelectronic components according to various embodiments and according to various comparative examples. Figures 37A, 37B, and 37C show a secondary electron image of crystals of a phosphor according to an embodiment. 2023PF00709 1.July 2024 P2023,0785 WO N - 61 - Figure 38 shows powder diffractograms of a phosphor according to an embodiment. Figures 39A, 39B and 40 show emission spectra of phosphors according to various embodiments. Figure 41 shows simulated emission spectra of optoelectronic components according to various embodiments. Figure 42 shows a secondary electron image of crystals of a phosphor according to an embodiment. Figure 43 shows powder diffractograms of a phosphor according to an embodiment. Figures 44 and 45A to 45D show emission spectra of a phosphor according to an embodiment. Figure 46 shows a secondary electron image of crystals of a phosphor according to an embodiment. Figure 47 shows powder diffractograms of a phosphor according to an embodiment. Figure 48 shows an excitation spectrum and an emission spectrum of a phosphor according to an embodiment. 2023PF00709 1.July 2024 P2023,0785 WO N - 62 - Figure 49A shows emission spectra of phosphors according to various embodiments and a comparative example. Figure 49B shows emission spectra of phosphors according to various embodiments. Figure 50 shows the temperature behavior of a phosphor according to an embodiment and a comparative example. Figures 51 to 53 show simulated emission spectra of optoelectronic components according to various embodiments and according to various comparative examples. Figures 54A and 54B show emission spectra of a phosphor according to an embodiment. Figure 55 shows a logarithmic plot of an emission intensity of a phosphor according to an embodiment against time. Figure 56 shows emission spectra of phosphors according to various embodiments. Figure 57 shows a secondary electron image of a phosphor according to an embodiment.Figure 58 shows powder diffractograms of a phosphor according to an embodiment. Figure 59 shows emission spectra of a phosphor according to an embodiment. 2023PF00709 July 1, 2024 P2023,0785 WO N - 63 - Figure 60 shows an emission spectrum and an excitation spectrum of a phosphor according to an embodiment. Figure 61 shows the temperature behavior of a phosphor according to an embodiment. Figure 62 shows simulated emission spectra of optoelectronic components according to an embodiment and according to various comparative examples. Figure 63 shows a secondary electron image of a phosphor according to an embodiment. Figure 64 shows powder diffractograms of a phosphor according to an embodiment. Figure 65 shows a refined powder diffractogram of a phosphor according to an embodiment. Figure 66 shows emission spectra of a phosphor according to an embodiment.Figure 67 shows an emission spectrum and excitation spectra of a phosphor according to an embodiment. Figure 68 shows the temperature behavior of a phosphor according to an embodiment. Figure 69 shows simulated emission spectra of optoelectronic components according to an embodiment and according to various comparative examples. Figure 70 shows a secondary electron image of a phosphor according to an embodiment. Figure 71 shows powder diffractograms of a phosphor according to an embodiment. Figures 72 to 75 show emission spectra of a phosphor according to an embodiment. Figures 76A and 76B show secondary electron images of a phosphor according to an embodiment. Figure 77 shows powder diffractograms of a phosphor according to an embodiment.Figure 78 shows an excitation spectrum and an emission spectrum of a phosphor according to an embodiment. Figure 79 shows emission spectra of a phosphor according to an embodiment. Figure 80 shows emission spectra of a phosphor according to an embodiment and various comparative examples. Figure 81 shows the temperature behavior of a phosphor according to an embodiment. 2023PF00709 July 1, 2024 P2023,0785 WO N - 65 - Figure 82 shows simulated emission spectra of optoelectronic components according to an embodiment and according to various comparative examples. Figure 83 shows a secondary electron image of a phosphor according to an embodiment. Figure 84 shows powder diffractograms of a phosphor according to an embodiment. Figure 85 shows an emission spectrum of a phosphor according to an embodiment. Figure 86 shows a secondary electron image of a phosphor according to an embodiment.Figure 87 shows powder diffractograms of a phosphor according to one embodiment. Figure 88 shows emission spectra of a phosphor according to various embodiments. Figure 89 shows simulated emission spectra of optoelectronic components according to one embodiment and according to various comparative examples. Figure 90 shows emission spectra of a phosphor according to various embodiments. Identical, similar, or similarly acting elements are provided with the same reference numerals in the figures. The figures 2023PF00709 July 1, 2024 P2023,0785 WO N - 66 - and the size ratios of the elements shown in the figures to one another are not to be regarded as being to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representation and / or better understanding. The embodiment of the phosphor 1 in Figure 1 has the empirical formula Li. 8-2x-a MB x+c MFa MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, where 0 ≤ x ≤ 4, 0 ≤ c ≤ 1, 0 ≤ z ≤ 4, 0 ≤ a ≤ 8, 0 ≤ b ≤ 4, 0 ≤ 2x+a ≤ 8, 0 ≤ z+b ≤ 4, -4 ≤ -z+bc ≤ 4, MB is an element or a combination of elements selected from the group of divalent elements, MC is an element or a combination of elements selected from the group of trivalent elements, MA is Li and / or Na, MD is an element or a combination of elements selected from the group of tetravalent elements, ME is an element or a combination of elements selected from the group of trivalent elements, MF is an element or a combination of elements selected from the group of monovalent elements, MG is an element or a combination of elements selected from the group of pentavalent elements, and E is an activator element. The phosphor 1 is present in the form of particles having a grain size in the range between 500 nanometers and 50 micrometers.Figure 2 shows a secondary electron image of crystals of a phosphor 1 according to another embodiment. The phosphor 1 has the molecular formula Li8Gd[LiSi4N4O8]:Ce. 3+ The secondary electron image is the result of a scanning electron microscope (SEM) examination at an accelerating voltage of 3 kV. The scale is shown in Figure 2, bottom left. The phosphor 1 is present as isolated, cuboid-shaped crystals. Table 1 summarizes the crystallographic data for the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce3+. The activator element Ce 3+was not considered in the refinement due to its low concentration and small scattering contribution. Table 1 shows the measured section of the reciprocal space across the boundaries of the corresponding Miller indices (hkl). Furthermore, the conventional R-value of all reflections R1 is given, which indicates the mean percentage deviation between observed and calculated structure factors. The weighted R-value wR2 contains a weighting factor that weights the reflections according to a defined scheme, depending, among other things, on their standard deviation. For a good structural model, R1 should be below 5% and wR2 below 10%. Another quality characteristic for the agreement between calculated and measured structure is the goodness of fit (GooF), which should be close to 1.Table 1: Crystallographic data for Li8Gd[LiSi4N4O8]:Ce3+ Molecular formula Li8Gd[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9322(8) c / Å 5.0482(6) Cell volume / Å. 3 498.00(8) T / K 297(2) 2023PF00709 1 July 2024 P2023.0785 WO N - 68 - Radiation / Å Mo-Kα (λ = 0.71073) Measurement range 2.9 ° < θ < 37.76 ° - 17 ≤ h ≤ 16 - 16 ≤ k ≤ 13 - 8 ≤ l ≤ 7 Number of total reflections 12572 Independent reflections 1303 Number of parameters 60 Δρ max , Δρ min / eÅ −3 3.56 / -1.47 R1(I ≥ 2σ(I) / all) 0.0335 / 0.0489 wR2(I ≥ 2σ(I) / all) 0.0664 / 0.0718 GooF 1.15 Table 2 shows the crystallographic position parameters of Li8Gd[LiSi4N4O8]:Ce 3+The Wyckoff position describes the symmetry of the point positions according to RWG Wyckoff. x, y, and z indicate the atomic positions. Table 2: Atomic positions of Li8Gd[LiSi4N4O8]:Ce3+ Atom Wyckoff- xy ZU Occupation Position (Occ) Gd1 2c 0 0.5 0.11494(6) 0.00945(5) 1 Si1 8g 0.21321(9) 0.46576(9) 0.6722(2) 0.0083(2) 1 O2 8g 0.7947(2) 0.5399(2) 0.3461(4) 0.0099(5) 1 O1 8g 0.3697(2) 0.4403(3) 0.7634(5) 0.0108(5) 1 N1 8g 0.1641(3) 0.6186(3) 0.8033(5) 0.0105(6) 1 Li1 8g 0.1609(8) 0.2640(8) 0.221(2) 0.020(2) 1 Li2 8g 0.3702(8) 0.430(2) 0.152(2) 0.025(2) 1 Li3 2b 0.5 0.5 0.5 0.020(3) 1 The composition of the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analyses (SEM-EDX analyses) averaged over four measurements. The SEM-EDX analyses showed a 2023PF00709 1 July 2024 P2023,0785 WO N - 69 - ratio (Gd+Ce):Si of 1:4.1(5), which, within the measurement error, corresponds to the composition of the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ Table 3 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 4 shows the crystallographic position parameters of Li8Dy[LiSi4N4O8]:Ce 3+ Table 3: Crystallographic data for Li8Dy[LiSi4N4O8]:Ce3+ Molecular formula Li8Dy[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9423(2) c / Å 5.0520(2) Cell volume / Å 3499.39(2) T / K 284 Radiation / Å Mo-Kα (λ = 0.71073) Measurement range 2.9 ° < θ < 42.15 ° - 18 ≤ h ≤ 18 - 18 ≤ k ≤ 18 - 9 ≤ l ≤ 9 Number of total reflections 25467 Independent reflections 1523 Number of parameters 60 Δρ max , Δρ min / eÅ −3 2.70 / -2.38 R1(I ≥ 2σ(I) / all) 0.0300 / 0.0375 wR2(I ≥ 2σ(I) / all) 0.0559 / 0.0575 GooF 1.43 Table 4: Atomic positions of Li8Dy[LiSi4N4O8]:Ce 3+ 2023PF00709 July 1, 2024 P2023,0785 WO N - 70 - Atom Wyckoff- x U Occupation Position (Occ) Dy1 2c 1 / 2 0 0.11522(4) 0.00818(4) 1 Si1 8g 0.28660(5) 0.96575(5) 0.6721(2) 0.0060(2) 1 O1 8g 0.1298(2) 0.9405(2) 0.7631(3) 0.0084(3) 1 O2 8g 0.4605(2) 0.2051(2) 0.3452(3) 0.0080(3) 1 N1 8g 0.6189(2) 0.1639(2) 0.8035(4) 0.0092(4) 1 Li1 8g 0.1597(5) 0.7365(4) 0.7792(2) 0.018(2) 1 Li2 8g 0.1299(5) 0.9332(6) 0.153(2) 0.023(2) 1 0 0 Li3 2b 1 / 2 0.016(2) 1 The composition of the phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis3+ was confirmed by energy-dispersive X-ray analyses (SEM-EDX analyses) averaged over two particles at an acceleration voltage of 25 kV. The SEM-EDX analyses showed a ratio (Dy+Ce):Si of 1:4.2(1), which, within the measurement error, corresponds to the composition of phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ confirmed. Table 5 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 6 shows the crystallographic position parameters of Li8Nd[LiSi4N4O8]:Ce 3+ . Table 5: Crystallographic data for Li8Nd[LiSi4N4O8]:Ce 3+Molecular formula Li8Nd[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) 2023PF00709 1 July 2024 P2023,0785 WO N - 71 - a / Å 9.9707(2) c / Å 5.1081(2) Cell volume / Å 3 507.82(2) T / K 293 Radiation / Å Mo-Kα (λ = 0.71073) Measurement range 2.89 ° < θ < 42.13 ° - 18 ≤ h ≤ 18 - 18 ≤ k ≤ 17 - 9 ≤ l ≤ 9 Number of total reflections 28680 Independent reflections 1711 Number of parameters 60 Δρ max , Δρ min / eÅ −31.76 / -0.81 R1(I ≥ 2σ(I) / all) 0.0149 / 0.0159 wR2(I ≥ 2σ(I) / all) 0.0357 / 0.0360 GooF 1.20 Table 6: Atomic positions of Li 3+ 8Nd[LiSi4N4O8]:Ce atom Wyckoff- xyz U Occupancy Position (Occ) Nd1 2c 0 1 / 2 0.11560(2) 0.00567(2) 1 Si1 8g 0.96802(3) 0.71438(3) 0.67072(5) 0.00509(5) 1 O1 8g 0.94351(7) 0.87017(6) 0.7658(2) 0.0074(2) 1 O2 8g 0.03779(7) 0.29086(7) 0.3474(2) 0.0077(2) 1 N1 8g 0.87885(8) 0.33601(8) 0.7973(2) 0.0078(2) 1 Li1 8g 0.7375(2) 0.8359(3) 0.7740(6) 0.0209(6) 1 Li2 8g 0.0642(3) 0.1298(2) 0.1476(5) 0.0193(6) 1 Li3 2b 0 0 1 / 2 0.0134(7) 1 Table 7 shows crystallographic data for the phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ summarized. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 8 2023PF00709 1 July 2024 P2023,0785 WO N - 72 - shows the crystallographic position parameters of Li8Ho[LiSi4N4O8]:Ce 3+Table 7: Crystallographic data for Li8Ho[LiSi4N4O8]:Ce3+ Molecular formula Li8Ho[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9117(3) c / Å 5.0278(3) Cell volume / Å 3 493.94(4) T / K 173(2) Radiation / Å Mo K-L3(λ = 0.71073) Measurement range 2.91 ° ​​< θ < 38.55 ° - 16 ≤ h ≤ 17 - 12 ≤ k ≤ 17 - 8 ≤ l ≤ 8 Number of total reflections 8021 Independent reflections 1377 Number of parameters 60 Δρ max , Δρ min / eÅ −3 2.12 / -1.06 R1(I ≥ 2σ(I) / all) 0.0229 / 0.0262 wR2(I ≥ 2σ(I) / all) 0.0447 / 0.0459 GooF 1.10 Table 8: Atomic positions of Li8Ho[LiSi4N4O8]:Ce3+ atom Wyckoff- x z U Occupation Position (Occ.) Ho1 2c 1 / 2 0.88559(3) 0.00547(3) 1 Si1 8g 0.28691(5) 0.96524(5) 0.3271(2) 0.0044(2) 1 O1 8g 0.2963(2) 0.9606(2) 0.6549(2) 0.0061(3) 1 O2 8g 0.1290(2) 0.9398(2) 0.2372(3) 0.0063(3) 1 N1 8g 0.3815(2) 0.8351(2) 0.1935(3) 0.0059(3) 1 Li1 8g 0.1304(4) 0.9301(5) 0.8495(8) 0.016(2) 1 Li2 8g 0.3410(4) 0.7653(4) 0.7795(8) 0.013(2) 1 Li3 2b 0 0 1 / 2 0.020(3) 1 2023PF00709 July 1, 2024 P2023,0785 WO N - 73 - Table 9 summarizes the crystallographic data for the phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 10 shows the crystallographic position parameters of Li8Pr[LiSi4N4O8]:Ce 3+ Table 9: Crystallographic data for Li8Pr[LiSi4N4O8]:Ce3+ Molecular formula Li8Pr[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9570(3) c / Å 5.1203(2) Cell volume / Å 3507.64(3) T / K 173(2) Radiation / Å Mo K-L3(λ = 0.71073) Measurement range 2.89 ° < θ < 39.44 ° - 17 ≤ h ≤ 17 - 17 ≤ k ≤ 17 - 8 ≤ l ≤ 9 Number of total reflections 9458 Independent reflections 1500 Number of parameters 60 Δρ max , Δρ min / eÅ −3 1.45 / -0.81 R1(I ≥ 2σ(I) / all) 0.0175 / 0.0200 wR2(I ≥ 2σ(I) / all) 0.0386 / 0.0397 GooF 1.08 Table 10: Atomic positions of Li8Pr[LiSi4N4O8]:Ce3+ atom Wyckoff- xyz U Occupation Position (Occ.) Pr1 2c 1 / 2 0 0.38435(2)0.00373(3) 1 Si1 8g 0.28511(3) 0.03094(3) 0.82912(6)0.00356(7) 1 2023PF00709 1 July 2024 P2023,0785 WO N - 74 - O1 8g 0.29009(9) 0.0368(2) 0.1515(2) 0,0055(2) 1 O2 8g 0.12911(8) 0.05551(9) 0.7333(2) 0,0051(2) 1 N1 8g 0.6222(2) 0.8364(2) 0.7029(2) 0,0054(2) 1 Li2 8g 0.1292(3) 0.0618(3) 0.3521(5) 0,0126(6) 1 Li1 8g 0.1660(3) 0.2626(3) 0.7253(6) 0,0137(6) 1 Li3 2a 0 0 0 0,0105(9) 1Table 11 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 12 shows the crystallographic position parameters of Li8Y[LiSi4N4O8]:Ce 3+ Table 11: Crystallographic data for Li8Y[LiSi4N4O8]:Ce 3+ Molecular formula Li8Y[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9152(6) c / Å 5.0240(5) Cell volume / Å 3 493.92(6) T / K 173(2) Radiation / Å Mo K-L3(λ = 0.71073) Measurement range 2.91 ° ​​< θ < 36.39 ° - 16 ≤ h ≤ 16 - 16 ≤ k ≤ 15 - 8 ≤ l ≤ 8 Number of total reflections 15092 Independent reflections 1063 Number of parameters 60 Δρ max , Δρ min / eÅ −30.70 / -0.57 R1(I ≥ 2σ(I) / all) 0.0350 / 0.0480 wR2(I ≥ 2σ(I) / all) 0.0656 / 0.0691 GooF 1.32 Table 12: Atomic positions of Li8Y[LiSi4N4O8]:Ce3+ 2023PF00709 July 1, 2024 P2023.0785 WO N - 75 - Atom Wyckoff- xz U Occupation Position Occ. Y1 2c 0 1 / 2 0.11592(8) 0.00835(8) 1 Si1 8g 0.21268(5) 0.46483(6) 0.6741(2) 0.0085(2) 1 O1 8g 0.2027(2) 0.4601(2) 0.3446(3) 0.0104(4) 1 O2 8g 0.3708(2) 0.4387(2) 0.7624(3) 0.0109(4) 1 N1 8g 0.1653(2) 0.6179(2) 0.8099(4) 0.0106(4) 1 Li2 8g 0.3705(4) 0.4297(5) 0.1570(9) 0.020(2) 1 Li1 8g 0.3408(4) 0.2348(4) 0.7819(8) 0.017(2) 1 Li3 2b 1 / 2 1 / 2 1 / 2 0.017(2) 1 Table 13 summarizes the crystallographic data for the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 14 shows the crystallographic position parameters of Li8Tm[LiSi4N4O8]:Ce 3+Table 13: Crystallographic data for Li8Tm[LiSi4N4O8]:Ce 3+ Molecular formula Li8Tm[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9226(3) c / Å 5.0054(3) Cell volume / Å 3 492.82(4) T / K 301 radiation / Å Mo KL 2,3 (λ = 0.71073) Measuring range 2.9 ° < θ < 36.32 ° - 15 ≤ h ≤ 16 - 16 ≤ k ≤ 16 - 8 ≤ l ≤ 8 Number of total reflections 18555 Independent reflections 1143 Number of parameters 60 Δρ max , Δρ min / eÅ −3 1.59 / -1.35 2023PF00709 July 1, 2024 P2023,0785 WO N - 76 - The composition of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an accelerating voltage of 20 kV. The SEM-EDX analysis showed a ratio (Tm+Ce):Si of 1:4.0(1), which, within the measurement error, confirms the composition of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce3+. Table 15 shows crystallographic data for phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ summarized. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 16 shows the crystallographic position parameters of Li8Tb[LiSi4N4O8]:Ce 3+ Table 15: Crystallographic data for Li8Tb[LiSi4N4O8]:Ce3+ 2023PF00709 1 July 2024 P2023,0785 WO N - 77 - Molecular formula Li8Tb[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9441(3) c / Å 5.0353(2) Cell volume / Å 3497.92(3) T / K 300(2) Radiation / Å Mo KL 2,3 (λ = 0.71073) Measurement range 2.9 ° < θ < 37.95 ° - 17 ≤ h ≤ 17 - 17 ≤ k ≤ 17 - 8 ≤ l ≤ 8 Number of total reflections 18134 Independent reflections 1267 Number of parameters 60 Δρ max , Δρ min / eÅ −3 1.62 / -0.80 R1(I ≥ 2σ(I) / all) 0.0137 / 0.0140 wR2(I ≥ 2σ(I) / all) 0.0329 / 0.0331 GooF 1.26 Table 16: Atomic positions of Li8Tb[LiSi4N4O8]:Ce3+ atom Wyckoff x Occupation Position (Occ.) Tb1 2c 0 1 / 2 0.88397(2) 0.00763(2) 1 Si1 8g 0.21301(3) 0.46526(3) 0.32727(6) 0.00703(6) 1 O2 8g 0.20425(8) 0.46018(8) 0.6546(2) 0.0091(2) 1 O1 8g 0.36976(7) 0.43978(8) 0.2366(2) 0.0096(5) 1 N1 8g 0.11812(9) 0.33567(9) 0.1952(2) 0.0099(2) 1 Li1 8g 0.3409(3) 0.2352(2) 0.7819(6) 0.0206(6) 1 Li2 8g 0.3712(3) 0.4326(4) 0.849(7) 0.0268(8) 1 Li3 2b 1 / 2 1 / 2 1 / 2 0.0190(9) 1 The composition of the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an acceleration voltage of 20 kV. The SEM-EDX analysis showed a ratio (Tb+Ce):Si of 1:4.0(4) averaged over three particles, which, within the measurement error, indicates the composition of phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ Averaged over two positions within a single crystal, the SEM-EDX analysis at an acceleration voltage of 25 kV showed a ratio (Tb+Ce):Si of 1:3.7(1), which also confirms, within the measurement error, the composition of phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ confirmed. Table 17 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce3+. The activator element Ce 3+was not considered in the refinement due to its low concentration and small scattering contribution. Table 18 shows the crystallographic position parameters of Li8Er[LiSi4N4O8]:Ce 3+ Table 17: Crystallographic data for Li8Er[LiSi4N4O8]:Ce3+ Molecular formula Li8Er[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.937(2) c / Å 5.008(2) Cell volume / Å 3 494.5(2) T / K 173 radiation / Å Mo KL 2,3 (λ = 0.71073) Measuring range 2.9 ° < θ < 35.29 ° - 15 ≤ h ≤ 14 - 16 ≤ k ≤ 16 - 8 ≤ l ≤ 6 Number of total reflections 6664 Independent reflections 1032 Number of parameters 60 Δρ max , Δρ min / eÅ −31.04 / -1.21 2023PF00709 July 1, 2024 P2023.0785 WO N - 79 - R1(I ≥ 2σ(I) / all) 0.0382 / 0.0557 wR2(I ≥ 2σ(I) / all) 0.0757 / 0.0813 GooF 1.21 Table 18: Atomic positions of Li 3+ 8Er[LiSi4N4O8]:Ce Atom Wyckoff- xyz U Occupation Position (Occ.) Er1 2c 1 / 2 0 0.11547(9) 0.01214(9) 1 Si1 8g 0.2875(2) 0.0358(2) 0.6741(3) 0.0116(3) 1 O1 8g 0.2982(3) 0.0394(3) 0.3460(6) 0.0123(8) 1 O2 8g 0.1299(3) 0.0626(4) 0.7626(7) 0.0138(9) 1 N1 8g 0.3827(4) 0.1640(4) 0.8112(8) 0.014(2) 1 Li1 8g 0.1293(8) 0.069(2) 0.164(2) 0.024(3) 1 Li2 8g 0.157(2) 0.2657(9) 0.786(2) 0.023(3) 1 Li3 2b 0 0 1 / 2 0.023(5) 1 The composition of the phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an acceleration voltage of 20 kV. The SEM-EDX analysis showed an average ratio (Er+Ce):Si of 1:4.2(3) over two particles, which, within the measurement error, corresponds to the composition of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ confirmed. Table 19 shows crystallographic data for the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ summarized. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 20 shows the crystallographic position parameters of Li8Lu[LiSi4N4O8]:Ce 3+ Table 19: Crystallographic data for Li8Lu[LiSi4N4O8]:Ce3+ 2023PF00709 1 July 2024 P2023,0785 WO N - 80 - Molecular formula Li8Lu[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.8968(4) c / Å 4.9866(3) Cell volume / Å3 488.42(4) T / K 173(2) Radiation / Å Mo KL 2,3 (λ = 0.71073) Measurement range 2.91 ° ​​< θ < 37.86 ° - 17 ≤ h ≤ 16 - 17 ≤ k ≤ 16 - 8 ≤ l ≤ 8 Number of total reflections 11840 Independent reflections 1271 Number of parameters 60 Δρ max , Δρ min / eÅ −3 2.88 / -3.10 R1(I ≥ 2σ(I) / all) 0.0218 / 0.0239 wR2(I ≥ 2σ(I) / all) 0.0508 / 0.0517 GooF 1.30 Table 20: Atomic positions of Li8Lu[LiSi4N4O8]:Ce3+ atom Wyckoff x z U Occupation Position (Occ.) Lu1 2c 0 1 / 2 0.38521(3) 0.00631(4) 1 Si1 8g 0.21235(6) 0.46410(6) 0.8256(2) 0.0046(2) 1 O2 8g 0.2006(2) 0.4595(2) 0.1557(3) 0.0062(3) 1 O1 8g 0.3704(2) 0.4378(2) 0.7388(3) 0.0064(3) 1 N1 8g 0.1166(2) 0.3357(2) 0.6895(3) 0.0067(3) 1 Li1 8g 0.3432(4) 0.2337(4) 0.716(2) 0.013(2) 1 Li2 8g 0.3700(5) 0.4299(6) 0.348(2) 0.020(2) 1 Li3 2b 1 / 2 1 / 2 0 0.015(2) 1 The composition of the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an acceleration voltage of 25 kV. The SEM-EDX analysis showed a ratio (Lu+Ce):Si of 1:4.0(1) averaged over two particles, which, within the measurement error, indicates the composition of phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ confirmed. Table 21 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 22 shows the crystallographic position parameters of Li8Yb[LiSi4N4O8]:Ce 3+ Table 21: Crystallographic data for Li8Yb[LiSi4N4O8]:Ce3+ Molecular formula Li8Yb[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.936(2) c / Å 5.0002(8) Cell volume / Å 3493.6(2) T / K 153(2) radiation / Å Mo KL 2,3 (λ = 0.71073) Measuring range 2.9 ° < θ < 33.23 ° - 15 ≤ h ≤ 15 - 15 ≤ k ≤ 13 - 7 ≤ l ≤ 7 Number of total reflections 5704 Independent reflections 888 Number of parameters 60 Δρ max , Δρ min / eÅ −3 2.07 / -1.38 R1(I ≥ 2σ(I) / all) 0.0314 / 0.0387 wR2(I ≥ 2σ(I) / all) 0.0646 / 0.0669 GooF 1.27 Table 22: Atomic positions of Li8Yb[LiSi4N4O8]:Ce3+ 2023PF00709 July 1, 2024 P2023.0785 WO N - 82 - Atom Wyckoff- xyz U Occupation Position (Occ.) Yb1 2c 1 / 2 0 0.11571(8) 0.00993(8) 1 Si1 8g 0.7126(2) 0.0355(2) 0.6743(2) 0.0068(2) 1 O1 8g 0.7010(3) 0.0399(3) 0.3455(6) 0.0090(7) 1 O2 8g 0.8700(3) 0.0621(3) 0.7622(6) 0.0096(7) 1 N1 8g 0.6173(3) 0.1632(3) 0.8093(7) 0.0093(8) 1 Li1 8g 0.8416(8) 0.2655(7) 0.789(2) 0.015(2) 1 Li2 8g 0.8728(9) 0.064(2) 0.160(2) 0.027(3) 1 Li3 2b 0 0 1 / 2 0.022(4) 1 The composition of the phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce, determined by X-ray crystal structure analysis 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an acceleration voltage of 25 kV. The SEM-EDX analysis showed a ratio (Yb+Ce):Si of 1:4.0(2) averaged over two particles and five measurement points, which, within the measurement error, indicates the composition of phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ confirmed. Table 23 summarizes the crystallographic data for phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce3+. The activator element Ce 3+ was not considered in the refinement due to its low concentration and small scattering contribution. Table 24 shows the crystallographic position parameters of Li8Sm[LiSi4N4O8]:Ce 3+ Table 23: Crystallographic data for Li8Sm[LiSi4N4O8]:Ce 3+Molecular formula Li8Sm[LiSi4N4O8] Crystal system tetragonal Space group P4 / n (No. 85) a / Å 9.9387(2) 2023PF00709 1 July 2024 P2023,0785 WO N - 83 - c / Å 5.0672(2) Cell volume / Å 3 500.53(2) T / K 173(2) radiation / Å Mo KL 2,3 (λ = 0.71073) Measuring range 2.9 ° < θ < 38.58 ° - 17 ≤ h ≤ 17 - 16 ≤ k ≤ 17 - 7 ≤ l ≤ 8 Number of total reflections 11972 Independent reflections 1392 Number of parameters 60 Δρ max , Δρ min / eÅ −30.78 / -0.82 R1(I ≥ 2σ(I) / all) 0.0180 / 0.0200 wR2(I ≥ 2σ(I) / all) 0.0193 / 0.0197 GooF 1.04 Table 24: Atomic positions of Li 3+ 8Sm[LiSi4N4O8]:Ce Wyckoff Occupation Atom xyz U Position (Occ.) Sm1 2c 1 / 2 0 0.11609(3) 0.00382(3) 1 Si1 8g 0.28588(4) 0.96707(4) 0.67207(8) 0.00359(8) 1 O2 8g 0.2928(2) 0.9616(2) 0.3469(2) 0.0051(2) 1 O1 8g 0.1295(2) 0.9419(2) 0.7654(2) 0.0053(2) 1 N1 8g 0.3799(2) 0.8358(2) 0.8018(2) 0.0054(3) 1 Li1 8g 0.1634(3) 0.7365(3) 0.7794(7) 0.0133(8) 1 Li2 8g 0.1297(3) 0.9355(4) 0.1496(6) 0.0151(8) 1 Li3 2b 0 0 1 / 2 0.011(2) 1 The composition of the Phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+was confirmed by energy-dispersive X-ray analysis (SEM-EDX analysis) at an accelerating voltage of 25 kV. The SEM-EDX analysis showed a ratio (Sm+Ce):Si of 1:4.0(3) averaged over four measurements, which, within the measurement error, indicates the composition of the phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ confirmed. Figures 3 to 8 show schematic sections of a crystal structure of a host structure 2 of a phosphor 1 according to an embodiment. The phosphor 1 has the molecular formula Li8MC[LiSi4N4O8]:E with MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y and E = Ce 3+ , Eu 2+ and / or Nd 3+ Figure 3 shows a section of the host structure 2 of the phosphor 1 with the molecular formula Li8MC[LiSi4N4O8]:E with MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y and E = Ce 3+ , Eu 2+ and / or Nd 3+approximately along the [1 ^ 00] direction. The section shows a first layer 3 and MC atoms 4. The first layer 3 is composed of corner-sharing SiO2N2 tetrahedra 31 and LiO4 tetrahedra 32. The first layer 3 can also be referred to as a lithosilicate layer. In Figure 4, the first layer 3 is arranged along the [001 ^ ] direction. The unit cell of the crystal structure of the host structure 2 is indicated by black lines. The SiO2N2 tetrahedra 31 form four-membered rings 5, which create channels 6 along the c-axis. The MC atoms 4 are located in the channels 6. In the first layer 3, the LiO4 tetrahedra 32 are corner-sharing on all sides. A coordination sphere of the MC atoms 4 of Li8MC[LiSi4N4O8]:E with MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y and E = Ce 3+ , Eu 2+ and / or Nd 3+is shown in Figures 5 and 6 from different directions. Figure 5 shows the coordination sphere along the [001 ^ ] direction, whereas 2023PF00709 1 July 2024 P2023,0785 WO N - 85 - Figure 6 shows the coordination sphere approximately along the [1 ^00] direction. The MC atom 4 is surrounded in this case by four O atoms 7 and four N atoms 8 in a square antiprismatic manner. The MC atom 4 therefore exhibits eightfold coordination. At opposite corners of the square antiprism 41 around the MC atom 4, an O atom 7 and an N atom 8 are located opposite each other. At the corners of the square faces of the square antiprism 41 along the c-axis, there are only O atoms 7 or only N atoms 8. If the composition of the phosphor is different from Li8MC[LiSi4N4O8]:E, the occupancy of the O atoms and / or N atoms can change. It is also possible that some of the N atoms 8 are located at the positions of the O atoms 7 and vice versa. It is assumed that the activator element E, in this case Ce 3+, according to its charge and ionic radius, can occupy the positions of the MC atoms 4 in the crystal structure of the host structure 2. In Figure 7, a second layer 9 of the host structure 2 of the phosphor 1 with the molecular formula Li8MC[LiSi4N4O8]:E with MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y and E = Ce 3+ , Eu 2+ and / or Nd 3+ The second layer 9 is in the ab-plane, i.e. along the [001 ^] direction. The unit cell of the crystal structure of host structure 2 is indicated by black lines. The second layer 9 is composed of five-coordinate Li. In other words, the coordination number of Li is 5. The second layer 9 comprises trigonal LiO3N2 bipyramids 92 and trigonal LiO4N bipyramids 91. The 2023PF00709 July 1, 2024 P2023,0785 WO N - 86 - trigonal bipyramids 91, 92 can also be described as a square pyramid. Alternatively, the polyhedra around the Li atoms can be described, for example, as distorted tetrahedral with an additional anion located further away. Even in the alternative description of the environment of the Li atom, the coordination number of Li remains 5. The trigonal LiO3N2 bipyramids 92 and the trigonal LiO4N bipyramids 91 are edge-sharing.Furthermore, four trigonal LiO3N2 bipyramids 92 and four trigonal LiO4N bipyramids 91 are arranged such that the channel 6 from the first layer 3 continues in the center, in which the MC atoms 4 are located along the c-axis. The first layer 3 and the second layer 9 are in the crystal structure of the host structure 2 of the phosphor 1 with the molecular formula Li8MC[LiSi4N4O8]:E, where MC = Gd, Dy, Ho, Pr, Nd, Tm, Tb, Er, Lu, Yb, Sm or Y and E = Ce. 3+ , Eu 2+ and / or Nd 3+ arranged alternately. In other words, between each two first layers 3 there is a second layer 9. The first layer 3 and the second layer 9 are linked together via common corners and edges. In this way, a three-dimensional network is formed. The phosphor 1 can also be referred to as lithium oxonitridolithosilicate. A first layer 3 and a second layer 9 along the [001 ^] direction are shown in Figure 8. Figure 9 shows five alternating repeating layers 3, 9 along the [01 ^ 0] direction. In Figures 8 and 9, the unit cell of the crystal structure of host structure 2 is indicated by black lines. 2023PF00709 July 1, 2024 P2023,0785 WO N - 87 - Figure 10 shows a Rietveld-refined powder diffractogram R1 of host structure 2 of phosphor 1 according to the embodiment with the empirical formula Li8Gd[LiSi4N4O8]:Ce 3+The powder diffractogram was recorded using Mo-Kα1 radiation. The relative intensity I in arbitrary units is plotted against the diffraction angle 2θ in degrees. The crosses in the powder diffractogram represent the measured values ​​G1. The white solid line with a black border represents a calculated powder diffractogram G2. Line G3 represents the difference between the values ​​of curve G2 and curve G1. In other words, it is a difference diagram G3. The black markings G4 correspond to the theoretical reflection positions for Li8Gd[LiSi4N4O8] (top), Li4SiO4 (middle), and Gd2O3 (bottom). The theoretical reflection positions for Li8Gd[LiSi4N4O8] were determined using the previously described crystal structure of host structure 2 of the phosphor with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+The results of the Rietveld refinement are summarized in Table 25. The Rietveld refinement shows that the powder sample contains, in addition to the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ also contains Li4SiO4 and Gd2O3, but only in small amounts. Table 25: Results of Rietveld refinement of a powder sample of Li8Gd[LiSi4N4O8] Composition Li8Gd[LiSi4N4O8] / wt% 79.1(4) Li4SiO4 / wt% 17.1(5) Gd2O3 / wt% 3.8(4) Crystallographic data Diffractometer STOE STADI P 2023PF00709 July 1, 2024 P2023.0785 WO N - 88 - Radiation; Wavelength / Å Mo-Kα1; 0.7093 a / Å 9.9876(2) c / Å 5.07508(7) Cell volume / Å 3 506.25(2) 2 θ Range / ° 2 – 40.085 2 θ Step size / ° 0.015 R exp / % 0.94 R wp / % 4.87 R p / % 3.03 R Bragg / % 1.511 Due to the activator element E, the embodiment of the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+Phosphor properties. An excitation spectrum A1 and an emission spectrum E1 of a powder sample of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ are shown in Figure 11. The excitation spectrum A1 is based on the raw data maximum of the emission curve, which is located at approximately 510 nanometers. The emission spectrum E1 was recorded at an excitation wavelength of 430 nanometers. The phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ has an emission maximum λ max at about 517 nanometers. Further optical data of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ are summarized in Table 26. Table 26: Optical data for a powder sample of Li8Gd[LiSi4N4O8]:Ce 3+ . Li8Gd[LiSi4N4O8]:Ce3+ LER / lm W opt. −1 436.2 λ max / nm 517.4 λdom / nm 551.8 λ centroid / nm 544.5 FWHM / nm 112.3 2023PF00709 July 1, 2024 P2023,0785 WO N - 89 - CIE-x 0.322(1) CIE-y 0.548(1) Figure 12 shows emission spectra E1, E1a and V1 of phosphors 1. The emission spectrum E1 for a powder sample of the embodiment of the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ was recorded at an excitation wavelength of 430 nanometers. The emission spectrum E1a for a single crystal of the exemplary embodiment of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ was recorded at an excitation wavelength of 448 nanometers. The emission spectrum V1 of a comparative example of a phosphor 1 with the molecular formula Lu3(Al / Ga)5O 12 :Ce 3+ was recorded at an excitation wavelength of 448 nanometers. The emission spectra show that the emissions from Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+are spectrally comparable. However, phosphor 1 exhibits an improved photometric radiant equivalent (LER). Due to the similar emission of Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ Lu3(Al / Ga)5O 12 :Ce 3+ in conventional optoelectronic components by Li8Gd[LiSi4N4O8]:Ce 3+ Furthermore, it can be seen from Figure 12 that the emission of the single crystal of Li8Gd[LiSi4N4O8]:Ce 3+ representative of the powder sample of Li8Gd[LiSi4N4O8]:Ce 3+ Selected optical data of Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ are summarized in Table 27. Table 27: Comparison of the optical data of Li8Gd[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ . LiGd[LiSiNO]:Ce 3+ 3+ 8 4 4 8 Lu3(Al / Ga)5O12:Ce LER / lm W opt. −1434 (+ 2%) 427 2023PF00709 July 1, 2024 P2023.0785 WO N - 90 - λmax / nm 516.5 523.4 λ dom / nm 552.6 551.4 FWHM / nm 116.2 114.6 CIE-x 0.325(1) 0.320(1) CIE-y 0.547(1) 0.543(1) The temperature behavior of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ is shown in Figure 13. The x-axis represents the temperature T in °C, and the y-axis represents the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C. The maximum temperature is 225 °C. The phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+shows a decrease in emission intensity with increasing temperature. However, at a temperature of approximately 100 °C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is still approximately 85%. Figure 14 shows emission spectra E1 to E3 of phosphors 1 according to various embodiments with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ in a range from 465 nanometers to 765 nanometers inclusive. The phosphors 1 were excited here with a wavelength of 448 nanometers. For the phosphor 1 underlying the emission spectrum E1, MC = Gd. For the phosphor 1 underlying the emission spectrum E2, MC = Dy. For the phosphor 1 underlying the emission spectrum E3, MC = Y. Figure 15A shows emission spectra E4 and E5 of phosphors 1 according to various embodiments with the empirical formula Li8MC[LiSi4N4O8]:Ce 3+in a range from 465 nanometers up to and including 865 nanometers. The phosphors 1 were excited here with a wavelength of 448 nanometers. For the phosphor 1 underlying the emission spectrum E4, MC = Ho. For the phosphor 1 underlying the emission spectrum E5, MC = Pr. Figure 15B shows an emission spectrum E6 of a phosphor 1 according to an embodiment with the empirical formula Li8MC[LiSi4N4O8]:Ce 3+ in a range from 600 nanometers up to and including 1600 nanometers. In this case, phosphor 1 was excited at a wavelength of 450 nanometers. For phosphor 1, which forms the basis of the emission spectrum E6, MC = Nd. The emission spectra E2 to E6 are based on raw products of the respective phosphor 1, possibly with impurities. In the case of MC = Ho, Pr and Nd, the activator element Ce 3+act as a sensitizer. This results in the additional emission peaks in emission spectra E4 to E6 of Figures 15A and 15B compared to emission spectra E1 to E3 of Figure 14. The additional emission peaks are caused by f→f transitions of MC. The phosphors 1 with MC = Ho and Pr exhibit emission in the green to yellow region of the electromagnetic spectrum as well as in the orange to red region of the electromagnetic spectrum. The phosphor with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ shows almost no emission in the green to yellow range of the electromagnetic spectrum 2023PF00709 1 July 2024 P2023,0785 WO N - 92 - anymore. For Li8Nd[LiSi4N4O8]:Ce 3+Emission is mainly observed in the infrared range of the electromagnetic spectrum. Figure 16 schematically shows various steps of a process for producing a phosphor 1. In a first process step S1, reactants are provided. The reactants include, for example, for the synthesis of the phosphor 1 with the empirical formula Li8Gd[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd, Gd2O3, GdF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Dy, Dy2O3, DyF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Ho, Ho2O3, HoF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Pr, Pr2O3, Pr6O 11 , PrF3, Ce, CeO2, CeF3 and / or CeN. The reactants for the synthesis of the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce3+ include, for example, Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Nd, Nd2O3, NdF3, Ce, CeO2, CeF3 and / or CeN. The reactants for the synthesis of the phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Y, Y2O3, YF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Gd2O3, GdF3, Ce, CeO2, CeF3, CeN, NdF3 and / or Nd2O3. The reactants include, for example, for the synthesis of the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Tm, Tm2O3, TmF3, Ce, CeO2, CeF3 and / or CeN. The reactants for the synthesis of phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce include, for example, 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Tb, Tb2O3, TbF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Er, Er2O3, ErF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Lu, Lu2O3, LuN, LuF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Yb, Yb2O3, YbF3, Ce, CeO2, CeF3 and / or CeN. The reactants include, for example, for the synthesis of phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Sm, Sm2O3, SmF3, Ce, CeO2, CeF3, and / or CeN. The starting materials for the synthesis of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Eu include, for example, 2+Si, Si3N4, Li2SiN2, SiO2, Li2O, Li3N, LiN3, LiF, Y, Y2O3, YF3, EuF2. The reactants are blended in a second process step S2 to form a reactant mixture. In addition to the reactants, the reactant mixture may also contain a flux, for example, up to 5 wt.% based on the weight of the reactants used. The reactant mixture is transferred to a W crucible, Ni crucible, or Ta tube. In a third process step S3, the reactant mixture is heated in a flow tube furnace, a high-frequency furnace, or in a tube furnace. Heating takes place to a first temperature of at least 920 °C. This temperature is maintained for a time in the range between 4 hours and 20 hours inclusive. Subsequently, cooling takes place at a cooling rate of no more than 6 °C / h to a second temperature of less than 600 °C.Subsequently, cooling is carried out at a rate of less than 20 °C / h to a third temperature of less than 200 °C. The furnace is then switched off. Production of Li8Gd[LiSi4N4O8]:Ce3+. The phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce3+ is prepared from the reactants Si3N4, SiO2, Li2O, and Gd2O3 in a molar ratio of 2:2:10.5:1, possibly with a flux such as LiF or Li at up to 5 wt.%, and with CeF3 as the reactant for the activator element Ce. 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Gd. The exact weights for the preparation of Li8Gd[LiSi4N4O8]:Ce 3+are summarized in Table 28. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 2023PF00709 July 1, 2024 P2023,0785 WO N - 95 - 18 °C / h, and the furnace is then switched off. Table 28: Sample weights for the synthesis of Li8Gd[LiSi4N4O8]:Ce 3+. Educt Amount Si3N425.89 mg (0.185 mmol) SiO211.09 mg (0.185 mmol) Li2O 28.95 mg (0.969 mmol) Gd2O333.44 mg (0.092 mmol) CeF30.64 mg (0.003 mmol) Preparation of Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ is prepared from the reactants Si3N4, SiO2, Li2O and Gd2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF 3+ 3 and NdF3 as reactants for the activator elements Ce and Nd 3+ The exact weights for the preparation of Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ are summarized in Table 29. The synthesis was carried out as for Li8Gd[LiSi4N4O8]:Ce 3+ described. Table 29: Sample weights for the synthesis of Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+Educt Amount Si3N4 25.96 mg (0.185 mmol) SiO2 11.12 mg (0.185 mmol) Li2O 29.04 mg (0.972 mmol) Gd2O3 30.19 mg (0.083 mmol) CeF3 1.82 mg (0.009 mmol) NdF3 1.86 mg (0.009 mmol) 2023PF00709 July 1, 2024 P2023,0785 WO N - 96 - Preparation of Li8Dy[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce3+ is prepared from the educts Si3N4, SiO2, Li2O and DyF3 in the molar ratio 2:2:10.5:1, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as starting material for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Dy. The exact weights for the preparation of Li8Dy[LiSi4N4O8]:Ce 3+are summarized in Table 30. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After filling the Ta tube with the reactants, it is sealed with an arc welded in an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. Table 30: Sample weights for the synthesis of Li8Dy[LiSi4N4O8]:Ce 3+. Educt Amount Si3N429.79 mg (0.212 mmol) SiO212.76 mg (0.212 mmol) Li2O 33.31 mg (1.115 mmol) DyF323.30 mg (0.106 mmol) 2023PF00709 1 July 2024 P2023,0785 WO N - 97 - CeF30.84 mg (0.004 mmol) Preparation of LiHo[Li 3+ 8 Si4N4O8]:Ce The phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce3+ is prepared from the educts Si3N4, SiO2, Li2O and HoF3 in a molar ratio of 2:2:10.5:1, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as Educt for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol% with respect to Ho. The exact weights for the preparation of Li8Ho[LiSi4N4O8]:Ce 3+are summarized in Table 31. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After filling the Ta tube with the reactants, it is sealed with an arc welded in an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h or approximately 1 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. Table 31: Sample weights for the synthesis of Li8Ho[LiSi4N4O8]:Ce 3+. Educt Amount Si3N429.71 mg (0.212 mmol) SiO212.73 mg (0.212 mmol) 2023PF00709 1 July 2024 P2023,0785 WO N - 98 - Li2O 33.23 mg (1.112 mmol) HoF323.50 mg (0.106 mmol) CeF30.83 mg (0.004 mmol) Preparation of LiPr 3+ 8 [LiSi4N4O8]:Ce The phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce3+ is prepared from the educts Si3N4, SiO2, Li2O and Pr6O 11 in a molar ratio of 2:2:10.5:0.3, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as starting material for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Pr. The exact weights for the preparation of Li8Pr[LiSi4N4O8]:Ce 3+are summarized in Table 32. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After filling the Ta tube with the reactants, it is sealed with an arc welded in an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h or approximately 1 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. Table 32: Sample weights for the synthesis of Li8Pr[LiSi4N4O8]:Ce 3+ . Educt Quantity 2023PF00709 1 July 2024 P2023,0785 WO N - 99 - SiO211.33 mg (0.189 mmol) Li2O 29.59 mg (0.990 mmol) Pr6O 1128.90 mg (0.028 mmol) CeF33.72 mg (0.019 mmol) Preparation of Li8Nd[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce3+ is prepared from the reactants Si3N4, SiO2, Li2O and Nd2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as reactant for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Nd. The exact weights for the preparation of Li8Nd[LiSi4N4O8]:Ce 3+are summarized in Table 33. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After filling the Ta tube with the reactants, it is sealed with an arc welded in an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. Table 33: Sample weights for the synthesis of Li8Nd[LiSi4N4O8]:Ce 3+. 2023PF00709 1 July 2024 P2023,0785 WO N - 100 - Educt Amount Si3N4 26.55 mg (0.189 mmol) SiO2 11.37 mg (0.189 mmol) Li2O 29.69 mg (0.994 mmol) Nd2O3 28.66 mg (0.085 mmol) CeF 33.73 mg (0.019 mmol) Preparation of Li8Y[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce3+ is prepared from the educts Si3N4, SiO2, Li2O and Y2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3as starting material for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Y. The exact weights for the preparation of Li8Y[LiSi4N4O8]:Ce 3+are summarized in Table 34. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. 2023PF00709 1 July 2024 P2023,0785 WO N - 101 - Table 34: Sample weights for the synthesis of Li8Y[LiSi4N4O8]:Ce 3+ . Educt amount Si3N427.78 mg (0.198 SiO2 11.90 mg (0.198 mmol) Li2O 35.50 mg (1.188 mmol) Y2O3 20.92 mg (0.089 mmol) CeF 33.9 mg (0.020 mmol) Preparation of Li8Tm[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce3+ is prepared from the reactants Si3N4, SiO2, Li2O and Tm2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as reactant for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 10 mol%, with respect to Tm. The exact weights for the preparation of Li8Tm[LiSi4N4O8]:Ce 3+are summarized in Table 35. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 2023PF00709 July 1, 2024 P2023,0785 WO N - 102 - 18 °C / h, and the furnace is then switched off. Table 35: Sample weights for the synthesis of Li8Tm[LiSi4N4O8]:Ce 3+Educt Amount Si3N4 25.48 mg (0.182 mmol) SiO2 10.91 mg (0.182 mmol) Li2O 28.49 mg (0.954 mmol) Tm2O3 31.54 mg (0.082 mmol) CeF3 3.58 mg (0.018 mmol) Preparation of Li8Tb[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li 3+ 8Tb[LiSi4N4O8]:Ce is prepared from the reactants Si3N4, SiO2, Li2O and Tb2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as reactant for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 10 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Tb. The exact weights for the production of Li8Tb[LiSi4N4O8]:Ce 3+are summarized in Table 36. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. Cooling then occurs at a rate of approximately 2 °C / h to a second temperature of approximately 500 °C. In a second cooling step, cooling occurs at a rate of approximately 18 °C / h to a third temperature of approximately 150 °C, and the furnace is then switched off.Table 36: Initial weights for the synthesis of Li8Tb[LiSi4N4O8]:Ce3+ Educt Amount Si3N425.90 mg (0.185 mmol) SiO211.09 mg (0.185 mmol) Li2O 28.97 mg (0.969 mmol) Tb2O330.40 mg (0.083 mmol) CeF33.64 mg (0.018 mmol) Preparation of Li8Er[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce. 3+ is prepared from the reactants Si3N4, SiO2, Li2O and Er2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as reactant for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Er. The exact weights for the production of Li8Er[LiSi4N4O8]:Ce 3+are summarized in Table 37. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off.Table 37: Sample weights for the synthesis of Li8Er[LiSi4N4O8]:Ce3+ Educt Amount Si3N4 25.55 mg (0.182 mmol) SiO2 10.94 mg (0.182 mmol) Li2O 28.57 mg (0.956 mmol) Er2O3 31.35 mg (0.082 mmol) CeF3 3.59 mg (0.019 mmol) Preparation of Li3+ 8Lu[LiSi4N4O8]:Ce The phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce3+ is prepared from the reactants Si3N4, SiO2, Li2O and Lu2O3 in a molar ratio of 2.15:1.55:10.5:0.8, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as a reactant for the activator element Ce. 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Lu. The exact weights for the preparation of Li8Lu[LiSi4N4O8]:Ce 3+are summarized in Table 38. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc welded under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, 2023PF00709 July 1, 2024 P2023,0785 WO N - 105 - , which temperature is maintained for approximately 12 hours. Cooling then occurs at a rate of approximately 1 °C / h to a second temperature of approximately 500 °C. In a second cooling step, cooling occurs at a rate of approximately 18 °C / h to a third temperature of approximately 150 °C, and the furnace is then switched off. Table 38: Sample weights for the synthesis of Li8Lu[LiSi4N4O8]:Ce 3+. Educt Amount Si3N4 28.29 mg (0.202 mmol) SiO 28.73 mg (0.145 mmol) Li2O 29.43 mg (0.985 mmol) Lu2O3 29.86 mg (0.075 mmol) CeF 33.7 mg (0.019 mmol) Preparation of Li8Yb[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce3+ is prepared from the educts Si3N4, SiO2, Li2O and Yb2O3 in a molar ratio of 2:2:10.5:0.9, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as educt for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Yb. The exact weights for the preparation of Li8Yb[LiSi4N4O8]:Ce 3+are summarized in Table 39. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc under an Ar atmosphere. The synthesis of the material 2023PF00709 July 1, 2024 P2023,0785 WO N - 106 - takes place at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. Subsequently, cooling is carried out at a rate of approximately 2 °C / h to a second temperature of approximately 500 °C. In a second cooling step, cooling is carried out at a rate of approximately 18 °C / h to a third temperature of approximately 150 °C, and the furnace is then switched off. Table 39: Sample weights for the synthesis of Li8Yb[LiSi4N4O8]:Ce 3+ Educt amount Si3N425.30 mg SiO2 10.84 mg (0.180 mmol) Li2O 28.30 mg (0.947 mmol) Yb2O3 31.99 mg (0.081 mmol) CeF3 3.56 mg (0.018 mmol) Preparation of Li8Sm[LiSi4N4O8]:Ce3+ The phosphor 1 with the molecular formula Li 3+ 8Sm[LiSi4N4O8]:Ce is prepared from the reactants Si3N4, SiO2, Li2O and Sm2O3 in a molar ratio of 2:2:10.5:0.85, possibly a flux such as LiF or Li with up to 5 wt.% and with CeF3 as reactant for the activator element Ce 3+ manufactured. The activator element Ce 3+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 5 mol%, with respect to Sm. The exact weights for the preparation of Li8Sm[LiSi4N4O8]:Ce 3+are summarized in Table 40. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After being filled with the reactants, the Ta tube is then sealed with an arc under an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. Cooling then occurs at a rate of approximately 1 °C / h to a second temperature of approximately 500 °C. In a second cooling step, cooling occurs at a rate of approximately 18 °C / h to a third temperature of approximately 150 °C, and the furnace is then switched off. Table 40: Sample weights for the synthesis of Li8Sm[LiSi4N4O8]:Ce3+ Educt Amount Si3N426.22 mg (0.187 SiO2 11.23 mg (0.187 mmol) Li2O 29.32 mg (0.981 mmol) Sm2O3 27.70 mg (0.079 mmol) CeF3 5.53 mg (0.028 mmol) A first embodiment of an optoelectronic component 10 is shown in Figure 17. The optoelectronic component 10 comprises a radiation-emitting semiconductor chip 11 with an epitaxially grown semiconductor layer sequence having an active region 111. The active region 111 is designed to generate electromagnetic radiation in a first wavelength range. The radiation-emitting semiconductor chip 11 emits the electromagnetic radiation in the first wavelength range through a radiation exit surface. For example, the radiation exit surface is parallel to a main extension plane of the radiation-emitting semiconductor chip 11. In the present case, the radiation-emitting semiconductor chip 11 emits electromagnetic 2023PF00709 1.July 2024 P2023,0785 WO N - 108 - Radiation from the blue wavelength range of the electromagnetic spectrum. For example, the radiation-emitting semiconductor chip emits electromagnetic radiation with a dominant wavelength λ. dom of approximately 455 nanometers or approximately 445 nanometers. The radiation-emitting semiconductor chip 11 is, for example, a micro-LED. The optoelectronic component 10 further comprises a conversion element 12. The conversion element 12 is in direct mechanical contact with the radiation-emitting semiconductor chip 11. The conversion element 12 comprises a phosphor 1 with the empirical formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, in particular the phosphor 1 with the molecular formula Li8MC[LiSi4N4O8]:E with MC = Gd, Y, Pr, Nd, Ho, Tm, Tb, Er, Lu, Yb, Sm or Dy. The phosphor 1 converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, which is at least partially different from the first wavelength range. The conversion element 12 and the radiation-emitting semiconductor chip 11 are arranged in a housing 13. The housing 13 has, for example, reflective surfaces. The conversion element 12 in the present case further comprises a matrix material 121 in which particles of the phosphor 1 are embedded. The conversion element 12 is formed as a layer with a uniform thickness. The matrix material 121 is an inorganic or an organic matrix material. The conversion element can be designed as a plate 2023PF00709 July 1, 2024 P2023,0785 WO N - 109 -.The conversion element 12 can also be formed as a ceramic and be largely free of a matrix material 121. In particular, the matrix material 121 consists of a material selected from the group formed by glass, such as silicate glass, water glass or quartz glass, and polymers, such as polystyrene, polysilazane, polymethyl methacrylate, polycarbonate, polyacrylate, polytetrafluoroethylene, polyvinyl, silicone resin, silicone, polysiloxane, epoxy resin, and combinations thereof. The silicone and / or the polysiloxane can be fluorinated. The conversion element 12 can be configured for full conversion or partial conversion. Furthermore, the conversion element 12 can have a further phosphor 14 and / or scattering particles (not shown). The further phosphor 14 and the scattering particles are, for example, homogeneously mixed with the phosphor 1. The optoelectronic component 10 is suitable, for example, as a light source.In the case of partial conversion, the optoelectronic component 10 emits mixed light from the electromagnetic radiation of the first wavelength range and the second wavelength range. In the case of full conversion, the optoelectronic component 10 emits only the electromagnetic radiation of the second wavelength range. Compared to the first exemplary embodiment of the optoelectronic component 10, the second exemplary embodiment of the optoelectronic component 10 of Figure 18 has an intermediate layer 15 between the radiation-emitting semiconductor chip 11 and the conversion element 12. Otherwise, the 2023PF00709 July 1, 2024 P2023,0785 WO N - 110 - optoelectronic component 10 of the first exemplary embodiment and the second exemplary embodiment have the same structure. The intermediate layer 15 is designed, for example, as a carrier for the conversion element 12 and / or as an adhesive layer.The carrier serves to mechanically stabilize a conversion layer 12 with an organic matrix material. This is advantageous, for example, during the production of the conversion element 12. The carrier is made of a transparent material. The adhesive layer comprises, for example, a silicone resin and / or an epoxy resin. Figure 19 shows a third exemplary embodiment of an optoelectronic component 10. The radiation-emitting semiconductor chip 11 and the housing 13 are identical to the corresponding elements of the optoelectronic component 10 of the first exemplary embodiment. In comparison to the first exemplary embodiment, however, the conversion element 12 is not formed as a layer with a uniform thickness, but rather as a converting encapsulation 16. The conversion element 12 comprises the phosphor 1 and optionally a further phosphor 14 and / or scattering particles (not shown).The conversion element 12 surrounds the radiation-emitting semiconductor chip 11 in a form-fitting manner on at least two sides. The conversion element 12 further comprises a matrix material 121, which comprises, for example, a polysiloxane or an epoxy resin. Figure 20 shows a fourth exemplary embodiment of an optoelectronic component 10. Compared to the optoelectronic component 10 of the first exemplary embodiment, the conversion element is arranged at a distance from the radiation-emitting semiconductor chip 11. However, the conversion element 12 and the radiation-emitting semiconductor chip 11 are configured identically to the corresponding elements of the first exemplary embodiment. A non-converting encapsulation 17 is arranged between the conversion element 12 and the radiation-emitting semiconductor chip 11. The conversion element 12 is flush with the housing 13.The non-converting encapsulation 17 at least partially surrounds the radiation-emitting semiconductor chip 11 in a form-fitting manner. The radiation-emitting semiconductor chip 11 is in direct mechanical contact with the non-converting encapsulation 17. The non-converting encapsulation 17 has a transmittance of at least 90% for the electromagnetic radiation of the first wavelength range. Figure 21 shows a fifth exemplary embodiment of an optoelectronic component 10. The present optoelectronic component 10 is constructed identically to the optoelectronic component 10 of the first exemplary embodiment. However, the conversion element 12 has a further phosphor 14 arranged in a separate layer. In other words, the phosphor 1 and the further phosphor 14 are not mixed with one another. The further phosphor 14 can likewise have the empirical formula Li. 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b MEz MG b N 4- z+b-c O 8+z-b+c]:E, in particular the molecular formula Li8MC[LiSi4N4O8]:E. However, the phosphor 1 and the further phosphor 14 differ in their composition. Alternatively, it is possible for the further phosphor 14 to obey a different molecular formula. The further phosphor 14 is embedded in the same matrix material 121 as the phosphor 1. However, it is also possible for the further phosphor 14 to be embedded in a different matrix material 121. The further phosphor 14 can also comprise a mixture of various further phosphors. The layer with the further phosphor 14 is presently arranged above the layer with the phosphor 1. In other words, the layer with the phosphor 1 is arranged between the radiation-emitting semiconductor chip 11 and the layer with the further phosphor 14. However, the two layers can also be arranged in reverse.This means that the layer with the phosphor 1 can also be arranged above the layer with the further phosphor 14. The further phosphor 14 converts the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The third wavelength range is at least partially different from the first wavelength range and the second wavelength range. The optoelectronic component 10 therefore emits a mixed light comprising the electromagnetic radiation of the first wavelength range, the second wavelength range, and the third wavelength range. The optoelectronic component 10 according to a sixth exemplary embodiment, which is shown in Figure 22, is constructed identically to the optoelectronic component 10 of the fourth exemplary embodiment. However, in the present case, the optoelectronic component 10 has a converting 2023PF00709 1 instead of the non-converting encapsulation 17.July 2024 P2023,0785 WO N - 113 - encapsulation 16. The converting encapsulation 16 here comprises a further phosphor 14 and a matrix material 121. The converting encapsulation 16 forms part of the conversion element 12. The arrangement of the phosphor 1 and the further phosphor 14 in the converting encapsulation 16 and in the layer above it can also be interchanged. The matrix materials 121 of the converting encapsulation 16 and the layer above it can be the same or different. The conversion elements 12 of the fifth and sixth exemplary embodiments of the optoelectronic component 10 of Figures 21 and 22 can be configured for full conversion or partial conversion. Thus, the optoelectronic component 10 of the fifth and sixth embodiments can emit electromagnetic radiation of the first to third wavelength ranges or electromagnetic radiation of the second and third wavelength ranges.Figures 23 to 25 show simulated emission spectra LED-A1, LED-A2, LED-A3, LED-V1, LED-V2, and LED-V3 of optoelectronic components 10 according to various exemplary embodiments and comparative examples. Figure 23 shows the simulated emission spectra LED-A1 and LED-V1. Figure 24 shows the emission spectra LED-A2 and LED-V2, and Figure 25 shows the emission spectra LED-A3 and LED-V3. The underlying optoelectronic components 10 each comprise a radiation-emitting semiconductor chip 11 and a conversion element 12. The conversion element 12 of the embodiments with the simulated 2023PF00709 July 1, 2024 P2023,0785 WO N - 114 - emission spectra LED-A1, LED-A2 and LED-A3 has the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce. 3+ and at least one further phosphor 14 with the molecular formula (Sr,Ca)AlSiN3:Eu 2+(SCASN1 to SCASN3). The conversion element 12 of the comparative examples with the simulated emission spectra LED-V1, LED-V2, and LED-V3 has a phosphor LuAGaG with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ with a Ga content of 25% based on the sum of Al and Ga and with a Ce content of about 2% based on Lu and at least one further phosphor 14 with the molecular formula (Sr,Ca)AlSiN3:Eu 2+ (SCASN1 to SCASN3). The at least one further phosphor 14 with the molecular formula (Sr,Ca)AlSiN3:Eu 2+emits in the orange or red wavelength range of the electromagnetic spectrum. The radiation-emitting semiconductor chip 11 emits blue light. Furthermore, the ratios of phosphors 1 and 14 are adjusted to achieve a specific color coordinate and color rendering index (CRI). The simulation results are summarized in Table 41. Table 41: Data on white light LED simulations. LED-A1 LED-V1 LED-A2 LED-V2 LED-A3 LED-V3 blue LED (λ / nm) 455 455 445 445 455 455 green light LiGd[LiSi LiGd[LiSi LiGd[LiSi material NO]:Ce LuAGaG NO]:Ce LuAGaG NO]:Ce LuAGaG orange light material - - SCASN1 SCASN1 - - Red Fluorescent SCASN3 SCASN3 SCASN2 SCASN2 SCASN3 SCASN3 CIE x 0.437 0.437 0.437 0.437 0.313 0.314 CIE y 0.404 0.404 0.404 0.404 0.324 0.324 2023PF00709 1.July 2024 P2023,0785 WO N - 115 - CCT / K 3000 3000 3000 3000 6504 6496 CRI 90 91 81 81 90 91 R9 36 41 -3 -3 41 46 LER / lm / W 316 313 335 334 298 295 The results of the simulations show that with the phosphor 1 of the molecular formula Li8Gd[LiSi4N4O8]:Ce. 3+ In all three exemplary embodiments, the same color coordinates and color temperatures are achieved as in the comparative examples. Furthermore, the same or very similar color rendering values ​​are achieved. The phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+is therefore very well suited for achieving optoelectronic components 10 with high color rendering at different color temperatures, at different target CRI values, and at different emission wavelengths of the radiation-emitting semiconductor chip 12. Surprisingly, the LER values ​​of the exemplary embodiments are also higher than those of the comparative examples. The phosphor with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ thus shows improved spectral efficiency in application. With the phosphor of the molecular formula Li8Dy[LiSi4N4O8]:Ce3+, almost identical results are obtained as shown in Table 41. Figure 26 shows a Rietveld-refined powder diffractogram R2 of host structure 2 of phosphor 1 according to the embodiment with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+The powder diffractogram was recorded using Mo-Kα1 radiation. The relative intensity I in arbitrary units is plotted against the diffraction angle 2θ in degrees. The crosses in the powder diffractogram represent the measured values ​​G1. The white solid line with a black border represents a calculated 2023PF00709 July 1, 2024 P2023,0785 WO N - 116 - powder diffractogram G2. Line G3 represents the difference between the values ​​of curve G2 and curve G1. In other words, it is a difference diagram G3. The black markings G4 correspond to the theoretical reflection positions for Li8Dy[LiSi4N4O8] (top), Li4SiO4 (middle), and Dy2O3 (bottom). The theoretical reflection positions for Li8Dy[LiSi4N4O8] were determined using the previously described crystal structure of host structure 2 of the phosphor with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+calculated. Table 42: Results of Rietveld refinement of a powder sample of Li8Dy[LiSi4N4O8] Composition Li8Dy[LiSi4N4O8] / wt% 87(2) Li4SiO4 / wt% 12(2) Dy2O3 / wt% 0.58(7) Crystallographic data Diffractometer STOE STADI P Radiation; Wavelength / Å Mo-Kα1; 0.7093 a / Å 9.9831(3) 5.0461(2) c / Å Cell volume / Å 3 502.91(3) 2 θ Range / ° 2 – 40.085 2 θ Step size / ° 0.015 R exp / % 1.01 R wp / % 10.36 R p / % 6.72 R Bragg / % 3.492 The Rietveld analysis shows that the investigated single crystal of Li8Dy[LiSi4N4O8]:Ce 3+ with the crystal structure shown in Figures 3 to 9 is representative of the main phase of the powder sample of Li8Dy[LiSi4N4O8]:Ce3+ 2023PF00709 July 1, 2024 P2023,0785 WO N - 117 -. However, the powder sample also shows that minor phases are present. Due to the activator element E, the embodiment of the phosphor 1 with the empirical formula Li8Dy[LiSi4N4O8]:Ce3+ Phosphor properties. An excitation spectrum A2 and an emission spectrum E2a of a powder sample of phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ are shown in Figure 27. The excitation spectrum A2 is based on the raw data maximum of the emission curve, which is located at approximately 510 nanometers. The emission spectrum E2a was recorded at an excitation wavelength of 435 nanometers. The phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ has an emission maximum λ max at about 529 nanometers. Further optical data of phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ are summarized in Table 43. Table 43: Optical data for a powder sample of Li8Dy[LiSi4N4O8]:Ce 3+ . Li8Dy[LiSi4N4O8]:Ce3+ W opt. −1 453.7 529.1 556.5 / nm 548.1 nm 115.4 CIE-x 0.344(1) CIE-y 0.554(1) Figure 28 shows emission spectra E2b and V1 of phosphors 1. The emission spectrum E2b for a single crystal of the embodiment of phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ was recorded at an excitation wavelength of 448 nanometers. The emission spectrum V1 of a single grain of the comparative example of a phosphor 1 with the molecular formula Lu3(Al / Ga)5O 12 :Ce 3+ was recorded at an excitation wavelength of 448 nanometers. The emission spectra show that the emissions from Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ are spectrally comparable. However, phosphor 1 exhibits a slightly improved photometric radiant equivalent (LER). Due to the similar emission of Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ Lu3(Al / Ga)5O12 :Ce 3+ in conventional optoelectronic components by Li8Dy[LiSi4N4O8]:Ce 3+ Selected optical data of Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ are summarized in Table 44. Table 44: Comparison of the optical data of Li8Dy[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ . LiDy[LiSiNO]:Ce 3+ Lu(Al / Ga)O :Ce3+ 8 4 4 8 3 5 12 432 (+ 1%) 427 513.8 523.4 551.7 551.4 542.9 543.7 114.8 114.6 CIE-x 0.321(1) 0.320(1) CIE-y 0.546(1) 0.543(1) The temperature behavior of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+is shown in Figure 29. The x-axis represents the temperature T in °C, and the y-axis represents the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C. The maximum temperature is 225 °C. The phosphor 1 with the molecular formula Li8Dy[LiSi4N4O8]:Ce 3+ shows a decrease in emission intensity with increasing temperature. However, at a temperature of approximately 100 °C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is still above 75%. Figure 30 shows a measured powder diffractogram P1 and a calculated powder diffractogram P2 of an embodiment of a phosphor 1 with the empirical formula Li8Ho[LiSi4N4O8]:Ce 3+ The calculated powder diffractogram P2 was calculated using the structural model of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+Based on the agreement between the measured powder diffractogram P1 and the calculated powder diffractogram P2, it can be confirmed that Li8Ho[LiSi4N4O8]:Ce 3+ isotypic to Li8Gd[LiSi4N4O8]:Ce3+. In Li8Ho[LiSi4N4O8]:Ce 3+ are the lattice sites of Gd in Li8Gd[LiSi4N4O8]:Ce 3+ occupied by Ho. Figure 30 also shows that in the powder sample of phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ a small amount of a secondary phase is present. The reflections associated with the secondary phase are marked with a cross. This secondary phase is Ho2O3. Furthermore, the composition of phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+by SEM-EDX analysis. The SEM-EDX analysis was performed at an acceleration voltage of 25 kV. Averaged over two measurements, the ratio (Ho+Ce):Si was 1:4.2(1), which, within the measurement error, confirms the composition of phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce3+. 2023PF00709 July 1, 2024 P2023,0785 WO N - 120 - Due to the presence of Ce 3+ as activator element E has Li8Ho[LiSi4N4O8]:Ce 3+ Phosphor properties. Figure 31 shows an emission spectrum E4a of the phosphor 1 according to the embodiment with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ The emission spectrum E4a was recorded at an excitation wavelength of approximately 448 nanometers. It is shown in a wavelength range from 466 nanometers to approximately 800 nanometers. In comparison to the phosphors 1 with the molecular formulas Li8Gd[LiSi4N4O8]:Ce3+ and Li8Dy[LiSi4N4O8]:Ce 3+In addition to a broad emission band, which is located around the activator element Ce 3+ and can be traced back to its 5d→4f transition, for Li8Ho[LiSi4N4O8]:Ce 3+ also a line emission of the optically active Ho 3+ The line emission can be attributed to 4f→4f transitions in the Ho 3+ The dominant emission wavelength of phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ is approximately 557 nanometers. Further selected optical data of Li8Ho[LiSi4N4O8]:Ce 3+ are summarized in the following Table 45. Table 45: Optical data of Li8Ho[LiSi4N4O8]:Ce 3+ . LiHo[LiSiNO]:Ce3+ 8 4 4 8 395 556.8 562.0 CIE-x 0.345(1) CIE-y 0.537(1) Figures 32 to 36 show simulated emission spectra of LED-A4, LED-A5, LED-V4, LED-V5, LED-V6, and LED-V7 of optoelectronic components 10 according to various exemplary embodiments and comparative examples. Figure 32 shows the simulated emission spectra of LED-A4 and LED-A5 2023PF00709 July 1, 2024 P2023,0785 WO N - 121 -. Figure 33 shows the simulated emission spectra LED-A4 and LED-V4, Figure 34 shows the simulated emission spectra LED-A4 and LED-V5, Figure 35 shows the simulated emission spectra LED-A4 and LED-V6, and Figure 36 shows the simulated emission spectra LED-A4 and LED-V7. The underlying optoelectronic components 10 each comprise a radiation-emitting semiconductor chip 11 and a conversion element 12.The conversion element 12 of the embodiments with the simulated emission spectra LED-A4 and LED-A5 each has a phosphor 1 with the molecular formula Li8MC[LiSi4N4O8]:Ce. 3+ with MC = Ho or Gd. The conversion element 12 of the comparative examples with the simulated emission spectra LED-V4, LED-V5, LED-V6 and LED-V7 has a phosphor LuAG with the molecular formula Lu3Al5O 12 :Ce 3+ or a phosphor LuAGaG with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ with a Ga content of 25% based on the sum of Al and Ga and with a Ce content of approximately 2% based on Lu. Furthermore, the conversion elements 12 of the comparative examples with the simulated emission spectra LED-V5, LED-V6, and LED-V7 additionally contain a red phosphor such as (Sr,Ca)AlSiN3:Eu2+ ((S)CASN), SrLiAl3N4:Eu 2+ (SLA) or K2SiF6:Mn 4+(KSF) as an additional phosphor 14. The radiation-emitting semiconductor chip 11 emits blue light. Furthermore, the ratios of the phosphors 1 and 14 are adjusted to achieve a specific color location. The results of the simulations and the composition of the optoelectronic components 10 are summarized in Table 46. 2023PF00709 July 1, 2024 P2023,0785 WO N - 122 - Table 46: Data on white light LED simulations. Example LED-A4 LED-A5 LED-V4 LED-V5 LED-V6 LED-V7 blue LED (λ / nm) 447 447 447 446 446 446 green luminescent LiHo[LiSi LiGd[LiSi stoff NO]:Ce NO]:Ce LuAGaG LuAG LuAG LuAG red phosphor - - - (S)CASN SLA KSF CIE x 0.247 0.239 0.237 0.249 0.251 0.249 CIE y 0.261 0.268 0.270 0.259 0.258 0.262 CRI 72 68.5 67.9 70.2 71.6 65.5 CRI comparison in % 100 95 (-5%) 94 (-6%) 98 (-2%) 99 (-1%) 91 (-9%) The simulation results show that with the phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+comparable color coordinates (CIE x and CIE y) and color temperatures can be achieved as with another phosphor system, while simultaneously observing an increased color rendering index (CRI). The phosphor 1 with the molecular formula Li8Ho[LiSi4N4O8]:Ce 3+ is therefore suitable for providing white-light LEDs with a CRI of at least 70, whereby only the use of a single phosphor is necessary. Surprisingly, a CRI advantage was also observed compared to optoelectronic components 10 with two different phosphors in the conversion element 12. The CRI advantage can be attributed to the f→f transitions and the resulting line emission in the red spectral range. Figure 37A shows a secondary electron image of crystals of the exemplary embodiment of phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ as a result of a SEM examination at 15 kV accelerating voltage. Li8Pr[LiSi4N4O8]:Ce3+ is present in the form of isolated, cuboid-shaped crystals. Figures 37B and 37C also each show a secondary electron image of crystals of the exemplary embodiment of phosphor 1 with the empirical formula Li8Pr[LiSi4N4O8]:Ce 3+ as a result of an SEM examination. However, these images were taken at an accelerating voltage of 3 kV. A measured powder diffractogram P3 and a calculated powder diffractogram P4 of a phosphor 1 are shown in Figure 38. The measured powder diffractogram P3 corresponds to the phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ The calculated powder diffractogram P4 was based on the structural model of Li8Nd[LiSi4N4O8]:Ce 3+ The agreement of the powder diffractograms P3 and P4 shows that the phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+isotypic to Li8Nd[LiSi4N4O8]:Ce3+. In Li8Pr[LiSi4N4O8]:Ce 3+ are compared to Li8Nd[LiSi4N4O8]:Ce 3+ The lattice sites of Nd are occupied by Pr. The powder diffractogram P3 further shows the presence of a secondary phase. Reflections attributable to the secondary phase are marked with a cross. The composition of phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+could be further confirmed by SEM-EDX analyses. The SEM-EDX analysis was carried out at an acceleration voltage of 15 kV. Averaged over two measurements, a Pr:Si ratio of 1:4.1(1) was obtained, which, within the measurement error, confirms the composition of phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce3+. A further SEM-EDX analysis at an acceleration voltage of 25 kV resulted in an average (Pr+Ce):Si ratio of 1:4.0(1) which, within the measurement error, confirms the composition of phosphor 1 with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ confirmed. By installing Ce 3+ as an activator element Li8Pr[LiSi4N4O8]:Ce 3+ a compound with phosphor properties. Figure 39A shows an emission spectrum E5a of a single grain of the phosphor 1 according to the embodiment with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+. Figure 39B shows the emission spectrum E5a and an emission spectrum E5b of a single crystal of the phosphor 1 according to the embodiment with the molecular formula Li8Pr[LiSi4N4O8]:Ce 3+ The emission spectra E5a and E5b were recorded at an excitation wavelength of 448 nanometers. In addition to the broadband emission attributable to the activator element Ce 3+ and can be explained by a 5d→4f transition, Li8Pr[LiSi4N4O8]:Ce 3+ also a line emission of the optically active Pr 3+ The line emission can be explained by a 4f→4f transition in the Pr 3+ explain. A dominant wavelength λ dom of the total emission of Li8Pr[LiSi4N4O8]:Ce 3+ is approximately 550 nanometers and approximately 545 nanometers, respectively. Further optical data of Li8Pr[LiSi4N4O8]:Ce 3+ are summarized in Table 47. Table 47: Optical data of Li8Pr[LiSi4N4O8]:Ce 3+. LiPr[L 3+ 3+ 8 iSi4N4O8]:Ce Li8Pr[LiSi4N4O8]:Ce (single grain) (single crystal) 375 351 550.0 545.2 555.6 551.0 CIE-x 0.316(1) 0.303(1) CIE-y 0.537(1) 0.514(1) 2023PF00709 1 July 2024 P2023,0785 WO N - 125 - A comparison of the emission spectra E1a, E4a and E5a is shown in Figure 40. The emission spectrum E1a is based on the phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce3+, the emission spectrum E4a Li8Ho[LiSi4N4O8]:Ce 3+ and the emission spectrum E5a Li8Pr[LiSi4N4O8]:Ce 3+ The emission spectra were recorded at an excitation wavelength of 448 nanometers. Figure 40 shows the difference between exclusively broadband emission (Li8Gd[LiSi4N4O8]:Ce 3+ ) and the combined broadband emission and line emission (Li8Ho[LiSi4N4O8]:Ce 3+ and Li8Pr[LiSi4N4O8]:Ce 3+). Figure 41 shows simulated emission spectra of optoelectronic components 10 according to various embodiments. The optoelectronic components 10 each emit white light. The optoelectronic components each have a blue-emitting semiconductor chip 11. In the present case, the radiation-emitting semiconductor chip 11 emits electromagnetic radiation with a dominant wavelength λ dom of 447 nanometers. The optoelectronic components 10 each further comprise a conversion element 12. The optoelectronic component 10, which forms the basis of the emission spectrum LED-A4, comprises a conversion element 12 with Li8Ho[LiSi4N4O8]:Ce 3+ The optoelectronic component 10, which forms the basis of the emission spectrum LED-A5, has a conversion element 12 with Li8Gd[LiSi4N4O8]:Ce 3+The optoelectronic component 10, which forms the basis of the emission spectrum LED-A6, has a conversion element 12 with Li8Pr[LiSi4N4O8]:Ce 3+ With the optoelectronic components 10, a CRI of approximately 70 can be achieved. Thus, the 2023PF00709 1 July 2024 P2023,0785 WO N - 126 - phosphors 1 according to the embodiments with the molecular formula Li8MC[LiSi4N4O8]:Ce 3+ with MC = Gd, Pr, Ho as phosphors for optoelectronic components 10 in whose conversion element 12 only one phosphor 1 is used. A phosphor mixture is not necessary to achieve the CRI of approximately 70. However, the optoelectronic components 10 have different color temperatures. With Li8Pr[LiSi4N4O8]:Ce 3+In particular, high color temperatures, in particular greater than 25,000 K, for example approximately 50,000 K, can be achieved for the corresponding optoelectronic component 10. Figure 42 shows a secondary electron image of crystals of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ as a result of a SEM examination at 15 kV accelerating voltage. Li8Nd[LiSi4N4O8]:Ce 3+ is present in the form of isolated, cuboid-shaped crystals. A measured powder diffractogram P5 and a calculated powder diffractogram P6 of a phosphor 1 are shown in Figure 43. The measured powder diffractogram P5 is based on a powder sample of the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The calculated powder diffractogram was based on the structural model of single crystals of Li8Nd[LiSi4N4O8]:Ce 3+The agreement of the powder diffractograms P5 and P6 shows that the majority of the crystallites in the powder sample of Li8Nd[LiSi4N4O8]:Ce 3+ the same structure as the single crystal of Li8Nd[LiSi4N4O8]:Ce 3+ The powder sample contains minor phases to a small extent. Reflections caused by the minor phases are marked with a cross. The different intensities of some reflections in the comparison between the measured powder diffractogram P5 and the calculated powder diffractogram P6 could be the result of a preferential orientation of the cuboid crystals, whereby some surfaces are in the diffraction position more frequently than statistically expected. The composition of the phosphor 1 with the empirical formula Li8Nd[LiSi4N4O8]:Ce 3+was further confirmed by SEM-EDX analysis. The SEM-EDX analysis was performed at an accelerating voltage of 15 kV. The SEM-EDX analysis revealed a ratio (Nd+Ce):Si of 1:4.3(1), which confirms the composition within the measurement error. By incorporating Ce 3+ as an activator element Li8Nd[LiSi4N4O8]:Ce 3+ a compound with phosphor properties. Figure 44 shows an emission spectrum E6a of a single crystal of the phosphor 1 according to the embodiment with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ The emission spectrum E6a was recorded at an excitation wavelength of 448 nanometers and is shown in a wavelength range from 470 nanometers to 970 nanometers. In this range, the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+an emission maximum at about 903 nanometers. Figure 45A shows an emission spectrum E6b of the powder sample of phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ shown. The excitation wavelength here is 450 nanometers, and the emission spectrum E6b is shown in a wavelength range from 750 nanometers to 1500 nanometers. Detailed spectra of the emission spectrum E6b are shown in Figures 45B, 45C, and 45D. In addition to an emission at approximately 901 nanometers, Li8Nd[LiSi4N4O8]:Ce3+ also exhibits an emission peak at approximately 1076 nanometers and an emission peak at approximately 1355 nanometers. The phosphor 1 can thus emit electromagnetic radiation in the near-infrared to infrared range of the electromagnetic spectrum. Compared to the phosphors 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ and Li8Dy[LiSi4N4O8]:Ce 3+In this case, the broadband emission of the activator element Ce does not dominate 3+ , which is caused by a 5d→4f transition, but a line emission of the optically active Nd 3+ The line emission is caused by 4f→4f transitions in the Nd 3+ Furthermore, the broadband emission of the activator element Ce 3+ at Li8Nd[LiSi4N4O8]:Ce 3+ unlike Li8Ho[LiSi4N4O8]:Ce 3+ and Li8Pr[LiSi4N4O8]:Ce 3+ almost non-existent, which indicates that in this case the activator element Ce 3+ acts as a sensitizer and a particularly effective energy transfer from Ce 3+ on Nd 3+ It could therefore be the case that the Ce 3+ and then a particularly efficient energy transfer to Nd 3+ Accordingly, mainly the corresponding line emission of Nd 3+ and only slightly the broadband emission of Ce3+ observed. Figure 46 shows a secondary electron image of crystals of the embodiment of the phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ as a result of a SEM examination at 25 kV accelerating voltage. Li8Y[LiSi4N4O8]:Ce 3+ is present in the form of isolated, cuboid-shaped crystals. The crystals form an agglomerate. 2023PF00709 July 1, 2024 P2023,0785 WO N - 129 - A measured powder diffractogram P7 and a calculated powder diffractogram P8 of a phosphor 1 are shown in Figure 47. The measured powder diffractogram P7 is based on a powder sample of the phosphor 1 with the empirical formula Li8Y[LiSi4N4O8]:Ce 3+ The calculated powder diffractogram was based on the structural model of single crystals of Li8Dy[LiSi4N4O8]:Ce 3+The agreement of the powder diffractograms P7 and P8 shows that the majority of the crystallites in the powder sample of Li8Y[LiSi4N4O8]:Ce 3+ the same structure as the single crystal of Li8Dy[LiSi4N4O8]:Ce 3+ However, the positions of Dy in the crystal structure of Li8Y[LiSi4N4O8]:Ce3+ are occupied by Y. The powder sample contains minor phases. Reflections caused by the minor phases are marked with a cross. In this case, the minor phase is Y2O3. The composition of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+was further confirmed by SEM-EDX analyses. The SEM-EDX analysis was performed at an acceleration voltage of 25 kV. Averaged over two measurements, the SEM-EDX analysis yielded a ratio (Y+Ce):Si of 1:4.1(4), which confirms the composition within the measurement error. Due to the activator element E, the exemplary embodiment of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ Phosphor properties. An excitation spectrum A3 and an emission spectrum E3a of a powder sample of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ are shown in Figure 48. The excitation spectrum A3 is based on the raw data maximum of the emission curve, which is located at approximately 505 nanometers. The emission spectrum E3a was recorded at an excitation wavelength of 440 nanometers. The phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+has an emission maximum λ max at about 519 nanometers. Further optical data of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ are summarized in Table 48. Table 48 shows the optical data for a powder sample and a single crystal of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ . Table 48: Optical data for Li8Y[LiSi4N4O8]:Ce 3+ . LiY[LiSiNO]:Ce3+ LiY 3+ 8 4 4 8 8[LiSi4N4O8]:Ce (powder sample) (single crystal) 439 431 518.8 517.0 554.1 553.4 546.9 546.8 115.7 118.3 CIE-x 0.332(1) 0.329(1) CIE-y 0.545(1) 0.547(1) Figure 49A shows emission spectra E3a, E3b and V1 of phosphors 1. The emission spectrum E3a for the powder sample of the embodiment of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+was recorded at an excitation wavelength of 440 nanometers. The emission spectrum E3b for a single grain of the exemplary embodiment of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ was recorded at an excitation wavelength of 448 nanometers. The emission spectrum V1 of the comparative example of a phosphor 1 with the molecular formula Lu3(Al / Ga)5O12:Ce 3+ was recorded at an excitation wavelength of 460 nanometers. The emission spectra show that the emissions from Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ are spectrally comparable and have a similar profile to 2023PF00709 1 July 2024 P2023,0785 WO N - 131 -. Due to the similar emission of Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ Lu3(Al / Ga)5O 12 :Ce 3+ in conventional optoelectronic components by Li8Y[LiSi4N4O8]:Ce 3+In particular, the color coordinates and the dominant wavelength λ dom of the phosphor 1 of the embodiment and the comparative example. Selected optical data of Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ are summarized in Table 49. Table 49: Comparison of the optical data of Li8Y[LiSi4N4O8]:Ce 3+ and Lu3(Al / Ga)5O 12 :Ce 3+ . LiY[LiSiNO]:Ce LiY[LiSiNO]:Ce Lu(Al / Ga)O :Ce (powder) (single grain) (powder) Figure 49B shows the emission spectrum E3a and an emission spectrum E3c. The emission spectrum E3c was measured on a single crystal of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ measured. The emission spectrum E3c was recorded at an excitation wavelength of 448 nanometers. The temperature behavior of the exemplary embodiment of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+and a comparative example of a phosphor 1 with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ are shown in Figure 50. The x-axis indicates the temperature T in °C, and the y-axis indicates the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C for Li8Y[LiSi4N4O8]:Ce 3+ and 50 °C for Lu3(Al,Ga)5O 12 :Ce 3+ . The 2023PF00709 1 July 2024 P2023,0785 WO N - 132 - maximum temperature is 225 °C. The data points D1 of Li8Y[LiSi4N4O8]:Ce 3+ are marked with a square in Figure 50, the data points D2 of Lu3(Al,Ga)5O 12 :Ce 3+with a triangle. The phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce3+ exhibits a decrease in emission intensity with increasing temperature. However, at a temperature of approximately 125 °C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is still around 85%. At approximately 175 °C, the phosphor with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ improved thermal behavior compared to the comparative example with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ Simulated emission spectra LED-A7, LED-A8, LED-A9, LED-V8, LED-V9, LED-V10 of optoelectronic components 10 according to various embodiments and comparative examples are shown in Figures 51 to 53. The embodiments of the optoelectronic component 10 each comprise the phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Ce 3+in their conversion element 12. The comparative examples each contain the phosphor 1 with the molecular formula Lu3(Al,Ga)5O 12 :Ce 3+ (LuAGaG). Lu3(Al,Ga)5O 12 :Ce3+ has a Ga content of 25% relative to the sum of Al and Ga and a Ce content of approximately 2% relative to Lu. The conversion elements 12 each have at least one additional phosphor 14. The additional phosphor 14 is (Sr,Ca)AlSiN3:Eu. 2+ (SCASN). Furthermore, the conversion element can also contain Y3Al5O 12 :Ce 3+(YAG) with a Ce content of 1.6% based on Y as a further phosphor 14. The further phosphors 14 2023PF00709 July 1, 2024 P2023,0785 WO N - 133 - emit in the orange or red wavelength range of the electromagnetic spectrum. The radiation-emitting semiconductor chips 11 of the optoelectronic components 10 each have an emission peak in the blue range of the electromagnetic spectrum. The optoelectronic components 10 can emit white light. The precise composition of the optoelectronic components 10 for the exemplary embodiments and comparative examples, which lead to the emission spectra shown in Figures 51 to 53, and spectral data of the optoelectronic components 10 are summarized in the following Table 50. Table 50: Data on white light LED simulations.Example LED-A7 LED-V8 LED-A8 LED-V9 LED-A9 LED-V10 Blue LED 455 455 445 445 450 450 (λ / nm) Green phosphor LiY[LiSi LuAGaG LiY[LiSi LuAGaG LiY[LiSi LuAGaG NO]:Ce NO]:Ce NO]:Ce Orange phosphor SCASN1 SCASN1 YAG YAG - YAG Red phosphor SCASN2 SCASN2 SCASN1 SCASN1 SCASN4 SCASN4 CIE x 0.437 0.437 0.380 0.380 0.460 0.460 CIE y 0.404 0.404 0.377 0.377 0.411 0.411 CCT / K 3003 3002 4000 4000 2700 2700 CRI 81 82 70 70 90 90 R9 0 1 -35 -31 55 58 LER / lm / W 335 334 344 341 291 290 The optoelectronic components 10 were configured to achieve the highest possible color rendering quality at various color temperatures (CCT). The emission wavelength of the radiation-emitting semiconductor chip 11 and the phosphors 1, 14 were adjusted to achieve a specific target color location and a specific color rendering index (CRI).It is shown that with the phosphor 1 of the molecular formula Li8Y[LiSi4N4O8]:Ce. 3+ in the conversion element 12, a CRI of approximately 70, approximately 80, and approximately 90 can be achieved. Optoelectronic components 10 with a CRI of approximately 70 are suitable, for example, for street lighting, optoelectronic components 10 with a CRI of approximately 80 for general lighting, and optoelectronic components 10 with a CRI of approximately 90 for special lighting, such as retail lighting. The results show that with the phosphor 1 of the molecular formula Li8Y[LiSi4N4O8]:Ce 3+ the same or at least very similar colour coordinates or colour temperatures as well as the same or at least very similar colour rendering values ​​can be achieved as with Lu3(Al,Ga)5O 12 :Ce 3+ . Li8Y[LiSi4N4O8]:Ce 3+is therefore suitable for achieving optoelectronic components 10 with high color rendering at different color temperatures, different CRI target values ​​and different wavelengths of the radiation-emitting semiconductor chip 11. Surprisingly, the optoelectronic components 10 with Li8Y[LiSi4N4O8]:Ce 3+ higher LER values ​​than the optoelectronic components 10 with Lu3(Al,Ga)5O 12 :Ce 3+ . Li8Y[LiSi4N4O8]:Ce 3+ thus shows improved spectral efficiency in the application. Figures 54A and 54B show sections of an emission spectrum E6c of a phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+The emission spectrum E6c was recorded at an excitation wavelength of approximately 635 nanometers. Figure 54A shows the wavelength range from approximately 1000 nanometers to approximately 1200 nanometers, and Figure 54B shows the wavelength range from approximately 1300 nanometers to approximately 1500 nanometers. The emission spectrum E6c shows emission peaks at approximately 1076 nanometers and at approximately 1355 nanometers. The emission spectrum E6c therefore shows the same emission peaks in the near-infrared to infrared range as the emission spectra E6, E6a, and E6b. However, the emission peak at approximately 900 nanometers cannot be observed at an excitation wavelength of approximately 635 nanometers. It is thus shown that the f→f transition of Nd 3+can also be excited directly, i.e., without a sensitizer. In this case, excitation was performed with electromagnetic radiation from the red region of the electromagnetic spectrum. Figure 55 shows the emission intensity of phosphor 1 with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+Plotted logarithmically against time in nanoseconds, the decay time can be determined using this graph. The decay time τ, also known as the fluorescence decay time or fluorescence lifetime, indicates the average time the activator element remains in an excited state during fluorescence before emitting a photon and thus returning to the ground state. In this case, the decay time τ is approximately 46.7 nanoseconds and thus corresponds to the time at which half of the original integral photoluminescence intensity is present, i.e., half of the excited activator elements have already returned to the ground state by emitting a photon. Figure 56 shows the emission spectrum E6a of phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+in the range from 470 nanometers up to and including 970 nanometers. Furthermore, Figure 56 shows an emission spectrum E6d, which is also based on the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce3+. The emission spectrum E6d was measured on individual grains of the phosphor 1 with the molecular formula Li8Nd[LiSi4N4O8]:Ce 3+ measured. Furthermore, emission spectra E7 and E7a are shown in Figure 56. The emission spectra E7 and E7a originate from phosphors 1 according to the embodiment with the molecular formula Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ The emission spectra E6a, E6d, E7, and E7a were recorded at an excitation wavelength of 448 nanometers. The phosphors 1 each contain 5 mol% of the activator elements Ce 3+ or Ce 3+ and Nd 3+relative to Gd. Li8Nd[LiSi4N4O8] not doped with an activator element shows no emission when excited at a wavelength of 448 nanometers. In contrast, for Li8Nd[LiSi4N4O8]:Ce 3+ the emission spectra E6a and E6d are obtained. The emission spectra E7 and E7a of Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ show both the Ce 3+ characteristic emission band in the range from about 470 nanometers to about 620 nanometers as well as the Nd 3+ characteristic emission band in the range of about 870 nanometers to 930 nanometers, as can be seen in Figure 56. This suggests that an energy transfer from Ce 3+ on the Nd 3+ takes place. Because Ce 3+ merely as an activator element in Li8Nd[LiSi4N4O8]:Ce 3+ is present and not like Nd in stoichiometric amounts, for Li8Nd[LiSi4N4O8]:Ce 3+ virtually no emissions that affect the Ce3+ 2023PF00709 1 July 2024 P2023,0785 WO N - 137 - is observed. If the concentration of Ce 3+ and Nd 3+ but approximately the same as in Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+ , the emission bands of Ce 3+ and Nd 3+ observable. Figure 57 shows an image of crystals of the phosphor 1 according to the embodiment with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The image was obtained via secondary electrons as a result of an SEM examination at an accelerating voltage of 3 kV. Li8Tm[LiSi4N4O8]:Ce 3+ is present as isolated, cuboid-shaped crystals. Figure 58 shows a measured powder diffractogram P9 and a calculated powder diffractogram P10 of an embodiment of a phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+The measured powder diffractogram P1 was recorded using Mo K-L3 radiation. The calculated powder diffractogram P10 is based on the single-crystal data of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ . Due to the agreement of the measured powder diffractogram P9 with the calculated powder diffractogram P10, it can be confirmed that the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ represents the main phase of the powder sample. This shows that the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ can be specifically displayed. Minor phases, such as Tm2O3, are present in the powder sample. Reflection positions attributable to Tm2O3 are marked with a cross in Figure 58. Emission spectra E8 and E8a of the exemplary embodiment of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+2023PF00709 July 1, 2024 P2023,0785 WO N - 138 - are shown in Figure 59. The emission spectra E8 and E8a were recorded at an excitation wavelength of 448 nanometers and are shown in a wavelength range from 450 nanometers to 850 nanometers. The emission spectrum E8 is based on a powder sample of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ based on the emission spectrum E8a a single crystal of the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ The phosphor properties of the compound Li8Tm[LiSi4N4O8]:Ce 3+ can be determined by the presence of Ce 3+ as an activator element. The slight shift in the emission when comparing the emission spectra E8 and E8a can be explained by different concentrations of the activator element. The emission spectra E8 and E8a show the for Ce 3+characteristic broadband emission in the wavelength range from about 500 nanometers to about 650 nanometers. The broadband emission can be explained by 5d-4f transitions in the Ce 3+ However, in the emission spectra E8 and E8a there is also a line emission of the Tm 3+ This line emission occurs in the wavelength range from about 760 nanometers to about 830 nanometers. The line emission can be explained by a 4f-4f transition of the Tm 3+ Selected optical data for the powder sample and the single crystal of Li8Tm[LiSi4N4O8]:Ce 3+ are summarized in Table 51. Table 51: Selected optical data of Li8Tm[LiSi4N4O8]:Ce 3+ Li8Tm[LiSi4N4O8]:Ce3+ Li8Tm[LiSi4N4O8]:Ce3+ (powder sample) (single crystal) 2023PF00709 July 1, 2024 P2023,0785 WO N - 139 - Excitation wavelength / nm 448 448 FWHM / nm 122.1 119.5 λ dom / nm 562 557 λ max / nm 544.2 523.4 λ centroid / nm 583.6 566.0 CIE-x 0.376(1) 0.346(1) CIE-y 0.552(1) 0.548(1) LER / lm W opt. −1 404 407 Figure 60 shows an emission spectrum E8b of the powder sample of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ in the wavelength range from approximately 500 nanometers to approximately 700 nanometers, an excitation spectrum A4 was also recorded. The emission spectrum E8b was recorded at an excitation wavelength of 440 nanometers, provided by a Xe lamp. The excitation spectrum is based on the raw data maximum of the emission spectrum E8b. This is located at approximately 510 nanometers. Based on the emission spectrum E8b, the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ an emission maximum λ max at 543.7 nanometers. The full width at half maximum (FWHM) is 125.8 nanometers and the dominant wavelength λ dom560.7 nanometers. The temperature behavior of the exemplary embodiment of phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+ is shown in Figure 61. The x-axis represents the temperature T in °C, and the y-axis represents the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C. The maximum temperature is 100 °C. The phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+shows a decrease in the emission intensity with increasing temperature. At a temperature of approximately 100°C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is approximately 67%. Figure 62 shows simulated emission spectra LED-A10, LED-V11, and LED-V12 of optoelectronic components 10 according to one exemplary embodiment (LED-A10) and two comparative examples (LED-V11 and LED-V12). The emission spectra are each shown in a wavelength range from 400 nanometers to 800 nanometers. The optoelectronic components 10 each have a blue-emitting semiconductor chip 11 and a conversion element 12 with a phosphor 1. In the simulations, the concentration of phosphor 1 was adjusted so that a specific color location on the Planck curve was achieved.The comparative examples of the optoelectronic component 10 have Lu3(Al,Ga)5O as phosphor 1. 12 :Ce3+ (LuAGaG) or Y3(Al,Ga)5O 12 :Ce 3+ (YAGaG). The results and the design of the optoelectronic components 10 of the simulations are summarized in Table 52. Table 52: Data on white light LED simulations LED-A10 LED-V11 LED-V12 Blue LED (λ / nm) 447 447 447 Green phosphor (λ / nm) 562.0 562.2 561.9 Green phosphor LiTm[LiSiNO]:Ce LuAGaG YAGaG CIE x 0.266 0.263 0.261 CIE y 0.280 0.273 0.271 CCT / K 12671 14168 14932 CRI 70 68 66 CRI comparison in % 100 97 (-3%) 94 (-6%) 2023PF00709 1 July 2024 P2023,0785 WO N - 141 - The simulation results show, that the embodiment of the phosphor 1 with the molecular formula Li8Tm[LiSi4N4O8]:Ce 3+very well suited for use in white-emitting optoelectronic components 10. Advantageously, only one phosphor is required to achieve a CRI of at least 70. The improved CRI compared to the optoelectronic components 10 with the garnet phosphors can be achieved by emission of the Tm 3+ A radiation-emitting component 10 with a CRI of at least 70 can be used for street lighting. Figure 63 shows a secondary electron image of a crystal of a phosphor 1 according to the exemplary embodiment with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The secondary electron image is the result of an SEM examination at an accelerating voltage of 3 kV. The phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+is present as a cuboid crystal. Figure 64 shows a measured powder diffractogram P11 and a calculated powder diffractogram P12 of the exemplary embodiment of a phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The measured powder diffractogram P11 was recorded using Mo K-L3 radiation. The calculated powder diffractogram P12 is based on the single-crystal data of phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ . Due to the agreement of the measured powder diffractogram P11 with the calculated powder diffractogram P12, it can be confirmed that the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ represents the main phase of the powder sample. This shows that the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+can be specifically displayed. Minor phases, such as Tb2O3, are present in the powder sample. Reflection positions attributable to Tb2O3 are marked with a cross in Figure 64. Figure 65 shows a Rietveld-refined powder diffractogram R3 of phosphor 1 according to the embodiment with the empirical formula Li8Tb[LiSi4N4O8]:Ce 3+The powder diffractogram was recorded using Mo K-L3 radiation. The relative intensity I in arbitrary units is plotted against the diffraction angle 2θ in degrees. The crosses in the powder diffractogram represent the measured values ​​G1. The white solid line with a black border represents a calculated powder diffractogram G2. Line G3 represents the difference between the values ​​of curve G1 and curve G2. In other words, it is a difference diagram G3. The black markings G4 correspond to the theoretical reflection positions for Li8Tb[LiSi4N4O8] (top) and Tb2O3 (bottom). The theoretical reflection positions for Li8Tb[LiSi4N4O8] were determined based on the previously described crystal structure of host structure 2 of the phosphor with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+The Rietveld-refined powder diffractogram R3 shows that the structural model based on the measured single crystal is representative of the main phase of the powder sample. The crystallographic data of the Rietveld analysis of Li8Tb[LiSi4N4O8]:Ce 3+ are summarized in Table 53. Table 53: Results of Rietveld refinement of a powder sample of Li8Tb[LiSi4N4O8]:Ce 3+ Composition Li8Tb[LiSi4N4O8] / wt% 96.1(2) 2023PF00709 1 July 2024 P2023.0785 WO N - 143 - Tb2O3 / wt% 3.9(2) Crystallographic data Diffractometer STOE STADI P Radiation; Wavelength / Å Mo K-L3; 0.7093 a / Å 9.9287(3) c / Å 5.0328(2) Cell volume / Å 3 496.13(3) 2 θ Range / ° 2 – 40.085 2 θ Step size / ° 0.015 R exp / % 1.32 R wp / % 10.44 R p / % 6.57 R Bragg / % 3.817 Figure 66 shows emission spectra E9 and E9a of the embodiment of the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+The emission spectrum E9 results from a single crystal of Li8Tb[LiSi4N4O8]:Ce 3+ , whereas the emission spectrum E9a on a powder sample of Li8Tb[LiSi4N4O8]:Ce 3+ The emission spectrum E9 was recorded at an excitation wavelength of 448 nanometers, and the emission spectrum E9a at an excitation wavelength of 436 nanometers. The emission spectra E9 and E9a are each shown in a wavelength range from 440 nanometers to 740 nanometers. The phosphor properties of Li8Tb[LiSi4N4O8]:Ce 3+ can be achieved by the presence of the activator element Ce 3+ explain. The Ce 3+ In this case, 5d-4f transitions lead to a broadband emission. In addition to the broadband emission, a line emission of Tb is also present. 3+ The line emission results from 4f-4f transitions in the Tb 3+ Selected optical data of Li8Tb[LiSi4N4O8]:Ce 3+are summarized in Table 54. 2023PF00709 1 July 2024 P2023,0785 WO N - 144 - Table 54: Selected optical data of Li8Tb[LiSi4N4O8]:Ce3+ Li8Tb[LiSi4N4O8]:Ce3+ Li8Tb[LiSi4N4O8]:Ce3+ (powder sample) (single crystal) CIE-x 0.345(1) 0.342(1) CIE-y 0.537(1) 0.553(1) Figure 67 shows an emission spectrum E9b and two excitation spectra A5a and A5b of the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ The emission spectrum E9b was recorded with an excitation wavelength of 436 nanometers, provided by a Xe lamp. The excitation spectra A5a and A5b are based on the raw data maxima of the emission curve. The excitation spectrum A5a is based on the raw data maximum at approximately 506 nanometers, which corresponds to the Ce 3+ emission, and the excitation spectrum A5b is based on the raw data maximum at about 546 nanometers, which corresponds to the Tb 3+-emission. The emission maximum calculated for the emission spectrum E6b of Li8Tb[LiSi4N4O8]:Ce 3+ is 546.1 nanometers. A half-width of 105.9 nanometers and a dominant wavelength of 557.2 nanometers were also determined. The temperature behavior of the exemplary embodiment of phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+ is shown in Figure 68. The x-axis represents the temperature T in °C, and the y-axis represents the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C. The maximum temperature is 225 °C. The phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce 3+shows a decrease in the emission intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is still greater than 90%. Figure 69 shows simulated emission spectra LED-A11, LED-V13, and LED-V14 of optoelectronic components 10 according to one exemplary embodiment (LED-A11) and two comparative examples (LED-V13 and LED-V14). The emission spectra are each shown in a wavelength range from 400 nanometers to 750 nanometers. The optoelectronic components 10 each have a blue-emitting semiconductor chip 11 and a conversion element 12 with a phosphor 1. In the simulations, the concentration of phosphor 1 was adjusted so that a specific color location on the Planck curve was achieved.The results and the design of the optoelectronic components 10 of the simulations are summarized in Table 55. Table 55: Data for white light LED simulations LED-A11 LED-V13 LED-V14 blue LED (λ / nm) 447 447 447 Green phosphor (λ / nm) 556.1 556.2 557.0 Green phosphor LiTb[LiSiNO]:Ce LuAGaG LuAG CIE x 0.240 0.240 0.240 CIE y 0.252 0.259 0.256 CRI 70 65 63 CRI comparison in % 100 93 (-7%) 90 (-10%) The simulation results show that the embodiment of the phosphor 1 with the molecular formula Li8Tb[LiSi4N4O8]:Ce. 3+very well suited for use in white 2023PF00709 July 1, 2024 P2023,0785 WO N - 146 - emitting optoelectronic components 10. Advantageously, only one phosphor is required to achieve a CRI of at least 70. Such a radiation-emitting component 10 can be used for street lighting. The CRI advantage of the optoelectronic component 10 with the embodiment of the phosphor 1 with the empirical formula Li8Tb[LiSi4N4O8]:Ce 3+ can be determined by the emission of Tb 3+ , which are generated by the energy transfer from Ce 3+ Figure 70 shows a secondary electron image of a crystal of an embodiment of the phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ The secondary electron image is the result of a SEM examination at an accelerating voltage of 3 kV. Li8Er[LiSi4N4O8]:Ce 3+is present as an approximately cuboid-shaped crystal. Figure 71 shows a measured powder diffractogram P13 and a calculated powder diffractogram P14 of an embodiment of the phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ The measured powder diffractogram P13 was recorded using Mo K-L3 radiation. The calculated powder diffractogram P14 is based on the crystal structure data of a single crystal of Li8Er[LiSi4N4O8]:Ce described above. 3+ The measured powder sample contains Li8Er[LiSi4N4O8]:Ce 3+ , as can be seen from Figure 71. In addition, the powder sample contains the reactant Er2O3. The reflection positions attributable to Er2O3 are marked with a cross in Figure 71. 2023PF00709 July 1, 2024 P2023,0785 WO N - 147 - Emission spectra E10 and E10a of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+are shown in Figure 72. The emission spectrum E10 results from the powder sample of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ , the emission spectrum E10a of a single crystal of Li8Er[LiSi4N4O8]:Ce 3+ The emission spectra E10 and E10a are shown in a wavelength range from 470 nanometers to 1000 nanometers. An excitation wavelength of 448 nanometers was used to record the emission spectra E10 and E10a. Figure 73 shows a section of the emission spectrum E10 of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce3+ in the wavelength range from 840 nanometers to 1000 nanometers. Figure 74 shows a section of an emission spectrum E10b of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+The emission spectrum E10b was recorded using a different setup than the emission spectra E10 and E10a and at an excitation wavelength of 450 nanometers. The emission spectrum E10b is shown in the wavelength range from 840 nanometers to 1040 nanometers. Another section of the emission spectrum E10b of phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce 3+ is shown in Figure 75. Figure 75 shows the wavelength range from 1400 nanometers to 1700 nanometers. The phosphor 1 with the molecular formula Li8Er[LiSi4N4O8]:Ce3+ exhibits, in addition to the broadband emission of Ce 3+ in the wavelength range from about 470 nanometers to about 600 nanometers there is also a line emission of the Er 3+ The broadband emission of the Ce 3+ is due to 5d-4f transitions 2023PF00709 1 July 2024 P2023,0785 WO N - 148 -. The line emission of the Er 3+ is due to 4f-4f transitions. Li8Er[LiSi4N4O8]:Ce 3+exhibits line emission at approximately 546.5 nanometers, approximately 554.5 nanometers, as well as in the wavelength ranges 840 nanometers to 870 nanometers, 970 nanometers to 1000 nanometers, and 1450 nanometers to 1650 nanometers. Li8Er[LiSi4N4O8]:Ce3+ therefore emits in both the green to yellow wavelength range and the near-infrared wavelength range of the electromagnetic spectrum. For Li8Er[LiSi4N4O8]:Ce 3+ However, it does not dominate the broadband emission of Ce 3+ , such as Li8Gd[LiSi4N4O8]:Ce 3+ and Li8Dy[LiSi4N4O8]:Ce 3+ Furthermore, compared to Li8MC[LiSi4N4O8]:Ce 3+ with MC equal to Pr, Ho, Tb or Tm the intensity of the broadband emission of Ce 3+ significantly reduced. This indicates an energy transfer from Ce 3+ on He 3+ there. Ce 3+ serves as a sensitizer in this case. Therefore, the Ce 3+ stimulated, whereupon an energy transfer to the Er 3+Based on Er 3+ the observed line emission occurs. Secondary electron images of an embodiment of phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ are shown in Figures 76A and 76B. The secondary electron images are the result of an SEM examination at an acceleration voltage of 3 kV. Figure 77 shows a measured powder diffractogram P15 and a calculated powder diffractogram P16 of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ The measured powder diffractogram P15 was recorded using Mo K-L3 radiation. The calculated powder diffractogram P16 is based on the crystal structure data of a single crystal of Li8Lu[LiSi4N4O8]:Ce described above. 3+ The measured powder sample contains Li8Lu[LiSi4N4O8]:Ce 3+as the main phase, as can be seen in Figure 77. In addition, LuN is present in the powder sample as a secondary phase. The reflection positions of the LuN are marked with a cross in Figure 77. Due to the presence of the activator element Ce 3+ has Li8Lu[LiSi4N4O8]:Ce 3+ Phosphor properties. Figure 78 shows an excitation spectrum A6 and an emission spectrum E11 of a powder sample of Li8Lu[LiSi4N4O8]:Ce 3+ The excitation spectrum A6 and the emission spectrum E11 are shown in a wavelength range from 270 nanometers to 720 nanometers. The excitation spectrum A6 is based on the raw data maximum of the emission spectrum E11, which lies at approximately 520 nanometers. The emission spectrum E11 was recorded at an excitation wavelength of 440 nanometers. Selected optical data of the powder sample and a single crystal of Li8Lu[LiSi4N4O8]:Ce 3+are summarized in Table 56. Table 56: Selected optical data of Li8Lu[LiSi4N4O8]:Ce3+ LiLu[LiSiNO]:Ce3+ LiLu[LiSiN 3+ 8 4 4 8 8 4 4O8]:Ce (powder sample) (single crystal) 429 556.9 566.9 569.1 135.1 144.9 CIE-x 0.406(1) 0.438(1) CIE-y 0.530(1) 0.512(1) 2023PF00709 1 July 2024 P2023,0785 WO N - 150 - Figure 79 shows an emission spectrum E11a of a powder sample of the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce3+ as well as an emission spectrum E11b of a single crystal of Li8Lu[LiSi4N4O8]:Ce 3+The emission spectrum E11a was recorded at an excitation wavelength of 440 nanometers, and the emission spectrum E11b at an excitation wavelength of 448 nanometers. The emission spectra E11a and E11b are shown in a wavelength range from 440 nanometers to 740 nanometers. A comparison of the emission spectra E11a and E11b shows that the emission of the single crystal is representative of the emission of the powder sample. Figure 80 shows the emission spectrum E11a of phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ also emission spectra V2 and V3 of comparative examples of a phosphor 1 in a wavelength range from 470 nanometers to 740 nanometers. The emission spectrum V2 results from a comparative example with the molecular formula Y3Al5O 12 :Ce3+ (YAG). The emission spectrum V3 results from a comparison example with the molecular formula Y3(Al,Ga)5O 12 :Ce 3+(YAGaG). The emission spectra V2 and V3 were recorded at an excitation wavelength of 460 nanometers. Selected optical data of Li8Lu[LiSi4N4O8]:Ce 3+ , Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+ are summarized in Table 57. Table 57: Selected optical data of Li8Lu[LiSi4N4O8]:Ce 3+ and two comparison examples LiLu[LiSiNO]:Ce YAlO :Ce Y(Al / Ga)O :Ce (powder sample) (powder) (powder) 429 457 455 556.9 542.2 548.2 566.9 567.2 567.1 569.1 573.1 573.0 135.1 117.1 116.0 0.406(1) 0.415(1) 0.415(1) 0.530(1) 0.550(1) 0.551(1) 2023PF00709 1 July 2024 P2023,0785 WO N - 151 - The emission spectra E11a, V2 and V3 shown in Figure 80 as well as the optical data from Table 57 show that the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce3+ has comparable optical properties to the phosphors Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+For example, the emission spectra have a comparable profile and the emission spectra of the phosphors 1 have similar dominant wavelengths λ dom Thus, Li8Lu[LiSi4N4O8]:Ce3+ can be used as a replacement for Y3Al5O 12 :Ce 3+ and Y3(Al,Ga)5O 12 :Ce 3+ in conversion elements 12 of optoelectronic components 10. The temperature behavior of the exemplary embodiment of the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+ is shown in Figure 81. The x-axis represents the temperature T in °C, and the y-axis represents the quotient of the integral intensity of the emission at the current temperature and that at 25 °C. The step size is 25 °C. The maximum temperature is 225 °C. The phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+shows a decrease in emission intensity with increasing temperature. However, at a temperature of approximately 100°C, which corresponds to a typical operating temperature of optoelectronic components, the relative emission intensity is still greater than 75%. Figure 82 shows simulated emission spectra LED-A12, LED-V15, and LED-V16 of optoelectronic components 10 according to one exemplary embodiment (LED-A12) and two comparative examples (LED-V15 and LED-V16). The emission spectra are each shown in a wavelength range from 400 nanometers to 750 nanometers. The 2023PF00709 July 1, 2024 P2023,0785 WO N - 152 - optoelectronic components 10 each have a blue-emitting semiconductor chip 11 and a conversion element 12 with a phosphor 1. In the simulations, the concentration of phosphor 1 was adjusted so that a specific color location on the Planck curve was achieved.The results and the design of the optoelectronic components 10 of the simulations are summarized in Table 58. Table 58: Data on white light LED simulations. LED-A12 LED-V15 LED-V16 Blue LED (λ / nm) 447 447 447 Green phosphor (λ / nm) 566.9 567.2 567.1 Green phosphor LiLu[LiSiNO]:Ce YAG YAGaG CIE x 0.310(1) 0.310(1) 0.309(1) CIE y 0.330(1) 0.330(1) 0.330(1) CCT / K 6668 6679 6680 CRI 74 66 66 CRI comparison in % 100 89 (-11%) 89 (-11%) The simulation results show that an optoelectronic component 10 with the phosphor 1 with the molecular formula Li8Lu[LiSi4N4O8]:Ce. 3+ has an improved CRI compared to optoelectronic components with the phosphors 1 YAG and YAGaG. The optoelectronic component 10 with the phosphor 1 of the molecular formula Li8Lu[LiSi4N4O8]:Ce 3+has a CRI of over 70 even without an additional phosphor 14. Such an optoelectronic component 10 is therefore suitable for street lighting. A secondary electron image of an embodiment of the phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce3+ is shown in Figure 83. The image is the result of an SEM examination at an acceleration voltage of 2023PF00709 July 1, 2024 P2023,0785 WO N - 153 - 3 kV. Li8Yb[LiSi4N4O8]:Ce 3+ In this case, it has the form of cuboid crystals. Figure 84 shows a measured powder diffractogram P17 and a calculated powder diffractogram P18 of phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ The measured powder diffractogram P17 was obtained from a powder sample of Li8Yb[LiSi4N4O8]:Ce 3+ measured with Mo K-L3 radiation. The calculated powder diffractogram P18 is based on the crystal structure data of Li8Yb[LiSi4N4O8]:Ce 3+, which were previously described. The measured powder diffractogram P17 and the calculated powder diffractogram P18 of Li8Yb[LiSi4N4O8]:Ce 3+ agree well, as can be seen from Figure 84. The main phase of the powder sample is therefore Li8Yb[LiSi4N4O8]:Ce 3+ . It is thus shown that Li8Yb[LiSi4N4O8]:Ce 3+ can be produced specifically. Due to the presence of the activator element Ce 3+ The phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce3+ exhibits phosphor properties. These are shown, for example, by the phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+ emitted emission spectrum E12, which is shown in Figure 85. The emission spectrum E12 was measured on the powder sample of Li8Yb[LiSi4N4O8]:Ce 3+ and recorded at an excitation wavelength of 448 nanometers. Selected optical data of phosphor 1 with the molecular formula Li8Yb[LiSi4N4O8]:Ce 3+and two comparative examples are shown in Table 59. Table 59: Selected optical data of Li8Yb[LiSi4N4O8]:Ce 3+ and two comparison examples LiYb[LiSiNO]:Ce LuAG:Ce YAGaG:Ce LER / lm W 402 454 461 2023PF00709 1 July 2024 P2023,0785 WO N - 154 - 543 549 542 565,9 565,6 565,4 577,9 570,5 568,4 137.8 111.7 114.4 CIE-x 0.401(1) 0.404(1) 0.402(1) CIE-y 0.539(1) 0.555(1) 0.556(1) The selected optical data show that Li8Yb[LiSi4N4O8]:Ce 3+ has a comparable emission as the comparative examples of the phosphor 1. In an optoelectronic component 10, a phosphor 1 according to one of the comparative examples can advantageously be replaced by the embodiment of the phosphor 1 with the empirical formula Li8Yb[LiSi4N4O8]:Ce 3+ A secondary electron image of a crystal of an embodiment of the phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+is shown in Figure 86. The secondary electron image is the result of a SEM examination at an accelerating voltage of 3 kV. The crystal was grown from a powder sample of Li8Sm[LiSi4N4O8]:Ce 3+ isolated. Figure 87 shows a measured powder diffractogram P19 and a calculated powder diffractogram P20 of the phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ The measured powder diffractogram P19 was obtained from a powder sample of Li8Sm[LiSi4N4O8]:Ce 3+ measured with Mo K-L3 radiation. The calculated powder diffractogram P20 is based on the crystal structure data of Li8Sm[LiSi4N4O8]:Ce 3+ which were previously described. As can be seen from the comparison of the measured powder diffractogram P19 with the calculated powder diffractogram P20, the main phase of the powder sample is phosphor 1 with the molecular formula 2023PF00709 1 July 2024 P2023,0785 WO N - 155 - Li8Sm[LiSi4N4O8]:Ce 3+. This shows that the phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ can be specifically produced. In the powder sample of phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ However, unidentified secondary phases are included. The reflection positions caused by the secondary phases are marked with a cross in Figure 87. Emission spectra E13 and E13a of phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ are shown in Figure 88. The emission spectrum E13 results from the powder sample of Li8Sm[LiSi4N4O8]:Ce 3+ The emission spectrum E13a results from a single crystal of Li8Sm[LiSi4N4O8]:Ce 3+ The emission spectra are shown in a wavelength range from 480 nanometers to 750 nanometers. An excitation wavelength of 448 nanometers was used to record the emission spectra E13 and E13a. In addition to the broadband emission of the Ce 3+, which are caused by 5d-4f transitions in the Ce 3+ is caused, the emission spectra E13 and E13a also include the line emission of the Sm 3+ The line emission is caused by 4f-4f transitions in the Sm 3+ The activator element Ce 3+ acts as a sensitizer and transfers part of its energy to the Sm 3+ . Selected optical data of phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce3+ are summarized in Table 60. Table 60: Selected optical data of Li8Sm[LiSi4N4O8]:Ce 3+ . Li8Sm[LiSi4N4O8]:Ce3+ Li8Sm[LiSi4N4O8]:Ce3+ (powder sample) (single crystal) 2023PF00709 July 1, 2024 P2023,0785 WO N - 156 - LER / lm Wopt. −1 416 407 560.5 561.3 558.7 562.8 CIE-x 0.364(1) 0.369(1) CIE-y 0.535(1) 0.536(1) Due to its optical properties, the phosphor 1 has the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+advantageously used in a conversion element 12 of an optoelectronic component 10. A simulated emission spectrum LED-A13 of such an optoelectronic component 10 is shown in Figure 89. Figure 89 also shows simulated emission spectra LED-V17 and LED-V18 of comparative examples of optoelectronic components 10. In the comparative examples, Lu3(Al,Ga)5O was used as phosphor 1. 12 :Ce 3+ (LuAGaG) or Y3(Al,Ga)5O 12 :Ce 3+ (YAGaG). The composition of the optoelectronic component 10 with the phosphor 1 with the formula Li8Sm[LiSi4N4O8]:Ce 3+and the comparative examples of the optoelectronic components 10 were adjusted to achieve a specific color location on the Planck curve. The optoelectronic components 10 therefore emit white light. Details of the optoelectronic components 10 are summarized in Table 61. Table 61: Data on white light LED simulations LED-A13 LED-V17 LED-V18 Blue LED (λ / nm) 447 447 447 Green phosphor (λ / nm) 560.5 560.5 561.0 Green phosphor LiSm[LiSiNO]:Ce LuAGaG YAGaG CIE x 0.259(1) 0.257(1) 0.257(1) CIE y 0.269(1) 0.272(1) 0.270(1) 2023PF00709 July 1, 2024 P2023,0785 WO N - 157 - The results show that the phosphor 1 with the molecular formula Li8Sm[LiSi4N4O8]:Ce 3+ very well suited to provide an optoelectronic component 10 with a CRI of greater than 70. Only Li8Sm[LiSi4N4O8]:Ce 3+as phosphor 1 in the conversion element 12 and no further phosphor 14 is required. Such an optoelectronic component 10 can be used in street lighting. A CRI of 70 is not achieved with the comparative examples. Figure 90 shows emission spectra E14 and E14a of a phosphor 1 according to an embodiment. The phosphor 1 has the empirical formula Li8Y[LiSi4N4O8]:Eu 2+ The emission spectra are shown in a wavelength range from 450 nanometers to 850 nanometers and were recorded at an excitation wavelength of approximately 448 nanometers. The emission spectrum E14 results from a powder sample of phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Eu 2+ The emission spectrum E14a of a single crystal of Li8Y[LiSi4N4O8]:Eu 2+ . Selected optical data of the single crystal of Li8Y[LiSi4N4O8]:Eu 2+are summarized in Table 62. Table 62: Optical data of Li8Y[LiSi4N4O8]:Eu 2+ Li8Y[LiSi4N4O8]:Eu2+ LER / lm W opt. −1 330 λ max / nm 568.3 λ dom / nm 573.2 λ centroid / nm 610.6 FWHM / nm 170.4 2023PF00709 1 July 2024 P2023,0785 WO N - 158 - CIE-x 0.450(1) CIE-y 0.508(1) Compared to Li8Y[LiSi4N4O8]:Ce 3+ emits Li8Y[LiSi4N4O8]:Eu 2+ at longer wavelengths. The emission of Li8Y[LiSi4N4O8]:Eu 2+ is compared to the corresponding Ce 3+ -doped compound is shifted to lower energies. The single crystal of Li8Y[LiSi4N4O8]:Eu 2+ was prepared from the powder sample of Li8Y[LiSi4N4O8]:Eu 2+ isolated. The single crystal exhibits a yellow-orange glow. A 180° phi scan for cell determination yielded lattice parameters a = 9.91(1), c = 5.01(1), and V = 492(1) Å. 3The values ​​of this rapid cell determination agree with those of the corresponding, more accurate single crystal measurement of Li8Y[LiSi4N4O8]:Ce 3+ (a = 9.9152(6), c = 5.0240(5), V = 493.92(6) Å 3 ) very well. Due to the agreement regarding metric (tetragonal) and lattice parameters, it is shown that Li8Y[LiSi4N4O8]:Eu 2+ the same structure as Li8Y[LiSi4N4O8]:Ce 3+ Averaged over three measurement points on the single crystal of Li8Y[LiSi4N4O8]:Eu 2+ A SEM-EDX analysis at an acceleration voltage of 25 kV shows a ratio (Y+Eu):Si of 1:4.3(1), which, within the measurement error, indicates the composition of the target phase, namely Li8Y[LiSi4N4O8]:Eu 2+ , confirmed. The phosphor 1 according to the embodiment with the molecular formula Li8Y[LiSi4N4O8]:Eu 2+ can be prepared as follows: The phosphor 1 with the molecular formula Li8Y[LiSi4N4O8]:Eu 2+is prepared from the reactants Si3N4, SiO2, Li2O and Y2O3 in a molar ratio of 2:2:10.5:0.8, possibly a flux such as LiF or Li with up to 5 wt.% and with EuF2 as reactant for the activator element Eu 2+ The activator element Eu 2+ has a content in the range between 0.01 mol% and 15 mol%, in particular in the range between 0.1 mol% and 5 mol% with respect to Lu. The exact weights for the preparation of Li8Y[LiSi4N4O8]:Eu 2+are summarized in Table 63. Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and reacted in a Ta tube in a tube furnace. After filling the Ta tube with the reactants, it is sealed with an arc welded in an Ar atmosphere. The material is synthesized at a first temperature of approximately 940 °C, which is maintained for approximately 12 hours. The material is then cooled to a second temperature of approximately 500 °C at a rate of approximately 2 °C / h. In a second cooling step, the material is cooled to a third temperature of approximately 150 °C at a rate of approximately 18 °C / h, and the furnace is then switched off. Table 63: Sample weights for the synthesis of Li8Y[LiSi4N4O8]:Eu 2+. Amount of starting material Si3N429.84 mg (0.213 mmol) SiO212.78 mg (0.213 mmol) Li2O33.37 mg (1.117 mmol) Y2O319.98 mg (0.085 mmol) EuF24.04 mg (0.021 mmol) The features and exemplary embodiments described in connection with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures can alternatively or additionally have further features according to the description in the general part. This patent application claims priority from German patent applications 102023 117 837.7 and 102023 132 659.7, the disclosures of which are hereby incorporated by reference. The invention is not limited to these embodiments by the description based on the exemplary embodiments.Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.

[0002] 2023PF00709 July 1, 2024 P2023,0785 WO N - 161 - List of reference symbols 1 phosphor 2 host structure 3 first layer 31 SiO2N2 tetrahedron 32 LiO4 tetrahedron 4 MC atom 41 square antiprism 5 four-rings 6 channel 7 O atom 8 N atom 9 second layer 91 LiO4N bipyramid 92 LiO3N2 bipyramid 10 optoelectronic component 11 radiation-emitting semiconductor chip 111 active region 12 conversion element 121 matrix material 13 housing 14 further phosphor 15 intermediate layer 16 converting encapsulation 17 non-converting encapsulation CCT color temperature CRI color rendering index FWHM half-width I intensity LER photometric radiation equivalent 2023PF00709 1 July 2024 P2023.0785 WO N - 162 - T Temperature D1, D2 Data points R1 Rietveld refinement of Li8Gd[LiSi4N4O8]:Ce 3+R2 Rietveld refinement of Li8Dy[LiSi4N4O8]:Ce3+ R3 Rietveld refinement of Li8Tb[LiSi4N4O8]:Ce3+ G1 Measured diffractogram G2 Calculated diffractogram G3 Difference diagram G4 Calculated reflection positions P1, P3, P5, P7, P9, P11, P13, P15, P17, P19 Measured powder diffractogram P2, P4, P6, P8, P10, P12, P14, P16, P18, P20 Calculated powder diffractogram A1, A2, A3, A4, A5a, A5b, A6 Excitation spectrum E1, E1a Emission spectrum of Li8Gd[LiSi4N4O8]:Ce3+ E2, E2a, E2b Emission spectrum of Li8Dy[LiSi4N4O8]:Ce 3+ E3, E3a, E3b, E3c Emission spectrum of Li8Y[LiSi4N4O8]:Ce3+ E4, E4a Emission spectrum of Li8Ho[LiSi4N4O8]:Ce3+ E5, E5a, E5b Emission spectrum of Li8Pr[LiSi4N4O8]:Ce3+ E6, E6a, E6b, E6c, E6d Emission spectrum of Li8Nd[LiSi4N4O8]:Ce 3+ E7, E7a Emission spectrum of Li8Gd[LiSi4N4O8]:Ce 3+ ,Nd 3+E8, E8a, E8b Emission spectrum of Li8Tm[LiSi4N4O8]:Ce3+ E9, E9a, E9b Emission spectrum of Li8Tb[LiSi4N4O8]:Ce3+ E10, E10a, E10b Emission spectrum of Li8Er[LiSi4N4O8]:Ce 3+ E11, E11a, E11b Emission spectrum of Li8Lu[LiSi4N4O8]:Ce3+ E12 Emission spectrum of Li3+ 8Yb[LiSi4N4O8]:Ce E13, E13a Emission spectrum of Li8Sm[LiSi4N4O8]:Ce3+ 2023PF00709 1 July 2024 P2023,0785 WO N - 163 - E14, E14a Emission spectrum of Li8Y[LiSi4N4O8]:Eu2+ V1 Emission spectrum of Lu3(Al,Ga)5O 12 :Ce3+ V2 emission spectrum of Y3Al5O 12 :Ce3+ V3 emission spectrum of Y3(Al,Ga)5O 12 :Ce 3+ S1, S2, S3 Process steps LED-A1 to LED-A13 simulated emission spectrum LED-V1 to LED-V18 simulated emission spectrum

Claims

2023PF00709 1 July 2024 P2023,0785 WO N - 164 - Claims 1. Phosphor (1) with the molecular formula Li 8-2x-a MB x+c MF a MC 1-c [MAMD 4-z-b ME z MG b N 4-z+b-c O 8+z-b+c]:E, where - 0 ≤ x ≤ 4, 0 ≤ c ≤ 1, 0 ≤ z ≤ 4, 0 ≤ a ≤ 8, 0 ≤ b ≤ 4, - 0 ≤ 2x+a ≤ 8, 0 ≤ z+b ≤ 4, -4 ≤ -z+bc ≤ 4, - MB is an element or a combination of elements selected from the group of divalent elements, - MC is an element or a combination of elements selected from the group of trivalent elements, - MA is Li and / or Na, - MD is an element or a combination of elements selected from the group of tetravalent elements, - ME is an element or a combination of elements selected from the group of trivalent elements, - MF is an element or a combination of elements selected from the group of monovalent elements, - MG is an element or a combination of elements selected from the group of pentavalent elements, and - E is an activator element. 2.Phosphor (1) according to the preceding claim, wherein - MB is an element or a combination of elements selected from the following group: Be, Mg, Ca, Sr, Ba, Zn, - MC is an element or a combination of elements selected from the following group: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, - MD is an element or a combination of elements selected from the following group: Si, Ge, Sn, Pb, Ti, Zr, Hf,. 2023PF00709 July 1, 2024 P2023,0785 WO N - 165 - - ME is an element or a combination of elements selected from the following group: B, Al, Ga, In, Sc, Cr, - MF is an element or a combination of elements selected from the following group: Na, K, Rb, Cs, Au, Cu, Pt, Ag, - MG is an element or a combination of elements selected from the following group: V, Nb, Ta, P, As, Sb, and / or - E is an element or a combination of elements selected from the following group: Eu, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb, Mn, Cr, Ni, Bi, Cu, Ag, Ti, U.

3. Phosphor (1) according to one of the preceding claims, wherein the phosphor has the empirical formula Li8MC[LiSi4N4O8]:E.

4. The phosphor (1) according to any one of the preceding claims, wherein a crystal structure of a host structure of the phosphor comprises at least one structural element selected from the following group: MA(N,O)4 tetrahedron, MD(N,O)4 tetrahedron, ME(N,O)4 tetrahedron, MG(N,O)4 tetrahedron. 5.The phosphor (1) according to any one of the preceding claims, wherein MC and / or E are eight-coordinated in the crystal structure of the host structure of the phosphor.

6. The phosphor (1) according to any one of the preceding claims, wherein MC is an element or a combination of elements selected from the group consisting of Gd, Dy, Ho, Pr, Nd, Y, Tb, Er, Tm, Lu, Sm, and Yb.

7. The phosphor (1) of the. 2023PF00709 July 1, 2024 P2023,0785 WO N - 166 - - an element or a combination of elements selected from the group of monovalent elements, - an element or a combination of elements selected from the group of trivalent elements, - an element or a combination of elements selected from the group of tetravalent elements, - oxygen and / or nitrogen, and - an activator element E.

8. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has an emission spectrum with an emission maximum in the green to yellow range of the electromagnetic spectrum.

9. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has an emission spectrum with an emission maximum in the near-infrared to infrared range of the electromagnetic spectrum. 10.The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has an emission spectrum with an emission maximum in the green to yellow range of the electromagnetic spectrum and with an emission maximum in the orange to red range and / or near-infrared to infrared range of the electromagnetic spectrum.

11. A method for producing a phosphor (1) according to any one of the preceding claims, comprising the steps of: - providing reactants, - blending the reactants to form a reactant mixture, - heating the reactant mixture. 2023PF00709 July 1, 2024 P2023,0785 WO N - 167 - 12. A method for producing a phosphor (1) according to claim 11, wherein the heating takes place to a first temperature in the range between 700°C and 1600°C inclusive.

13. Use of the phosphor (1) according to one of claims 1 to 10 in a light source.

14. An optoelectronic component (10) comprising - a radiation-emitting semiconductor chip (11) and - a conversion element (12) comprising the phosphor (1) according to one of claims 1 to 10.

15. An optoelectronic component (10) according to claim 14, wherein the conversion element (12) comprises at least one further phosphor.

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