Image sensor assembly with high-sensitive pixel element and low-sensitive pixel element

Abstract

An image sensor assembly (70) includes a pixel row (11) that includes a high-sensitive first pixel element and a low-sensitive second pixel element (302). The first pixel element (301) converts incident radiation received during a first exposure time into a pixel voltage. The second pixel element (302) converts incident radiation received during a second exposure time into a pixel voltage. The first exposure time is shorter than the second exposure time. The first exposure time begins not before and ends not later than the second exposure time.

Description

IMAGE SENSOR ASSEMBLY WITH HIGH-SENSITIVE PIXEL ELEMENTAND LOW-SENSITIVE PIXEL ELEMENTThe present disclosure relates to an image sensor assembly having pixel elements with high-sensitive pixel elements and low-sensitive pixel elements.BACKGROUNDAn image sensor assembly for a solid-state imaging device includes photoelectric conversion elements that generate photocurrents proportional to the intensity of incident radiation. Active pixel circuits convert the photocurrents to analog pixel data signals, wherein within a sensitivity range of the active pixel circuit, a voltage of the analog pixel data signal is a monotonically changing function of the photocurrent. In row readout periods the pixel data signals and pixel noise signals of active pixel circuits belonging to a same pixel column are sequentially transmitted to a column signal processing unit via data signal lines. Color pixels include a pixel circuit and a color fdter element in the path of the incident radiation. Different color pixels are sensitive to different radiation wavelength ranges and deliver wavelength dependent image information, e.g., a color image and / or information about radiation outside the visible light range only. Typically, an image sensor assembly includes an array of identical macro pixels, wherein the macro pixel includes a set of color pixels for at least two different radiation wavelength ranges.SUMMARYSince the color fdter elements attenuate the total intensity of the radiation incident on the color fdter element to a different degree and the conversion efficiency of a photoelectric conversion element depends on the wavelength content of the radiation incident on the photoelectric conversion element, the responsivities of the color pixels can differ significantly from each other. Under bright light conditions, at least one of the color pixels of a macro pixel may go into saturation while the other color pixels operate in a suitable, e.g., linear range. Under low light conditions, at least one of the color pixels of a macro pixel may provide only a weak and noisy output signal while other color pixels operate in a suitable, e.g., linear range.The present disclosure mitigates such deficiencies of the prior art. In particular, the present disclosure relates to an image sensor assembly that provides different exposure times for color pixels having different sensitivities.Accordingly, an image sensor assembly includes a pixel row including a high-sensitive first pixel element and a low-sensitive second pixel element, The first pixel element is configured to convert incident radiation received during a first exposure time into a pixel voltage. The second pixel element is configured to convert incident radiation received during a second exposure time into a pixel voltage. The first exposure time is shorter than the second exposure time, wherein the first exposure time begins not before and ends not later than the second exposure time.The pixel elements may be color pixels. The different exposure times can compensate to some extent for the difference in sensitivity between the first pixel element and the second pixel element, so that under the same lighting conditions, both pixel elements operate within a suitable range despite the difference in sensitivity. The low-sensitivity pixel element can be exposed for long enough to detect pulsed light sources without causing the high-sensitivity pixel elements to saturate.BRIEF DESCRIPTION OF THE DRAWINGSA more complete understanding of the disclosure and many of the advantages associated therewith will be obtained by reference to the following detailed description in conjunction with the accompanying drawings, in which:FIG. l is a schematic block diagram illustrating an imaging apparatus as an example for an electronic device including an image sensor assembly with high-sensitive pixel elements and low-sensitive pixel elements, in accordance with the embodiments.FIG. 2 is a simplified block diagram illustrating a configuration example of a solid-state imaging device that includes an image sensor assembly with high-sensitive pixel elements and low-sensitive pixel elements, in accordance with an embodiment.FIG. 3 are schematic perspective views illustrating an embodiment in which a solid-state imaging device has a two-layer structure in a stacked CIS configuration.FIG. 4 is a simplified plan view of a configuration example of a pixel array of an image sensor assembly with first exposure control lines controlling high-sensitive pixel elements and with second exposure control lines controlling low-sensitive pixel elements, in accordance with an embodiment.FIG. 5 is a simplified cross-sectional view of the configuration example of a pixel array as illustrated in FIG. 4 in accordance with an embodiment.FIG. 6 is a simplified plan view of a configuration example of a pixel array of an image sensor assembly according to an embodiment with pixel elements having color filter elements with high transmittance for infrared radiation.FIG. 7A is a simplified circuit diagram of a configuration example with a high-sensitive pixel element and low-sensitive pixel element arranged in the same pixel row in accordance with an embodiment based on pixel circuits with three transistors.FIG. 7B is a simplified time chart for control signals for the pixel circuits of the high-sensitive pixel element and the low-sensitive pixel element of FIG. 7A in accordance with an embodiment.FIG. 8A is a simplified circuit diagram of a configuration example with a high-sensitive pixel element and low-sensitive pixel element arranged in the same pixel row in accordance with an embodiment based on pixel circuits with four transistors and common reset line.FIG. 8B is a simplified time chart for control signals for the pixel circuits of the high-sensitive pixel element and the low-sensitive pixel element of FIG. 8A in accordance with an embodiment.FIG. 9A is a simplified circuit diagram of a configuration example with a high-sensitive pixel element and low-sensitive pixel element arranged in the same pixel row in accordance with an embodiment based on pixel circuits with four transistors and separated reset lines.FIG. 9B is a simplified time chart for control signals for the pixel circuits of the high-sensitive pixel element and the low-sensitive pixel element of FIG. 9A in accordance with an embodiment.FIG. 10 is a simplified time chart for illustrating a useful effect of the configuration examples with respect to the detection of pulsed light in accordance with an embodiment.FIG. 11 is a block diagram depicting an example of a schematic configuration of a vehicle control system, in accordance with embodiments of the present disclosureFIG. 12 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section of the vehicle control system of FIG. 11.DETAILED DESCRIPTIONEmbodiments for implementing techniques of the present disclosure will be described below in detail using the drawings. The techniques of the present disclosure are not limited to the described embodiments, and various numerical values and the like in the embodiments are illustrative only. The same elements and elements with the same functions are denoted by the same reference signs. Duplicate descriptions are omitted.Connected electronic elements may be directly electrically connected through a direct and permanent low- resistive connection, e.g., through a conductive line. The terms “connected”, “electrically connected” and “signal-connected” may also include a connection through other electronic elements provided and suitable for permanent and / or temporary signal transmission and / or transmission of energy. For example, electronic elements may be electrically connected or signal-connected through resistors, capacitors, and electronic switches such as transistors or transistor circuits, e.g., field effect transistors (FETs), transmission gates, complementary switches, an FET and a dummy switch electrically connected in series, and others.The load path of a transistor is the controlled current path through a transistor. For example, a voltage applied to the gate of a FET controls the current flow through the load path (controlled path) between sourceand drain of the FET by field effect. When it is described that a transistor is connected in series with another element or is connected in parallel with another element, this connection refers to the load path of the transistor.A digital signal alternates between at least one active level and at least one passive level. A digital signal having an active level is active. A digital signal having an inactive level is inactive. The active level can be a digital high level or a digital low level. The inactive level can be a digital low level or a digital high level.In FIG. 1, an imaging apparatus 1 includes an optical system 91, a solid-state imaging device 90, a storage unit 92, and a control unit 93. The optical system 91 includes one or more lenses and various mechanisms such as an autofocus mechanism and a diaphragm mechanism, and guides light from an object to a light receiving surface of the solid-state imaging device 90.The solid-state imaging device 90 includes an image sensor assembly having a plurality of pixel circuits. Each pixel circuit converts incident radiation into electric signals by photoelectric conversion, and outputs analog pixel signals with a voltage monotonically decreasing or increasing with increasing intensity of the incident radiation. The solid-state imaging device 90 converts the analog pixel signals into digital pixel values and further includes a signal processing unit that performs predetermined signal processing on the digital pixel values to obtain image data.The storage unit 92 stores the image data, e.g., frames output from the solid-state imaging device 90 in a storage medium. The storage medium may include a volatile storage medium and / or non-volatile storage medium. The non-volatile storage medium may be or include a flash memory or a hard disk drive. The volatile storage medium may be or include a dynamic random access memory (DRAM).The control unit 93 controls the solid-state imaging device 90 such that the solid-state imaging device 90 performs an imaging operation. The imaging operation includes obtaining images from a scene and outputting image data including information about the images.FIG. 2 illustrates a configuration example of a solid-state imaging device 90 in accordance with embodiments of the present technology. The solid-state imaging device 90 includes a signal processing unit 80 and an image sensor assembly 70. The image sensor assembly 70 includes a pixel array 10, a column signal processing unit 20 that includes a plurality of column signal processing circuits 200, a row decoder / driver 30, a digital readout unit 40, and a sensor controller 50.In the pixel array 10, pixel elements 301, 302 are arranged matrix-like in columns and rows. A subset of pixel elements 301, 302 assigned to the same column form a pixel column 12. A subset of pixel elements 301, 302 assigned to the same row form a pixel row 11.Some of the pixel rows 11 or all pixel rows 11 include two or more types of pixel elements 301, 302 with different sensitivities. The illustrated image sensor assembly 70 shows first pixel elements 301 with highsensitivity and second pixel elements 302 with low sensitivity in each second pixel row 11 and exclusively first pixel elements 301 in the other pixel rows 11. Each first pixel element 301 includes a pixel circuit 100 and a first color filter element 311 in a path of radiation incident on the pixel circuit 100 of the first pixel element 301. Each second pixel element 302 includes a pixel circuit 100 and a second color filter element 312 in a path of radiation incident on the pixel circuit 100 of the second pixel element 301. The pixel circuits 100 of the first pixel elements 301 and the second pixel elements 302 can be identical and can have the same sensitivity to white light. The transparencies of the first color filter element 311 and the second color filter elements 312 differ from each other for at least a portion of the wavelength range in which the pixel circuits 100 are sensitive to radiation.Three first pixel elements 301 and one second pixel element 302 formed in two neighboring pixel rows 11 and two neighboring pixel columns 12 form a macro pixel 15. The pixel array 10 is formed by regularly arranged macro pixels 15. The first pixel elements 301 may have the same sensitivity or different sensitivities, wherein each type of first pixel elements 301 has a higher sensitivity than the second pixel element 302 in a predetermined wavelength range, e.g., in the visible light wavelength range.For each pixel row 11, each first pixel element 301 converts incident radiation received during a first exposure time into a pixel voltage, and each second pixel element 302 converts incident radiation received during a second exposure time into a pixel voltage. The first exposure time is shorter than the second exposure time, wherein the first exposure time begins not before and ends not later than the second exposure time. In other words, within the same pixel row 11 the first exposure time is completely within the second exposure time. The first pixel elements 301 and the second pixel elements 302 in the same pixel row 11 are read out within the same frame.The pixel circuits 100 may be any active pixel sensors (APC) for intensity readout with one or two photoelectric conversion elements 101 and three, four or more FETs. The pixel circuits 100 convert incident radiation into a pixel voltage that is a monotonically increasing or decreasing function of the intensity of incident radiation detected by the pixel circuit 100 in an exposure time. Each pixel circuit 100 outputs an analog pixel signal controlled by the pixel voltage to a data signal line 19 when it is selected in a row readout period. The analog pixel signal is a pixel data signal or a pixel noise signal.The row decoder / driver 30 controls the pixel circuits 100 by generating pixel control signals for operating and selecting groups of pixel circuits 100. The pixel control signals control reset, exposure time, internal temporal storage of the illumination information, and readout of the pixel circuits 100.For each pixel row 11, the row decoder / driver 30 may control begin or end of the first exposure time of all first pixel elements 301 in the pixel row 11 through a first exposure control signal transmitted via a first exposure control line 141 and may control begin or end of the second exposure time of all second pixel elements 302 in the pixel row 11 through a second exposure control signals 142 transmitted via a second exposure control line 142. In addition, the row decoder / driver 30 may exert further, common control of allfirst pixel elements 301 and all second pixel elements 302 of the pixel row 11 through further control signals transmitted through one or more further control lines 145.In more general terms, the row decoder / driver 30 controls all pixel circuits 100 of a selected group of pixel circuits 100 synchronously. The selected group of pixel circuits 100 may include some pixel circuits 100 of one pixel row 11, all pixel circuits 100 of one pixel row 11, or some or all pixel circuits 100 of more than one pixel row 11. The following part of the description refers to “pixel rows” as examples for “groups of pixel circuits” for simplicity. The row decoder / driver 30 outputs the control signals for operating the FETs of the pixel circuits 100 on the first exposure control lines 141, the second exposure control lines 142, and the further control line(s) 145 according to driver timing signals supplied from the sensor controller 50.The pixel circuits 100 of a pixel output group sequentially pass information about the pixel voltage that depends on an illumination intensity detected by the pixel circuits 100 in an exposure time to at least one data signal line (vertical signal line) 19. Each pixel output group may include some pixel circuits 100 of one pixel column 12, all pixel circuits 100 of one pixel column 12, or some or all pixel circuits 100 of more than one pixel column 12. The following part of the description refers to “pixel columns” as examples for “pixel output groups” for simplicity.Each pixel circuit 100 includes an amplifier transistor. When the pixel row 11 of a pixel circuit 100 is selected, the amplifier transistor is in a source follower configuration with a current source circuit 210 in the column signal processing circuit 200. A load path of the amplifier transistor 102 is electrically connected between a pixel supply voltage VDDH and the data signal line 19. Each data signal line 19 sequentially conveys analog pixel noise signals and analog pixel data signals from the pixel circuits 100 of one of the pixel columns to the column signal processing circuit 200.The column signal processing circuit 200 includes the current source circuit 210 forming the load of the amplifier transistor of the selected pixel circuit 100, an analog -to-digital converter 240 converting the analog pixel signals into digital pixel values and a digital circuit 290 preprocessing the digital pixel values. The current source circuit 210 supplies a constant current to the data signal line 19. The analog -to-digital converter 240 converts the analog pixel data signals into digital pixel data values and the analog pixel noise signals into digital pixel noise values.The digital circuit 290 may temporarily store the pixel data values in a data phase memory and the pixel noise values obtained in the same row readout period in a reset phase memory.The digital readout unit 40 may include an arithmetic logic unit (ALU) that receives and preprocesses the stored pixel data value and the stored pixel noise value. The ALU may calculate a corrected pixel value from the pixel noise value obtained from the pixel circuit 100 in the reset phase of a row readout period and from the pixel data value obtained from the same pixel circuit 100 in the data phase of the same row readout period, wherein the data phase may follow or precede the reset phase. For example, the ALU may performDCDS (digital correlated double sampling) by subtracting the pixel noise value from the pixel data value obtained from the same pixel circuit 100 in the same row readout period.The sensor controller 50 generates the driver timing signals and outputs the driver timing signals to the row decoder / driver 30. The sensor controller 50 generates readout control signals for controlling the column signal processing unit 20 through readout control lines 16. The readout control signals may control the analog -to-digital conversion of the analog pixel signals.FIG. 3 is a diagram illustrating an example in which the solid-state imaging device 90 of FIG. 2 is formed by a stacked CMOS image sensor (CIS) having a two-layer structure with a radiation receiving chip 910 and a processing chip 920. The radiation receiving chip 910 includes at least the photoelectric conversion elements. For example, the radiation receiving chip 910 may include only the photoelectric conversion elements, or parts of the pixel circuits including the photoelectric conversion element and one or more transistors, or the complete pixel circuits, or the complete pixel circuits and elements of the column signal processing circuits 200. As illustrated on the right-hand side of FIG. 3, the solid-state imaging device 90 is formed as one sensor by bonding the radiation receiving chip 910 and the processing chip 920 while electrically bringing contact pads on the radiation receiving chip 910 in contact with corresponding contact pads on the processing chip 920.FIG. 4 shows an image sensor assembly 70 that includes a pixel array 10 in which pixel elements 301, 302 are arranged in a matrix-like manner in columns and rows. A subset of pixel elements 301, 302 associated with the same column form a pixel column 12. A subset of pixel elements 301, 302 associated with the same row form a pixel row 11. The pixel elements 301 , 302 of the same pixel row 11 simultaneously receive the same control signals transmitted via control lines 141, 142, 145. The pixel elements 301, 302 of the same pixel column 11 successively output analog output signals to a common data signal line 19.The image sensor assembly 70 includes at least one pixel row 11 that includes at least one high-sensitive first pixel element 301 and at least one low-sensitive second pixel element 302.The high-sensitive first pixel element 301 has a higher responsivity to the same amount of broadband radiation incident on a unit area than the low-sensitive second pixel element, wherein the broadband radiation includes at least a portion of the visible spectrum.The illustrated image sensor assembly 70 shows pixel rows 11 with as many first pixel elements 301 as second pixel elements 302. In other embodiments, the number of second pixel elements 302 may be larger or smaller than the number of first pixel elements 301. Instead of two types of pixel elements with different sensitivities, the pixel rows 11 may include other types of pixel elements with different sensitivities than those of the first pixel elements 301 and the second pixel elements 302.The illustrated image sensor assembly 70 shows pixel rows 11 with only first pixel elements 301 in addition to pixel rows 11 with first pixel elements 301 and the second pixel elements 302. In other embodiments,the image sensor assembly 70 may include only pixel rows 11 with first pixel elements 301 and with second pixel elements 302, or pixel rows 11 with pixel elements different from the first pixel elements 301 and the second pixel elements 302.The first pixel element 301 is configured to convert incident radiation received during a first exposure time into a pixel voltage. The second pixel element 302 is configured to convert incident radiation received during a second exposure time into a pixel voltage. The first exposure time is shorter than the second exposure time, wherein the first exposure time begins not before and ends not later than the second exposure time.The longer second exposure time compensates for the lower sensitivity of the second pixel elements 302. Both the first and the second pixel elements 301, 302 can be operated in a suitable operating range without the first pixel elements 301 going into saturation and without the second pixel elements 302 providing only a weak pixel signal.The second exposure time may be selected to reliably detect a pulsed light source expected to be present in the imaged scene. In particular, the second exposure time can be set longer than the blanking time of the pulsed light source.The second exposure time completely overlaps the first exposure time. Provided that the second exposure time is sufficiently shorter than an image readout period, using the different exposure times has no effect on the frame rate at which the image sensor assembly 70 captures images.The image sensor assembly 70 further includes a first exposure control line 141 configured to transmit a first exposure control signal to the first pixel element 301 to control begin and / or end of the first exposure period, and a second exposure control line 142 configured to transmit a second exposure control signal to the second pixel element 302 to control begin and / or end of the second exposure period.Each of the pixel elements 301, 302 includes one or two photoelectric conversion and three, four or more FETs. At least two of the FETs are controlled via control signals, wherein each control signal is simultaneously applied to all pixel elements 301, 302 of the same type in the same pixel row 11. The control signals control reset of one or more network nodes of the pixel element 301, 302to a reset voltage, control an internal charge transfer within the pixel element 301, 302, switch the sensitivity of the pixel element 301, 302, or control output of the pixel voltage to a pixel-internal memory circuit and / or to the data signal line 19. One, two, or more of the control signals define start and / or end of the exposure time of the pixel element 301, 302. One control line for transmitting one of the controls signals defining start and / or end of the exposure time to the pixel elements 301, 302 is multiplied, e.g., doubled for such pixel rows 11 that include both first pixel elements 301 and second pixel elements 302 to obtain the first exposure control line 141 connected only to the first pixel elements 301 and the second exposure control line 142 connected only to the second pixel elements 302. The first exposure control signal is selectively transmitted to the firstpixel elements 301 and the second exposure control signal is selectively transmitted to the second pixel elements 301.The first pixel element 301 is configured to start or terminate the first exposure time in response to a change of the first exposure control signal between an active voltage level and an inactive voltage level. The second pixel element 302 is configured to start or terminate the second exposure time in response to a change of the second exposure control signal between an active voltage level and an inactive voltage level.The change of the first and second exposure control signals can be the change from the active voltage level to the inactive voltage level or the change from the inactive voltage level to the active voltage level.Each of the first pixel element 301 and the second pixel element 302 includes a photoelectric conversion element 101 including a detector cathode. The photoelectric conversion element 101 is configured to generate a voltage at the detector cathode in response to incident radiation.The photoelectric conversion element 101 is integral part of each pixel circuit 100 and photoelectrically converts incident electromagnetic radiation into electric charges. The amount of electric charge generated in the photoelectric conversion element 101 is a function of the intensity of the incident electromagnetic radiation. The photoelectric conversion element 101 may include or consist of a photodiode which converts electromagnetic radiation incident on a detection surface into a photocurrent by means of the photoelectric effect. The electromagnetic radiation may include visible light, infrared radiation and / or ultraviolet radiation. The amplitude of the photocurrent corresponds to the intensity of the incident electromagnetic radiation, wherein in the intensity range of interest the photocurrent increases at least approximately linearly with increasing intensity of the detected electromagnetic radiation. The photocurrent changes the voltage at the detector cathode. For example, for a pinned photodiode the detector cathode can be depleted to a positive reset voltage and the photocurrent gradually decreases the voltage at the detector cathode.The photoelectric conversion element 101 of the first pixel element 301 and the photoelectric conversion element 101 of the second pixel element 302 can have a same sensitivity to white light.White light contains all wavelengths of the visible spectrum in equal intensity. The pixel circuits 100 of the first pixel elements 301 and the second pixel elements 302 have the same sensitivity with respect to white light impinging directly on the detector surfaces of the photoelectric conversion elements 101.Radiation sensitive areas of the first pixel elements 301 and radiation sensitive areas of the second pixel elements 202 can have a same size.FIG. 5 shows a vertical cross-section through an image sensor assembly 70 including a radiation receiving chip 910 and a processing chip 920 as described with reference to FIG. 3. The processing chip 920 is formed opposite to a radiation receiving side of the radiation receiving chip 910 and includes the column signalprocessing unit 20, the row decoder / driver 30, the digital readout unit 40, and the sensor controller 50 of FIG. 2. The pixel array 10 of FIG. 4 is formed in the radiation receiving chip 910.The radiation receiving chip 910 includes a contiguous p doped base layer 352 and laterally separated n doped cathode regions 351 embedded in the p doped base layer 352. Each n doped cathode region 351 forms the detector cathode of a photoelectric conversion element 101. The further components of the pixel circuits 100 are not illustrated. Apart from manufacturing tolerances, the photoelectric conversion elements 101 are identical. Each photoelectric conversion element 101 is associated to one of the pixel elements 301, 302. Each pixel element 301, 302 may include one, two or more photoelectric conversion elements 101.The image sensor assembly 70 further includes a micro lens array 310 formed at a radiation receiving side of the radiation receiving chip 910. The micro lens array 310 may include color fdter elements 311, 312, wherein each color filter element 311, 312 is associated to a pixel element 301, 302. Alternatively, the lens and filter functionalities are separated in a clear micro lens array and a color filter layer including color filter elements 311, 312 with planar surfaces.Each first pixel element 301 includes a first color filter element 311 in a path of radiation incident on the photoelectric conversion element 101 of the first pixel element 301. Each second pixel element 302 includes a second color filter element 312 in a path of radiation incident on the photoelectric conversion element 101 of the second pixel element 302. A filter characteristic of the first color filter element 311 is different from a filter characteristic of the second color filter element 312.The transparencies of the first color filter element 311 and the second color filter elements 312 differ from each other for at least a portion of the wavelength range in which the pixel circuits 100 are sensitive to radiation.For example, for at least an inspection portion of a wavelength range for visible light, a transparency of the first color filter element 311 is higher than the transparency of the second color filter element 312.The inspection portion may include a color-specific wavelength portion, for example the red light wavelength range from 620 nm to 750 nm, the green light wavelength range from 500 nm to 570 nm, the blue light wavelength range from 450 nm to 495 nm, or the yellow light wavelength range from 570 nm to 580 nm. According to another example, the inspection portion includes the whole visible light wavelength range from 380 nm to 700 nm, wherein across the whole visible light wavelength range the transparency of the first color filter element 301 can be higher than the transparency of the second color filter element 302.FIG. 6 shows an example with four different types of pixel elements 301, 302, 303, 304 based on a micro lens array 310 with four different types of color filter elements 311, 312, 313, 314, wherein first pixel elements 301 include first color filter elements 311, second pixel elements 302 include second color filter elements 312, third pixel elements 303 include third color filter elements 313, and fourth pixel elements 304 include fourth color filter elements 314.The first color filter elements 311 have a maximum transparency in the green light wavelength range. The third color filter elements 313 have a maximum transparency in the red light wavelength range. The fourth color filter elements 314 have a maximum transparency in the blue light wavelength range. The second color filter elements 312 have lower transparency in the green light wavelength range than the first color filter elements 311, lower transparency in the red light wavelength range than the third color filter elements 313 and lower transparency in the blue light wavelength range than the fourth color filter elements 314.Each odd pixel row 11 includes first, third, and fourth pixel elements 301, 303, 304. Each even pixel row 11 includes first and second pixel elements 301, 302. The pixel array 10 includes a repetitive pattern of identical macro pixels 15, wherein each macro pixel 15 includes a third pixel element 303, a first pixel element 301, a fourth pixel element 304 and another first pixel element 301 in this order in the same pixel row 11 in four neighboring pixel columns 12, and a first pixel element 301, a second pixel element 302, another first pixel element 301 and another second pixel element 302 in this order in a neighboring pixel row 11 in the same pixel columns 12.The second exposure time can be at least 11 ms and the first exposure time can be shorter than half of the second exposure time, e.g., less than 2 ms.Nowadays, artificial light sources often do not emit their light continuously, but instead blank out the light for such short periods of time that the human eye still perceives the emitted light as continuous light. Examples of artificial light sources emitting pulsed light include light-emitting diode (LED) traffic signs, LED brake lights and vehicle headlights. The pulsed emitted by such light sources rapidly changes between on periods in which light is emitted and off periods in which light is not emitted. The frequency of the light pulses is usually about 90 Hz, which is fast enough for the human eye not to perceive the blanking periods when the light source is off. When in bright scenery an image sensor assembly operates with short exposure times of less than 10 ms, the pulsed light may cause various artifacts in images captured by image sensor assembly 70. For example, the pulsed light may appear to be on in one frame and off in the next frame. Flickering artifacts may misguide machine vision systems.By using for the second pixel elements 302 an exposure time of at least 11 ms, the second pixel elements 302 always detect a portion of the on periods of a pulsed light source with a frequency of 90 Hz. For the second pixel elements 302 the pulsed light source appears to be always on. The first exposure time can be selected completely independent from the second exposure time and can be adapted to the illumination conditions. For example, in bright scenes (or bright portions of a scene), the first exposure time can be selected short enough to avoid saturation of the pixel circuits of the first pixel elements 301. The information about the “on” but pulsed light obtained from the second pixel elements 302 can be used to correct the image information delivered from the first pixel elements 301. Where in consecutive frames the first, third, and / or fourth pixel elements 301 indicate a flickering light and the second pixel elements 302 do not, a digital readout unit or a signal processing unit can overwrite the information obtained from the first, third, and / or fourth pixel elements 301, wherein in frames in which the first, third, and / or fourth pixelelements 301 indicate an off period of a light source the digital pixel value is replaced with a digital pixel value obtained for the same light source from a frame in which the light source is on.The second color fdter elements 312 may show a higher transparency for infrared radiation than the other color fdter elements 312 and lower transparency for visible light than the other color fdter elements 312. For example, the image sensor assembly may be used as sensor in structured light application.FIG. 7A, FIG. 8 A and FIG. 9A show first and second pixel elements 301, 302 for which the second exposure time TINT2 begins before the first exposure time TINT1, and the first exposure time TINT1 and the second exposure time TINT2 end simultaneously. By terminating the first and second exposure times TINT1, TINT2 simultaneously, the pixel readout sequence needs only marginal changes with respect to proven and tested readout schemes.FIG. 7A shows a first pixel element 301 and a second pixel element 302 that include three transistor (3T) pixel circuits 100. Each of FIG. 8 A and FIG. 9A shows a first pixel element 301 and a second pixel element 302 that include four transistor (4T) pixel circuits 100. Both in FIG. 7A, in FIG. 8 A and in FIG. 9A, the first pixel element 301 and the second pixel element 302 are arranged in the same pixel row 11 and include identical pixel circuits 100.The pixel circuit 100 includes a photoelectric conversion element 101 that photoelectrically converts incident electromagnetic radiation into electric charges. The amount of electric charge generated in the photoelectric conversion element 101 corresponds to the intensity of the incident electromagnetic radiation. The photoelectric conversion element 101 may include or consist of a photodiode which converts electromagnetic radiation incident on a detection surface of the photodiode into a photocurrent by means of the photoelectric effect. An anode of the photodiode is connected to a negative pixel supply voltage VSSH. The electromagnetic radiation may include visible light, infrared radiation and / or ultraviolet radiation. The amplitude of the photocurrent corresponds to the intensity of the incident electromagnetic radiation, wherein in the intensity range of interest the photocurrent increases approximately linearly with increasing intensity of the detected electromagnetic radiation.The first pixel element 301 includes a first color filter element 311 between the incident radiation 400 and the detector surface of the photoelectric conversion element 101 of the first pixel element 301. The second pixel element 302 includes a second color filter element 311 between the incident radiation 400 and the detector surface of the photoelectric conversion element lOlof the second pixel element 302.The photocurrent of the photoelectric conversion element 101 discharges a positively pre-charged floating diffusion FD so that in an integration period a floating diffusion voltage across the floating diffusion FD is a function of the photocurrent integrated over time, and, in the result, a function of the brightness (illumination intensity) sampled by the pixel circuit 100 in the integration period.An amplifier transistor 102 is in a source follower configuration with the controlled load path electrically connected between a positive pixel supply potential VDDH and a data signal line 191, 192. The floating diffusion FD is connected to the gate of the amplifier transistor 102. A potential at the gate of the amplifier transistor 102 is equal to the floating diffusion voltage. The floating diffusion FD functions as the input node of the amplifier transistor 102.The first pixel element 301 is configured to output the pixel voltage of the first pixel element 301 to a first data signal line 191 in response to a change of a row select signal SEL transmitted on a row select line 143 to an active voltage level. The second pixel element 302 is configured to output the pixel voltage of the second pixel element 302 to a second data signal line 192 in response to the change of the row select signal SEL.The first pixel element 301 includes a selection transistor 109 configured to pass the pixel voltage of the first pixel element 301 to the first data signal line 191. The second pixel element 302 includes a selection transistor 109 configured to pass the pixel voltage of the second pixel element 302 to the second data signal line 192.The selection transistor 109 controls a sequential readout of all pixel circuits 100 connected to the same data signal line 19, 191, 192. Load paths of the amplifier transistor 102 and the select transistor 109 are electrically connected in series between the positive pixel supply voltage VDDH and the data signal line 19, 191, 192. The select transistor 109 electrically couples the amplifier transistor 102 to the data signal line 19, 191, 192. In particular, the select transistor 109 connects the controlled load path between source and drain of the amplifier transistor 102 to the data signal line 19, 191, 192 when the pixel circuit 100 is selected and disconnects the amplifier transistor 102 from the data signal line 19, 191, 192 when the pixel circuit 100 is not selected.The row select signal SEL for selecting a specific pixel row 11 is supplied to the gate of the select transistor 109 through the row select line 143. The row select signal SEL changes between an active signal level (“active select signal”) and an inactive signal level (“active select signal”). In the illustrated embodiment, the active signal level is the high level.The first pixel element 301 and the second pixel element 302 are configured to terminate the first and second exposure times TINT1, TINT2 in response to a change of the row select signal SEL to the active voltage level or in response to a change of another control signal when the row select signal SEL is active.FIG. 7A and FIG. 7B refer to an image sensor assembly 70 with the first pixel element 301 including a reset transistor 104 configured to pin the detector cathode of the first pixel element 301 to a reset voltage VRST in response to a first reset signal RST1 changing to an active voltage level, and with the first exposure time TINT1 starting with the reset transistor 104 of the first pixel element 301 turning off in response to the first reset signal RST1 changing to an inactive voltage level. The second pixel element 302 includes a reset transistor 104 configured to pin the detector cathode of the second pixel element 302 to a reset voltageVRST in response to a second reset signal RST2 changing to an active voltage level. The second exposure time TINT2 starts with the second reset transistor 104 of the second pixel element 302 turning off in response to the second reset signal RST2 changing to an inactive voltage level.The first reset signal RST1 is transmitted through a first exposure control line 141.The second reset signal RST2 is transmitted through a second exposure control line 142. When the detector cathode is pinned to the reset voltage VRST, the floating diffusion voltage is a function of a pixel dark current.FIG. 7B shows the second reset signal RST2 becoming active at t=t 11 and becoming inactive at t=t 12. The first reset signal RST1 becomes active at t=t21 and becomes inactive at t=t22. The row select signal SEL becomes active at t=t31 and becomes inactive at t=t32. Both the first reset signal RST1 and the second reset signal RST2 become active at t=t41 and inactive at t=t42. The first exposure time (first integration time) TINT1 begins a t=t22. The second exposure time (second integration time) TINT2 begins a t=t 12. The first and second exposure times TINT1, TINT2 simultaneously end at or slightly after t=t31.The first pixel element 301 and the second pixel element 302 of FIG. 7A terminate the first and second exposure times TINT1, TINT2 in response to a change of the row select signal SEL to the active voltage level.In the following figures, the first pixel element 301 and the second pixel element 302 are configured to terminate the first and second exposure times TINT1, TINT2 in response to a change of another control signal when the row select signal SEL is active.Each of FIG. 8 A and FIG. 9A refers to an image sensor assembly with the first pixel element 301 including a transfer transistor 103 configured to connect the detector cathode of the first pixel element 301 to a floating diffusion FD in response to a first transfer signal TGI changing to an active voltage level. The first exposure time TINT1 starts with the transfer transistor 103 of the first pixel element 301 turning off in response to the first transfer signal TGI changing to an inactive voltage level. The second pixel element 302 includes a transfer transistor 103 configured to connect the detector cathode of the second pixel element 302 to a floating diffusion FD in response to a second transfer signal TG2 changing to an active voltage level, wherein the second exposure time TINT2 starts with the transfer transistor 103 of the second pixel element 302 turning off in response to the second transfer signal TG2 changing to an inactive voltage level.In each pixel element 301, 302, a load path of the transfer transistor 103 is electrically connected between a cathode of the photoelectric conversion element 101 and the floating diffusion FD. The transfer transistor 103 serves as transfer element for transferring charge from the photoelectric conversion element 101 to the floating diffusion FD in a transfer period when the reset transistor 104 is off. The floating diffusion FD serves as temporary local charge storage. The transfer transistor 103 serves as transfer element for precharging the detector cathode of the photoelectric conversion element 101 according to the reset voltage VRST in a reset period when the reset transistor 104 is on.A first transfer signal TGI is supplied to the gate (transfer gate) of the transfer transistor 103 of the first pixel element 301 through a first exposure control line 141. A second transfer signal TG2 is supplied to the gate (transfer gate) of the transfer transistor 103 of the second pixel element 302 through a second exposure control line 142. The first and second transfer signals TGI, TG2 change between an active signal level (“active transfer signal”) and an inactive signal level (“inactive transfer signal”). In response to an active transfer signal, the transfer transistor 103 of a pixel element 301, 302 transfers electrons photoelectrically converted by the photoelectric conversion element 101 to the floating diffusion FD in the transfer periods. In the illustrated embodiment, the active signal level is the high level.In FIG. 8A, one single reset signal line 148 transfers a reset signal RST to the reset transistors 104 of the first pixel element 301 and the second pixel element 302.FIG. 8B shows the second transfer signal TG2 and the reset signal RST becoming active at t=tl 1 and becoming inactive at t=t 12. The first transfer signal TGI and the reset signal RST becomes active at t=t21 and becomes inactive at t=t22. The reset signal RST becomes a second time active between t=t3 and t=t4 for reading out the dark pixel. The row select signal SEL is active between t=t4 and t=t7. Both the first transfer signal TGI and the second transfer signal TG2 become active between t=t5 and t=t6, when the row select signal SEL is active. The first exposure time (first integration time) TINT1 begins at=t22. The second exposure time (second integration time) TINT2 begins at=tl2. The first and second exposure times TINT1, TINT2 simultaneously end at or slightly after t=t5.The first pixel element 301 and the second pixel element 302 terminate the first and second exposure times TINT1, TINT2 in response to a change of the first and second transfer signals TGI, TG2 when the row select signal SEL is active.In FIG. 9A, the first pixel element 301 includes a reset transistor 104 configured to reset the floating diffusion FD of the first pixel element 301 when the transfer transistor 103 of the first pixel element 301 is on. The second pixel element 302 includes a reset transistor 104 configured to reset the floating diffusion FD of the second pixel element 302 when the transfer transistor 103 of the second pixel element 301 is on.A first reset signal line 148 transfers a first reset signal RST1 to the reset transistor 104 of the first pixel element 301. A second reset signal line 149 transfers a second reset signal RST2 to the reset transistor 104 of the second pixel element 302.FIG. 9B shows that the second reset signal RST2 becomes active at t=t 11 and inactive at t=t 12, while the first reset signal RST becomes active at t=t21 and inactive at t=t22. The first and the second reset signal RST1, RST2 become simultaneously active a second time active between t=t3 and t=t4 for reading out the dark pixel values.The upper half of FIG. 10 schematically shows the rolling exposure and readout cycle for a complete frame from row 1 to row n. The lower half shows the time-dependent intensity of pulsed light with a frequency of 90 Hz. By using for the second pixel elements 302 an exposure time TINT2 of at least 11 ms, for each row the second pixel elements 302 always detect a portion of the on periods of the pulsed light.Though the embodiments discussed in detail refer mainly to rolling shutter image sensor assemblies, other configuration examples can refer to global shutter image sensor assemblies.According to a further configuration example, an image sensor assembly may include a pixel row 11 that includes a high-sensitive first pixel element 301 and a low-sensitive second pixel element 302. A first exposure control line 141 is configured to transmit a first exposure control signal to the first pixel element 301. A second exposure control line 142 is configured to transmit a second exposure control signal to the second pixel element 302. The first pixel element 301 is configured to start or terminate the first exposure time in response to a change of the first exposure control signal between an active voltage level and an inactive voltage level. The second pixel element 302 is configured to start or terminate the second exposure time in response to a change of the second exposure control signal between an active voltage level and an inactive voltage level.FIG. 11 is a block diagram depicting an example of schematic configuration of a vehicle control system as an example of a system to which the technology according to an embodiment of the present disclosure can be applied.The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. In the example depicted in FIG. 11, the vehicle control system 12000 includes a driving system control unit 12010, a body system control unit 12020, an outside-vehicle information detecting unit 12030, an in-vehicle information detecting unit 12040, and an integrated control unit 12050. In addition, a microcomputer 12051, a sound / image output section 12052, and a vehiclemounted network interface 12053 are illustrated as a functional configuration of the integrated control unit 12050.The driving system control unit 12010 controls the operation of devices related to the driving system of the vehicle in accordance with various kinds of programs. For example, the driving system control unit 12010 functions as a control device for a driving force generating device for generating the driving force of the vehicle, such as an internal combustion engine, a driving motor, or the like, a driving force transmitting mechanism for transmitting the driving force to wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.The body system control unit 12020 controls the operation of various kinds of devices provided to a vehicle body in accordance with various kinds of programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various kinds of lamps such as a headlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as an alternative to a key or signals of various kinds of switches can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals, and controls a door lock device, the power window device, the lamps, or the like of the vehicle.The outside-vehicle information detecting unit 12030 detects information about the outside of the vehicle including the vehicle control system 12000. The outside-vehicle information detecting unit 12030 can be connected with an imaging section 12031. The outside-vehicle information detecting unit 12030 makes the imaging section 12031 imaging an image of the outside of the vehicle and receives the imaged image. Based on the received image, the outside-vehicle information detecting unit 12030 may perform processing of detecting an object such as a human, a vehicle, an obstacle, a sign, a character on a road surface, or the like, or processing of detecting a distance thereto.The imaging section 12031 may be or may include an image sensor assembly according to the embodiments of the present disclosure. The light received by the imaging section 12031 may contain visible light and / or invisible light such as infrared rays or the like.The in-vehicle information detecting unit 12040 detects information about the inside of the vehicle and may be or may include an image sensor assembly according to the embodiments of the present disclosure. The in-vehicle information detecting unit 12040 is, for example, connected with a driver state detecting section 12041 that detects the state of a driver. The driver state detecting section 12041, for example, includes a camera that includes the solid-stage imaging device and that is focused on the driver. Based on detection information input from the driver state detecting section 12041, the in-vehicle information detecting unit 12040 may calculate a degree of fatigue of the driver or a degree of concentration of the driver or may determine whether the driver is dozing.The microcomputer 12051 can calculate a control target value for the driving force generating device, the steering mechanism, or the braking device based on the information about the inside or outside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in- vehicle information detecting unit 12040 and output a control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control intended to implement functions of an advanced driver assistance system (ADAS) which functions include collision avoidance or shock mitigation for the vehicle, following driving based on a following distance, vehicle speed maintaining driving, a warning of collision of the vehicle, a warning of deviation of the vehicle from a lane, or the like.In addition, the microcomputer 12051 can perform cooperative control intended for automatic driving, which makes the vehicle to travel autonomously without depending on the operation of the driver, or the like, by controlling the driving force generating device, the steering mechanism, the braking device, or the like on the basis of the information about the outside or inside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040.In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle which information is obtained by the outsidevehicle information detecting unit 12030. For example, the microcomputer 12051 can perform cooperative control intended to prevent a glare by controlling the headlamp so as to change from a high beam to a low beam, for example, in accordance with the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detecting unit 12030.The sound / image output section 12052 transmits an output signal of at least one of a sound or an image to an output device capable of visually or audible notifying information to an occupant of the vehicle or the outside of the vehicle. In the example of FIG. 11, an audio speaker 12061, a display section 12062, and an instrument panel 12063 are illustrated as the output device. The display section 12062 may, for example, include at least one of an on-board display or a head-up display.FIG. 12 is a diagram depicting an example of the installation position of the imaging section 12031, wherein the imaging section 12031 may include imaging sections 12101, 12102, 12103, 12104, and 12105.The imaging sections 12101, 12102, 12103, 12104, and 12105 are, for example, disposed at positions on a front nose, side-view mirrors, a rear bumper, and a back door of the vehicle 12100 as well as a position on an upper portion of a windshield within the interior of the vehicle. The imaging section 12101 provided to the front nose and the imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle obtain mainly an image of the front of the vehicle 12100. The imaging sections 12102 and 12103 provided to the side view mirrors obtain mainly an image of the sides of the vehicle 12100. The imaging section 12104 provided to the rear bumper or the back door obtains mainly an image of the rear of the vehicle 12100. The imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle is used mainly to detect a preceding vehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, or the like.Incidentally, FIG. 12 depicts an example of photographing ranges of the imaging sections 12101 to 12104. An imaging range 12111 represents the imaging range of the imaging section 12101 provided to the front nose. Imaging ranges 12112 and 12113 respectively represent the imaging ranges of the imaging sections 12102 and 12103 provided to the side view mirrors. An imaging range 12114 represents the imaging range of the imaging section 12104 provided to the rear bumper or the back door. A bird's-eye image of the vehicle 12100 as viewed from above is obtained by superimposing image data imaged by the imaging sections 12101 to 12104, for example.At least one of the imaging sections 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 may be a stereo camera constituted of a plurality of imaging elements, imaging element having pixels for phase difference detection or may include a ToF module including an image sensor assembly according to the embodiments of the present disclosure.For example, the microcomputer 12051 can determine a distance to each three-dimensional object within the imaging ranges 12111 to 12114 and a temporal change in the distance (relative speed with respect to the vehicle 12100 on the basis of the distance information obtained from the imaging sections 12101 to 12104, and thereby extract, as a preceding vehicle, a nearest three-dimensional object in particular that is present on a traveling path of the vehicle 12100 and which travels in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, equal to or more than 0 km / hour). Further, the microcomputer 12051 can set a following distance to be maintained in front of a preceding vehicle in advance and perform automatic brake control (including following stop control), automatic acceleration control (including following start control), or the like. It is thus possible to perform cooperative control intended for automatic driving that makes the vehicle travel autonomously without depending on the operation of the driver or the like.For example, the microcomputer 12051 can classify three-dimensional object data on three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large-sized vehicle, a pedestrian, a utility pole, and other three-dimensional objects on the basis of the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic avoidance of an obstacle. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can recognize visually and obstacles that are difficult for the driver of the vehicle 12100 to recognize visually. Then, the microcomputer 12051 determines a collision risk indicating a risk of collision with each obstacle. In a situation in which the collision risk is equal to or higher than a set value and there is thus a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display section 12062 and performs forced deceleration or avoidance steering via the driving system control unit 12010. The microcomputer 12051 can thereby assist in driving to avoid collision.At least one of the imaging sections 12101 to 12104 may be an infrared camera that detects infrared rays . The microcomputer 12051 can, for example, recognize a pedestrian by determining whether there is a pedestrian in imaged images of the imaging sections 12101 to 12104. Such recognition of a pedestrian is, for example, performed by a procedure of extracting characteristic points in the imaged images of the imaging sections 12101 to 12104 as infrared cameras and a procedure of determining whether it is the pedestrian by performing pattern matching processing on a series of characteristic points representing the contour of the object. When the microcomputer 12051 determines that there is a pedestrian in the imaged images of the imaging sections 12101 to 12104, and thus recognizes the pedestrian, the sound / image output section 12052 controls the display section 12062 so that a square contour line for emphasis is displayed so as to be superimposed on the recognized pedestrian. The sound / image output section 12052 may also control the display section 12062 so that an icon or the like representing the pedestrian is displayed at a desired position.The example of the vehicle control system to which the technology according to an embodiment of the present disclosure is applicable has been described above. By applying an image sensor assembly accordingto the embodiments of the present disclosure, better sensitivity can be achieved for different pixels. Flickering traffic lights can be safely detected.Additionally, embodiments of the present technology are not limited to the above-described embodiments, but various changes can be made within the scope of the present technology without departing from the gist of the present technology.The image sensor assembly according to the present disclosure may be any device used for analyzing and / or processing radiation such as visible light, infrared light, ultraviolet light, and X-rays. For example, an image sensor assembly according to the embodiments may be any electronic device in the field of traffic, the field of home appliances, the field of medical and healthcare, the field of security, the field of beauty, the field of sports, the field of agriculture, the field of image reproduction or the like.Specifically, in the field of image reproduction, the image sensor assembly according to the embodiments may be a device for capturing an image to be provided for appreciation, such as a digital camera, a smart phone, or a mobile phone device having a camera function. In the field of traffic, for example, a solid-state imaging device including an image sensor assembly according to the embodiments may be integrated in an in-vehicle sensor that captures the front, rear, peripheries, an interior of the vehicle, etc. for safe driving such as automatic stop, recognition of a state of a driver, or the like, in a monitoring camera that monitors traveling vehicles and roads, or in a distance measuring sensor that measures a distance between vehicles or the like.In the field of home appliances, the image sensor assembly according to the embodiments may be integrated in any type of sensor that can be used in devices provided for home appliances such as TV receivers, refrigerators, and air conditioners to capture gestures of users and perform device operations according to the gestures. Accordingly, the image sensor assembly according to the embodiments may be integrated in home appliances such as TV receivers, refrigerators, and air conditioners and / or in devices controlling the home appliances. Furthermore, in the field of medical and healthcare, the image sensor assembly according to the embodiments may be integrated in any type of sensor, e.g., a solid-state image device, provided for use in medical and healthcare, such as an endoscope or a device that performs angiography by receiving infrared light.In the field of security, the image sensor assembly according to the embodiments can be integrated in a device provided for use in security, such as a monitoring camera for crime prevention or a camera for person authentication use. Furthermore, in the field of beauty, an image sensor assembly according to the embodiments can be used in a device provided for use in beauty, such as a skin measuring instrument that captures skin or a microscope that captures a probe. In the field of sports, an image sensor assembly according to the embodiments can be integrated in a device provided for use in sports, such as an action camera or a wearable camera for sport use or the like. Furthermore, in the field of agriculture, the image sensor assembly can be used in a device provided for use in agriculture, such as a camera for monitoring the condition of fields and crops.The present technology can also be configured as described below: [1] An image sensor assembly (70) including: a pixel row (11) comprising a high-sensitive first pixel element (301) and a low-sensitive second pixel element (302), wherein the first pixel element (301) is configured to convert incident radiation received during a first exposure time into a pixel voltage, wherein the second pixel element (302) is configured to convert incident radiation received during a second exposure time into a pixel voltage, wherein the first exposure time is shorter than the second exposure time, and wherein the first exposure time begins not before and ends not later than the second exposure time.[2] The image sensor assembly according to [1], further including: a first exposure control line (141) configured to transmit a first exposure control signal to the first pixel element (301) to control begin and / or end of the first exposure period; and a second exposure control line (142) configured to transmit a second exposure control signal to the second pixel element (302) to control begin and / or end of the second exposure period.[3] The image sensor assembly according to [2], wherein the first pixel element (301) is configured to start or terminate the first exposure time in response to a change of the first exposure control signal between an active voltage level and an inactive voltage level, and wherein the second pixel element (302) is configured to start or terminate the second exposure time in response to a change of the second exposure control signal between an active voltage level and an inactive voltage level.[4] The image sensor assembly according to any of [1] to [3], wherein each of the first pixel element (301) and the second pixel element (302) comprises a photoelectric conversion element (101) comprising a detector cathode, wherein the photoelectric conversion element (101) is configured to generate a voltage at the detector cathode in response to incident radiation.[5] The image sensor assembly according to [4], wherein the photoelectric conversion element (101) of the first pixel element (301) and the photoelectric conversion element (101) of the second pixel element (302) have a same sensitivity to white light.[6] The image sensor assembly according to any of [4] to [5], wherein each first pixel element (301) includes a first color filter element (311) in a path of radiation incident on the photoelectric conversion element (101) of the first pixel element (301), wherein each second pixel element (302) includes a second color filter element (312) in a path of radiation incident on the photoelectric conversion element (101) of the second pixel element (302), and wherein a filter characteristic of the first color filter element (311) is different from a filter characteristic of the second color filter element (312).[7] The image sensor assembly according to [6], wherein for at least an inspection portion of the wavelength range for visible light, the transparency of the first color filter element (311) is higher than the transparency of the second color filter element (312).[8] The image sensor assembly according to any of [1] to [7], wherein the second exposure time is at least 11 ms and the first exposure time is shorter than half of the second exposure time.[9] The image sensor assembly according to any of [1] to [8], wherein the second exposure time begins before the first exposure time, and wherein the first exposure time and the second exposure time end simultaneously.

[0010] The image sensor assembly according to any of [1] to [9], wherein the first pixel element (301) is configured to output the pixel voltage of the first pixel element (301) to a first data signal line (191) in response to a change of a row select signal transmitted on a row select line (143) to an active voltage level, and wherein the second pixel element (302) is configured to output the pixel voltage of the second pixel element (302) to a second data signal line (192) in response to the change of the row select signal.

[0011] The image sensor assembly according to

[0010] , wherein the first pixel element (301) comprises a selection transistor (109) configured to pass the pixel voltage of the first pixel element (301) to a first data signal line (191), and wherein the second pixel element (302) comprises a selection transistor (109) configured to pass the pixel voltage of the second pixel element (302) to a second data signal line (192).

[0012] The image sensor assembly according to any of

[0010] and

[0011] , wherein the first pixel element (301) and the second pixel element (302) are configured to terminate the first and second exposure times in response to a change of the row select signal to the active voltage level or in response to a change of another control signal when the row select signal is active.

[0013] The image sensor assembly according to any of

[0010] to

[0012] , wherein the first pixel element (301) comprises a reset transistor (104) configured to pin the detector cathode of the first pixel element (301) to a reset voltage in response to a first reset signal changing to an active voltage level, and wherein the first exposure time starts with the reset transistor (104) of the first pixel element (301) turning off in response to the first reset signal changing to an inactive voltage level, and wherein the second pixel element (302) comprises a reset transistor (104) configured to pin the detector cathode of the second pixel element (302) to a reset voltage in response to a second reset signal changing to an active voltage level, and wherein the second exposure time starts with the second reset transistor (104) of the second pixel element (302) turning off in response to the second reset signal changing to an inactive voltage level.

[0014] The image sensor assembly according to any of

[0010] to

[0012] , wherein the first pixel element (301) comprises a transfer transistor (103) configured to connect the detector cathode of the first pixel element (301) to a floating diffusion in response to a first transfer signal changing to an active voltage level, and wherein the first exposure time starts with the transfer transistor (103) of the first pixel element (301) turning off in response to the first transfer signal changing to an inactive voltage level, and wherein the second pixel element (302) comprises a transfer transistor (103) configured to connect the detector cathode of the second pixel element (302) to a floating diffusion in response to a second transfer signal changing to an active voltage level, and wherein the second exposure time starts with the transfer transistor (103) of thesecond pixel element (302) turning off in response to the second transfer signal changing to an inactive voltage level.

[0015] The image sensor assembly according to

[0014] , wherein the first pixel element (301) comprises a reset transistor (104) configured to reset the floating diffusion (FD) of the first pixel element (301) when the transfer transistor (103) of the first pixel element (301) is on, and wherein the second pixel element (302) comprises a reset transistor (104) configured to reset the floating diffusion (FD) of the second pixel element (302) when the transfer transistor (103) of the second pixel element (301) is on.

Claims

CLAIMS1. An image sensor assembly, comprising: a pixel row comprising a high-sensitive first pixel element and a low-sensitive second pixel element, wherein the first pixel element is configured to convert incident radiation received during a first exposure time into a pixel voltage, wherein the second pixel element is configured to convert incident radiation received during a second exposure time into a pixel voltage, wherein the first exposure time is shorter than the second exposure time, and wherein the first exposure time begins not before and ends not later than the second exposure time.

2. The image sensor assembly according to claim 1, further comprising: a first exposure control line configured to transmit a first exposure control signal to the first pixel element to control begin and / or end of the first exposure period; and a second exposure control line configured to transmit a second exposure control signal to the second pixel element to control begin and / or end of the second exposure period.

3. The image sensor assembly according to claim 2, wherein the first pixel element is configured to start or terminate the first exposure time in response to a change of the first exposure control signal between an active voltage level and an inactive voltage level, and wherein the second pixel element is configured to start or terminate the second exposure time in response to a change of the second exposure control signal between an active voltage level and an inactive voltage level.

4. The image sensor assembly according to claim 1, wherein each of the first pixel element and the second pixel element comprises a photoelectric conversion element comprising a detector cathode, wherein the photoelectric conversion element is configured to generate a voltage at the detector cathode in response to incident radiation.

5. The image sensor assembly according to claim 4, wherein the photoelectric conversion element of the first pixel element and the photoelectric conversion element of the second pixel element have a same sensitivity to white light.

6. The image sensor assembly according claim 4, wherein each first pixel element includes a first color filter element in a path of radiation incident on the photoelectric conversion element of the first pixel element, wherein each second pixel element includes a second color filter element in a path of radiation incident on the photoelectric conversion element of the second pixel element, andwherein a filter characteristic of the first color filter element is different from a filter characteristic of the second color filter element.

7. The image sensor assembly according claim 6, wherein for at least an inspection portion of the wavelength range for visible light, the transparency of the first color filter element is higher than the transparency of the second color filter element.

8. The image sensor assembly according to claim 1, wherein the second exposure time is at least 11 ms and the first exposure time is shorter than half of the second exposure time.

9. The image sensor assembly according to claim 1, wherein the second exposure time begins before the first exposure time, and wherein the first exposure time and the second exposure time end simultaneously.

10. The image sensor assembly according to claim 1, wherein the first pixel element is configured to output the pixel voltage of the first pixel element to a first data signal line in response to a change of a row select signal transmitted on a row select line to an active voltage level, and wherein the second pixel element is configured to output the pixel voltage of the second pixel element to a second data signal line in response to the change of the row select signal.

11. The image sensor assembly according to claim 10, wherein the first pixel element comprises a selection transistor configured to pass the pixel voltage of the first pixel element to a first data signal line, and wherein the second pixel element comprises a selection transistor configured to pass the pixel voltage of the second pixel element to a second data signal line.

12. The image sensor assembly according to claim 10, wherein the first pixel element and the second pixel element are configured to terminate the first and second exposure times in response to a change of the row select signal to the active voltage level or in response to a change of another control signal when the row select signal is active.

13. The image sensor assembly according to claim 10, wherein the first pixel element comprises a reset transistor configured to pin the detector cathode of the first pixel element to a reset voltage in response to a first reset signal changing to an active voltage level, and wherein the first exposure time starts with the reset transistor of the first pixel element turning off in response to the first reset signal changing to an inactive voltage level, and wherein the second pixel element comprises a reset transistor configured to pin the detector cathode of the second pixel element to a reset voltage in response to a second reset signal changing toan active voltage level, and wherein the second exposure time starts with the second reset transistor of the second pixel element turning off in response to the second reset signal changing to an inactive voltage level.

14. The image sensor assembly according to claim 10, wherein the first pixel element comprises a transfer transistor configured to connect the detector cathode of the first pixel element to a floating diffusion in response to a first transfer signal changing to an active voltage level, and wherein the first exposure time starts with the transfer transistor of the first pixel element turning off in response to the first transfer signal changing to an inactive voltage level, and wherein the second pixel element comprises a transfer transistor configured to connect the detector cathode of the second pixel element to a floating diffusion in response to a second transfer signal changing to an active voltage level, and wherein the second exposure time starts with the transfer transistor of the second pixel element turning off in response to the second transfer signal changing to an inactive voltage level.

15. The image sensor assembly according to claim 14, wherein the first pixel element comprises a reset transistor configured to reset the floating diffusion of the first pixel element when the transfer transistor of the first pixel element is on, and wherein the second pixel element comprises a reset transistor configured to reset the floating diffusion of the second pixel element when the transfer transistor of the second pixel element is on.

Images