A perovskite photovoltaic element comprising a metal oxide layer between a perovskite photoactive layer and a back electrode, and having a n-i-p-n architecture

Abstract

The present invention relates to a perovskite photovoltaic element (100), comprising a transparent front electrode (2), a back electrode (12), and a stack (20) arranged between the front electrode (2) and the back electrode (12) having a n-i-p-n architecture with a perovskite photoactive layer (5) as i-layer, comprising in sequence the following layers: a) the transparent front electrode (2); b) a doped or non-doped n-type layer (ETL) (3) comprising an electron transport material (ETM), wherein the LUMO of the n-type layer is equal or less negative than -4.4 eV; c) the perovskite photoactive layer (5) comprising at least an inorganic perovskite or an organic perovskite absorber material; d) a doped or non-doped p-type layer (HTL) (7) comprising a hole transport material (HTM), wherein the HOMO of the p-type layer (7) is equal or more negative than -5.0 eV; e) a n-type interlayer (9) comprising an electron transport material (ETM), wherein the LUMO of the n-type interlayer (9) is equal or more negative than -4.0 eV; e) a metal oxide layer (11); and f) the back electrode (12), wherein the back electrode (12) is formed from a metal or an alloy thereof.

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