Multifunctional semiconductor component and electrical device comprising a multifunctional semiconductor component
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- TDK ELECTRONICS AG
- Filing Date
- 2024-02-07
- Publication Date
- 2026-06-17
AI Technical Summary
Existing electronic devices require separate components for overvoltage protection and sensing functions, leading to increased space and cost due to the need for discrete sensor components like temperature and light sensors, which can complicate the design and increase the size of the device.
A multi-functional semiconductor construction element with integrated functional areas, such as ESD protection and temperature/light sensors, using a single semiconductor body with electrical contact elements for monolithic integration, allowing for compact design and combined functionality.
This approach minimizes the device size, eliminates the need for additional sensors, and provides effective overvoltage protection and parameter measurement in a single, miniaturized element, reducing space requirements and costs while maintaining close proximity to the electronic components.
Smart Images
Figure EP2024053003_06022025_PF_FP_ABST
Abstract
Description
[0001] Description
[0002] Multi-functional semiconductor component and electrical device comprising a multi-functional semiconductor component
[0003] A multifunctional semiconductor component is specified. In particular, a multifunctional semiconductor component is specified that can preferably provide a protective function, particularly preferably for at least one further electronic component, and / or at least one sensor function with respect to at least one parameter of a further electronic component and / or the environment. Furthermore, an electrical device comprising the multifunctional semiconductor component is specified.
[0004] For the safe operation of electronic components such as integrated circuits (ICs) and light-emitting diodes (LEDs), external protection against unwanted overvoltages caused, for example, by electrostatic discharges (ESD) or other interference is often required; this is generally referred to as ESD protection. It is therefore common practice to mount an ESD protection element together with the electronic component to be protected in a housing or on another carrier.
[0005] Furthermore, for many applications, knowledge of one or more parameters of the electronic component and / or the environment may be desirable. For example, measuring the component temperature and / or the ambient temperature may be advantageous in order to achieve optimal power control. In addition, some applications require a light sensor to control emitted light power, for example as a function of the ambient light. As a result, it may be necessary to install one or more discrete sensor components, such as a temperature sensor and / or a light sensor, in addition to an ESD protection element. This can lead to increased space requirements, greater effort, and higher costs.
[0006] At least one object of certain embodiments is to specify a multifunctional semiconductor component. At least one object of further embodiments is to specify an electrical device comprising a multifunctional semiconductor component.
[0007] These objects are achieved by subject matter according to the independent patent claims. Advantageous embodiments and developments of the subject matter are characterized in the dependent claims and will further emerge from the following description and the drawings.
[0008] According to at least one embodiment, a multifunctional semiconductor component comprises a semiconductor body and electrical contact elements. The multifunctional semiconductor component can preferably be designed such that it has at least two functions, wherein each of the at least two functions is, in particular, an electrical, electronic, or optoelectronic function.
[0009] Particularly preferred is the
[0010] The multifunctional semiconductor component can be formed essentially by the semiconductor body and the electrical contact elements. This can mean, in particular, that the at least two functions of the multifunctional semiconductor component are enabled exclusively or at least essentially by regions of the semiconductor body, which are therefore referred to below as functional regions, and a suitable electrical connection of the functional regions by means of the electrical contact elements. The semiconductor body can particularly preferably be based on silicon. Alternatively, other semiconductor materials are also possible.
[0011] According to a further embodiment, the semiconductor body has at least two functional regions. For electrically contacting the at least two functional regions, the multifunctional semiconductor component can have at least three electrical contact elements. Each of the functional regions is electrically contacted by means of at least two electrical contact elements. In this case, at least two functional regions can also be contacted, for example, by the same electrical contact element. The at least three electrical contact elements can particularly preferably be formed by electrical contact surfaces, for example in the form of electrode layers, on an outer side of the semiconductor body.Particularly preferably, all electrical contact elements of the multifunctional semiconductor component are arranged on a bottom side of the semiconductor body, with which the multifunctional semiconductor component can be mounted on a carrier such as a housing or a printed circuit board, so that the multifunctional semiconductor component can be mounted on a carrier and electrically connected by means of a surface mounting technique.
[0012] The semiconductor body can have in its interior conduction elements such as electrode layers, conductor tracks and / or electrical vias for the internal electrical interconnection of sub-regions of at least one of the functional regions. Particularly preferably, the semiconductor body can also be free of such conduction elements and, for example, be based entirely on a semiconductor material or be formed by a semiconductor material. Furthermore, the semiconductor body can have electrically insulating regions and / or layers which are produced, for example, by suitable implantation methods, growth methods and / or coating methods. Particularly preferably, the electrically insulating material of such electrically insulating regions and / or layers is likewise based on the semiconductor material of the semiconductor body.In the case of silicon as the semiconductor material, suitable electrically insulating materials may include silicon oxide and / or silicon nitride. Furthermore, one or more trenches may be provided to insulate functional regions, which trench(es) may be introduced into the semiconductor body in addition to or as an alternative to electrically insulating material. Such measures may be implemented, for example, within the framework of a process known as a deep trench method.
[0013] The at least two functional regions are monolithically integrated within the semiconductor body. In other words, the functional regions are not formed by discrete components that are introduced into the semiconductor body or mounted on the semiconductor body, but by one or more subregions of the semiconductor body itself. In particular, each of the functional regions can have one or more subregions, each of the subregions having a suitable doping. In other words, the at least two functional regions can be formed by doped subregions of the semiconductor body. Thus, one or more subregions can be present that are undoped or have an n-doping or a p-doping with a suitable doping concentration and one or more suitable dopants. Accordingly, subregions with an n-doping, an n+ doping, an n ++-doping, a p-doping, a p+-doping and / or a p++-doping. Due to the monolithic integration of all functions into the semiconductor body, the multifunctional semiconductor component can have an extremely small design. Particularly preferably, the multifunctional semiconductor component can have a volume of less than or equal to 0.01 mm 3 have .
[0014] According to a further embodiment, the at least two functional regions comprise a first functional region and a second functional region. In other words, the semiconductor body can comprise at least a first and a second functional region.
[0015] The first functional region is particularly preferably designed as a protective element. For example, the first functional region can be designed as a protective element against overvoltages, i.e. as an ESD protective element. For example, the first functional region can be designed as a protective diode, for example a suppressor diode, perhaps in the form of a unidirectional or bidirectional TVS diode (TVS: “transient voltage suppressor”). Furthermore, the first functional region can be designed, for example, as a protective element against thermal overload, for example as a thermistor, for example as a PTC thermistor (PTC: “positive temperature coefficient”) or as an NTC thermistor (NTC: “negative temperature coefficient”). Furthermore, other protective functions are also possible.
[0016] Furthermore, the second functional region can be configured as a first sensor element. The first sensor element can be configured to measure at least one parameter, wherein the at least one parameter can be, for example, a temperature or a light intensity. Accordingly, the first sensor element can be a temperature sensor or a light sensor.
[0017] Furthermore, the at least two functional regions can have a third functional region, and the third functional region can be designed as a second sensor element. For example, in this case, the first sensor element can be a temperature sensor and the second sensor element a light sensor.
[0018] A functional region configured as a temperature sensor can be a PTC temperature sensor or an NTC temperature sensor, depending on the doping of one or more subregions. A functional region configured as a light sensor can be, for example, a photodiode and can be used, for example, as an ambient light sensor or to measure the light output emitted by a light-emitting component.
[0019] Furthermore, the at least two functional regions can have at least one further functional region, which is designed, for example, as a passive electrical element. The passive electrical element can be, for example, a resistor that can be used, for example, as a series resistor. For example, a functional region designed as a temperature sensor and a further functional region designed as a resistor can be interconnected to form a voltage divider circuit.
[0020] According to a further embodiment, an electrical device comprises a multifunctional semiconductor component and an electronic component. Particularly preferably, at least the protective element of the multifunctional semiconductor component is connected to the electronic component. The multifunctional semiconductor component and the electronic component can preferably be mounted and connected on a common carrier such as a printed circuit board or a housing. The electronic component can, for example, comprise or be a light-emitting component such as a light-emitting diode or a laser diode. Furthermore, the electronic component can comprise an IC or be an IC.
[0021] According to a further embodiment, the multifunctional semiconductor component provides a protective function or a sensor function, or even a protective function and a sensor function, for the multifunctional semiconductor component. For example, the protective function can be provided for the multifunctional semiconductor component, i.e., serve to protect the multifunctional semiconductor component. Furthermore, the sensor function can be provided for the multifunctional semiconductor component, i.e., serve to detect a parameter of the multifunctional semiconductor component.
[0022] According to a further embodiment, the multifunctional semiconductor component provides a protective function or a sensor function, or even a protective function and a sensor function, for one or more parts of the multifunctional semiconductor component. For example, the protective function can be provided for one or more parts of the multifunctional semiconductor component, i.e., serve to protect one or more parts of the multifunctional semiconductor component. Furthermore, the sensor function can be provided for one or more parts of the multifunctional semiconductor component, i.e., serve to detect a parameter of one or more parts of the multifunctional semiconductor component.
[0023] According to a further embodiment, the multifunctional semiconductor component provides a protective function or a sensor function, or even a protective function and a sensor function, for another electronic component. For example, the protective function can be provided for the other electronic component, i.e., serve to protect the other electronic component. Furthermore, the sensor function can be provided for the other electronic component, i.e., serve to detect a parameter of the other electronic component. Furthermore, the sensor function can also serve to detect an environmental parameter.
[0024] According to a further embodiment, the multifunctional semiconductor component provides a protective function or a sensor function or also a protective function and a sensor function for at least two or more or all selected from the multifunctional semiconductor component, one or more parts of the multifunctional semiconductor component, another electronic component and the environment. Thus, the multifunctional semiconductor component can serve to protect and / or detect at least one parameter of at least two or more or all selected from the multifunctional semiconductor component, one or more parts of the multifunctional semiconductor component, another electronic component and the environment.For example, the multifunctional semiconductor component can provide a protective function or a sensor function or even a protective function and a sensor function for the multifunctional semiconductor component and / or for one or more parts of the multifunctional semiconductor component and can provide at least one protective function or a sensor function or even a protective function and a sensor function for another electronic component.
[0025] Particularly preferably, the multifunctional semiconductor component can provide at least one protective function or at least one sensor function, or even both at least one protective function and at least one sensor function, for another electronic component. Furthermore, the multifunctional semiconductor component can provide at least one protective function or at least one sensor function, or even both at least one protective function and at least one sensor function, for only one other electronic component. In the multifunctional semiconductor component described here, the overvoltage protection functions and sensor functions, such as temperature and / or light sensors, can be combined in a common, miniaturized element.Thanks to the at least two functional areas of the multifunctional semiconductor component, in addition to providing a protective function, at least one parameter can be measured with one and the same semiconductor component, so that no additional sensor in the form of an additional component is required. The miniaturized combination of functions in one semiconductor component allows placement in the immediate vicinity of the electronic component to be protected and monitored. This results, for example, in a functional area of the multifunctional semiconductor component serving as a temperature sensor, in an advantageous minimization of the difference between the detected and actual component temperature, which can allow operation closer to the limit. In the case of a light-emitting electronic component, shadowing can be avoided due to the small size of the multifunctional semiconductor component.
[0026] Further advantages, advantageous embodiments and further developments emerge from the exemplary embodiments described below in conjunction with the figures.
[0027] Figures 1A and 1B show schematic representations of a multifunctional semiconductor component according to an embodiment,
[0028] Figures 2A and 2B show schematic representations of a multifunctional semiconductor component according to a further embodiment, Figures 3A to 3D show schematic representations of a multifunctional semiconductor component and an electrical device according to further embodiments as well as resistance measurements on samples of functional areas,
[0029] Figures 4A to 4C show schematic representations of a multifunctional semiconductor component and an electrical device according to further embodiments,
[0030] Figures 5A and 5B show schematic representations of an electrical device according to a further embodiment.
[0031] In the exemplary embodiments and figures, identical, similar, or similarly acting elements may be provided with the same reference numerals. The illustrated elements and their relative sizes are not to be considered true to scale; rather, individual elements, such as layers, components, structural elements, and regions, may be exaggerated for clarity and / or clarity.
[0032] Figures 1A and 1B show a multifunctional semiconductor component 100 according to an exemplary embodiment in a schematic sectional view and a three-dimensional upside-down view with a view of a bottom side 28. The following description refers equally to Figures 1A and 1B.
[0033] The multifunctional semiconductor component 100 has a semiconductor body 10 and electrical contact elements 21, 22, 23, by means of which the multifunctional semiconductor component 100 can be contacted from the outside. The electrical contact elements 21, 22, 23 are formed by electrical contact surfaces, in particular in the form of electrode layers, on the outer side of the semiconductor body 10 formed by the underside 28. For example, the electrical contact elements 21, 22, 23 can be formed by one or more metal layers applied to the semiconductor body 10. Suitable materials for this purpose can be, for example, aluminum, silver, copper, gold, as well as alloys and mixtures containing one or more of these metals.As shown in Figure 1B, all electrical contact elements of the multifunctional semiconductor component 100 are particularly preferably arranged on the underside 28 of the semiconductor body 10, with which the multifunctional semiconductor component 100 can be mounted on a carrier such as a housing or a printed circuit board. This allows for simple assembly and electrical contacting, for example, using SMT (surface-mounting technology).
[0034] The multifunctional semiconductor component 100 according to this and also according to the exemplary embodiments described below has at least two functions, wherein each of the at least two functions is in particular an electrical, electronic or optoelectronic function. As shown, the multifunctional semiconductor component 100 is essentially formed by the semiconductor body 10 and the electrical contact elements 21, 22, 23. In other words, the functions of the multifunctional semiconductor component 100 are realized exclusively or at least essentially by functional regions 31, 32 of the semiconductor body 10 and a suitable electrical connection thereof by means of the electrical contact elements 21, 22, 23. The multifunctional semiconductor component 100 shown in Figures 1A and 1B has a semiconductor body 10 with two functional regions 31, 32.For electrically contacting the at least two functional regions 31, 32, the multifunctional semiconductor component 100 has the three electrical contact elements 21, 22, 23, wherein each of the functional regions 31, 32 is contacted jointly by the electrical contact element 21.
[0035] Particularly preferably, the semiconductor body 10 is based on a semiconductor material such as silicon. Alternatively, however, other semiconductor materials are also possible.
[0036] Even though the semiconductor body 10 may have conduction elements in its interior, such as electrode layers, conductor tracks and / or electrical vias for the internal electrical interconnection of subregions of at least one of the functional regions 31, 32, the semiconductor body 10 is particularly preferably free of such conduction elements and is formed entirely or substantially entirely by the semiconductor material. This may include the semiconductor body 10 also having electrically insulating regions and / or layers (not shown), for example in order to separate the functional regions 31, 32 from one another in the semiconductor body 10 and / or in order to provide a protective coating on the semiconductor body 10.
[0037] The two functional regions 31, 32 are monolithically integrated within the semiconductor body 10, such that the functional regions 31, 32 are not formed by discrete components that are introduced into the semiconductor body 10 or mounted on the semiconductor body 10. In particular, the functional regions 31, 32 are formed by one or more subregions of the semiconductor body 10 itself. This means that each of the functional regions 31, 32 has one or more subregions, wherein each of the subregions can have a suitable doping. In other words, the at least two functional regions 31, 32 can be formed by doped and / or undoped subregions of the semiconductor body 10. Due to the monolithic integration of all functions into the semiconductor body 10, the multifunctional semiconductor component 100 can have an extremely small design.Particularly preferably, the multifunctional semiconductor component 100 can have a length and a width of less than or equal to 0.5 mm and a height of less than or equal to 0.2 mm and a volume of less than or equal to 0.05 mm. 3 and preferably less than or equal to 0.01 mm 3 have.
[0038] In the exemplary embodiment shown, the semiconductor body 10 has an n-doped region 51, on which, for example, a p-doped region 52 in the form of a layer can be present on the upper side opposite the underside 28. In the n-doped region 51, which has a basic doping, partial regions 11, 12, 13, 14, 15, 16 are provided, which have the same or a different doping than the basic doping and which, depending on the design, alone or together form the functional regions 31, 32. A different doping, which could, for example, be a different dopant and / or a different
[0039] Dopant concentration can be produced, for example, by suitable growth processes, in particular mask-based processes, and / or implantation techniques.
[0040] The structures of the functional regions shown in Figure 1B and the corresponding other figures are not intended to be limiting. As an alternative to the illustrated geometries and the described dopings, other configurations are also possible in order to realize other functions and / or performance parameters.
[0041] 1A and 1B, the semiconductor body 10 has a first functional region 31 and a second functional region 32, the first functional region 31 being designed as a protective element, for example against overvoltages in the form of an ESD protective element. As indicated in Figure 1A, the first functional region 31 is designed as a protective diode and in particular as a suppressor diode in the form of a bidirectional TVS diode. For this purpose, p+-doped partial regions 11, 12 are introduced into the n-doped region 51 with the basic doping in contact with a respective electrical contact element 21, 22, which partial regions are separated from one another by a partial region 13 with the basic doping.
[0042] The second functional region 32 is designed as a first sensor element. In the exemplary embodiment shown, the sensor element is a light sensor, as indicated in Figure 1A. The light sensor can be a photodiode, for example, and is designed, for example, as an ambient light sensor or for measuring a light output emitted by a light-emitting component. For this purpose, the second functional region 32 has, for example, as indicated in Figure 1B, a p+-doped region 14 in contact with the electrical contact element 23 and an n+-doped region 15 in contact with the common electrical contact element 21, between which a partial region 16 with the basic doping is arranged. Alternatively, other diode designs are also possible.
[0043] By interconnecting the electrical contact elements 21 and 22 of the first functional region 31 with an electrical component, the latter can be protected from overvoltages, while a photodiode signal from the second functional region 32 can be simultaneously tapped at the electrical contact elements 21 and 23. Furthermore, it may also be possible for the protective function and / or the sensor function to be provided additionally or alternatively for the multifunctional semiconductor component 100 itself or for one or more parts of the multifunctional semiconductor component 100.
[0044] The figures described below show modifications and further developments of the exemplary embodiments of Figures 1A and 1B. Therefore, the following description is limited to differences from previous exemplary embodiments. Features that are not explicitly described may therefore be implemented in accordance with the previous description.
[0045] Figures 2A and 2B show a
[0046] Multifunctional semiconductor component 100 according to another
[0047] From example shown, in which in contrast to the
[0048] In the embodiment of Figures 1A and 1B, the second functional region 32, and thus the first sensor element, is designed as a temperature sensor. Depending on the doping of one or more subregions, the temperature sensor can be a PTC temperature sensor or an NTC temperature sensor. In the embodiment shown, an n-doped subregion 17 is provided in the semiconductor body 10 for this purpose, in contact with the electrical contact elements 21 and 23, which allows a suitable temperature dependence of the electrical resistance measurable between the electrical contact elements 21, 23.
[0049] Furthermore, it may also be possible to provide a passive electrical element, for example an electrical resistor by means of a suitable doping such as a p-doping, between the electrical contact elements 21 and 23, which can be used as a series resistor, as shown in connection with Figures 3A to 3D in a corresponding further exemplary embodiment. The views of Figures 3A and 3B correspond to the views shown in Figures 1A and 1B and in Figures 2A and 2B. The semiconductor body 10 thus has a further functional region 34, which is formed by a partial region 18 with the p-doping.
[0050] In this embodiment, the second functional region 32 is formed between the electrical contact elements 22, 23, corresponding to the previous embodiment. As a result, the second functional region 32, designed as a temperature sensor, and the further functional region 34, designed as an electrical resistor, are interconnected to form a voltage divider circuit. Thus, in the multifunctional semiconductor component 100 shown in Figures 3A and 3B, a series resistor advantageous for reading the temperature sensor can be integrated into the multifunctional semiconductor component 100.
[0051] Figure 3C shows resistance measurements on samples of semiconductor bodies using such temperature sensors. The sample number N is plotted along the horizontal axis, while the electrical resistance value R is plotted along the vertical axis. For each of the samples N, three measurements were carried out, which together result in the three graphs A, B, and C shown: Graph A corresponds to initial resistance measurements on all samples N at a temperature of 25 °C. Graph B corresponds to resistance measurements after heating the samples N to a temperature of 100 °C. Graph C corresponds to resistance measurements after subsequent cooling of the samples N back to a temperature of 25 °C. The almost complete overlap of graphs A and C indicates good reproducibility.
[0052] Figure 3D shows an equivalent circuit diagram of an electrical device 1000 in which the multifunctional semiconductor component 100 described in connection with Figures 3A and 3B is connected to an electronic component 200 in order to enable a protective function by the first functional region 31 and, at the same time, a temperature measurement by the second functional region 32 in connection with the further functional region 34. The electronic component 200 can, for example, have or be a light-emitting component such as a light-emitting diode or a laser diode. Furthermore, the electronic component 200 can have an IC or be an IC. Figures 4A to 4C show schematic representations of the multifunctional semiconductor component 100 and the electrical device 1000 according to further embodiments, corresponding to those in Figures 3A, 3B and 3D of the previous embodiment.Compared to the previously described embodiment, the semiconductor body 10 now additionally has a third functional region 33, which is designed as a second sensor element. For example, the second sensor element can be a light sensor, as described in connection with Figures 1A and 1B. Accordingly, the semiconductor body 10 has doped subregions 14 and 15, which are in electrical contact with a further electrical contact element 24 and the electrical contact element 21 and which, together with the subregion 16, form a photodiode.
[0053] Thus, in addition to the advantage of the embodiments described in connection with Figures 3A to 3D, a light sensor can also be integrated into the multifunctional semiconductor component 100, so that the electrical component 200 can be operated in a light intensity-controlled manner.
[0054] Figures 5A and 5B show further exemplary embodiments of the electrical device 1000, in which the multifunctional semiconductor component 100 and the electrical component 200 are mounted and interconnected on a common carrier 300. The common carrier 300 can, for example, be a printed circuit board as indicated in Figure 5A or a housing as indicated in Figure 5B. Due to the at least two functional regions of the multifunctional semiconductor component 100, at least one parameter can thus be measured with the same semiconductor component 100 that forms the protective element for the electronic component 200, so that no additional sensor in the form of an additional component is required.The miniaturized combination of functions in one element allows for placement very close to the electronic component 200 to be protected and monitored, so that no or only a minimal shadow cast by the multifunctional semiconductor component 100 is required. The electronic component 200 can thus be protected against overvoltages and simultaneously operated with temperature and / or light intensity control.
[0055] The features and exemplary embodiments described in conjunction with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in conjunction with the figures can alternatively or additionally comprise further features according to the description in the general part.
[0056] The invention is not limited to the embodiments described herein. Rather, the invention encompasses any novel feature and any combination of features, including, in particular, any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or embodiments. List of Reference Symbols
[0057] 10 semiconductor bodies
[0058] 11, 12, 13, 14 sub-area 15, 16, 17, 18 sub-area
[0059] 21, 22, 23, 24 Contact element
[0060] 28 Bottom
[0061] 31, 32, 33 functional area
[0062] 41 functional area 51 n-doped area
[0063] 52 p-doped region
[0064] 100 multifunctional semiconductor components
[0065] 200 electronic components
[0066] 300 carriers 1000 electrical devices
[0067] A, B, C graph
Claims
Patent claims 1. Multifunctional semiconductor component (100) comprising - a semiconductor body (10) with at least two functional regions (31, 32, 33), - at least three electrical contact elements (21, 22, 23, 24) on at least one outer side (28) of the semiconductor body (10) for electrically contacting the at least two functional regions (31, 32, 33, 34), wherein - the at least two functional regions (31, 32, 33, 34) are monolithically integrated within the semiconductor body (10), - the at least two functional areas (31, 32, 33, 34) have a first functional area (31) and a second functional area (32), - the first functional area (31) is designed as a protective element and - the second functional area (32) as a first Sensor element is designed to measure at least one parameter.
2. Multifunctional semiconductor component (100) according to claim 1, wherein the at least two functional regions (31, 32, 33, 34) comprise doped subregions (11, 12, 13, 14, 15, 16, 17) of the semiconductor body (10).
3. Multifunctional semiconductor component (100) according to claim 1 or 2, wherein the first sensor element is a light sensor.
4. Multifunctional semiconductor component (100) according to claim 1 or 2, wherein the first sensor element is a temperature sensor.
5. Multifunctional semiconductor component (100) according to claim 1 or 2, wherein the at least two functional regions (31, 32, 33, 34) have a third functional region (33) and the third functional region (33) is designed as a second sensor element.
6. Multifunctional semiconductor device (100) according to claim 5, wherein the first sensor element is a temperature sensor and the second sensor element is a light sensor.
7. Multifunctional semiconductor device (100) according to claim 3 or 6, wherein the light sensor is a photodiode.
8. Multifunctional semiconductor component (100) according to one of claims 4 to 6, wherein the temperature sensor is a PTC temperature sensor or an NTC temperature sensor.
9. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the at least two functional regions (31, 32, 33, 34) have at least one further functional region (34) which is designed as a passive electrical element.
10. Multifunctional semiconductor device (100) according to claim 9, wherein the passive electrical element is a resistor.
11. Multifunctional semiconductor component (100) according to claim 10, wherein the temperature sensor and the resistor are connected to form a voltage divider circuit.
12. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the semiconductor body (10) is based on silicon.
13. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein all electrical contact elements (21, 22, 23, 24) of the multifunctional semiconductor component (100) are arranged on an underside (28) of the semiconductor body (10).
14. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the multifunctional semiconductor component (100) has a volume of less than or equal to 0.01 mm 3 has.
15. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the multifunctional semiconductor component (100) is designed to provide a protective function for at least one further electronic component and / or at least one sensor function with respect to at least one parameter of a further electronic component and / or the environment.
16. Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the first functional region (31) is designed as a protective element against overvoltages.
17. Multifunctional semiconductor component (100) according to claim 15 and 16, wherein the first functional region (31) is designed as a protective element against overvoltages for the further electronic component.
18. Electrical device (1000) comprising - a multifunctional semiconductor component (100) according to one of the preceding claims and - an electronic component (200), wherein - at least the protective element of the Multifunctional semiconductor component (100) is connected to the electronic component (200).