Transformation module for an RF amplifier arrangement, RF amplifier arrangement comprising such a transformation module, and arrangement for accelerating particles comprising at least one such RF amplifier arrangement
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- TRUMPF PATENTABTEILUNG
- Filing Date
- 2024-08-29
- Publication Date
- 2026-07-08
Smart Images
Figure EP2024074224_06032025_PF_FP_ABST
Abstract
Description
[0001] Transformation module for an RF amplifier arrangement, an RF amplifier arrangement with such a transformation module and an arrangement for accelerating particles with at least one such RF amplifier arrangement
[0002] The invention relates to a transformation module for an RF amplifier arrangement, an RF amplifier arrangement with such a transformation module and an arrangement for accelerating particles, in particular a particle accelerator with at least one such RF amplifier arrangement.
[0003] In high-frequency applications, inductive transformers are often used to match the input impedance. This allows for a broader bandwidth match, for example, in an amplifier. An inductive transformer changes the input impedance by a factor determined by its number of turns. Typical factors are 1:4 or 1:9. Ferrites are used for low frequencies, especially below 100 MHz or below 40 MHz. Microstrip structures are typically used in transformers for higher frequencies, especially above 200 MHz or above 400 MHz.
[0004] The frequency ranges in between pose a challenge for such impedance transformers. In particular, frequencies between 40 MHz and 400 MHz and, furthermore, frequencies between 100 MHz and 200 MHz.
[0005] Ferrites are inadequate in these frequency ranges, and pure microstrip structures are too large. Currently, impedance transformers in the above-mentioned frequency range are usually implemented as bent coaxial cables whose outer conductors are electrically connected. Such inductive impedance transformers are expensive to manufacture and complex to assemble. Furthermore, the manufacturing tolerances of bent coaxial cables are high, which leads to parasitic effects. Such inductive impedance transformers often have to be manually tuned again after production, which is an enormous effort. Furthermore, inductive impedance transformers implemented using coaxial cables are space-consuming. Particularly in applications involving particle acceleration, very high reliability requirements are placed on them.In addition, the very high power levels required often require a very large number of RF amplifier arrays that must reproduce the same function. Components that require a high degree of manual labor during manufacture are disadvantageous for this.
[0006] The object of the present invention is therefore to create an impedance transformer that can be manufactured inexpensively and reproducibly, and that has a compact design. At the same time, assembly during production should be as simple as possible.
[0007] This object is achieved by the transformation module according to independent claim 1. Claim 20 describes an RF amplifier arrangement comprising such a transformation module. Claim 24 describes an arrangement for accelerating charged particles, which has at least one such RF amplifier arrangement. Claims 2 to 19 specify advantageous developments of the transformation module. Claims 21 to 23 specify advantageous developments of the RF amplifier circuit. Claim 25 describes an advantageous development of the arrangement for accelerating charged particles. The transformation module described here serves to transform a first input impedance at a first transformation module connection to a second input impedance at a second transformation module connection.
[0008] The transformation module is suitable, for example, for use in an RF amplifier arrangement, in particular in a push-pull amplifier arrangement.
[0009] Such an RF amplifier arrangement can be used, for example, in a device for accelerating charged particles. "Charged particles" here refer to particles of atomic or molecular size.
[0010] An arrangement for accelerating charged particles can mean:
[0011] - Plasma process for coating or etching or other material processing in which ions are accelerated to achieve the process result, in particular the excitation of gas lasers.
[0012] - Particle accelerators, such as linear particle accelerators (LINACs), cyclotrons or similar accelerators of charged particles.
[0013] To significantly simplify manufacturing and handling, the transformation module features a multilayer structure. A multilayer planar substrate, particularly in the form of a printed circuit board, is provided for this purpose.
[0014] The multilayer substrate has a first outer layer, a second outer layer and a first intermediate layer, wherein the first intermediate layer is arranged between the first and second outer layers.
[0015] An outer conductor having a first outer conductor layer and a second outer conductor layer is arranged on or in the substrate, wherein the first outer conductor layer is arranged in the form of a first planar outer conductor winding with a first and a second end on or in the first outer layer, and wherein the second outer conductor layer is arranged in the form of a second planar outer conductor winding with a first and a second end on or in the second outer layer. The first outer conductor layer and the second outer conductor layer are galvanically connected to one another, wherein the respective first ends of the first and second outer conductor layers form a first outer conductor connection of the first transformation module connection, and wherein the respective second ends of the first and second outer conductor layers form a second outer conductor connection of the first transformation module connection.
[0016] An inner conductor with an inner conductor track is arranged on or in the substrate. The inner conductor track runs in a planar inner conductor winding, wherein at least a first part of the planar inner conductor winding is arranged in the first intermediate layer, and wherein the inner conductor track is covered by the first outer conductor layer in the direction of the first outer layer and by the second outer conductor layer in the direction of the second outer layer.
[0017] The inner conductor track comprises a first inner conductor end and a second inner conductor end, wherein the two inner conductor ends form the second transformation module connection.
[0018] The first and second planar outer conductor windings and the planar inner conductor winding are arranged predominantly overlapping each other in plan view. This allows a predetermined electrical and magnetic coupling to be established between the first and second planar outer conductor windings and the planar inner conductor winding.
[0019] An outer conductor connection arrangement is arranged on or in the substrate, which galvanically connects the first and second outer conductor layers to one another in such a way that the outer conductor connection arrangement, together with the first and second outer conductor layers, forms an outer conductor sheath that predominantly encloses the planar inner conductor winding of the inner conductor track in an RF-tight manner. In one aspect, the outer conductor connection arrangement is at least partially, preferably predominantly, arranged on an outer region of at least one of the following:
[0020] - the planar substrate,
[0021] - the first outer conductor layer or
[0022] - the second outer conductor layer.
[0023] The term "outer area" refers to the area around the outer edge of the device in question. This can be the outer edge. It can also be an area that lies within the outer edge but in close proximity to it.
[0024] In one aspect, the transformation module comprises a multilayer planar structure. Such a multilayer planar structure can be manufactured particularly easily and reproducibly.
[0025] In one aspect, the inner conductor comprises a planar inner conductor winding and is arranged between the first outer conductor layer and the second outer conductor layer, wherein the first outer conductor layer and the second outer conductor layer are also each constructed in the form of a first planar outer conductor winding and a second planar outer conductor winding. This allows the transformation ratio between the first transformation module connection, with its first and second outer conductor connections, and the second transformation module connection, with its first and second inner conductor ends, to be adjusted in a very clever manner.
[0026] If, for example, the first and second planar outer conductor turns each comprise exactly one loop that extends around a center and the planar inner conductor turn comprises two loops that extend around a center, the transformation ratio is 1:4. If, on the other hand, the planar inner conductor turn comprises three loops that extend around the center, the transformation ratio is 1:9. In order to further improve the electrical properties, the substrate comprises, in a further aspect, the outer conductor connection arrangement. It is particularly advantageous here that the first and second outer conductor layers are galvanically connected to one another by the outer conductor connection arrangement, so that the planar inner conductor turn is enclosed by this galvanic connection. The planar inner conductor turn runs like an RF cage, whereby electromagnetic waves from outside are not or only partially transmitted.can hardly couple into the planar inner conductor winding and as a result RF signals on the planar inner conductor winding cannot or can hardly penetrate outwards.
[0027] The wording according to which the outer conductor sheath encloses the planar inner conductor winding of the inner conductor track of the inner conductor in an RF-tight manner to a "predominant part" is to be understood in such a way that more than 50%, 60%, 70%, 80% or more than 90% of the area between the first and second outer conductor layer is shielded to the side by the outer conductor connection arrangement.
[0028] The transformation module can be operated in two directions. An RF signal can be applied to the first inner conductor end and / or the second inner conductor end, and thus to the second transformation module connection. An RF signal can also be applied to the first outer conductor connection and / or the second outer conductor connection, and thus to the first transformation module connection. The RF signal is then output, transformed accordingly, at the other transformation module connection. An RF signal is an electrical signal, in particular an electrical voltage relative to a fixed potential, such as a reference ground.
[0029] The term "RF-tight" means that RF fields cannot penetrate or escape, or only with significant attenuation. The field is therefore concentrated inside the transformation module and does not disperse widely. An "input impedance" is specifically understood to be an impedance measured with an RF signal at a terminal relative to a fixed potential, e.g., ground. The impedance can have a real and an imaginary part.
[0030] In one aspect, the circuit board is a PCB (printed circuit board).
[0031] In one aspect, the first outer conductor layer is a predetermined electrically conductive conductor track structure in the first outer layer. Additionally or alternatively, the second outer conductor layer is a predetermined electrically conductive conductor track structure in the second outer layer.
[0032] In one aspect, the inner conductor track is a predetermined electrically conductive conductor track structure in the first intermediate layer.
[0033] In one aspect, the planar inner conductor winding extends around a center in the first intermediate layer.
[0034] In one aspect, the planar inner conductor winding extends in at least one loop, 1.5 loops, 2 loops, 2.5 loops, or 3 loops around the center of the first intermediate layer.
[0035] In one aspect, the transformation module is operable in a frequency range from 40 MHz to 400 MHz, and in particular in a frequency range from 100 MHz to 200 MHz. This allows for addressing, in particular, those frequency ranges that cannot be reached or are difficult to reach using ferrite or microstrip structures.
[0036] In one aspect, the inner conductor track has a width that is smaller than the width of the first and second outer conductor layers. As a result, the inner conductor track is particularly well enclosed by the first and second outer conductor layers in an RF-tight manner. In particular, the width of the inner conductor track is smaller than the width of the first and second outer conductor layers over the entire length of the inner conductor track, or over the majority of the length of the inner track, or over at least the first part of the planar inner conductor winding.
[0037] In one aspect, the first outer layer is an external layer on the substrate, in particular on the circuit board. Additionally or alternatively, the second outer layer is an external layer on the substrate, in particular on the circuit board.
[0038] In one aspect, the first outer layer is partially or completely covered by dielectric insulation. In this case, the first outer conductor layer is completely or partially covered by such dielectric insulation. Furthermore, further layers may be applied to the first outer layer. Alternatively, the first outer layer is free or predominantly free of such dielectric insulation. In this case, the first outer conductor layer is not covered or predominantly not covered by such dielectric insulation.
[0039] In one aspect, the second outer layer is partially or completely covered by dielectric insulation. In this case, the second outer conductor layer is completely or partially covered by such dielectric insulation. Furthermore, further layers may be applied to the second outer layer. Alternatively, the second outer layer is free or predominantly free of such dielectric insulation. In this case, the second outer conductor layer is not covered or predominantly not covered by such dielectric insulation.
[0040] In one aspect, the first outer conductor layer is formed as a planar metallization layer and is free or predominantly free of recesses in this metallization layer. Alternatively, the first outer conductor layer is formed as a metallization layer with such recesses, so that the metallization layer has a line and / or grid structure.
[0041] In one aspect, the second outer conductor layer is formed as a planar metallization layer and is free or predominantly free of recesses in this metallization layer. Alternatively, the second outer conductor layer is formed as a metallization layer with such recesses, so that the metallization layer has a line and / or grid structure.
[0042] In one aspect, the first outer conductor layer is rectangular, square, elliptical, or round in plan view. Additionally or alternatively, the second outer conductor layer is rectangular, square, elliptical, or round in plan view.
[0043] In one aspect, the first outer conductor layer and the second outer conductor layer define a respective center on the first and second outer layers, thereby forming the first planar outer conductor turn and the second planar outer conductor turn.
[0044] In one aspect, the first outer conductor layer and the second outer conductor layer have the same shape in plan view, or the shape differs from each other by less than 10%. In particular, a deviation in the coverage in plan view is less than 10% of the surface area of the first or second outer conductor layer.
[0045] In one aspect, the first planar outer conductor winding is separated by an interruption, thereby forming the first and second ends. Furthermore, the second planar outer conductor winding is separated by an interruption, thereby forming the first and second ends.
[0046] In one aspect, the interruption runs along a straight line and is free of angles and curves. In one aspect, the interruption in the first outer conductor layer and the interruption in the second outer conductor layer are arranged overlapping or predominantly overlapping each other in plan view.
[0047] In one aspect, in a plan view of the interruption of the first or second outer conductor layer, the first part of the planar inner conductor turn crosses the interruption of the first or second outer conductor layer at an angle, which in one aspect is perpendicular, on the first intermediate layer.
[0048] In one aspect, the first outer conductor layer is axially symmetrical to a longitudinal axis that runs through the interruption in the first outer conductor layer. Additionally or alternatively, the second outer conductor layer is axially symmetrical to a longitudinal axis that runs through the interruption in the second outer conductor layer.
[0049] In one aspect, the transformation module comprises a supply connection, in particular a DC voltage connection.
[0050] The supply connection can, in particular, be connected to the first and / or second outer conductor layer at a feed-in point. The feed-in point can, in particular, be arranged opposite the respective interruption. Thus, in particular, a straight line passing through the respective interruption can also pass through the feed-in point.
[0051] With an axially symmetrical structure of the first and / or second outer conductor layer, the longitudinal axis can run through the corresponding feed point. This achieves a symmetrical feed. The DC voltage can be used to power the RF amplifier arrangement. In one aspect, the substrate comprises a second intermediate layer, wherein the first intermediate layer and the second intermediate layer are arranged between the first and second outer layers.
[0052] The inner conductor track can also be arranged on the second intermediate layer. The first and second intermediate layers can, in particular, be arranged one above the other. The advantage of a second intermediate layer, and thus preferably a total of four layers arranged one above the other, is that a circuit board with four layers can be pressed symmetrically, and the production of such a circuit board is more cost-effective than using only three layers.
[0053] In one aspect, the inner conductor track is a predetermined electrically conductive conductor track structure in the second intermediate layer.
[0054] In one aspect, a dielectric material is introduced between the first intermediate layer and the second intermediate layer.
[0055] In one aspect, the substrate comprises a via through which the internal conductor line transitions from the first intermediate layer to the second intermediate layer. The via can extend through the entire substrate or only a portion of the substrate, e.g., the first and second intermediate layers.
[0056] In one aspect, at least a second part of the planar inner conductor winding is arranged in the second intermediate layer. In particular, the inner conductor track, in particular the second part of the planar inner conductor winding, is covered by the first outer conductor layer in the direction of the first outer layer and by the second outer conductor layer in the direction of the second outer layer. By using such a second intermediate layer, a higher transformation ratio can be achieved while still maintaining a compact structure of the transformation module. In one aspect, the first part of the planar inner conductor winding has the same number of loops as the second part of the planar inner conductor winding. For example, the first part of the planar inner conductor winding can comprise one loop and the second part of the planar inner conductor winding can also comprise one loop.In total, this results in two loops, resulting in a transformation ratio of 1:4, assuming that the first and second planar outer conductor turns also each comprise one loop. Preferably, the first part of the planar inner conductor turn has 1.5 loops, and the second part of the planar inner conductor turn also has 1.5 loops. This results in a total of three loops, resulting in a transformation ratio of 1:9.
[0057] In one aspect, the first part of the planar inner conductor winding on the first intermediate layer runs in the same direction, in particular around a center on the first intermediate layer, as the second part of the planar inner conductor winding on the second intermediate layer, which runs around a center on the second intermediate layer. For example, the first part and the second part run clockwise or counterclockwise.
[0058] In one aspect, a first part of the planar inner conductor winding on the first intermediate layer is arranged in a plan view that only partially overlaps a second part of the planar inner conductor winding on the second intermediate layer. This reduces the capacitive coupling between the first part and the second part, which has a positive effect on the electrical properties of the transformation module.
[0059] In one aspect, the substrate comprises a via through which the inner conductor track transitions from the first intermediate layer to the first or second outer layer. In this case, preferably, no second intermediate layer is necessary. In one aspect, a second portion of the planar inner conductor winding extends partially or completely through the interruption of the first or second outer conductor layer on the first or second outer layer.
[0060] In one aspect, in a first alternative, the second part of the planar inner conductor winding continues to run on the first or second outer layer.
[0061] In one aspect, in a second alternative, the second part of the planar inner conductor winding changes from the first or second outer layer back to the first intermediate layer via another via. There it can run at a greater distance around a center of the first intermediate layer than directly before the change to the first or second outer layer or than the first part directly before the change to the first or second outer layer. This makes it possible for the inner conductor to be led out of the intermediate layer again, whereby both the first inner conductor end and the second inner conductor end are available as respective connections. In principle, however, the inner conductor should remain in the intermediate layer for as long as possible because it is shielded in the intermediate layer by the first and second outer conductor layers.
[0062] In one aspect, the first inner conductor end and the second inner conductor end of the inner conductor track are arranged on the same side of the substrate. This enables particularly simple connection.
[0063] In one aspect, the first inner conductor end and / or the second inner conductor end protrude laterally beyond the first and / or second outer conductor layer in a plan view of the first and / or second outer conductor layer, thereby enabling easy connection.
[0064] In one aspect, an edge of the substrate on which the first inner conductor end and / or the second inner conductor end are arranged is metallized, in particular galvanized, whereby the first inner conductor end and / or the second inner conductor end can be soldered to a further circuit board of the RF amplifier arrangement in an SMD process.
[0065] In one aspect, the outer conductor connection arrangement comprises a plurality of vias that galvanically connect the first outer conductor layer to the second outer conductor layer. These vias then form the outer conductor sheath. Additionally or alternatively, the outer conductor connection arrangement comprises an electrically conductive connection, in particular a galvanization, arranged at the edge of the substrate and galvanically connecting the first outer conductor layer to the second outer conductor layer.
[0066] This electrically conductive connection then forms the outer conductor sheath.
[0067] In one aspect, the electrically conductive connection along the edge is predominantly closed.
[0068] In one aspect, the vias are arranged at a distance from one another that is smaller than A / 4 or A / 10, where A is the wavelength of the frequency, in particular the center frequency of an RF signal that is transmitted via the transformation module.
[0069] In one aspect, the plurality of vias follow an inner and an outer boundary line, with the inner conductor track running between the inner and outer boundary lines, thereby electromagnetically shielding the inner conductor track in this region. The inner boundary line is arranged closer to the center of the substrate than the outer boundary line.
[0070] In one aspect, the outer boundary line can run along the edge region of the substrate or be spaced apart therefrom. In one aspect, the vias can be introduced only in the region of the first and second outer layers in which the first and second outer conductor layers are located.
[0071] In another aspect, the plurality of vias may follow an inner boundary line.
[0072] In one aspect, the edge of the substrate can be provided with the electrically conductive connection, in particular a galvanic coating, wherein the inner conductor track runs between the inner boundary line and the electrically conductive connection, whereby the inner conductor track is electromagnetically shielded in this area. In this case, both vias and an electrical connection, in particular in the form of a galvanic coating, are used.
[0073] In another aspect, the substrate includes a recess in its center, thereby forming an inner edge.
[0074] In one aspect, the outer conductor connection arrangement may comprise an inner electrically conductive connection, in particular in the form of a plating, formed on the inner edge.
[0075] In one aspect, the inner conductor track may extend between the inner electrically conductive connection at the inner edge and the electrically conductive connection at the outer edge, whereby the inner conductor track is electromagnetically shielded in this region.
[0076] In one aspect, the outer conductor connection arrangement comprises at least one interruption. In one aspect, the inner conductor track can emerge from the at least one interruption in order to change from the first intermediate layer to another layer, for example the second intermediate layer or the first or second outer layer. The interruption in the outer layer can therefore be used to guide part of the inner conductor track. This can be advantageously used to save layers and only guide intersections of the inner conductor track in an outer layer. Additionally or alternatively, the inner conductor track emerges from the at least one interruption with its first and second inner conductor ends. In principle, there can be two interruptions spaced apart from one another, with the inner conductor track emerging from the first interruption with its first inner conductor end and from the second interruption with its second inner conductor end.
[0077] In one aspect, the substrate comprises a plurality of additional vias, wherein the additional vias galvanically connect the first outer conductor layer to the second outer conductor layer. The additional vias run between two loops of the planar inner conductor winding of the inner conductor track. This achieves improved decoupling between two loops of the inner conductor track. The two loops can be arranged on the same layer or on different layers. Layers can also be intermediate layers. In addition to or as an alternative to the additional vias, an additional electrically conductive connection, in particular electroplating, can also be used. To introduce this additional electrically conductive connection, the substrate would have to be milled accordingly.
[0078] In one aspect, an RF signal can be supplied or output at the first inner conductor end. More preferably, the second inner conductor end can be connected to a fixed potential, in particular a reference ground. In this context, the second transformation module connection of the transformation module is preferably a single-ended connection. In one aspect, the first transformation module connection of the transformation module is a differential connection, wherein a first RF signal of a differential RF signal can be output or supplied at the first ends of the first and second outer conductor layers, and wherein a second RF signal of the differential RF signal can be output or supplied at the second ends of the first and second outer conductor layers.
[0079] The second transformation module connection of the transformation module can also be a differential connection. In this context, the first transformation module connection of the transformation module can be a single-ended connection.
[0080] In one aspect, the first planar outer conductor winding and the second planar outer conductor winding are galvanically isolated from the planar inner conductor winding.
[0081] In one aspect, the first planar outer conductor winding and the second planar outer conductor winding are each formed as a single piece.
[0082] The RF amplifier arrangement described here is designed in particular in the form of a push-pull amplifier arrangement. In one aspect, the RF amplifier arrangement comprises a first transistor, a second transistor, and a previously described transformation module.
[0083] In a further aspect, the RF amplifier arrangement may have a signal input to which an RF signal to be amplified can be applied, wherein the signal input is connected to the first inner conductor end of the inner conductor track.
[0084] In another aspect, the second inner conductor end of the inner conductor track is connected to a reference ground. In another aspect, the respective first ends of the first and second outer conductor layers are connected to a gate terminal of the first transistor via a first connection.
[0085] In one aspect, the respective second ends of the first and second outer conductor layers are connected to a gate terminal of the second transistor via a second connection. In this application, a single-ended connection can be transformed into a differential connection.
[0086] In a further aspect, the transformation module can be designed for high power, in particular greater than or equal to 200 W, and in particular can be designed for connection to the output of a previously described RF amplifier arrangement. Thus, the differential outputs of an RF amplifier arrangement can be formed into an asymmetric output, in which one connection can be connected to a reference ground and the other connection can be connected to a load as an RF signal.
[0087] In one aspect, the RF amplifier arrangement comprises a supply input connected to a supply terminal on the first and / or second outer conductor layer of the transformation module. The first transistor and the second transistor can be supplied with energy via this supply input.
[0088] In one aspect, the transformation module is arranged on a circuit board of the RF amplifier arrangement and, in particular, soldered to the circuit board using a soldering method, such as a reflow method. A bonding method and / or an electrically conductive adhesive can also be used to electrically connect the transformation module to the circuit board of the RF amplifier arrangement. Alternatively, the transformation module can be directly part of the circuit board of the RF amplifier arrangement. In one aspect, a first impedance matching circuit is arranged in the first connection in order to transform the input impedance at the first outer conductor terminal of the first transformation module terminal of the transformation module to an input impedance of the first transistor.Furthermore, a second impedance matching circuit is arranged in the second connection in order to transform the input impedance at the second outer conductor terminal of the first transformation module terminal of the transformation module to an input impedance of the second transistor.
[0089] In one aspect, the input impedance at the first outer conductor terminal of the first transformation module terminal is higher than the input impedance of the first transistor. Furthermore, the input impedance at the second outer conductor terminal of the first transformation module terminal is higher than the input impedance of the second transistor.
[0090] In one aspect, the input impedance of the first and second transistors is only a few ohms, in particular less than 10 ohms.
[0091] In one aspect, the first impedance matching circuit comprises at least one inductance, such as a coil, and at least one capacitance.
[0092] In one aspect, the second impedance matching circuit comprises at least one inductance, such as a coil, and at least one capacitance.
[0093] In one aspect, the transformation ratio of the first impedance matching circuit and the second impedance matching circuit is fixed during operation. Alternatively, the transformation ratio of the first impedance matching circuit and the second impedance matching circuit can be changed during operation by connecting and disconnecting reactances, such as inductances or capacitances.
[0094] In one aspect, this switching on and off is done via semiconductor switches, which also include PIN diodes.
[0095] In a further aspect, the arrangement for accelerating charged particles, in particular in the form of a particle accelerator, comprises at least one previously described RF amplifier arrangement. The acceleration of charged particles is not only necessary in a particle accelerator, but can also be used in a plasma process. In a plasma process, charged atoms are accelerated. This allows, for example, industrial plasma coating processes, etching processes, or gas laser excitation to be operated.
[0096] In one aspect, the arrangement for accelerating charged particles comprises at least one RF resonator. The at least one RF amplifier arrangement is connected to the at least one RF resonator for transmitting the amplified RF signal.
[0097] The development is described below purely by way of example with reference to the drawings. They show:
[0098] Figure 1: an embodiment of a transformation module in exploded view;
[0099] Figure 2A: an embodiment of the first outer layer;
[0100] Figure 2B: an embodiment of the first intermediate layer; Figure 2C: an embodiment of the second intermediate layer;
[0101] Figure 2D: an embodiment of the second outer layer;
[0102] Figure 3A: another embodiment of the first intermediate layer;
[0103] Figure 3B: another embodiment of the first outer layer;
[0104] Figure 4A: another embodiment of the first or second outer layer;
[0105] Figure 4B: another embodiment of the first intermediate layer;
[0106] Figure 5: an embodiment of an RF amplifier arrangement with the
[0107] Transformation module; and
[0108] Figure 6: an embodiment of the arrangement for accelerating charged particles with at least one RF amplifier arrangement.
[0109] Figure 1 shows an embodiment of a transformation module 1. The transformation module 1 serves to transform a first input impedance at a first transformation module connection 2a to a second input impedance at a second transformation module connection 2b for use in an RF amplifier arrangement 50, in particular a push-pull amplifier arrangement, preferably for an arrangement 100 for accelerating charged particles, wherein the transformation module 1 has a multi-layer structure.
[0110] The transformation module 1 comprises a multilayer planar substrate 3. The substrate 3 has a first outer layer 4, a second outer layer 5, a first intermediate layer 6, and, in this case, a second intermediate layer 7. The dielectric layers of the substrate 3 are not shown.
[0111] An outer conductor 8 having a first outer conductor layer 9 and a second outer conductor layer 10 is arranged on or in the substrate 3, wherein the first outer conductor layer 9 is arranged on or in the first outer layer 4 in the form of a first planar outer conductor winding with a first end 9a and second end 9b, and wherein the second outer conductor layer 10 is arranged on or in the second outer layer 5 in the form of a second planar outer conductor winding with a first end 10a and second end 10b. The first and second outer conductor layers 9, 10 are arranged parallel but spaced from one another. The first and second outer conductor layers 9, 10 are electrically conductive.
[0112] The first outer conductor layer 9 and the second outer conductor layer 10 are galvanically connected to one another, wherein the respective first ends 9a, 10a of the first and second outer conductor layers 9, 10 form a first outer conductor terminal 11a of the first transformation module terminal 2a and wherein the respective second ends 9b, 10b of the first and second outer conductor layers 9, 10 form a second outer conductor terminal 11b of the first transformation module terminal 2a.
[0113] Furthermore, an inner conductor 12 with an inner conductor track 13 is arranged on or in the substrate. The inner conductor track 13 runs in a planar inner conductor winding, wherein at least a first part 14a of the planar inner conductor winding is arranged in the first intermediate layer 6 and wherein the inner conductor track 13 is covered by the first outer conductor layer 9 in the direction of the first outer layer 4 and by the second outer conductor layer 10 in the direction of the second outer layer 5. A second part 14b of the planar inner conductor winding is arranged in the second intermediate layer 7. The inner conductor 12 with its inner conductor track 13 is electrically conductive. The inner conductor track 13 comprises a first inner conductor end 13a and a second inner conductor end 13b, wherein the two inner conductor ends 13a, 13b form the second transformation module connection 2b.The first inner conductor end 13a is arranged on the first intermediate layer 6 and the second inner conductor end 13b is arranged on the second intermediate layer 7.
[0114] The first and second planar outer conductor windings and the planar inner conductor winding are arranged predominantly overlapping one another in plan view, so that a predetermined electrical and magnetic coupling is established between the first and second planar outer conductor windings and the planar inner conductor winding.
[0115] An outer conductor connection arrangement 15 is arranged on or in the substrate 3, which galvanically connects the first outer conductor layer 9 and the second outer conductor layer 10 to one another in such a way that the outer conductor connection arrangement 15 together with the first outer conductor layer 9 and the second outer conductor layer 10 forms an outer conductor sheath, which encloses the planar inner conductor winding of the inner conductor track 13 of the inner conductor 12 to a predominant extent in an HF-tight manner.
[0116] The outer conductor connection arrangement 15 is arranged here at the outer region of the first outer conductor layer 9 and the second outer conductor layer 10. The substrate 3 can be imagined here with dimensions as large as the first outer conductor layer 9 or the second outer conductor layer 10. Thus, the outer conductor connection arrangement 15 would also be arranged at the outer region of the substrate 3.
[0117] The outer conductor connection arrangement 15 is illustrated here as being only partially arranged at the outer region of the first outer conductor layer 9 and the second outer conductor layer 10. This illustration is intended for clarity. It is conceivable that the outer conductor connection arrangement 15 is arranged around a large part or even almost entirely at the outer region of the first outer conductor layer 9 and the second outer conductor layer 10 or of the substrate 3.
[0118] In this case, the inner conductor track 13 of the inner conductor 12 has a width that is smaller than the width of the first and second outer conductor layers 9, 10.
[0119] The first outer conductor layer 9 defines a center 16 of the first outer layer 4 with its first planar outer conductor turn. The first outer conductor layer 9 with its first planar outer conductor turn runs in a loop around the center 16 of the first outer layer 4. The second outer conductor layer 10 defines a center 16 of the second outer layer 5 with its second planar outer conductor turn. The second outer conductor layer 10 with its second planar outer conductor turn runs in a loop around the center 16 of the second outer layer 5. The first part 14a of the inner conductor track 13 defines a center 17 of the first intermediate layer 6. The first part 14a of the inner conductor track 13 runs in 1.5 loops around the center 17 of the first intermediate layer 6. The second part 14b of the inner conductor track 13 defines a center 17 of the second intermediate layer 7. The second part 14b of the inner conductor track 13 runs in 1.5 loops around the center 17 of the second intermediate layer 7.This results in an overall transformation ratio of 1:9. In this case, the first part 14a of the planar inner conductor winding of the inner conductor track 13 has the same number of loops as the second part 14b of the planar inner conductor winding of the inner conductor track 13.
[0120] The first planar outer conductor winding of the first outer conductor layer 9 is separated by an interruption 18, forming the first and second ends 9a, 9b. The second planar outer conductor winding of the second outer conductor layer 10 is separated by an interruption 18, forming the first and second ends 10a, 10b. In this case, the interruptions 18 of the first and second outer conductor layers 9, 10 are arranged overlapping one another in plan view.
[0121] In a top view of the interruption 18 of the first or second outer conductor layer 9, 10, the first and / or second part 14a, 14b of the planar inner conductor winding of the inner conductor 13 crosses the interruption 18 of the first or second outer conductor layer 9, 10 at a right angle on the first or second intermediate layer 6, 7. The angle is right-angled here, but of course, it doesn't have to be. Angles in the range of 45° - 90° are also possible, with 90° being the most suitable.
[0122] The first part 14a of the planar inner conductor winding of the inner conductor 13 runs on the first intermediate layer 6 in the same direction as the second part 14b of the planar inner conductor winding of the inner conductor 13 on the second intermediate layer 7. In this case, both the first part 14a and the second part run clockwise around the respective center 17.
[0123] The substrate 3 comprises a via 19 through which the inner conductor track 13 transitions from the first intermediate layer 6 to the second intermediate layer 7. The transition from the first part 14a to the second part 14b of the planar inner conductor winding of the inner conductor 13 then occurs at or in the region of the via 19.
[0124] Figure 2A shows a top view of the first outer layer 4 with the first outer conductor layer 9 of the outer conductor 8 from Figure 1. In a top view, the first outer conductor layer 9 is rectangular. The transformation module 1 further comprises a supply connection 20, in particular in the form of a DC voltage connection. The supply connection 20 is connected to the first outer conductor layer 9 at a feed point 21, wherein the feed point 21 is arranged opposite the respective interruption 18, whereby a straight line 22 running through the respective interruption 18 also runs through the feed point 21.
[0125] Figure 2B shows a plan view of the first part 14a of the planar inner conductor winding of the inner conductor track 13 of the inner conductor 12 from Figure 1. The first part 14a extends with 1.5 loops around the center 17 of the first intermediate layer 6.
[0126] Figure 2C shows a plan view of the second part 14b of the planar inner conductor winding of the inner conductor track 13 of the inner conductor 12 from Figure 1. The second part 14b extends with 1.5 loops around the center 17 of the second intermediate layer 7.
[0127] Figure 2D shows a top view of the second outer layer 5 with the second outer conductor layer 10 of the outer conductor 8 from Figure 1. In a top view, the second outer conductor layer 10 is rectangular. The transformation module 1 further comprises a supply connection 20, in particular in the form of a DC voltage connection. The supply connection 20 is connected to the second outer conductor layer 10 at a feed point 21, wherein the feed point 21 is arranged opposite the respective interruption 18, whereby a straight line 22 running through the respective interruption 18 also runs through the feed point 21.
[0128] Figures 3A and 3B show an embodiment of the transformation module 1, wherein the substrate 3 comprises only the first intermediate layer 6 together with the first and second outer layers 4, 5. The substrate 3 comprises the via 19 through which the inner conductor track 13 changes from the first intermediate layer 6 to the first outer layer 4. It could also change to the second outer layer 5. A second part 14b of the planar inner conductor turn of the inner conductor track 13 runs partially or completely through the interruption 18 of the first outer conductor layer 9 on the first outer layer 4, wherein the second part 14b of the planar inner conductor turn of the inner conductor track 13 changes via a further via 23 from the first outer layer 4 back to the first intermediate layer 6, but preferably runs at a greater distance from the center 17 of the first intermediate layer 6 than directly before the change to the first outer layer 4 orthan the first part 14a of the planar inner conductor winding of the inner conductor track 13 directly before the change to the first outer layer 4. As a result, the inner conductor 12 is also led out of the first intermediate layer 6 again. In this case, both the first inner conductor end 13a and the second inner conductor end 13b of the inner conductor 12 rest against the first intermediate layer 6. Furthermore, the first inner conductor end 13a and the second inner conductor end 13b of the inner conductor track 13 are arranged on the same side of the substrate 3. In this case, the first part 14a comprises 1.5 loops and the second part 0.5 loops, whereby the inner conductor 12 runs in a total of 2 loops around the center 17 of the first and second intermediate layers 6, 7. This results in a transformation ratio of 1:4.
[0129] Figure 4A shows a further embodiment of the first and / or second outer layer 4, 5. The outer conductor connection arrangement 15 is shown hatched. The outer conductor connection arrangement 15 comprises a plurality of vias that galvanically connect the first outer conductor layer 9 to the second outer conductor layer 10. Additionally or alternatively, the outer conductor connection arrangement 15 comprises an electrically conductive connection, in particular a galvanization, which is arranged at the edge of the substrate 3 and galvanically connects the first outer conductor layer 9 to the second outer conductor layer 10.
[0130] Preferably, the plurality of vias of the outer conductor connection arrangement 15 follow an inner boundary line 24 and an outer boundary line 25, with the inner conductor track 13 running between the inner and outer boundary lines 24, 25, whereby the inner conductor track 13 is electromagnetically shielded in this region. The outer conductor connection arrangement 15 comprises at least two interruptions 26, which are arranged at a distance from one another at the edge of the substrate 3. The inner conductor track 13 emerges with its first and second inner conductor ends 13a, 13b from these interruptions 26 on the first intermediate layer 6 and the optional second intermediate layer 7. At the interruptions 26, there are no vias between the first and second outer layers 4, 5.
[0131] Figure 4B shows a further embodiment of the first intermediate layer 6 with the first part 14a of the inner conductor track 13 of the inner conductor 12. In this case, the substrate 3 comprises a plurality of additional vias 27, wherein the additional vias 27 galvanically connect the first outer conductor layer 9 to the second outer conductor layer 10 and thus also extend through the first intermediate layer 6 and the optional second intermediate layer 7. The additional vias 27 extend between two loops of the first part 14a of the planar inner conductor winding of the inner conductor track 13. As a result, these two loops are optimally decoupled from each other.
[0132] Figure 5 shows the RF amplifier arrangement 50, in particular in the form of a push-pull amplifier arrangement, with a first transistor 51, a second transistor 52, and the transformation module 1. The RF amplifier arrangement 50 comprises a signal input 53 to which an RF signal to be amplified can be applied, wherein the signal input 53 is connected to the first inner conductor end 13a of the inner conductor track 13 of the inner conductor 12. The second inner conductor end 13b of the inner conductor track 13 of the inner conductor 12 is connected to a reference ground 54. The respective first ends 9a, 10a of the first and second outer conductor layers 9, 10 are connected to a gate terminal of the first transistor 51 via a first connection 55. The respective second ends 9b, 10b of the first and second outer conductor layers 9, 10 are connected to a gate terminal of the second transistor 52 via a second connection 56.The RF amplifier arrangement 50 comprises a supply input 57, which is connected to a supply terminal 20 on the first and / or second outer conductor layer 9, 10 of the transformation module 1. A DC voltage is preferably supplied to the supply input 57 to supply the first and second transistors 51, 52.
[0133] The RF amplifier arrangement 50 comprises a first impedance matching circuit 58 for transforming the input impedance at the first outer conductor terminal 11a of the first transformation module terminal 2a of the transformation module 1 to an input impedance of the first transistor 51. The first impedance matching circuit 58 comprises corresponding capacitances and inductances for this purpose. The first impedance matching circuit 58 is arranged in the first connection 55.
[0134] The RF amplifier arrangement 50 further comprises a second impedance matching circuit 59 for transforming the input impedance at the second outer conductor terminal 11b of the first transformation module terminal 2a of the transformation module 1 to an input impedance of the second transistor 52. The second impedance matching circuit 59 comprises corresponding capacitances and inductances for this purpose. The second impedance matching circuit 59 is arranged in the second connection 56.
[0135] Furthermore, the emitter terminals of the first and second transistors 51, 52 are preferably connected to a reference ground. A first signal output 60 is connected to the collector terminal of the first transistor 51. A second signal output 61 is connected to the collector terminal of the second transistor 52. A transformation module, not shown here, can also be designed for high powers, in particular greater than or equal to 200 W, and in particular can be designed for connection to the first signal output 60 and to the second signal output 61 of an RF amplifier arrangement 50 as described above.Thus, the differential signal outputs 60, 61 of an RF amplifier arrangement 50 can be formed into an asymmetrical output between an RF power signal with the previously described high power, in particular greater than or equal to 200 W, in which one connection can be connected to a reference ground 54 and the other connection can be connected as an RF signal to a load.
[0136] Specifically, one can imagine that a correspondingly designed transformation module 1 is connected with the first ends 9a, 10a to the first signal output 60 and with the second ends 9b, 10b to the second signal output 61.
[0137] Here too, the supply connection 20 can preferably be used to supply a DC supply to the RF amplifier arrangement 50.
[0138] The inner conductor 12 can be connected to a load with its first inner conductor end 13a as an RF signal.
[0139] The inner conductor 12 can be connected to reference ground with its second inner conductor end 13b.
[0140] This allows the load to be operated between the RF power signal and reference ground, as is usually desired.
[0141] Figure 6 shows an arrangement 100 for accelerating charged particles, particularly in the form of a particle accelerator. In this case, the arrangement 100 comprises a plurality of RF amplifier arrangements 50 arranged in a rack system 101. The arrangement 100 comprises a plurality of RF resonators 102. The respective RF resonators 102 are preferably connected to the first and second signal outputs 60, 61 of the RF amplifier arrangement 50. The development is not limited to the described embodiments.
[0142] During development, all described and / or drawn features can be combined with each other as desired, unless otherwise stated.
Claims
Claims 1. Transformation module (1) for transforming a first input impedance at a first transformation module connection (2a) to a second input impedance at a second transformation module connection (2b) for use in an RF amplifier arrangement (50), in particular a push-pull amplifier arrangement, preferably for an arrangement (100) for accelerating charged particles, wherein the transformation module (1) has a multi-layer structure and comprises the following features: - a multi-layer planar substrate (3) is provided, in particular a printed circuit board, comprising a first outer layer (4), a second outer layer (5) and a first intermediate layer (6) arranged between the first and second outer layers (4, 5), - an outer conductor (8) with a first outer conductor layer (9) and a second outer conductor layer (10) is arranged on or in the substrate (3), wherein the first outer conductor layer (9) is arranged on or in the first outer layer (4) in the form of a first planar outer conductor winding with a first and second end (9a, 9b) and wherein the second outer conductor layer (10) is arranged on or in the second outer layer (5) in the form of a second planar outer conductor winding with a first and second end (10a, 10b); - the first outer conductor layer (9) and the second outer conductor layer (10) are galvanically connected to one another, wherein the respective first ends (9a, 10a) of the first and second outer conductor layers (9, 10) form a first outer conductor terminal (11a) of the first transformation module terminal (2a) and wherein the respective second ends (9b, 10b) of the first and second outer conductor layers (9, 10) form a second outer conductor terminal (11b) of the first transformation module terminal (2a); - an inner conductor (12) with an inner conductor track (13) is arranged on or in the substrate (3); - the inner conductor track (13) runs in a planar inner conductor winding, wherein at least a first part (14a) of the planar inner conductor winding is arranged in the first intermediate layer (6) and wherein the inner conductor track (13) is covered by the first outer conductor layer (9) in the direction of the first outer layer (4) and by the second outer conductor layer (10) in the direction of the second outer layer (5); - the inner conductor track (13) comprises a first inner conductor end (13a) and a second inner conductor end (13b), wherein the two inner conductor ends (13a, 13b) form the second transformation module connection (2b); - the first and second planar outer conductor windings and the planar inner conductor winding are arranged predominantly overlapping one another in plan view, so that a predetermined electrical and magnetic coupling is established between the first and second planar outer conductor windings and the planar inner conductor winding; - an outer conductor connection arrangement (15) is arranged on or in the substrate (3), which outer conductor connection arrangement galvanically connects the first and the second outer conductor layer (9, 10) to one another in such a way that the outer conductor connection arrangement (15) together with the first and second outer conductor layer (9, 10) forms an outer conductor sheath, which encloses the planar inner conductor winding of the inner conductor track (13) of the inner conductor (12) in a predominantly RF-tight manner.
2. Transformation module (1) according to claim 1, characterized by the following feature: - the outer conductor connection arrangement (15) is at least partially, preferably predominantly, arranged on an outer region of at least one of the following: o the planar substrate (3), o the first outer conductor layer (9) or o the second outer conductor layer (10).
3. Transformation module (1) according to one of claims 1 or 2, characterized by the following feature: - the transformation module (1) is operable in a frequency range from 40 MHz to 400 MHz and in particular in a frequency range from 100 MHz to 200 MHz.
4. Transformation module (1) according to one of the preceding claims, characterized by the following feature: - the inner conductor track (13) has a width which is smaller than the width of the first and second outer conductor layers (9, 10).
5. Transformation module (1) according to one of the preceding claims, characterized by the following features: - the substrate (3) comprises a second intermediate layer (7), wherein the first intermediate layer (6) and the second intermediate layer (7) are arranged between the first and second outer layers (4, 5); - the inner conductor track (13) is also arranged on the second intermediate layer (7).
6. Transformation module (1) according to claim 5, characterized by the following features: - the substrate (3) comprises a through-plating (19) through which the inner conductor track (13) changes from the first intermediate layer (6) to the second intermediate layer (7).
7. Transformation module (1) according to claim 5 or 6, characterized by the following features: - at least a second part (14b) of the planar inner conductor winding of the inner conductor track (13) is arranged in the second intermediate layer (7), wherein the inner conductor track (13) is covered by the first outer conductor layer (9) in the direction of the first outer layer (4) and by the second outer conductor layer (10) in the direction of the second outer layer (5).
8. Transformation module (1) according to one of the preceding claims, characterized by the following feature: - the first inner conductor end (13a) and the second inner conductor end (13b) of the inner conductor track (13) are arranged on the same side on the substrate (3).
9. Transformation module (1) according to one of the preceding claims, characterized by the following features: - Outer conductor connection arrangement (15) comprises a plurality of vias which galvanically connect the first outer conductor layer (9) to the second outer conductor layer (10); and / or - Outer conductor connection arrangement (15) comprises an electrically conductive connection, in particular a galvanization, which is arranged at the edge of the substrate (3) and galvanically connects the first outer conductor layer (9) to the second outer conductor layer (10).
10. RF amplifier arrangement (50), in particular in the form of a push-pull amplifier arrangement, with a first transistor (51), a second transistor (52) and a transformation module (1), which is constructed according to one of the preceding claims, with the following features: - a signal input (53) is provided to which an RF signal to be amplified can be applied, the signal input (53) being connected to the first inner conductor end (13a) of the inner conductor track (13); - the second inner conductor end (13b) of the inner conductor track (13) is connected to a reference ground; - the respective first ends (9a, 10a) of the first and second outer conductor layers (9, 10) are connected via a first connection (55) to a gate terminal of the first transistor (51); - the respective second ends (9b, 10b) of the first and second outer conductor layers (9, 10) are connected to a gate terminal of the second transistor (52) via a second connection (56).
11. RF amplifier arrangement (50) according to claim 10, characterized by the following feature: - a supply input (57) is provided which is connected to a supply terminal (20) on the first and / or second outer conductor layer (9, 10) of the transformation module (1).
12. Arrangement (100) for accelerating charged particles, in particular in the form of a particle accelerator, wherein the arrangement comprises at least one RF amplifier arrangement (50) constructed according to one of claims 10 to 11.