Micro LED with apertured current flow
EP4772011A1Pending Publication Date: 2026-07-08LUMILEDS LLC
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- LUMILEDS LLC
- Filing Date
- 2024-08-21
- Publication Date
- 2026-07-08
AI Technical Summary
Technical Problem
AllnGaP micro-LEDs experience high Shockley-Read-Hall (SRH) non-radiative recombination at sidewall defect sites due to plasma dry etching, leading to reliability degradation as device size decreases.
Method used
The implementation of epitaxial stacks with n-type and p-type confinement layers having widths less than the active region width, which are treated to form confinement layers on the mesa sidewalls, effectively restricts carrier flow away from sidewall defects.
Benefits of technology
This approach significantly reduces SRH non-radiative recombination at sidewall defect sites, enhancing the reliability and external quantum efficiency of AllnGaP micro-LEDs, particularly for smaller mesa sizes.
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Smart Images
Figure US2024043232_06032025_PF_FP_ABST
Abstract
Described are light emitting diode (LED) arrays comprising a plurality of mesas defining pixels having sidewalls, each of the mesas comprising an epitaxial stack on a substrate. The epitaxial stack includes a first n-type layer on the substrate, a second n-type layer on the first n-type layer, an n-type confinement layer on the second n-type layer, an active region having an active region width on the n-type confinement layer, a p-type confinement layer on the active region, a second p-type layer on the p-type confinement layer. The n-type confinement layer and the p-type confinement layer independently have a width less than the active region.
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