Diode matrix growth substrate, comprising mesas exhibiting different levels of porification
A growth substrate with categorized mesas and controlled porosification simplifies the manufacturing of diode matrices, allowing for efficient native emission of light at different wavelengths by omitting complex dopant implantation steps.
FR3141558B1Active Publication Date: 2025-12-05COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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Patent Information
- Application Number
- FR2022011333
- Authority / Receiving Office
- FR · FR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-10-28
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2042-10-28
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Abstract
The invention relates to a growth substrate adapted for the epitaxial fabrication of an InGaN-based diode array, comprising mesas M(i) made of GaN-based crystalline materials, each mesas having N doped layers (13, 15), with N ≥ 2, separated in pairs by an intermediate insulating layer (14) made of a non-porous material, and each having a free upper face adapted for the epitaxial fabrication of a diode of the array; the mesas being configured according to at least three different categories, including: a category of mesas called M(N) where the N doped layers (13, 15) are porous; a category of mesas called M(0) where none of the doped layers (13, 15) are porous; and a category of mesas called M(n) where n doped layers (13, 15) are porous, with 1 ≤ n
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