Electronic device for capturing infrared radiation and displaying images

Abstract

Electronic Device for Infrared Radiation Capture and Image Display This description relates to an electronic device (100) for capturing and displaying images comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – a detection element (103) for organic and / or quantum dot-based infrared radiation (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for visible light (109), located on the side of a second face (101R) of the semiconductor substrate opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element. Figure for the abstract: Fig. 1

Description

Title of the invention: Electronic device for capturing infrared radiation and displaying images. Technical field

[0001] This description relates generally to electronic devices, and in particular to electronic devices for capturing and displaying images. Previous technique

[0002] Electronic devices capable of implementing image capture and display functions have been proposed. Such devices typically include an image sensor, comprising an image capture pixel array, and an image display, comprising an image display pixel array distinct from the image capture pixels.Depending on the application, the image capture and display pixel arrays of the device may be located on one side of the same face of a semiconductor substrate, for example in the case of a mobile phone, smartwatch or tablet computer including a display screen incorporating an image sensor for acquiring a user's fingerprints, or may be located on opposite sides of the semiconductor substrate, for example in the case of a head-mounted display, head-up display or smart glasses including one or more display screens intended to be placed each in front of a user's eye and one or more image sensors facing outwards.

[0003] Existing electronic image capture and display devices, however, suffer from various drawbacks. In particular, in these devices, the pixels of the image sensor are typically connected to a control circuit and a readout circuit, and the pixels of the image display are connected to a control circuit different from the control and readout circuits for the pixels of the image sensor. These circuits, which are, for example, located on the periphery of the pixel arrays of the sensor and the image display, implement addressing functions for the pixel arrays to which they are respectively connected, and the images acquired by the sensor are, for example, stored in a memory circuit before being displayed, possibly after processing. This introduces an undesirable latency between the acquisition of an image by the sensor and the display of the corresponding image by the display.Furthermore, existing electronic image capture and display devices are complex, bulky, heavy, energy-intensive, and expensive to manufacture. Summary of the invention

[0004] It would be desirable to overcome all or part of the drawbacks of existing electronic image capture and display devices. In particular, there is a need to reduce the weight, size, complexity, energy consumption, manufacturing costs and / or latency of these devices.

[0005] To this end, one embodiment provides an electronic image capture and display device comprising a plurality of pixels formed in and on a semiconductor substrate, each pixel comprising: - an element for detecting organic and / or quantum dot-based infrared radiation, located on the side of a first face of the semiconductor substrate; - a visible light emission element, located on the side of a second face of the semiconductor substrate opposite the first face; and - a circuit located in and on the semiconductor substrate and connecting the sensing element to the emitting element.

[0006] According to one embodiment, the circuit comprises: - an acquisition circuit located in and on the semiconductor substrate and adapted to provide an acquisition signal representative of the intensity of the infrared radiation received by the pixel's detection element; and - a control circuit located in and on the semiconductor substrate and adapted to apply a control signal to the emitting element of the pixel.

[0007] According to one embodiment, the acquisition circuit and the control circuit are analog circuits.

[0008] According to one embodiment: - each detection element includes a photodetector comprising an active layer based on at least one organic material and / or quantum dots; - each acquisition circuit includes a comparator having an inverting input connected to a conduction electrode of the photodetector; and - each control circuit includes an inverter having an input connected to an output of the comparator and an output connected to a gate of a MOS transistor, the MOS transistor having a conduction electrode connected to the emitting element.

[0009] According to one embodiment, the detection elements are located opposite the emission elements.

[0010] According to one embodiment, the detection elements and the emission elements are arranged respectively in first and second matrices, the first and second matrices having substantially identical steps.

[0011] According to one embodiment, each emission element comprises at least one light-emitting diode.

[0012] According to one embodiment, the light-emitting diode is controlled by a control signal having an average value substantially proportional to an intensity of the infrared radiation detected by the detection element.

[0013] According to one embodiment, the light-emitting diode is controlled by a control signal having pulses repeating at a frequency substantially proportional to an intensity of the infrared radiation detected by the detection element.

[0014] According to one embodiment, the device comprises as many detection elements as emission elements.

[0015] According to one embodiment, the pixels are divided into elementary groups, each comprising: - at least one first pixel whose detection element is sensitive mainly in a first range of infrared radiation wavelengths and whose emission element is adapted to emit mainly visible light in a second range of wavelengths, preferably blue light; - at least a second pixel whose detection element is predominantly sensitive in a third range of infrared wavelengths different from the first range, and whose emission element is adapted to emit predominantly visible light in a fourth range of wavelengths different from the second range, preferably green light; and - at least a third pixel whose detection element is sensitive mainly in a fifth range of infrared radiation wavelengths different from the first and third ranges, and whose emission element is adapted to emit mainly visible light in a sixth range of wavelengths different from the second and fourth ranges, preferably red light.

[0016] One embodiment provides for an electronic device comprising: - a power supply circuit; and - at least one device as described above.

[0017] One embodiment provides a method for manufacturing such a device as described previously, the process includes a step of transferring, by molecular bonding, a structure comprising the detection elements and circuits onto another structure comprising the emission elements. Brief description of the drawings

[0018] These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the accompanying figures, among which:

[0019] [Fig.1] is an isometric, schematic and partial view of an image capture and display device according to one embodiment;

[0020] [Fig.2] is an equivalent electrical diagram of a pixel of the device of [Fig.1] according to one embodiment;

[0021] [Fig.3] is an equivalent electrical diagram of a pixel of the device of [Fig.1] according to another embodiment;

[0022] [Fig.4] is a chronogram illustrating, schematically and partially, an example of the operation of the pixel of [Fig.3];

[0023] [Fig.5] is an equivalent electrical diagram of several pixels of the device of [Fig.1] according to another embodiment;

[0024] [Fig. A], [Fig. B], [Fig. C], [Fig. D], [Fig. E], [Fig. F] and [Fig. G] illustrate, by schematic and partial cross-sectional views, structures obtained at the end of steps in a manufacturing process of the device of [Fig. 1] according to an embodiment;

[0025] [Fig.7A] and [Fig.7B] illustrate, by means of schematic and partial cross-sectional views, structures obtained at the end of steps in a manufacturing process of the device of [Fig.1] according to another embodiment;

[0026] [Fig. 8] is a schematic and partial side view of an example of the implementation of the device of [Fig. 1] in an electronic device; and

[0027] Figure 9 is a schematic and partial side view of another example of the implementation of the device in Figure 1 in an electronic device. Description of embodiments

[0028] The same elements have been designated by the same reference numerals in the different figures. In particular, structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties.

[0029] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been shown and are detailed. In particular, the various applications of the electronic image capture and display devices in this description will not be detailed, as the described embodiments are compatible with all or most applications that could benefit from an electronic image capture and display device, possibly with adaptations that are understandable to a person skilled in the art upon reading this description.

[0030] Unless otherwise specified, when referring to two interconnected elements, this means directly connected without any intermediate elements other than conductors, and when referring to two connected (in English, "coupled") elements, this means directly connected without any intermediate elements other than conductors, and when referring to two connected (in English, "coupled") elements, this means directly connected without any intermediate elements other than conductors. " between them, this means that these two elements can be connected or linked via one or more other elements.

[0031] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "superior", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0032] Unless otherwise specified, the expressions "approximately", "about", "substantially", and "in the order of" mean within 10%, preferably within 5%.

[0033] In the following description, the terms "insulating" and "conducting" mean, unless otherwise specified, electrically insulating and electrically conductive respectively.

[0034] The term "transmittance of a layer" refers to the ratio of the intensity of radiation exiting the layer to the intensity of radiation entering the layer. In the following description, a layer is said to be opaque to radiation when its transmittance for that radiation is strictly less than 40%, preferably less than or equal to 25%, and more preferably less than or equal to 10%. Conversely, a layer is said to be transparent to radiation when its transmittance for that radiation is greater than or equal to 40%, preferably greater than or equal to 75%, and more preferably greater than or equal to 90%. The preceding definitions of the terms opaque and transparent are not limited to the case of a single layer, but apply more generally to any element that may be exposed to radiation, for example, a substrate, a region, a stack of several layers, etc.

[0035] In this description, the term "visible light" refers to electromagnetic radiation with a wavelength between 400 nm and 700 nm. Furthermore, the term "infrared radiation" refers to electromagnetic radiation with a wavelength between 700 nm and 1 mm. In the infrared range, near-infrared radiation has a wavelength between 700 nm and 1.7 μm.

[0036] The [Fig.1] is an isometric, schematic and partial view of an image capture and display device 100 according to one embodiment.

[0037] According to this embodiment, the image capture and display device 100 comprises a plurality of PIX pixels formed in and on a semiconductor substrate 101.

[0038] Each pixel PIX of the device 100 comprises a detection element 103 for radiation 105 and, associated with the detection element 103, an emission element 107 for radiation 109. The detection elements 103 and emission elements 107 are respectively located on either side of the semiconductor substrate 101. More precisely, in the illustrated example, the detection elements 103 are located on the side of a face 101F of the substrate 101, and the emission elements 107 are located on the side of a face 101R of the substrate 101, opposite face 101F. For the sake of simplicity in the drawing, each detection element 103 and each emission element 107 has been symbolized, in [Fig. 1], by a parallelepiped having, in top view, a perimeter that is substantially square. This example is not, however, limiting; each detection element 103 or emission element 107 could, alternatively, have any shape, for example, cylindrical. As an example, the detection element 103 is of the organic type and / or based on quantum dots.

[0039] The term "active region" of an optoelectronic component, particularly an electroluminescent component of a display subpixel or a photodetector, refers to a region from which the majority of the electromagnetic radiation supplied by the optoelectronic component is emitted or the region from which the majority of the electromagnetic radiation received by the optoelectronic component is captured. An optoelectronic component is said to be organic when the active region of the optoelectronic component is made primarily, and preferably entirely, of at least one organic material or a mixture of organic materials. An optoelectronic component is said to be quantum dot-based when the active region of the optoelectronic component comprises quantum dots.

[0040] In the illustrated example, the PIX pixels of the device 100 are arranged in a matrix of rows and columns. More precisely, in this example, the detection elements 103 are arranged in a matrix of rows and columns. Similarly, the emission elements 107 are, in this example, arranged in a matrix of rows and columns. In each of these matrices, the rows are, for example, substantially orthogonal to the columns. This example is not limiting, however; alternatively, the rows may not be orthogonal to the columns.

[0041] By way of example, the device 100 comprises as many detection elements 103 as emission elements 107.

[0042] In the example shown, the emission element matrix 107 has a pitch, that is, a center-to-center distance between two adjacent emission elements 107, substantially equal to the pitch of the detection element matrix 103, that is, substantially equal to a center-to-center distance between two adjacent detection elements 103. Furthermore, in this example, the emission elements 107 are located opposite the detection elements 103. In the illustrated example, the center of each emission element 107 is located substantially directly above the center of the opposite detection element 103. The emission elements 107 have, for example, Viewed from above, the lateral dimensions are substantially equal, within manufacturing variations, to those of the detection elements 103. This example is not limiting, however, as the emission elements 107 may, as an alternative, have different lateral dimensions, for example larger or smaller, than those of the detection elements 103. The respective dimensions, for example the respective surfaces, of the detection elements 103 and emission elements 107 are chosen, for example, according to a desired sensitivity on the side of the detection elements 103 and / or an intensity to be achieved on the side of the emission elements 107.

[0043] By way of example, the radiation 105 captured by the detection elements 103 is infrared radiation, for example near-infrared radiation. Furthermore, the radiation 109 emitted by the emission elements 107 is, for example, visible light.

[0044] The [Fig.2] is an equivalent electrical diagram of a pixel PIX of the device 100 of the [Fig.1] according to one embodiment.

[0045] In the example shown, the detection element 103 of the pixel PIX includes a photodetector 201 adapted to capture the radiation 105. The photodetector 201 is, for example, adapted to produce, under the effect of the incident radiation 105, a current Iph, also called photocurrent. The photocurrent Iph is, for example, substantially proportional to an intensity, or flux, of the radiation 105 captured by the photodetector 201. In the illustrated example, the photodetector 201 has a first conduction terminal, for example an anode electrode, connected to a node 203 for applying a reference potential, for example ground. The photodetector 201 further includes, in this example, a second conduction terminal, for example a cathode electrode, connected to a circuit 205. By way of example, the photodetector 201 is a photosensitive diode, or photodiode.

[0046] In the illustrated example, the circuit 205 includes an acquisition circuit 207, also called a conditioner or conditioning circuit. The acquisition circuit 207 is, for example, adapted to provide an acquisition signal representative of the intensity of the radiation 105 captured by the photodetector 201. The acquisition signal produced by the acquisition circuit 207 is, for example, a function of the photocurrent Iph, for example, substantially proportional to the photocurrent Iph. Alternatively, the acquisition signal is a function of a voltage across the photodetector 201, for example, substantially proportional to this voltage.

[0047] The acquisition circuit 207 allows, for example, the amplification of the photocurrent Iph and the provision of a drive voltage for the emitting element 107. For these purposes, the acquisition circuit 207 includes, for example, an amplifier symbolized in [Fig. 2] by a transistor. As an example, the amplifier is of the CTIA type (from the English "Capacitive Trans-Impedance Amplifier").

[0048] In the example shown, the PIX pixel circuit 205 further includes a control circuit 209, or driving circuit. The control circuit 209 is, for example, adapted to apply a control signal to the transmitting element 107. The control signal provided by the control circuit 209 is, for example, a function of the acquisition signal, for example, substantially proportional to the acquisition signal.

[0049] In the example shown, the acquisition circuit 207 and the control circuit 209 each receive a calibration signal cal. The calibration signal cal allows, for example, compensation for manufacturing variations between the pixels PIX of the image capture and display device 100, for example, manufacturing variations affecting the detection element 103 and / or the emission element 107 of the pixels PIX. In practice, the acquisition circuit 207 receives, for example, a calibration signal different from that received by the control circuit 209. The calibration signal cal has, for example, a determined value for each pixel PIX, following a calibration step subsequent to the manufacturing steps of the image capture and display device 100. Alternatively, the calibration signal cal can be omitted.

[0050] In the illustrated example, the emitting element 107 of the PIX pixel includes a light-emitting diode 211 adapted to emit the radiation 109. The light-emitting diode 211 is, for example, more precisely adapted to emit the radiation 109 when it is traversed by a lied current, corresponding, for example, to the control signal applied by the control circuit 209. The lied current has, for example, an intensity substantially proportional to that of the photocurrent Iph, for example substantially proportional to the intensity of the radiation 105 captured by the photodetector 201. In the example illustrated in [Fig. 2], the light-emitting diode 211 has a first conduction terminal, for example an anode electrode, connected to the circuit 205, for example to an output of the control circuit 209.In this example, the light-emitting diode 211 also includes a second conduction terminal, for example a cathode electrode, connected to a node 213 for applying a potential -Vk, for example a low potential. The light-emitting diode 211 is, for example, an organic light-emitting diode. The diode 211 is, for example, of the micro-LED type, i.e., it has micrometer dimensions. In the case where the captured radiation 105 and the emitted radiation 109 are respectively infrared radiation and visible light, the light-emitting diode 211 is, for example, fitted with a color converter corresponding to a range of wavelengths transmitted by a filter above the associated photodetector 201.

[0051] In the case where the current lied has an intensity substantially proportional to that of the photocurrent Iph, the acquisition circuits 207 and control circuits 209 are by example of analog circuits. In this case, circuit 205 notably lacks an analog-to-digital converter.

[0052] Figure 3 is an equivalent electrical circuit of a PIX pixel of the device 100 of Figure 1 according to another embodiment. The equivalent electrical circuit illustrated in Figure 3 corresponds more precisely to a case in which the circuit 205 of the PIX pixel is adapted to control the emitting element 107 by a pulsed signal.

[0053] The diagram in [Fig. 3] includes elements in common with the diagram in [Fig. 2]. These common elements will not be detailed again below. In particular, the detection element 103 and the emission element 107 of the diagram in [Fig. 3] are, for example, identical to those of the diagram in [Fig. 2].

[0054] In the example shown, the acquisition circuit 207 of the PIX pixel includes a comparator 301 having an inverting input (-) connected to a node 303 of the acquisition circuit 207, a non-inverting input (+) connected to a node 305 for applying a reference potential Vref, and an output connected to a node 307 of the acquisition circuit 207. In the illustrated example, the cathode of the photodetector 201 is connected to node 303. Nodes 303 and 307 of the acquisition circuit 207 constitute, for example, input and output terminals of the acquisition circuit 207, respectively. In the illustrated example, nodes 303 and 307 have potentials Vsn and Vo, respectively.

[0055] In the example shown, the acquisition circuit 207 further includes a capacitive element 309, for example a capacitor, connecting node 303 to another node 311 for applying a reference potential, for example ground. The capacitor can be replaced or supplemented by a parasitic capacitance of node 303. In the illustrated example, the acquisition circuit 207 further includes a transistor 313, for example a MOS (Metal-Oxide-Semiconductor) transistor. In this example, the transistor 313 is more precisely an N-type MOS transistor (NMOS transistor). In the example shown, transistor 313 includes a conduction terminal, for example a source electrode, connected to node 303, another conduction terminal, for example a drain electrode, connected to a node 315 applying a supply potential Vdd, and a control terminal, for example a gate electrode, connected to node 307.The potential Vdd, for example, is strictly greater than the potential Vref.

[0056] In the illustrated example, the control circuit 209 comprises an inverter 317 and a transistor 319. The inverter 317 comprises, for example, an input connected to node 307 of the acquisition circuit 207 and an output connected to a control terminal, for example, a gate electrode, of the transistor 319. The transistor 319 is, for example, more precisely a P-type MOS transistor (PMOS transistor). In In the example shown, the PMOS transistor 319 includes a conduction terminal, for example a drain electrode, connected to the anode of the light-emitting diode 211 and another conduction terminal, for example a source electrode, connected to a node 321 for applying a supply potential Va.

[0057] By way of example, the light-emitting diode 211 is controlled by a control signal having an average value substantially proportional to the intensity of the radiation 105.

[0058] Figure 4 is a chronogram illustrating, schematically and partially, a example of the operation of the PIX pixel in [Fig.3]. The timing diagram in [Fig.4] includes curves 401 and 403 illustrating an example of the evolution, as a function of time (t), of the potentials Vsn and Vo, respectively.

[0059] Between a time t0 and a time tl, subsequent to time t0, the photodetector 201 is exposed to radiation 105 and produces the photocurrent Iph. During this period, the photocurrent Iph is integrated by the capacitive element 309. The charges photogenerated by the photodetector 201 accumulate at node 303, thus causing a decrease in the potential Vsn. In the illustrated example, the potential Vsn of node 303 has, between times t0 and tl, a value between that of the potential Vdd and that of the potential Vref. Between times t0 and tl, the potential Vo of node 307 connected to the output of comparator 301 is, for example, at a low level.

[0060] At time t1, the potential Vsn reaches a value approximately equal to that of the reference potential Vref. This causes the output of comparator 301 to switch, thus transitioning the potential Vo from a low level to a high level. Transistor 313 is then switched on, which connects node 303 to node 315. The photogenerated charges accumulated at node 303 between times t0 and t1 are thus discharged to node 315. This tends to bring the potential Vsn back to a value approximately equal to that of the supply potential Vdd.

[0061] At a time t2, later than time t1, the potential Vsn again becomes greater than the potential Vref. This causes the output of comparator 301 to switch, resulting in a transition of the potential Vo from the high level to the low level. Curve 403 thus illustrates a pulse of the potential Vo between times t1 and t2.

[0062] Between time t2 and a time t3, subsequent to time t2, curve 403 illustrates several other pulses of the potential Vo similar to that present between times t1 and t2. These pulses result, as explained above, from successive charges and discharges of the capacitive element 309 when the photodetector 201 is subjected to radiation 105 and produces the photocurrent Iph. The pulses comprising curve 403 between times t0 and t3 are repeated, for example, periodically, for example at a frequency fh.

[0063] Between an instant t4, subsequent to the instant t3, and an instant t5, subsequent to the instant t4, the curve 403 illustrates further impulses of the potential Vo, for example analogous to the impulses present between the instants t0 and t3.

[0064] The potential pulses Vo between times t4 and t5 differ, for example, from the potential pulses Vo between times t0 and t3 in that they repeat periodically at a frequency fl strictly lower than the frequency fh. This arises, for example, from the fact that the photodetector 201 produces, during an LF phase between times t4 and t5, a weaker photocurrent Iph, for example resulting from a decrease in the intensity of the radiation 105, than during another HF phase between times t0 and t3.

[0065] In the example shown, the frequencies fh and fl are representative of the photocurrent Iph, for example, substantially proportional to the photocurrent Iph. The frequencies fh and fl are, for example, substantially proportional to the intensity, or flux, of the radiation 105 captured by the photodetector 201. The light-emitting diode 211 is, for example, thus controlled by a periodic signal with a frequency substantially proportional to the intensity of the radiation 105 captured by the photodetector 201.

[0066] By way of example, the sensitivity of the PIX pixel is adjusted by modifying the value of the reference potential Vref, which limits the range of variation of the potential Vsn. In the example shown, for the same radiation intensity value 105, the closer the value of the potential Vref is to that of the potential Vdd, the higher the frequency of variation of the potential Vo. Conversely, the further the value of the potential Vref is from that of the potential Vdd, the lower the frequency of variation of the potential Vo.

[0067] The embodiments of the PIX pixel circuit 205 are not limited to the examples of the detection circuit 207 and control circuit 209 shown, and a person skilled in the art can, based on the information in this description, provide detection and control circuits different from those shown in relation to Figures 3 and 4. By way of example, a counter or a frequency divider can be provided in the control circuit 209 to allow adjustment of the frequency of variation of the potential Vo for each PIX pixel independently of the other PIX pixels. The adjustment is then carried out, for example, at the factory, for example, after manufacturing steps of the device 100, and involves, for example, a step of storing calibration values ​​in memory circuits of the device 100, for example, ROM (Read-Only Memory) or flash memory circuits.This avoids the need for addressing circuits in device 100. Other types of circuits, for example logarithmic response circuits, could also be used.

[0068] In the examples set out above, the image capture and display device 100 is devoid of addressing circuits for the detection element matrices 103 and emission elements 107. The device 100 is further devoid of circuits and components for storing, or memorizing, images acquired by the detection elements 103 or images to be displayed by the emission elements 107.

[0069] One advantage of device 100 is that it has a lower weight, size, complexity, energy consumption, manufacturing costs and / or latency than existing image capture and display devices.

[0070] Figure 5 is an equivalent electrical circuit of several pixels of device 100 of Figure 1 according to another embodiment. More precisely, Figure 5 is an equivalent electrical circuit of three pixels PIX-1, PIX-2, and PIX-3 of device 100.

[0071] The diagram in [Fig. 5] includes elements in common with the diagram in [Fig. 2]. These common elements will not be detailed again below.

[0072] The diagram in [Fig. 5] differs from the diagram in [Fig. 2] in that, in the diagram in [Fig. 5], pixels PIX-1, PIX-2, and PIX-3 are respectively adapted to capture infrared radiation 10⁵⁻¹, 10⁵⁻², and 10⁵⁻³ in different wavelength ranges. Furthermore, in the example shown, pixels PIX-1, PIX-2, and PIX-3 are adapted to emit visible light 10⁹⁻¹, 10⁹⁻², and 10⁹⁻³ in different wavelength ranges. This corresponds, for example, to a case in which the device 100 is capable of capturing and displaying multispectral images. As an example, device 100 in this case comprises elementary groups of pixels each comprising at least one PIX-1 pixel, at least one PIX-2 pixel and at least one PIX-3 pixel, for example exactly one PIX-1 pixel, two PIX-2 pixels and one PIX-3 pixel.

[0073] Analogously to the pixel PIX described above in relation to [Fig.2], each pixel PIX-1, PIX-2, PIX-3 of [Fig.5] comprises a detection element 103-1, 103-2, 103-3 including an infrared photodetector 201-1, 201-2, 201-3 adapted to capture predominantly the radiation 105-1, 105-2, 105-3. Each infrared photodetector 201-1, 201-2, 201-3 is, for example, adapted to produce, under the effect of the incident infrared radiation 105-1, 105-2, 105-3, a photocurrent Iphl, Iph2, Iph3 substantially proportional to an intensity of the infrared radiation 105-1, 105-2, 105-3. In the illustrated example, each infrared photodetector 201-1, 201-2, 201-3 has a first conduction terminal, for example an anode electrode, connected to node 203, and a second conduction terminal, for example a cathode electrode, connected to a circuit 205. For the sake of example, the infrared photodetectors 201-1, 201-2, 201-3 are photosensitive diodes, or photodiodes.

[0074] Each pixel PIX-1, PIX-2, PIX-3 includes, for example, the circuit 205 comprising the acquisition circuit 207 and the control circuit 209. Although this has not been detailed in [Fig.5] in order not to overload the drawing, the acquisition circuit 207 and the control circuit 209 of the circuit 205 of each pixel PIX-1, PIX-2, PIX-3 can receive the calibration signal cal.

[0075] In the illustrated example, each pixel PIX-1, PIX-2, PIX-3 further comprises an emission element 107-1, 107-2, 107-3 including a light-emitting diode 211-1, 211-2, 211-3 adapted to emit visible light 109-1, 109-2, 109-3. Each light-emitting diode 211-1, 211-2, 211-3 is, for example, more precisely adapted to emit the radiation 109-1, 109-2, 109-3 when it is traversed by a current Iledl, Iled2, Iled3, corresponding, for example, to the control signal applied by the control circuit 209. The current Iledl, Iled2, Iled3 has, for example, an intensity substantially proportional to that of the photocurrent Iphl, Iph2, Iph3, for example substantially proportional to the intensity of the infrared radiation 105-1, 105-2, 105-3 captured by the photodetector 201-1, 201-2, 201-3.In the illustrated example, each LED 211-1, 211-2, 211-3 has a first conduction terminal, for example an anode electrode, connected to circuit 205, for example to an output of control circuit 209. Each LED 211-1, 211-2, 211-3 also has, in this example, a second conduction terminal, for example a cathode electrode, connected to node 213. LEDs 211-1, 211-2, and 211-3 are, for example, organic LEDs. LEDs 211-1, 211-2, and 211-3 are, for example, micro-LEDs.

[0076] Figures 6A, 6B, 6C, 6D, 6E, 6F, and 6G illustrate, by means of schematic and partial cross-sectional views, structures obtained at the end of steps in a manufacturing process for device 100 of Fig. 1 according to one embodiment. The process of Figures 6A to 6G corresponds, for example, more precisely to a case in which device 100 comprises the pixels PIX of Fig. 2, all the pixels PIX of device 100 being, for example, adapted to capture infrared radiation 105 in the same first wavelength range and to emit visible light 109 in the same second wavelength range, apart from manufacturing variations.

[0077] Figure 6A illustrates more precisely a structure obtained after a step of forming an active stack of light-emitting diodes 701, or active LED stack, on the side of a face 703T of a substrate 703 (the upper face of the substrate 703, in the orientation of Figure 6A). The substrate 703 is, for example, transparent to the radiation 109 emitted by the light-emitting diodes 211, for example, transparent to visible light. By way of example, the substrate 703 is made of corundum (“ sapphire”, in English). As an alternative, for example in a case where the substrate 703 is completely removed in a later step, the substrate 703 can be made of a material opaque to the radiation 109 emitted by the light-emitting diodes 211, for example silicon.

[0078] In the example shown, a semiconductor layer 705 doped with a first type of conductivity, for example type N, covers the face 703T of the substrate 703. The semiconductor layer 705 is, for example, more precisely located on and in contact with the face 703T.

[0079] In the example shown, the semiconductor layer 705 is coated with an active layer 707. The active layer 707 is, in this example, located on and in contact with a face of the semiconductor layer 705 opposite the substrate 703 (the upper face of the layer 705, in the orientation of [Fig. 0A]). By way of example, the layer 707 includes quantum boxes or wells.

[0080] In the illustrated example, the active layer 707 is coated with another semiconductor layer 709. In this example, the semiconductor layer 709 is located on and in contact with a face of the active layer 707 opposite the substrate 703 (the upper face of the layer 707, in the orientation of [Fig. 0A]). The semiconductor layer 709 is, for example, doped with a second type of conductivity opposite to the first type of conductivity. In this example, the semiconductor layer 709 is of type P.

[0081] In the illustrated example, the semiconductor layer 705, the active layer 707 and the semiconductor layer 709 form the stack of light-emitting diode 701.

[0082] By way of example, the semiconductor layer 705, the active layer 707 and the semiconductor layer 709 are formed successively by epitaxial growth from the face 703T of the substrate 703.

[0083] [Fig. ôB] illustrates more precisely a structure obtained at the end of a step of formation of the light-emitting diodes 211 from the structure described above in relation to [Fig. ôA].

[0084] In the illustrated example, conduction electrodes 711 of the light-emitting diodes 211 are formed on the side of the face 703T of the substrate 703. The conduction electrodes 711 are, for example, more precisely, anode electrodes of the light-emitting diodes 211. In the example shown, the conduction electrodes 711 cover a face of the active stack of light-emitting diodes 701 opposite the substrate 703 (the upper face of the stack 701, in the orientation of [Fig. 0B]). The conduction electrodes 711 are, for example, located on and in contact with a face of the semiconductor layer 709 opposite the substrate 703 (the upper face of the layer 709, in the orientation of [Fig. 0B]). The conduction electrodes 711, for example, have the following characteristics when viewed from above: any shape, for example rectangular, oval, square, circular, etc. As an example, the conduction electrodes 711 are made of a conductive material, for example a metal or a metal alloy.

[0085] Furthermore, during this step, peripheral isolation trenches 713 are formed in the thickness of the active LED stack 701. In the example shown, each peripheral isolation trench 713 extends vertically in the thickness of the active LED stack 701, from the face of the semiconductor layer 709 opposite the substrate 703 and passes through the semiconductor layer 709 and the active layer 707. In this example, each peripheral isolation trench 713 is interrupted in the thickness of the semiconductor layer 705, i.e., the peripheral isolation trenches 713 do not open onto the face 703T of the substrate 703.

[0086] In the illustrated example, each peripheral insulation trench 713 has an annular shape surrounding, or bordering, a part of the active layer 707 corresponding to an active region of the light-emitting diode 211. Each peripheral insulation trench 713 further surrounds the conduction electrode 711 of the light-emitting diode 211.

[0087] The peripheral insulation trenches 713 form, for example, in top view, a grid in which each square laterally delimits a light-emitting diode 211.

[0088] By way of example, each peripheral insulation trench 713 includes a conductive region 715 whose side walls, or flanks, are coated with an insulating layer 717, the insulating layer 717 being for example located on and in contact with the flanks of the conductive region 715.

[0089] Furthermore, at least one connecting element 719 (a single connecting element 719 in the example shown) of a common conducting electrode, for example a cathode electrode, of the light-emitting diodes 211 is formed during this step. By way of example, each connecting element 719 comprises a conducting region 721 whose lateral walls, or flanks, are coated with an insulating layer 723, the insulating layer 723 being, for example, situated on and in contact with the flanks of the conducting region 721.

[0090] Fig. 6C illustrates more precisely a structure obtained at the end of a subsequent formation step, on the side of face 703T of substrate 703, of contact resumption elements 725.

[0091] In the example shown, each contact element 725 is located on and in contact with one of the conductive electrodes 711, or on and in contact with the conductive region 721 of the contact element 719. In this example, insulating regions 727 extend laterally between the contact elements 725. In the illustrated example, the contact elements 725 are flush with the upper face of the insulating regions 727.

[0092] By way of example, the contact resumption elements 725 and the insulating regions 727 are produced by the implementation of a damascene technique.

[0093] [Fig.6D] illustrates more precisely a structure obtained at the end of a step of forming the circuits 205 of the pixels PIX of the device 100. The step described in relation to [Fig.6D] can be carried out indifferently before, during or after the steps previously described in relation to figures 6A to 6C.

[0094] In the example shown, the structure includes a support substrate 751. By way of example, the support substrate 751 is a wafer or a piece of wafer made of a semiconductor material, for example silicon.

[0095] The support substrate 751 is, for example, coated on one of its faces with an insulating layer 753. In the example shown, the insulating layer 753 is located on and in contact with a face 751T of the support substrate 751 (the upper face of the substrate 751, in the orientation of [Fig. 6D]). By way of example, the insulating layer 753 is made of an oxide, for example silicon dioxide.

[0096] The insulating layer 753 is, for example, coated with a semiconductor layer 755, for example a silicon layer. In the example shown, the semiconductor layer 755 is located on and in contact with a face of the insulating layer 753 opposite the support substrate 751.

[0097] By way of example, the support substrate 751, the insulating layer 753, and the semiconductor layer 755 are part of a SOI (Silicon On Insulator) type substrate. In this case, the insulating layer 753 corresponds to the buried oxide layer (BOX) of the SOL substrate.

[0098] In this example, the circuits 205 are located on the side of the face 751T of the semiconductor substrate 751. By way of example, the circuits 205 are formed in and on the semiconductor layer 755.

[0099] Although not detailed in [Fig. 6D] to avoid cluttering the drawing, the structure further comprises, for example, an interconnection stack or network located on the semiconductor layer 755. The interconnection stack comprises, for example, a stack of alternating conductive layers, such as metallic layers or metallization levels, and insulating layers. The interconnection stack includes, for example, conductive tracks formed in the conductive layers and conductive vias, such as metallic vias, interconnecting conductive tracks located in different conductive layers.

[0100] In the example shown, only a conductive layer 759 of the interconnect stack furthest from the support substrate 751, called the last level of metallization, was symbolized by hatched rectangles in [Fig.6D]. In this example, the last level of metallization is formed in an insulating layer 757 of the interconnect stack.

[0101] The semiconductor layer 755 of the structure illustrated in [Fig.6D] corresponds for example to the semiconductor substrate 101 of the device 100 of [Fig. 1].

[0102] Although [Fig. 6D] illustrates an example in which the circuits 205 are formed in and on a SOI-type substrate, this example is not limiting. As an alternative, the circuits 205 may be formed in and on a bulk semiconductor substrate, for example identical or analogous to the support substrate 751 of [Fig. 6D].

[0103] Fig. 6E illustrates more precisely a structure obtained as a result of a subsequent step of transferring the structure previously described in relation to Fig. 6D onto the structure previously described in relation to Fig. 6C.

[0104] By way of example, the structure previously described in relation to [Fig. 6D] is inverted with respect to the orientation of [Fig. 6D] and then brought into contact, by the faces of the insulating layer 757 and the conductive layer 759 opposite the support substrate 751 (the lower faces of layers 757 and 759, in the orientation of [Fig. 6E]), with the faces of the contact elements 725 and the insulating regions 727 opposite the substrate 703 (the upper faces of the contact elements 725 and the insulating regions 727, in the orientation of [Fig. 6E]). During this step, the structure comprising the substrate 703 and the active stack of light-emitting diodes 701 is fixed to the interconnect stack of which the insulating layer 757 and the conductive layer 759 are part.

[0105] By way of example, the fixation is achieved by molecular bonding between the two surfaces brought into contact. The molecular bonding is, for example, more precisely of the hybrid type, each surface comprising conductive elements, for example metallic, and insulating elements, for example oxide.

[0106] The support substrate 751 is then, for example, removed. The support substrate 751 is, for example, completely removed, for example by grinding the side of the face 703T of the substrate 703. Using a SOI-type substrate has the advantage of facilitating the removal of the support substrate 751 during this step, for example by allowing it to stop on the insulating layer 753.

[0107] Fig. 6F illustrates more precisely a structure obtained at the end of a subsequent step of realization of conductive vias 761 and contact resumption elements 763.

[0108] In the example shown, the conductive vias 761 extend vertically from a face of the insulating layer 753 opposite the substrate 703 (the upper face of the layer 753, in the orientation of [Fig. 6F]), through the insulating layer 753 and penetrate the thickness of the semiconductor layer 755. Although this does not detailed in [Fig.6F] so as not to overload the drawing, the conducting vias 761 are for example connected to the circuits 205.

[0109] In the example shown, each contact resumption element 763 is located on and in contact with one of the conductive vias 761. In the illustrated example, at least one of the vias 761 is not covered by one of the contact resumption elements 763.

[0110] Fig. 6G illustrates more precisely a structure obtained after a subsequent step of deposition of an active layer 771 on the structure previously described in relation to Fig. 6F.

[0111] By way of example, the active layer 771 comprises quantum dots and / or at least one organic material. The active layer 771 is, for example, deposited over the entire upper surface of the structure. In the illustrated example, the active layer 771 is located on and in contact with the lateral and upper faces of the contact elements 763, as well as on and in contact with uncoated portions of the upper surface of the insulating layer 753 of the contact elements 763. By way of example, the active layer 771 is formed by spin-coating. In the example shown, portions of the active layer 771 are then removed directly above the uncoated conductive via(s) 761 of one of the contact elements 763.

[0112] Furthermore, during this step, a conductive layer 773 is deposited on the upper face of the structure. The conductive layer 773 constitutes, for example, a common upper electrode for all the photodetectors 201 of the device 100. In the example shown, the conductive layer 773 is located on and in contact with the uncoated conductive via(s) 761 of one of the contact-re-establishment elements 763. In this example, the conductive layer 773 is also located on and in contact with the lateral faces and the upper face of the active layer 771. The conductive layer 773 is transparent to the radiation 105 captured by the photodetectors 201. By way of example, the conductive layer 773 is made of a metal or a metal oxide, for example, indium-tin oxide (ITO).

[0113] Furthermore, during this step, lenses 775 are formed directly above each photodetector 201. In the example shown, the lenses 775 are located on and in contact with the face of the conductive layer 773 opposite the transparent substrate 703 (the upper face of the layer 773, in the orientation of [Fig.6G]).

[0114] The method described above in relation to Figures 6A to 6G can be used to create a monolithic device, for example a micro-display, combining an optical capture function in the infrared and a display of visible images. Alternatively, the method can be used to create larger devices. Such a device may comprise a plurality of elementary chips. (Smart pixels) arranged, for example in a matrix arrangement, on the same substrate. The individual chips are mounted securely to the substrate and connected to electrical connection elements on the substrate for power. In this case, each chip includes, for example, a photodetector 201, a light-emitting diode 211, and at least one of the circuits 205. Each chip corresponds, for example, to a macro-pixel of the device.The implementation of such a process is within the reach of a person skilled in the art, based on the indications in this description, and includes, for example, a cutting, or individualization, step of the elementary chips fixed on a temporary support substrate followed by steps of transferring the elementary chips onto the transfer substrate, the pitch of the elementary chips on the transfer substrate corresponding to an integer multiple strictly greater than 1 of the pitch of the elementary chips on the temporary support substrate.

[0115] Figures 7A and 7B illustrate, by means of schematic and partial cross-sectional views, structures obtained at the end of steps in a manufacturing process for device 100 of Figure 1 according to another embodiment. The process in Figures 7A and 7B corresponds, for example, more precisely to a case in which device 100 comprises pixels PIX-1, PIX-2 and PIX-3 of Figure 5.

[0116] Fig. 7A illustrates more precisely a structure obtained after a step of deposition of a stack 901 of active layers 903, 905 and 907 on the upper face side of the structure of Fig. 6F.

[0117] In the illustrated example, the active layer 903 is located on and in contact with the lateral and upper faces of the contact elements 763, as well as on and in contact with uncoated portions of the upper face of the insulating layer 753 of the contact elements 763. In this example, the active layer 905 is located on and in contact with the active layer 903, and the active layer 907 is located on and in contact with the active layer 905. The active layers 903, 905 and 907 are, for example, analogous to the layer 771 previously described in relation to [Fig. 6G].

[0118] Each active layer 903, 905, 907 comprises, for example, quantum dots and / or at least one organic material. Each active layer 903, 905, 907 differs, for example, from the other active layers of the 901 stack by the size of the quantum dots it comprises. Active layer 905 comprises, for example, quantum dots with an average size greater than the average size of the quantum dots in active layer 903, and active layer 907 comprises, for example, quantum dots with an average size greater than the average size of the quantum dots in active layer 905. In this case, active layer 907 predominantly absorbs infrared radiation in a range of wavelengths wavelengths higher than those absorbed by the active layer 905, and layer 903 predominantly absorbs infrared radiation in a range of wavelengths lower than those absorbed by the active layer 905. By way of example, the active layers 903, 905, and 907 are formed by spin-coating. In the example shown, portions of the stack 901 are then removed directly above the uncoated conductive via(s) 761 of one of the contact elements 763.

[0119] Furthermore, during this step, the conductive layer 773 is deposited on the upper face side of the structure. In the example shown, the conductive layer 773 is located on and in contact with the uncoated conductive via(s) 761 of one of the contact re-engagement elements 763. In this example, the conductive layer 773 is further located on and in contact with the side faces and the top face of the stack 901.

[0120] Fig. 7B illustrates more precisely a structure obtained at the end of a further step of forming filters 911-1, 911-2 and 911-3 and lenses 775 in line with photodetectors 201-1, 201-2 and 201-3.

[0121] In the example shown, the filters 911-1, 911-2, and 911-3 are located on and in contact with the upper surface of the conductive layer 773. Each filter 911-1, 911-2, 911-3 has, for example, in top view, a shape and lateral dimensions substantially identical to those of the underlying photodetector 201-1, 201-2, 201-3. The filters 911-1, 911-2, and 911-3 are, for example, transparent to infrared radiation 105-1, 105-2, and 105-3, respectively, and opaque to other radiation.

[0122] In the illustrated example, the lenses 775 are located on and in contact with the upper face of the underlying filter 911-1, 911-2 or 911-3. The lenses 775 allow, for example, the radiation 105-1, 105-2 or 105-3 to be focused into the stack 901 of active layers 903, 905 and 905 of the underlying photodetector 201-1, 201-2, 201-3.

[0123] Furthermore, during this step, a layer of glue 921 is deposited on the upper face side of the structure and a substrate 923 is glued onto the lenses 775.

[0124] In the example shown, the layer of glue 921 is flush with the upper face of the lenses 775.

[0125] In the illustrated example, the substrate 923 covers the upper surface of the adhesive layer 921. The substrate 923 is transparent to the 105-1, 105-2 and 105-3 radiations captured by the photodetectors 201-1, 201-2 and 201-3, for example, transparent to infrared radiation. As an example, the substrate 923 is made of glass.

[0126] Furthermore, during this step, the substrate 703 is completely removed and color converters 931-2 and 931-3 are formed, for example, directly above the light-emitting diodes 211-2 and 211-3. This corresponds, for example, to a case in which the light-emitting diodes 211-1, 211-2 and 211-3 emit predominantly blue light, the 931-2 and 931-3 color converters are then, for example, adapted to convert blue light into green light and red light, respectively.

[0127] Fig. 8 is a schematic, partial side view of an example of implementation of device 100 of Fig. 1 in an electronic device 1000. By way of example, device 1000 is a pair of connected glasses or a head-mounted display intended to be placed in front of a user's eyes, for example, an augmented reality or mixed reality headset or glasses.

[0128] Although only one device 100 placed opposite one eye 1001 has been symbolized in [Fig. 8], the electronic device 1000 can of course include another device 100 placed opposite the user's other eye. In the illustrated example, the majority of the radiation, for example visible light, reaching the eye 1001 comes from the device 100.

[0129] In the example shown, the electronic device 1000 comprises, in addition to the image capture and display device 100, a power supply circuit 1003 and focusing elements 1005, for example two convex lenses, located on either side of the device 100. By way of example, the power supply circuit 1003 includes a battery.

[0130] In the illustrated example, the focusing element 1005 interposed between the device 100 and the eye 1001 is adapted to focus, on the eye 1001, the radiation 109 produced by the emission elements 107. Furthermore, in this example, the focusing element 1005 located between the device 100 and the outside is adapted to focus the incident radiation 105 on the detection elements 103.

[0131] The electronic device 1000 is for example devoid of addressing circuits and / or analog-to-digital converters.

[0132] Fig. 9 is a schematic and partial side view of another example of implementation of device 100 of Fig. 1 in an electronic device 1100. By way of example, device 1100 is a pair of glasses for assisting visually impaired persons, a pair of glasses for assisting a driver of a motor vehicle or a head-up display device, for example integrated into a motor vehicle such as a car, truck, etc.

[0133] The electronic device 1100 is, for example, adapted to superimpose, onto an image of a scene seen by the eye 1001, an image produced by the device 100, for example, an image of a contour or an intensified image of an object in the scene. In the case of an intensified image, the device 100 further includes, for example, an image processing circuit adapted to implement this function. By way of example, the device 1100 is used in image intensification or brightness amplification applications, or in vision applications in dimly lit environments, for example, night vision applications.

[0134] The electronic device 1100 of [Fig.9] includes elements in common with the electronic device 1000 of [Fig.8]. These common elements will not be detailed again below.

[0135] The electronic device 1100 of [Fig.9] differs from the electronic device 1000 of [Fig.8] in that, in the device 1100, the device 100 is not placed opposite the eye 1001. In the illustrated example, the majority of the radiation, for example visible light, reaching the eye 1001 comes from the scene and the majority of the incident radiation 105 reaches the eye 1001 without being captured by the device 100.

[0136] In the illustrated example, the electronic device 1100 includes an optical waveguide 1101 comprising an input face arranged opposite the device 100, for example opposite the emitting elements 107, and an output face arranged opposite the eye 1001. In this example, the optical waveguide 1101 is adapted to transmit, in the direction of the eye 1001, the radiation 109 emitted by the device 100.

[0137] Although not detailed, a person skilled in the art is able, from the indications in this description, to plan for integrating into the apparatus 1000 or 1100, one or more devices 100 comprising pixels of the type of PIX pixels, allowing capture and display of monochrome images, or of the type of PIX-1, PIX-2 and PIX-3 pixels allowing capture and display of multispectral images.

[0138] An advantage of integrating one or more devices 100 into the device 1000 or 1100 is that it allows these devices to have a lower weight, size, complexity, energy consumption, manufacturing costs and / or latency than similar devices incorporating image capture and display devices including readout and control circuits implementing sensor and display addressing functions to which they are connected, and in which the images acquired by the sensor are for example stored in a memory circuit before being displayed, possibly after processing.

[0139] Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will become apparent to those skilled in the art. In particular, although the described embodiments take as an example a case in which the arrays of sensing elements 103 and display elements 107 have a substantially identical pitch, those skilled in the art can predict, from the indications in this description, that the display element array 107 of the device 100 has a different, for example, larger, pitch than the sensing element array 103.

[0140] Furthermore, the embodiment of the PIX pixel previously described in relation to [Fig.3] can be adapted, from the indications of the present description, to the realization of the PIX-1, PIX-2 and PIX-3 pixels of the embodiment of [Fig.5].

[0141] Finally, the practical implementation of the described embodiments and variants is within the reach of a person skilled in the art, based on the functional indications given above. In particular, the described embodiments are not limited to the specific examples of materials and dimensions mentioned in this description.

Claims

Demands

1. Electronic device (100) for capturing and displaying images comprising a plurality of pixels (PIX; PIX-1, PIX-2, PIX-3) formed in and on a semiconductor substrate (101; 755), each pixel comprising: - a detection element (103; 103-1, 103-2, 103-3) for an organic and / or quantum dot-based infrared radiation (105; 105-1, 105-2, 105-3), located on the side of a first face (101F) of the semiconductor substrate (101); - a visible light emission element (107; 107-1, 107-2, 107-3) (109; 109-1, 109-2, 109-3), located on the side of a second face (101R) of the semiconductor substrate opposite to the first face and comprising at least one light-emitting diode (211; 211-1, 211-2, 211-3); and - a circuit (205) located in and on the semiconductor substrate and connecting the detection element to the emission element, in which said at least one light-emitting diode (211;211-1, 211-2, 211-3) is controlled by a control signal having pulses repeating at a frequency substantially proportional to an intensity of the infrared radiation (105; 105-1, 105-2, 105-3) detected by the detection element (103; 103-1, 103-2, 103-3).;

2. Device (100) according to claim 1, wherein the circuit (205) comprises: - an acquisition circuit (207) located in and on the semiconductor substrate (101; 755) and adapted to provide an acquisition signal representative of an intensity of the infrared radiation (105; 105-1, 105-2, 105-3) received by the detection element (103; 103-1, 103-2, 103-3) of the pixel (PIX; PIX-1, PIX-2, PIX-3); and - a control circuit (209) located in and on the semiconductor substrate and adapted to apply a control signal to the emission element (107; 107-1, 107-2, 107-3) of the pixel.

3. Device (100) according to claim 2, wherein the acquisition circuit (207) and the control circuit (209) are analog circuits.

4. Device (100) according to claim 2, wherein: - each detection element (103) includes a photodetector (201) having an active layer based on at least one organic material and / or quantum dots; - each acquisition circuit (207) includes a comparator (301) having an inverting input connected to a conduction electrode of the photodetector; and - each control circuit (209) includes an inverter (317) having an input connected to an output of the comparator and an output connected to a gate of a MOS transistor (319), the MOS transistor having a conduction electrode connected to the emission element (107).

5. Device (100) according to any one of claims 1 to 4, wherein the detection elements (103; 103-1, 103-2, 103-3) are located opposite the emission elements (107; 107-1, 107-2, 107-3).

6. Device (100) according to any one of claims 1 to 5, wherein the sensing elements (103; 103-1, 103-2, 103-3) and the emitting elements (107; 107-1, 107-2, 107-3) are arranged respectively in first and second matrices, the first and second matrices having substantially identical pitches.

7. Device (100) according to any one of claims 1 to 6, comprising as many detection elements (103; 103-1, 103-2, 103-3) as emission elements (107; 107-1, 107-2, 107-3).

8. Device (100) according to any one of claims 1 to 7, wherein the pixels (PIX-1, PIX-2, PIX-3) are distributed into elementary groups each comprising: - at least a first pixel (PIX-1) whose detection element (103-1) is sensitive mainly in a first range of wavelengths of infrared radiation (105-1) and whose emission element (107-1) is adapted to emit mainly visible light (109-1) in a second range of wavelengths, preferably blue light; - at least a second pixel (PIX-2) whose detection element (103-2) is sensitive mainly in a third range of infrared radiation wavelengths (105-2) different from the first range, and whose emission element (107-2) is adapted to emit mainly visible light (109-2) in a fourth wavelength range different from the second range, preferably green light; and - at least a third pixel (PIX-3) whose sensing element (103-3) is sensitive mainly in a fifth wavelength range of infrared radiation (105-3) different from the first and third ranges, and whose emitting element (107-3) is adapted to emit mainly visible light (109-3) in a sixth wavelength range different from the second and fourth ranges, preferably red light.

9. Electronic device (1000; 1100) comprising: - a power supply circuit (1003); and - at least one device (100) according to any one of claims 1 to 8.

10. A method for manufacturing a device (100) according to any one of claims 1 to 8, comprising a step of transferring, by molecular bonding, a structure comprising the sensing elements (103; 103-1, 103-2, 103-3) and the circuits (205) onto another structure comprising the emitting elements (107; 107-1, 107-2, 107-3).

Images