METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE

Abstract

METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE The present description relates to a method for manufacturing an electronic device (22), comprising forming, in a first handle (5) having first and second opposite faces (7), grooves (8) in the first face, attaching the first handle (5) to a second handle (15) on the first face side, thinning the first handle (5) on the second face side (7), manufacturing a plate (20) comprising several copies of the electronic device (22), attaching the plate (20) to the second face (7) of the first handle (5), forming trenches (32) in the plate (20) in the extension of the grooves (8), removing the second handle (15), and breaking the first handle (5) at the bottom of the grooves (8) to separate the electronic devices (22). Figure for abstract: Fig. 7

Description

Title of the invention: METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE Technical field

[0001] The present description relates generally to methods of manufacturing electronic devices, in particular optoelectronic devices comprising light-emitting diodes. Prior art

[0002] An example of a method for manufacturing an electronic device comprises forming, on a support, a plate comprising several copies of the electronic device followed by separating the electronic devices. The separation of the electronic devices can be carried out by cutting the plate and the support, in particular by sawing. Such a cutting method can be difficult to implement when the electronic devices each occupy a reduced surface area.

[0003] A method for separating electronic devices to obtain cutting lines of reduced width comprises locally weakening the support by laser treatment allowing the support to be broken by mechanical action to separate the electronic devices. A disadvantage is that the laser treatment can damage components of the electronic devices close to the cutting lines. This disadvantage can be particularly pronounced when the electronic devices each comprise a plurality of three-dimensional semiconductor elements of nanometric or micrometric size, separated by an electrically insulating material.Indeed, since the size of the semiconductor three-dimensional elements and the distance separating the semiconductor three-dimensional elements are reduced, the heat dissipation of the heat provided by the laser processing can cause damage to the semiconductor three-dimensional elements close to the cutting lines. Summary of the invention

[0004] One embodiment overcomes all or part of the drawbacks of known electronic device manufacturing methods.

[0005] An object of an embodiment is that the components of the electronic devices near the cutting lines are not damaged.

[0006] One embodiment provides a method of manufacturing an electronic device comprising the following steps: - forming, in a first handle having first and second opposite faces, grooves in the first face; - fixing the first handle to a second handle on the side of the first face; - thinning the first handle on the side of the second face; - production of a plate comprising several copies of the electronic device; - fixing the plate to the second face of the first handle; - formation of trenches in the plate in the extension of the grooves; - removal of the second handle; and - breaking the first handle at the bottom of the grooves to separate the electronic devices.

[0007] Advantageously, the first handle is thinned to facilitate its breakage. In addition, advantageously, the steps of forming the grooves and thinning the first handle do not damage the electronic devices of the plate since these steps are carried out before the fixing of the plate to the first handle. In addition, since the fixing of the plate to the second face of the first handle obtained is carried out after thinning the first handle, it can then be obtained more easily, at the end of the thinning step, a surface condition of the second face suitable for the step of fixing the plate to the first handle. Better control of the quality of the fixing of the plate to the first handle can advantageously be obtained.In addition, the formation of the trenches in the plate in the extension of the grooves, and the breaking of the first handle at the trenches facilitates the separation of the electronic devices without damage to the electronic components of the electronic devices.

[0008] According to one embodiment, the grooves are formed by laser engraving. Advantageously, the laser treatment does not damage the electronic components of the electronic devices since it is carried out before the plate is fixed to the first handle.

[0009] According to one embodiment, the fixing of the first handle to the second handle is carried out by gluing with a first layer of glue. The first layer of glue advantageously allows the creation of a temporary bond between the first handle and the second handle. Advantageously, the first layer of glue is located on the side of the first face of the first handle while the step of thinning the first handle is carried out on the side of the second face of the first handle. The first layer of glue does not hinder the implementation of the thinning step. In particular, the first layer of glue does not hinder the operation of a grinding or polishing tool used during the thinning step and is compatible with the thinning techniques so as to maintain the bonding.It can then be obtained more easily, at the end of the thinning step, a surface state of the second face suitable for the fixing step. for example by gluing, from the plate to the first handle. Better control of the quality of the fixing, for example by gluing, from the plate to the first handle can advantageously be achieved.

[0010] According to one embodiment, the step of removing the second handle further comprises a step of removing, totally or partially, the first layer of glue.

[0011] According to one embodiment, the plate is fixed to the first handle by gluing with a second layer of glue. Depending on the applications envisaged, the bonding between the plate and the first handle is a permanent bond. The properties of the second layer of glue may therefore be different from the properties of the first layer of glue.

[0012] According to one embodiment, the trenches further extend into the second layer of glue.

[0013] According to one embodiment, the plate is fixed to the first handle by molecular bonding. This advantageously makes it possible to avoid the presence of the second layer of glue.

[0014] According to one embodiment, the trenches are formed by etching the plate by dry etching or wet etching.

[0015] According to one embodiment, the step of attaching the plate to the first handle comprises a step of positioning first marks of the first handle relative to second marks of the plate, such that each electronic device to be separated is positioned between four grooves among the grooves.

[0016] According to one embodiment, the first handle is at least partly made of glass, quartz, or sapphire.

[0017] According to one embodiment, in projection in a plane parallel to the second face, one of the grooves is located between each pair of adjacent electronic devices.

[0018] An embodiment also provides a structure comprising: - a first handle having first and second faces and grooves in the first face; - a plate comprising several copies of an electronic device fixed to the first handle on the side of the second face; and - a second handle attached to the first handle on the side of the first face.

[0019] According to one embodiment, the structure further comprises a first layer of glue between the first handle and the second handle.

[0020] According to one embodiment, the structure further comprises a second layer of glue between the plate and the first handle.

[0021] According to one embodiment, in projection in a plane parallel to the second face, one of the grooves is located between each pair of adjacent electronic devices.

[0022] According to one embodiment, the grooves delimit pads in the first handle, each pad facing only one of the electronic devices.

[0023] An embodiment also provides an electronic system comprising an electronic device having a first side wall and a block having first and second opposing faces and a second side wall, the electronic device being attached to the second face, the electronic system further comprising flanks containing the first side wall, the second side wall and a portion connecting the first side wall to the second side wall projecting from the first side wall and from the second side wall.

[0024] According to one embodiment, the electronic device comprises light-emitting diodes. The formation of the grooves advantageously does not cause deterioration of the light-emitting diodes adjacent to the desired cutting lines.

[0025] According to one embodiment, each light-emitting diode comprises a three-dimensional semiconductor element of nanometric or micrometric size, corresponding to a microwire, a nanowire or a structure of nanometric or micrometric size of pyramidal shape, and an active layer covering the three-dimensional semiconductor element. Brief description of the drawings

[0026] These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the attached figures among which:

[0027] [Fig.lA], [Fig.lB], [Fig.2A], [Fig.2B], [Fig.3], [Fig.4], [Fig.5], [Fig.6], [Fig.7], [Fig.8], [Fig.9] and [Fig.10] are partial and schematic sectional views of the structure obtained in steps of an embodiment of a method for manufacturing an electronic device, [Fig.lB] being analogous to [Fig.lA] and illustrating a variant, and [Fig.2B] being analogous to [Fig.2A] and illustrating a variant;

[0028] [Fig. 1 1] is a partial and schematic sectional view of an electronic system comprising the electronic device obtained according to the embodiment of the manufacturing method illustrated in Figures 1 to 10;

[0029] [Fig.12], [Fig.13] and [Fig.14] are partial and schematic sectional views of structures obtained in steps of another embodiment of a method for manufacturing an electronic device;

[0030] [Fig. 15] is a partial and schematic sectional view of the structure obtained at a step of another embodiment of a method of manufacturing an electronic device;

[0031] [Fig. 16] is a partial and schematic sectional view of the structure obtained at a step of another embodiment of a method of manufacturing an electronic device;

[0032] [Fig. 17] is a partial and schematic sectional view of an embodiment of a support;

[0033] [Fig.18], [Fig.19], [Fig.20], [Fig.21], [Fig.22], [Fig.23], [Fig.24], [Fig.25], [Fig.26], [Fig.27], [Fig.28], [Fig.29], and [Fig.30] are partial and schematic sectional views of structures obtained in steps of an embodiment of a method for manufacturing an optoelectronic device comprising light-emitting diodes; and

[0034] [Fig.31] [Fig.32] and [Fig.33] are partial and schematic sectional views of embodiments of light-emitting diodes. Description of the embodiments

[0035] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0036] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been shown and are detailed.

[0037] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0038] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made unless otherwise specified to the orientation of the figures.

[0039] Unless otherwise specified, the expressions "about", "approximately", "substantially", and "of the order of" mean to within 10%, preferably to within 5%. In the case of angle, the expressions "about", "approximately", "substantially", and "of the order of" mean to within 10°, preferably to within 5°. In addition, it is considered here that the terms "insulator" and "conductor" mean respectively "electrically insulating" and "electrically conducting".

[0040] By optoelectronic devices is meant devices adapted to carry out the conversion of an electrical signal into electromagnetic radiation or vice versa, and in particular devices dedicated to the detection, measurement or emission of electromagnetic radiation.

[0041] The transmittance of a layer corresponds to the ratio between the intensity of the radiation leaving the layer through an exit face and the intensity of the radiation entering the layer through an entry face opposite the exit face. In the remainder of the description, a layer or a film is said to be opaque to radiation when the transmittance of the radiation through the layer or the film is less than 10%. In the remainder of the description, a layer or a film is said to be transparent to radiation when the transmittance of the radiation through the layer or the film is greater than 10%.

[0042] [Fig.1A], [Fig.2A], [Fig.3], [Fig.4], [Fig.5], [Fig.6], [Fig.7], [Fig.8], [Fig.9] and [Fig.10] are partial and schematic sectional views of the structure obtained in steps of an embodiment of a method for manufacturing an electronic device.

[0043] [Fig.lA] is a partial and schematic sectional view of the structure obtained after a step of forming in a first handle 5, comprising two opposite faces 6, 7, grooves 8 extending from the face 6, eight grooves 8 being shown as an example in [Fig.lA]. According to one embodiment, the faces 6 and 7 are parallel. According to one embodiment, the faces 6 and 7 are planar. According to one embodiment, the thickness of the first handle 5, outside the grooves 8, is between 50 μm and 3 mm. According to one embodiment, the first handle 5 has a single-layer or multi-layer structure. According to one embodiment, the first handle 5 is transparent to visible light. According to one embodiment, the first handle 5 is made of glass, quartz, or sapphire. According to one embodiment, the grooves 8 are rectilinear.

[0044] Each groove 8 is characterized by a depth and a width. It typically comprises a bottom 9 and side walls 10. Depending on the section of the groove 8, the bottom 9 may be rounded or even disappear if the side walls 10 are in the shape of a "V". According to one embodiment, each groove 8 extends into the first handle 5, from the face 6 of the first handle 5, over a depth of between 5 μm and 200 μm, for example equal to approximately 30 μm. According to one embodiment, each groove 8 has a width of between 1 μm and 100 μm.

[0045] [Fig.lB] is a figure similar to [Fig.lA] and illustrates grooves 8 each having a "V" shaped cross-section with inclined side walls 10.

[0046] The grooves 8 delimit studs 11 in the first handle 5 separated from each other.

[0047] According to one embodiment, the grooves 8 are formed by laser etching, by chemical etching (wet or dry), by mechanical sawing or by a combination of these different techniques. According to one embodiment, the wavelength of the laser beam used to etch the grooves 8 is between 100 nm and 3000 nm depending on the material to be etched. According to one embodiment, the laser beam is emitted in the form of one pulse, two pulses or more than two pulses, each pulse having a duration of between 0.1 ps and 1000 ps. The energy of the laser beam for each pulse is between 1 pJ and 100 pJ.

[0048] [Fig.2A] is a partial and schematic sectional view of the structure obtained after fixing a second handle 15 to the first handle 5 by means of a layer of glue 16 which allows temporary bonding of the second handle to the first handle. The second handle 15 is fixed to the first handle 5 on the side of the face 6, that is to say on the side of the grooves 8. According to one embodiment, the glue penetrates into the grooves 8. The second handle 15 comprises two opposite faces 17, 18, the layer of glue 16 being in direct physical contact with the face 17. According to one embodiment, the faces 17 and 18 are parallel. According to one embodiment, the faces 17 and 18 are flat. According to one embodiment, the thickness of the second handle 15 is between 50 μm and 3 mm. According to one embodiment, the second handle 15 is made of silicon or other semiconductor material, glass, quartz or sapphire.

[0049] [Fig.2B] is a figure similar to [Fig.2A] and illustrates a variant in which the layer of glue 16 does not penetrate into the grooves 8.

[0050] The thickness of the adhesive layer 16 is between 10 μm and 300 μm. According to one embodiment, the adhesive layer 16 is made of an organic or inorganic matrix material having adhesion properties and detachment properties. This material may be a composite, a single layer or a multilayer material.

[0051] [Fig. 3] is a partial and schematic sectional view of the structure obtained after a step of thinning the first handle 5 from the face 7. Depending on the nature of the material or materials making up the first handle 5, the thinning step can be carried out by grinding and / or by CMP (English acronym for Chemical-Mechanical Polishing). The CMP step can comprise, simultaneously or successively, mechanical polishing steps and chemical etching steps. At the end of the thinning step, the thickness of the first handle 5 is between 30 μm and 200 μm.

[0052] At the end of the thinning step, the thickness of the first handle 5 at the bottom of each groove 8 is sufficiently small to allow the implementation of a step of breaking the first handle 5 at the bottom of each groove 8 at a later step of the method described below and is sufficiently high to prevent accidental breaking of the first handle 5 at the bottom of one of the grooves 8 before the breaking step is carried out, even if the first handle 5 may be subjected to bending during the steps of the method.

[0053] Advantageously, the layer of glue 16 is located on the side of the face 6 of the first handle 5 while the thinning step is carried out on the side of the face 7 of the first handle 5. The layer of glue 16 does not hinder the implementation of the thinning step. In particular, the layer of glue 16 does not hinder the operation of a grinding or polishing tool used during the thinning step.

[0054] [Fig. 4] is a partial and schematic sectional view of the structure obtained after the manufacture of a plate 20 on a substrate 21, the plate 20 comprising several examples of an electronic device 22, four examples of the electronic device 22 being represented in their entirety as an example in [Fig. 4]. The plate 20 comprises an upper face 23 and a lower face 24, opposite the upper face 23. The lower face 24 is in contact with the substrate 21. The upper face 23 is preferably planar. According to one embodiment, the thickness of the plate 20 is between 1 μm and 100 μm, preferably between 10 μm and 20 μm. The electronic device 22 comprises at least one electronic component 25, a single electronic component 25 being represented very schematically as an example for each electronic device 22 in [Fig. 4]. According to one embodiment, the electronic device 22 is an optoelectronic device.The electronic components 25 can then comprise light sources, in particular light-emitting diodes.

[0055] [Fig. 5] is a partial and schematic sectional view of the structure obtained after fixing the plate 20 to the first handle 5. More precisely, the upper face 23 of the plate 20 is fixed to the face 7 of the first handle 5, that is to say on the side opposite the grooves 8. According to one embodiment, the plate 20 is fixed to the first handle 5 by means of a layer of glue 30. The layer of glue 30 is made of an organic or inorganic matrix material having adhesion properties and optical properties allowing transmission of light in the visible spectrum, and is for example made of an epoxy-based material, in particular a photosensitive resin of the SU-8 type, a benzocyclobutene (BCB)-based resin, an optical adhesive marketed under the name NOA or under the name IB A. This material can be a composite, a single layer or a multi-layer material.The thickness of the glue layer 30 is between 1 μm and 40 μm. According to one embodiment, the glue layer 30 corresponds to an adhesive. optical. In particular, when the electronic device 22 comprises a light-emitting diode, the adhesive layer 30 may be transparent to the radiation of the light-emitting diode. As described previously, the adhesive layer 16 does not hinder the implementation of the step of thinning the first handle 5. It can then be obtained more easily, at the end of the thinning step, a surface state of the face 7 suitable for the step of fixing, for example by gluing, the plate 20 to the first handle 5. Better control of the quality of the fixing, for example by gluing, of the plate 20 to the first handle 5 can advantageously be obtained.

[0056] The grooves 8 are located in the extension of desired cutting lines between the electronic devices 22. The cutting lines are indicated schematically by dashed lines 29 in [Fig. 5]. The desired cutting lines 29 between the electronic devices 22 and the grooves 8 are superimposed in a direction orthogonal to the face 7, the desired cutting lines 29 covering the grooves 8 in a direction orthogonal to the face 7. In other words, the cutting lines 29 are opposite the pattern formed by the grooves 8 in a direction orthogonal to the face 7. The cutting lines 29 correspond to the parts of the plate 20 to be removed to obtain the separation of the electronic devices 22. The correct positioning of the plate 20 relative to the first handle 5 is obtained by using for example marks on the plate 20 and marks on the first handle 5 (the marks not being illustrated).According to one embodiment, in projection in a plane parallel to the face 7, the electronic component 25 or the electronic components 25 of each electronic device 22 are surrounded by the grooves 8. This means, in projection in a plane parallel to the face 7, a groove 8 is located between the electronic component 25 or the electronic components 25 of each electronic device 22 of two adjacent electronic devices 22. Each pad 11 is thus opposite only one of the electronic devices 22.

[0057] [Fig. 6] is a partial and schematic sectional view of the structure obtained after removal of the substrate 21 to expose the lower face 24 of the plate 20 and after a step of forming, on the face 24 of the plate 20, electrical connection elements of the electronic devices 22, for example solder balls 31 or connection pads. The step of removing the substrate 21 is carried out for example by grinding, by dry etching, in particular plasma etching, or by wet etching, or by chemical-mechanical polishing, also called CMP (English acronym for Chemical-Mechanical Polishing).

[0058] [Fig. 7] is a partial and schematic sectional view of the structure obtained after the formation of trenches 32 in the plate 20, and possibly in the glue layer 30, to delimit the electronic devices 22 to be separated. The trenches 32 are formed on the desired cutting lines 29 between the electronic devices 22. Each trench 32 comprises a bottom 33 and side walls 34. The trenches 32 may extend into the glue layer 30 until they reach the face 7 of the first handle 5. According to one embodiment, the trenches 32 do not extend into the first handle 5. According to one embodiment, the bottom 33 of the trench 32 corresponds to a portion of the face 7 of the first handle 5. According to one embodiment, the depth of each trench 32 is between 10 pm and 80 pm. According to one embodiment, the width of each trench 32 is between 1 pm and 50 pm, preferably between 30 pm and 40 pm. The trenches 32 are formed in the extension of the grooves 8. This means that each trench 32 is aligned with one of the grooves 8.According to one embodiment, the trenches 32 are formed by etching, for example by dry etching, in particular plasma etching, or by mechanical sawing.

[0059] [Fig.8] is a partial and schematic sectional view of the structure obtained after fixing the structure obtained in [Fig.7] to an adhesive film 35, for example made of stretchable material, arranged on the side of the solder balls 31. According to one embodiment, the adhesive film 35 is made of a material included in the group comprising the materials described in patents US 4222913 and US 4379197, polyethylene resins without polymerized vinyl acetate groups, acrylate polymers such as the following components: 2-ethylhexyl acrylate, n-butyl acrylate, methyl acrylate and t-butyl methacrylate. A stretchable material is defined as a material whose longitudinal deformation modulus, i.e. the ratio between the stress and the relative elongation, is between 102 Pa and 106 Pa. Preferably, the film 35 is adapted to deform with an elongation at the breaking limit greater than 150%, preferably greater than 300%.

[0060] [Fig.9] is a partial and schematic sectional view of the structure obtained. after the removal of the second handle 15 and the removal of the glue layer 16 to expose the face 6 and the grooves 8 of the first handle 5. Alternatively, the glue layer 16 may not be removed completely but only partially. The first handle 5 which forms a continuous screen advantageously plays a role in protecting the electronic devices 22 during the removal of the second handle 15 and the removal, total or partial, of the glue layer 16.

[0061] According to one embodiment, the material composing the layer of glue 16 allows temporary bonding to be created between the first handle 5 and the second handle 15. This means that the mechanical connection provided by the layer of glue 16 between the first handle 5 and the second handle 15 can be broken by a treatment which does not damage the other elements of the structure, in particular the first handle 5, the second handle 15, and the plate 20.

[0062] According to one embodiment, the second handle 15 is detached from the first handle 5 by removal or physicochemical modification of the glue layer 16. According to one embodiment, the removal or physicochemical modification of the glue layer 16 is carried out by a mechanical action, for example by making a cut in the glue layer 16 using a blade.

[0063] According to another embodiment, the removal or the physicochemical modification of the adhesive layer 16 is carried out by degradation of the material composing the adhesive layer 16. According to one embodiment, the degradation of the material composing the adhesive layer 16 is carried out by heating the adhesive layer 16. According to another embodiment, the degradation of the material composing the adhesive layer 16 is carried out by a chemical action on the adhesive layer 16, carried out simultaneously with the heating of the adhesive layer 16. According to another embodiment, the degradation of the material composing the adhesive layer 16 is carried out by exposing the adhesive layer 16 to radiation, for example ultraviolet, infrared, or visible light radiation, possibly from a laser source.

[0064] According to one embodiment, the second handle 15 is removed by grinding and / or by CMP (English acronym for Chemical-Mechanical Polishing) of the second handle 15 from the face 18. The adhesive layer 16 can then be removed by using a solvent, by wet or dry etching, or by plasma incineration.

[0065] [Fig. 10] is a partial and schematic sectional view of the structure obtained after mechanical rupture of the first handle 5 from the bottom 9 of each groove 8. The mechanical rupture is carried out by mechanical devices which produce the fracture between the grooves 8 and the trenches 32 in the thin layer of material remaining of the first handle 5 between the bottom 9 of the grooves 8 and the bottom of the trenches 32. The first handle 5 is then separated into blocks 36, each block 36 being fixed to one of the electronic devices 22. The rupture zones 37 extend from the bottom 9 of each groove 8 to the face 7 of the first handle 5 in the bottom 33 of the trench 32 located in the extension of the groove 8. Separate electronic systems 40 are thus obtained, each electronic system 40 comprising the electronic device 22 and the block 36 to which it is fixed.According to one embodiment, the breaking step comprises extending the adhesive film 35 in the plane of the adhesive film 35, the electronic devices 22 then being separated but still attached to the adhesive film 35, the adhesive film 35 being in a stretched state, i.e. tensile forces are exerted on the adhesive film such that the surface area of ​​the stretched adhesive film in top view corresponds to 150% to 10000% of the surface area of ​​the same adhesive film on which tensile forces are not exerted. The stretched state of the adhesive film is maintained by mechanical means.

[0066] The electronic systems 40 can then be handled separately, for example by a pick and place system, not shown, and detached from the adhesive film 35.

[0067] The method may comprise subsequent steps, in particular a step of removing the blocks 36 and the layer of glue 30 present under each electronic device 22. In the case where the block 36 is kept for future use of the electronic device 22 and the electronic device 22 comprises a light source, the block 36 may, advantageously, be transparent to the light radiation emitted by the electronic device 22.

[0068] The embodiment of the manufacturing method advantageously allows the laser treatment of the first handle 5 to form the grooves 8 not to damage the electronic components 25 of the plate 20 since the laser treatment of the first handle 5 is carried out before the plate 20 is fixed to the first handle 5.

[0069] [Fig. 11] is a partial, schematic, sectional view of an electronic system 40 of [Fig. 10]. The electronic system 40 comprises the electronic device 22 and the block 36 to which it is fixed by a portion of the adhesive layer 30. The electronic system 40 comprises sides 41, each side 41 comprising the side wall 34 of the trench 32 having allowed the delimitation of the electronic device 22, a part of the bottom 33 of this trench 32, a side wall 10 of the groove 8 which was located in the extension of the trench 32, a part of the bottom 9 of the groove 8, and a wall 42 resulting from the rupture of the first handle 5. According to one embodiment, the wall 42 projects laterally relative to the wall 34 of the electronic device 22. Furthermore, according to one embodiment, the wall 34 is not coplanar with the wall 10.

[0070] [Fig. 12], [Fig. 13] and [Fig. 14] are partial and schematic sectional views of structures obtained in steps of another embodiment of a method of manufacturing an electronic device.

[0071] The initial steps are the same as those described previously in relation to Figures 1 to 9.

[0072] [Fig. 12] is a partial and schematic sectional view of the structure obtained after fixing an adhesive film 45, made of stretchable material, to the structure obtained in [Fig. 9] on the side of the first handle 5, more precisely on the side of the face 6 of the first handle 5.

[0073] [Fig. 13] is a partial and schematic sectional view of the structure obtained after removal of the adhesive film 35.

[0074] [Fig. 14] is a partial and schematic sectional view of the structure obtained after mechanical rupture of the first handle 5 in the extension of each groove 8. Separate electronic devices 22 are thus obtained. According to one embodiment embodiment, the breaking step comprises extending the adhesive film 45 in the plane of the adhesive film 45, the electronic devices 22 then being separated but still attached to the adhesive film 45 in a stretched state. As previously described, the electronic systems 40 can then be handled separately, for example by a pick and place system, not shown, and detached from the adhesive film 45.

[0075] [Fig. 15] is a partial and schematic sectional view of the structure obtained in a step of another embodiment of a method for manufacturing an electronic device. The manufacturing method according to the present embodiment comprises the steps described previously in relation to FIGS. 1 to 10 with the difference that the plate 20 is fixed to the first handle 5 by molecular bonding in which the face 23 of the plate 20 is placed in direct physical contact with the face 7 of the first handle 5 without the interposition of an additional bonding material.

[0076] [Fig. 16] is a partial and schematic sectional view of the structure obtained in a step of another embodiment of a method for manufacturing an electronic device. The manufacturing method according to the present embodiment comprises the steps described previously in relation to FIGS. 1 to 10 with the difference that the second handle 15 comprises a sacrificial layer 46 on the side of the face 17, for example in contact with the adhesive layer 16. In the step of removing the second handle 15, described previously in relation to [Fig. 9], it is the sacrificial layer 46 which is degraded, for example by laser treatment, to allow the removal of the second handle 15, and the adhesive layer 16 is then removed, for example by chemical etching.

[0077] [Fig. 17] is a sectional view of an embodiment of the first handle 5. According to one embodiment, the first handle 5 has a multilayer structure and comprises a layer 50 of a first material covering a substrate 52 made of a second material different from the first material. The grooves 8 are formed in the layer 50. The substrate 52 may be transparent to the laser. According to one embodiment, the second material is a semiconductor material. The semiconductor material may be silicon, germanium or a mixture of at least two of these compounds. Preferably, the substrate 52 is made of silicon, more preferably monocrystalline silicon. As a variant, the substrate 52 may be, at least in part, of a non-semiconductor material, for example an electrically insulating material or an electrically conductive material. The thickness of the layer 50 is between 50 μm and 200 μm.Advantageously, the second material composing the substrate 52 is chosen to facilitate the thinning step described previously in relation to [Fig. 3]. In particular, the determination of the end of the thinning step is facilitated since it corresponds to the complete removal of the substrate 52. According to one embodiment. embodiment, the first material is transparent to visible light. According to one embodiment, the first material comprises glass, quartz, and sapphire.

[0078] A more detailed embodiment will now be described in the case where the electronic device 22 is an optoelectronic device and the electronic components 25 comprise light-emitting diodes comprising three-dimensional semiconductor elements of nanometric or micrometric size, in particular microwires or nanowires or pyramid-shaped structures covered with active layers. Indeed, for such optoelectronic devices 22, carrying out the separation of the electronic devices 22 using the formation of grooves that the plate containing the electronic devices 22 is fixed to the first handle causes significant deterioration of the light-emitting diodes close to the desired cutting lines.

[0079] The term "microwire" or "nanowire" designates a three-dimensional structure of elongated shape in a preferred direction of which at least two dimensions, called minor dimensions, are between 5 nm and 5 pm, preferably between 100 nm and 2 pm, more preferably between 200 nm and 1.5 pm, the third dimension, called major dimension or height, being greater than or equal to 1 time, preferably greater than or equal to 3 times and even more preferably greater than or equal to 5 times, the largest of the minor dimensions. In certain embodiments, the height of each microwire or nanowire may be greater than or equal to 500 nm, preferably between 1 pm and 50 pm. In the remainder of the description, the term "wire" is used to mean "microwire or nanowire".

[0080] The cross-section of the wires may have different shapes, for example, an oval, circular or polygonal shape, including triangular, rectangular, square or hexagonal. It will be understood that the term "average diameter" used in relation to a cross-section of a wire designates a quantity associated with the area of ​​the wire in this cross-section, corresponding, for example, to the diameter of the disc having the same area as the cross-section of the wire.

[0081] In the remainder of the description, the term pyramid designates a three-dimensional structure, part of which is pyramidal or elongated conical in shape. This pyramidal structure may be truncated, that is to say that the top of the cone is absent, leaving a plateau. The base of the pyramid is inscribed in a square whose side dimensions are from 100 nm to 10 pm, preferably between 0.2 pm and 2 pm. The polygon forming the base of the pyramid may be a hexagon. The height of the pyramid between the base of the pyramid and the apex or the summit plateau varies from 100 nm to 20 pm, preferably between 200 nm and 2 pm.

[0082] In the remainder of the description, embodiments will be described in the case of an optoelectronic device with light-emitting diodes comprising microwires or nanowires. However, it is clear that these embodiments may relate to an optoelectronic device with light-emitting diodes comprising pyramids of micrometric or nanometric size.

[0083] The wires comprise in majority, preferably more than 60% by mass, more preferably more than 80% by mass, at least one semiconductor material. The semiconductor material may be silicon, germanium, silicon carbide, an IILV compound, an ILVI compound or a combination of at least two of these compounds.

[0084] Examples of Group III elements include gallium (Ga), indium (In), or aluminum (Al). Examples of IILN compounds are GaN, AIN, InN, InGaN, AlGaN, or AlInGaN. Other Group V elements may also be used, for example, phosphorus or arsenic. Generally, the elements in the IILV compound may be combined with different mole fractions. Examples of Group II elements include Group IIA elements, including beryllium (Be) and magnesium (Mg), and Group IIB elements, including zinc (Zn), cadmium (Cd), and mercury (Hg). Examples of Group VI elements include Group VIA elements, including oxygen (O) and tellurium (Te). Examples of ILVI compounds are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe or HgTe. Generally, the elements in the ILVI compound can be combined with different mole fractions.The semiconductor material of the wires may include a dopant, for example silicon providing N-type doping of an IILN compound, or magnesium providing P-type doping of an IILN compound.

[0085] [Fig. 18], [Fig. 19], [Fig.20], [Fig.21], [Fig.22], [Fig.23], [Fig.24], [Fig.25], [Fig.26], [Fig.27], [Fig.28], [Fig.29], and [Fig.30] are each a partial and schematic sectional view of the structure obtained at a step of an embodiment of a method for manufacturing the optoelectronic device 22.

[0086] [Fig. 18], [Fig. 19], [Fig.20], [Fig.21], [Fig.22], and [Fig.23] illustrate the fabrication of the plate 20 on the substrate 21 in the case where the plate 20 comprises several examples of the optoelectronic device 22 with nanowires or microwires.

[0087] [Fig. 18] is a partial and schematic sectional view of the structure obtained after the following steps: - formation, on a substrate 60 comprising opposite faces 62 and 64, the face 62 preferably being flat at least at the level of the light-emitting diodes, of a seed layer 66 made of a material promoting the growth of wires and arranged on the face 62; - formation of a stack of two insulating layers 68 and 70 covering the seed layer 66 and comprising openings 72 exposing portions of the seed layer 66; and - growth, for each opening 72, of a light-emitting diode LED in contact with the seed layer 66 through the opening 72, six light-emitting diodes LED of a single optoelectronic device 22 being represented by way of example in [Fig. 18], the light-emitting diodes LED being arranged in sets of light-emitting diodes LED.

[0088] [Fig. 19] is a partial and schematic sectional view of the structure obtained after the following steps: - formation of an insulating layer 74 extending on the lateral sides of a lower portion of each light-emitting diode LED and extending on the insulating layer 70 between the light-emitting diodes LED; - formation of a layer 76 forming an electrode covering each light-emitting diode LED and further extending over the insulating layer 74 between the light-emitting diodes LED; - formation of a protective dielectric layer 78 extending over the layer 76; and - formation of a planarization layer 80 extending over the layer 78 and having a flat free face 81.

[0089] [Fig.20] is a partial and schematic sectional view of the structure obtained after the following steps: - fixing a handle 82 to the face 81; and - removal of the substrate 60, and of the seed layer 66, by any known means.

[0090] [Fig. 21] is a partial and schematic sectional view of the structure obtained after the formation, on the insulating layer 68, of an interconnection structure 83 comprising a stack 84 of insulating layers and conductive tracks 86 of different metallization levels, conductive tracks 86 of two metallization levels being shown as an example in [Fig. 21], and conductive vias 88 extending through the stack 84 of insulating layers, the insulating layer 68, and the insulating layer 74, and connecting the electrode layer 76 to the conductive tracks 86, the interconnection structure 83 having a preferably planar free face 90.

[0091] [Fig.22] is a partial and schematic sectional view of the structure obtained after a step of fixing the substrate 21 to the face 90, for example by molecular bonding.

[0092] [Fig.23] is a partial and schematic sectional view of the structure obtained in the following steps: - removal of handle 82 by any known means; - etching the insulating layer 80 at certain sets of LED light-emitting diodes to expose these sets of LED light-emitting diodes, and between the sets of LED light-emitting diodes, the insulating layer 80 being retained for the other sets of LED light-emitting diodes; - formation of photoluminescent blocks 94, 96 covering the sets of exposed light-emitting diodes LED, two photoluminescent blocks 94, 96 being shown as an example in [Fig.23]; - formation of reflective walls 98 between blocks 94, 96; - formation of an encapsulation layer 100 covering each block 94, 96, and the protective dielectric layer 78 between the blocks 94, 96, the encapsulation layer 100 comprising the unetched parts of the insulating layer 80; and - formation, in the encapsulation layer 100, of at least one color filter 102, for example a single yellow filter, covering at least some of the photoluminescent blocks 94, 96, a single filter 102 covering the two photoluminescent blocks 94, 96 being represented by way of example in [Fig.23].

[0093] The structure resting on the substrate 21 forms the plate 20 described previously and the free face 23 of the encapsulation layer 100 corresponds to the face 23 described previously.

[0094] [Fig.24] is a partial and schematic sectional view illustrating the step described previously in relation to [Fig.5] comprising the fixing by gluing of the face 23 of the plate 20 to the first handle 5 by the layer of glue 30. In [Fig.24], the first handle 5 is shown here with two grooves 8.

[0095] [Fig.25] is a partial, schematic sectional view illustrating the step described previously in relation to [Fig.6] comprising the removal of the substrate 21.

[0096] [Fig.26] is a partial and schematic sectional view of the structure obtained after a step of forming openings 106 in the stack 84 of insulating layers to expose conductive tracks 86.

[0097] [Fig.27] is a partial and schematic sectional view of the structure obtained after a step of forming conductive pads 108 in contact with the conductive tracks 86 exposed through the openings 106, a single conductive pad 108 being shown as an example in [Fig.27]. Each conductive pad 108 may have a single-layer or multi-layer structure.

[0098] [Fig.28] is a partial, schematic, sectional view illustrating the step previously described in relation to [Fig.7] comprising etching trenches 32 in the plate 20 at the desired separation lines of the electronic devices 22.

[0099] [Fig.29] is a partial, schematic sectional view illustrating the step described previously in relation to [Fig.9] comprising the removal of the second handle 15 and the layer of glue 16.

[0100] [Fig. 30] is a partial and schematic sectional view illustrating the step described previously in relation to [Fig. 10] comprising the breaking of the first handle 5 at the grooves 8 to separate the optoelectronic devices 22.

[0101] [Fig. 31] represents an embodiment of the LED light-emitting diodes. According to one embodiment, each LED light-emitting diode comprises a wire 110 in contact with the seed layer 66 through one of the openings 72 and a shell 112 comprising a stack of semiconductor layers covering the side walls and the top of the wire 110. Such a configuration is called radial. The assembly formed by each wire 110 and the associated shell 112 constitutes the LED light-emitting diode. In [Fig. 31], a reflective layer 114, for example metallic, is also shown covering the electrode layer 76 between the wires 110 and in direct physical contact with the electrode layer 76.

[0102] The shell 112 may comprise a stack of several layers including in particular an active layer 116 and a bonding layer 118. The active layer 116 is the layer from which the majority, preferably all, of the radiation provided by the light-emitting diode LED is emitted. According to one example, the active layer 116 may comprise confinement means, such as a single quantum well or multiple quantum wells. The bonding layer 118 may comprise a stack of semiconductor layers of the same IILV material as the wire 110 but of the opposite conductivity type to the wire 110.

[0103] [Fig. 32] represents an embodiment of the LED light-emitting diodes. The LED light-emitting diode represented in [Fig. 32] comprises all of the elements of the LED light-emitting diode represented in [Fig. 31] with the difference that the shell 112 is only present at the top of the wire 110. Such a configuration is called axial.

[0104] The formation of the LED light-emitting diodes, i.e. the growth of the wires 110 in the openings 72, and the formation of the shells 112 covering the wires 110 can be carried out for example by organometallic chemical vapor deposition (MOCVD) or any other suitable method.

[0105] The seed layer 66 is made of a material that promotes the growth of the wires. For example, the material composing the seed layer 66 may be a nitride, a carbide or a boride of a transition metal from column IV, V or VI of the periodic table of elements or a combination of these compounds.

[0106] According to another embodiment, the seed layer 66 may not be present. According to another embodiment, the seed layer 66 may be replaced by seed pads, for example formed at the bottom of the openings 72.

[0107] [Fig. 33] shows an embodiment of the LED light-emitting diodes. The LED light-emitting diode shown in [Fig. 33] has a two-dimensional structure in that it is manufactured by forming a stack of substantially planar semiconductor layers on the substrate 60 followed by delineating the light-emitting diode, for example by etching trenches in the stack of semiconductor layers. The light-emitting diode shown in [Fig. 33] comprises a semiconductor layer 120 doped with a first conductivity type, covered with an active layer 122, itself covered with a semiconductor layer 124 doped with a second conductivity type.

[0108] The substrate 60 may correspond to a single-piece structure or correspond to a layer covering a support made of another material. The substrate 60 is preferably a semiconductor substrate, for example a substrate made of silicon, germanium, silicon carbide, a III-V compound, such as GaN or GaAs, or a ZnO substrate. Preferably, the substrate 60 is a monocrystalline silicon substrate. The substrate 60 may correspond to a multilayer structure of the silicon-on-insulator type, also called SOI (English acronym for Silicon On Insulator).

[0109] Each insulating layer 68, 70, 74, 78, 80, and the encapsulation layer 100 may be made of a dielectric material, for example silicon oxide (SiO2), silicon nitride (SixNy, in particular with x and y approximately equal to 1, for example SiN, or with x approximately equal to 3 and y approximately equal to 4, for example Si3N4), silicon oxynitride (in particular of general formula SiOxNy), aluminum oxide (A12O3), hafnium oxide (HfO2), titanium dioxide (TiO2) or diamond. Each insulating layer 68, 70, 74, 78, 80 may have a single-layer structure or correspond to a stack of two layers or more than two layers.

[0110] The electrode layer 76 is adapted to allow the electromagnetic radiation emitted by the light-emitting diodes to pass through. The material forming the electrode layer 76 may be a transparent and conductive material such as indium-tin oxide (or ITO, acronym for Indium Tin Oxide), or zinc oxide doped with aluminum or gallium. The thickness of the electrode layer 76 may be between 0.01 μm and 1 μm.

[0111] According to one embodiment, each photoluminescent block 94, 96 is located opposite one of the light-emitting diodes or a set of light-emitting diodes. Each photoluminescent block 94, 96 comprises phosphors adapted, when excited by light emitted by the associated light-emitting diode (LED), to emit light at a wavelength different from the wavelength of the light emitted by the associated light-emitting diode (LED).

[0112] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art.

[0113] Finally, the practical implementation of the embodiments and variants described is within the reach of those skilled in the art from the functional indications given above.

Claims

Claims

1. A method of manufacturing an electronic device (22), comprising the following steps: - forming, in a first handle (5) having first and second opposite faces (6, 7), grooves (8) in the first face (6); - attaching the first handle (5) to a second handle (15) on the side of the first face (6); - thinning the first handle (5) on the side of the second face (7); - manufacturing a plate (20) comprising several copies of the electronic device (22); - attaching the plate (20) to the second face (7) of the first handle (5); - forming trenches (32) in the plate (20) in the extension of the grooves (8); - removing the second handle (15); and - breaking the first handle (5) at the bottom of the grooves (8) to separate the electronic devices (22).

2. A method according to claim 1, wherein the grooves (8) are formed by laser engraving.

3. Method according to claim 1 or 2, wherein the fixing of the first handle (5) to the second handle (15) is carried out by gluing with a first layer of glue (16).

4. Method according to claim 3, wherein the step of removing the second handle (15) further comprises a step of removing, totally or partially, the first layer of glue (16).

5. Method according to any one of claims 1 to 4, in which the fixing of the plate (20) to the first handle (5) is carried out by gluing with a second layer of glue (30).

6. The method of claim 5, wherein the trenches (32) further extend into the second glue layer (30).

7. Method according to any one of claims 1 to 3, in which the fixing of the plate (20) to the first handle (5) is carried out by molecular bonding.

8. A method according to any one of claims 1 to 7, wherein the trenches (32) are formed by etching the plate (20) by dry etching or wet etching.

9. A method according to any one of claims 1 to 8, wherein the step of attaching the plate (20) to the first handle (5) comprises a step of positioning first marks of the first handle (5) relative to second marks of the plate (20), so that each electronic device (22) to be separated is positioned between four grooves (8) among the grooves (8).

10. A method according to any one of claims 1 to 9, wherein the first handle (5) is at least partly made of glass, quartz, or sapphire.

11. A method according to any one of claims 1 to 10, wherein, in projection in a plane parallel to the second face (7), one of the grooves (8) is located between each pair of adjacent electronic devices (22).

12. Structure comprising: - a first handle (5) having first and second faces (6, 7) and grooves (8) in the first face (6); - a plate (20) comprising several copies of an electronic device (22) fixed to the first handle on the side of the second face (7); and - a second handle (15) fixed to the first handle (5) on the side of the first face (6).

13. A structure according to claim 12, further comprising a first layer of glue (16) between the first handle (5) and the second handle (15).

14. Structure according to claim 12 or 13, further comprising a second layer of glue (30) between the plate (20) and the first handle (5).

15. Structure according to any one of claims 12 to 14, in which, in projection in a plane parallel to the second face (7), one of the grooves (8) is located between each pair of adjacent electronic devices (22).

16. Structure according to any one of claims 12 to 15, in which the grooves (8) delimit pads (11) in the first handle (5), each pad (11) being opposite only one of the electronic devices (22).

17. An electronic system (40) comprising an electronic device (22) obtained by the manufacturing method according to any one of claims 1 to 16, the electronic device (22) having a first side wall (34) and a block (36) having first and second opposite faces (6, 7) and a second side wall (10), the electronic device (22) being fixed to the second face (7), the electronic system (40) further comprising flanks (41) containing the first side wall (34), the second side wall (10) and a portion (42) connecting the first side wall (34) to the second side wall (10) projecting relative to the first side wall (34) and relative to the second side wall (10).

18. An electronic system according to claim 17, wherein the electronic device (22) comprises light emitting diodes (LEDs).

19. An electronic system according to claim 18, wherein each light-emitting diode (LED) comprises a three-dimensional semiconductor element (110) of nanometric or micrometric size, corresponding to a microwire, a nanowire or a structure of nanometric or micrometric size of pyramidal shape, and an active layer (112) covering the three-dimensional semiconductor element (110).

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