Transistor MOSFET

Abstract

MOSFET Transistor The present description relates to a transistor (200) comprising a channel region (224) extending in a first direction (X) between a drain region (121) and a source region (122) of a semiconductor layer (120) and a gate structure (230) overlying the channel forming region and comprising a gate insulator (231) overlying a gate region (132); - the channel forming region (224) comprising a first epitaxial channel region (224A) having a first length (L1) in the first direction, and a second channel region (224B) in the semiconductor layer, the first channel region being between the second channel region and the gate structure;and - the gate insulator comprising first portions (231A) of a first thickness (e1) on either side of the first channel region (224A), and a second portion (231B) of a second thickness (e2) on the first channel region (224A), the second thickness being less than the first thickness. Figure for abstract: Fig. 2A;

Claims

direction (X), for example the grid region is centered relative to the first channel region.

11. Transistor (200) according to any one of claims 1 to 3, 8 to 10, wherein a non-zero distance (Ov) separates a side wall (132A) of the gate region (132) and the second portion (231B) of gate insulator, for example the distance (Ov) is between 70 and 100 nm, or between 80 and 90 nm.

12. A transistor (200) according to claim 11 as dependent on claim 3, wherein the distance (Ov) is greater than an overlap length (Xj) of the lightly doped drain region (125) under the gate region (132).

13. A transistor (200) according to any one of claims 1 to 3, 8 to 12, wherein the first epitaxial channel region (234A) is made of silicon or a silicon-germanium alloy.

14. A transistor (200) according to any one of claims 1 to 3, 8 to 13, wherein the gate insulator (231) is made of a silicon oxide, for example silicon dioxide, and / or the semiconductor layer (120) is made of silicon.

15. Electronic device comprising at least one transistor according to any one of claims 1 to 3, 8 to 14.

16. Radio frequency switch comprising at least one transistor according to any one of claims 1 to 3, 8 to 14. FIG. 1 [Fig. 2A] FIG. 2A [Fig. 2B] 120 FIG. 2B [Fig. 3A] Z FIG. 3A [Fig. 3B] 304 Z FIG. 3B [Fig. 3C] 224A 231A' 224B Z FIG. 3C [Fig. 3D] 231B 224A FIG. 3D [Fig. 3E] FIG. 3E

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