UNIVERSAL GATE PROTECTION DIODE

Abstract

A MOS device (100) comprises, in a DP (N or P) doped substrate (100), a MOS capacitor (130, 139) having a well (131) and a gate (132), and a gate protection diode (110) comprising a DP doped diffusion region (112) and adapted to be connected to the gate, and a body or well (111) doped with another type DI of doping. The diode (110) is improved in that its well (111) is distinct from that of the MOS capacitor. Furthermore, a first DP doped ring (160) is placed between the diode (110) and the MOS capacitor (130, 139), and a second DI doped ring (170) is placed between the first barrier and the MOS capacitor. The improved diode allows the gate (132) of the MOS capacitor (130, 139) to be used in both forward and reverse polarizations without excess power consumption. Figure for abstract: Figure 7

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