Bipolar transistor
FR3161305A1Pending Publication Date: 2025-10-17STMICROELECTRONICS INT NV
Patent Information
- Application Number
- FR2024003824
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-04-12
- Publication Date
- 2025-10-17
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Abstract
Bipolar Transistor The present description relates to a method for manufacturing a bipolar transistor comprising the following successive steps: a) depositing, on a face (101T) of a semiconductor substrate (101), a stack comprising a first insulating layer (103) coating the semiconductor substrate and a second insulating layer (201) coating the first insulating layer; b) forming a trench (301) extending through the entire thickness of the stack; c) forming, in a first part of the trench (301) delimited laterally by the first insulating layer, a collector region (303) of the transistor; d) widening a second part of the trench delimited laterally by the second insulating layer; and e) forming, in the second part of the trench, a base region of the transistor. Figure for abstract: Fig. 4
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Citation Information
Patent Citations
Method of manufacturing a bipolar transistor and bipolar transistor capable of being obtained by such a method
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