Enhanced Light Extraction Optoelectronic Device

Abstract

Title: Optoelectronic Device with Enhanced Light Extraction The invention relates to a method for manufacturing an optoelectronic device (1). The method first comprises providing a stack including a substrate (10) whose upper face extends along a longitudinal (XY) plane, a first diode (100a) and a second diode (100b) separated in pairs by a trench (1000). A mirror (500) is then formed in the trench (1000) having a first edge (500a) and a second edge (500b) oriented respectively with respect to the first and second diodes, each forming a reflective interface for light emitted or received by the diodes, such that the reflective interfaces each form a so-called angle of reflection with the longitudinal (XY) plane, measured in the mirror (500), of less than 89°. Figure for the abstract: Fig. 2N

Description

Title of the invention: Enhanced light extraction optoelectronic device technical field

[0001] The present invention relates to the field of microelectronics and optoelectronics technologies, in particular the fabrication of light-emitting or light-receiving diode arrays such as LEDs (Light-Emitting Diodes), and especially micro-LEDs. Its particularly advantageous, but not limiting, applications include micro-LED display systems and optical communication systems. STATE OF THE ART

[0002] During the manufacture of a diode, and particularly a micro-diode, it is common to form a mirror on its side walls. Such a mirror has two main functions: to avoid the phenomenon of optical crosstalk between LEDs when they are networked and to increase the extraction or detection of light emitted or received by the LED.

[0003] A known method for fabricating high-density LED arrays is to transfer an epitaxial substrate onto a support substrate, and then isolate the LEDs by forming trenches in the epitaxial substrate. The mirrors bordering the LEDs are then typically obtained by filling the trenches between the LEDs with a suitable material.

[0004] In this process, the trenches are typically created by anisotropic plasma etching to produce LEDs with flanks nearly perpendicular to the substrate. However, it has been observed in practice that after such etching, the LED flanks are not perpendicular to the substrate, as expected, but are inclined, giving the LEDs a flared shape towards the substrate, as shown in the view reproduced in [Fig. 1A]. By subsequently depositing a reflective material in the trenches ([Fig. 1B]), the mirror will be inclined, oriented towards the substrate (reflection angle afl), and will therefore, in the case of an emitting diode, redirect the light emitted by the LED towards the substrate. This situation is detrimental to light extraction from the top face of the emitting LED.In the case of a receiving diode, this reduces the light reception area, which is detrimental to detection efficiency.

[0005] Moreover, this etching process tends to reduce the emissive surface or the receiving surface of the LED, i.e. here the surface of its upper face, which further minimizes the emitted light intensity or the detection of light.

[0006] Another approach involves forming mirrors between the LEDs, not against their side walls but on an element located between two adjacent LEDs. Such a method is described in particular in US patent 2021328116 AL. However, this approach requires significant spacing between adjacent LEDs and therefore does not allow for the fabrication of high-density micro-LED arrays.

[0007] There is therefore a need to improve light extraction or light reception within a micro-LED array. Preferably, this improvement would be achieved without having to accept a significant reduction in array density or an increase in optical crosstalk. SUMMARY

[0008] To achieve this objective, a first aspect of the invention relates to a method for manufacturing an optoelectronic device comprising the following steps: • provide a stack comprising: i. a substrate having a top surface extending mainly in a plane called the longitudinal plane, ii. an array of photoemitting or photoreceiving diodes arranged on the upper surface of the substrate, at least one first diode and one second diode of the array being separated by a trench, • to form a mirror in the trench based on a first metallic material, the formation of the mirror comprising a step of deposition of the first metallic material in vapor phase,

[0009] Advantageously, the dimensions of the trench and at least one deposition parameter of the first vapor-phase metallic material are configured so that the mirror exhibits: • a first flank oriented towards the first diode, forming an interface called the first reflection interface for light emitted or received by the first diode, • a second flank oriented towards the second diode, forming an interface called the second reflection interface for light emitted or received by the second diode,

[0010] such that the first and second reflective interfaces each form a so-called reflection angle with the longitudinal plane, measured in the mirror, of less than 89°, so that the first and second reflective interfaces move away from the first diode and the second diode in the longitudinal plane as they move away from the substrate.

[0011] In the case of an emitting diode, the reflective interfaces defined by the sides of the mirror allow the light emitted by the first and second LEDs to be reflected, as the light is not directly extracted from their upper faces. The inclination of the reflective interfaces redirects this light towards the upper faces, thus facilitating its extraction. The light extraction from the first and second LEDs is thereby significantly improved.

[0012] In the case of a receiving diode, the reflective interfaces defined by the sides of the mirror allow light arriving near or on the diodes to be reflected towards the active areas of the first and second diodes, but not towards their respective active areas. The inclination of the reflective interfaces allows this light to be redirected towards the active areas and thus facilitates its detection. The light detection of the first and second diodes is thereby greatly improved.

[0013] Furthermore, reflecting the light emitted or received by the first diode towards its side prevents it from interfering with the light emitted or received by the other diodes in the array, and in particular by the second diode (or vice versa). The phenomenon of optical crosstalk between the diodes in the array is thus limited or even eliminated.

[0014] The deposition parameter can in particular be taken from: the distance between the target (source of first metallic material) and the stack during deposition, the deposition pressure, the use of collimation between the target and the stack during deposition, the deposition of ions rather than neutral species.

[0015] A second aspect of the invention relates to an optoelectronic device comprising: • a substrate having a top surface extending mainly in a plane called the longitudinal plane, • an array of photoemitting or photoreceiving diodes arranged on the upper surface of the substrate, with at least one first diode and one second diode of the array separated by a trench,

[0016] Advantageously, the trench comprises a mirror made of a first metallic material, the mirror having: • a first flank opposite the first diode, forming an interface called the first reflection interface for light emitted or received by the first diode, • a second flank opposite the second diode, forming an interface called the second reflection interface for light emitted or received by the second diode,

[0017] such that the first and second reflective interfaces each form a so-called reflection angle with the longitudinal plane, measured in the mirror, of less than 89°, such that the first and second reflective interfaces move away from the first and second diodes respectively in the longitudinal plane as they move away from the substrate. Preferably, the mirror extending throughout the entire volume defined between its first and second sides.

[0018] The advantages provided by the process according to the invention apply mutatis mutandis to the device according to the invention, and vice versa. BRIEF DESCRIPTION OF THE FIGURES

[0019] The aims, objects, features and advantages of the invention will become clearer from the detailed description of an embodiment thereof, which is illustrated by the following accompanying drawings in which:

[0020] [Fig. 1 A] [Fig. 1 A] shows a view of a diode obtained by plasma etching anisotropic.

[0021] [Fig.1B] Fig.1B represents a view of a mirror formed between two diodes obtained by anisotropic plasma etching.

[0022] [Fig.2A] Figures 2A to 2N illustrate different embodiments of the process according to the invention.

[0023] [Fig.2B]

[0024] [Fig.2C]

[0025] [Fig.2D] Figures 2D, 2E and 2F illustrate the non-conforming deposition of the dielectric layer on the sides of the diodes.

[0026] [Fig.2E]

[0027] [Fig.2F]

[0028] [Fig.2G] The [Fig.2G] illustrates the conformal deposition of the dielectric layer on the sides of the diodes.

[0029] [Fig.2H]

[0030] [Fig.2I]

[0031] [Fig.2J]

[0032] [Fig.2K] Figures 2K and 2M illustrate an embodiment in which the mirror is electrically isolated from the common electrode above the diodes.

[0033] [Fig.2L] Figures 2L and 2N illustrate an embodiment in which the mirror is part of the electrode common to the diodes.

[0034] [Fig.2M]

[0035] [Fig.2N]

[0036] The drawings are given by way of example and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate understanding of the invention and are not necessarily to scale with practical applications. In particular, the dimensions are not representative of reality. DETAILED DESCRIPTION

[0037] Before proceeding to a detailed review of embodiments of the invention, optional features that may be used in combination or alternatively are listed below:

[0038] According to a preferred embodiment, the first diode and the second diode each have a flank facing the mirror, and the method further comprises the deposition of a dielectric layer based on a first dielectric material and covering said flanks of the first diode and the second diode.

[0039] The dielectric layer provides, in particular, electrical insulation between the first and second diodes. It preferably extends along the entire height of the sides of both the first and second diodes. It also preferably extends over the top face of the diodes, and preferably also to the bottom of the trench, typically in contact with the top face of the substrate. It is preferably continuous. In this way, the electrical insulation between the diodes is optimal.

[0040] According to one example, the dielectric layer is based on at least one of the following materials: SiO2, SiN, SiON, Al2O3, AIN. It may also be a stack comprising at least one of these materials.

[0041] According to a preferred example, the dielectric layer has a first outer flank opposite the first flank of the mirror and a second outer flank opposite the second flank of the mirror, and the deposition of the dielectric layer includes a non-conforming deposition on the flank of the first diode and on the flank of the second diode, the parameters of the non-conforming deposition being set so that the first and second outer flanks of the dielectric layer move away from the first and second diodes respectively in the longitudinal plane as they move away from the substrate. This gives the remaining space of the trench, in cross-section in the XZ plane, a trapezoidal shape that is particularly advantageous for the formation of the inclined flanks of the mirror. Consequently, such a non-conforming deposition of the dielectric layer improves light extraction and capture.The non-conformity of the deposit, usually considered a disadvantage, is here used as an advantage to achieve the desired inclination of the reflection interfaces.

[0042] According to another embodiment, the dielectric layer is deposited conformally on the side of the first diode and on the side of the second diode.

[0043] According to one example, said parameters of the non-conforming deposit include in particular: a deposition temperature, a deposition pressure, a deposition power and a deposition angle measured between a flow of deposited species and the longitudinal plane.

[0044] According to an advantageous embodiment, the method further comprises, before mirror formation, the deposition of a perforated mask on each of the diodes, the perforated mask extending partially overhanging the trench. The perforated mask may, for example, be based on a dielectric material such as SiO2, SiN, SiON, Al2O3, AlN, or on a metallic material such as copper, aluminum, gold, silver, nickel, platinum, titanium, or titanium nitride. The perforated mask is deposited on the upper surface of the diodes. The perforated mask may also be referred to as a shadow mask.

[0045] When the dielectric layer is deposited on the top surface of the diodes, the perforated mask is preferably deposited above the dielectric layer. The deposition of the perforated mask therefore preferably occurs after the deposition of the dielectric layer.

[0046] The overhang formed by the perforated mask makes it easier to form the mirror in the advantageous shape which improves light extraction and capture.

[0047] According to an advantageous embodiment, the process further comprises, after the formation of the mirror, the formation of a reflective metallic coating on the first and second sides of the mirror, the metallic coating being based on a second reflective metallic material, distinct from the first metallic material.

[0048] The second metallic material preferably has a maximum reflection coefficient located in a wavelength range distinct from that in which the maximum reflection coefficient of the first metallic material is located.

[0049] For example, the first and second metallic materials can be chosen so that one reflects red light particularly well, and the other blue light. Copper, for instance, is an excellent example of a first or second metallic material to ensure a very good level of red light reflection.

[0050] By superimposing two metallic layers in this way, each having maximum reflection coefficients in distinct ranges, a very good level of reflection can be ensured over a wide range of wavelengths. It is then unnecessary to choose between good reflection for a narrow range of wavelengths and average reflection ensured for a wider range of wavelengths.

[0051] This variant is particularly advantageous when, on the same initial stack, diodes emitting in distinct colors are formed. It is then unnecessary to adapt the nature of the first metallic material to the nature of the neighboring diodes, which would be complex to implement and disadvantageous in terms of time and cost.

[0052] Light extraction (or light capture) is thus improved for the whole diode matrix, even if it includes diodes of different types.

[0053] It is also possible to deposit a second reflective metallic coating based on a third reflective metallic material, distinct from the first and second reflective metallic materials, in order to further broaden the range of wavelengths in which a very good level of reflection is achieved. The three selected metallic materials will advantageously reflect red light, blue light, and green light, respectively.

[0054] If this variant incorporating one or two coating layers is not chosen, aluminium may be chosen for example as the first metallic material, which constitutes a good compromise and allows satisfactory reflection for red, green and blue lights.

[0055] According to an advantageous embodiment, the process further comprises, after the formation of the mirror, a step of filling the trench with a second dielectric material, preferably identical to the first dielectric material.

[0056] According to an advantageous embodiment, the first diode and the second diode each have a top face, and the method further comprises the formation of a common electrode in contact with the top faces of the diodes and separated from the mirror by the second dielectric material, the common electrode being based on an electrically conductive material and transparent in a range of wavelengths in which the first diode and the second diode emit or receive light.

[0057] In this example, the common electrode and the mirror are electrically isolated by the second dielectric material. Furthermore, before reaching the mirror, the light emitted by the diodes propagates only through dielectric materials, or even through a single dielectric material. This limits unwanted reflections between the light emitted by the diodes and its reflection from the mirror. These unwanted reflections could occur at angles less favorable than that permitted by the mirror. Light extraction is therefore improved. A similar observation can be made in the case of photoreceptor diodes. is made for light reflected against the mirror and directed towards the diodes: light detection is improved.

[0058] According to an advantageous embodiment, the method further comprises, after the formation of the mirror, a step of filling the trench with an electrically conductive and transparent material in a range of wavelengths in which the first diode and the second diode emit or receive light.

[0059] According to an advantageous embodiment, the first diode and the second diode each have a top face and the electrically conductive material is also deposited in contact with the top faces of the diodes, so as to form a continuous layer forming with the mirror a common electrode of the diodes.

[0060] In this example, the continuous layer of electrically conductive material and the mirror are electrically continuous and form a common electrode. Including the mirror at the common electrode thus creates a more conductive electrical path than that formed by the deposit of the electrically conductive material. This improves the response time of the device.

[0061] According to a preferred example, the angle of reflection is less than 85°, preferably less than 70°.

[0062] According to one example, the first metallic material is taken from among the following materials: copper, aluminum, titanium, titanium nitride, gold, silver, nickel and platinum.

[0063] According to a preferred example, the first diode and the second diode each have a flank facing the mirror, the device further comprising a dielectric layer based on a first dielectric material and covering said flanks of the first diode and the second diode.

[0064] According to a preferred embodiment of the device, the dielectric layer has a first outer flank opposite the first flank of the mirror and a second outer flank opposite the second flank of the mirror, the first outer flank and the second outer flank of the dielectric layer moving away from the first diode and the second diode respectively in the longitudinal plane as they move away from the substrate.

[0065] According to a preferred embodiment, the device further comprises a conductive filling layer extending between the dielectric layer and the mirror, the conductive filling layer being based on an electrically conductive material and transparent in a range of wavelengths in which the first diode and the second diode emit or receive light.

[0066] According to a preferred embodiment, the first diode and the second diode each have a top face and the conductive filling layer extends until the upper faces of the diodes come into contact, and thus forms a continuous layer which together with the mirror forms a common electrode for the diodes.

[0067] According to one example, the dielectric layer is based on at least one of the following materials: SiO2, SiN, SiON, A12O3.

[0068] According to an advantageous example, the substrate comprises a plurality of metallic vias, each metallic via being underlying, in a transverse direction perpendicular to the longitudinal plane, a separate diode, and in electrical conduction with said diode.

[0069] This patent application may apply to both a photoreceiving diode and a photoemitting diode (as well as to arrays of such diodes). The term "diode" is therefore understood interchangeably as "photoreceiving diode" or "photoemitting diode." In this patent application, the terms "photoemitting diode," "light-emitting diode," and "LED" are used synonymously. A "diode" may also be understood as a "microdiode." A "microdiode" is a diode whose dimensions do not exceed 1 mm (1 mm = 10³ m).

[0070] In this application, a layer is understood to be transparent in a given wavelength range when it has a transmittance greater than or equal to 70%, preferably greater than 90%, preferably greater than or equal to 95%. In other words, it has an absorbance less than or equal to 30%, preferably less than or equal to 10%, preferably less than or equal to 5% in that range.

[0071] It is specified that, within the framework of the present invention, the terms "on", "overcomes", "covers", "underlying", "opposite" and their equivalents do not necessarily mean "in contact with". Thus, for example, the depositing, transferring, gluing, assembling or applying a first layer on a second layer does not necessarily mean that the two layers are directly in contact with each other, but means that the first layer at least partially covers the second layer by being either directly in contact with it or by being separated from it by at least one other layer or at least one other element.

[0072] A layer may also be composed of several sub-layers of the same material or of different materials.

[0073] A substrate, layer, or device "based" on a material M means a substrate, layer, or device comprising only that material M or that material M and possibly other materials, for example alloying elements, impurities, or dopant elements.

[0074] The term "selective etching with respect to" or "etching exhibiting selectivity with respect to" means an etching configured to remove a material A or a layer A with respect to a material B or a layer B, and exhibiting a speed of The selectivity is the ratio of the etching speed of material A to the etching speed of material B. The selectivity between A and B is denoted SA:B.

[0075] A frame of reference, preferably orthonormal, comprising the axes X, Y, Z is shown in figures 2A to 2N. The Z direction may be designated as the "stacking direction".

[0076] In this patent application, the terms thickness for a layer and height for a structure or device will preferably be used. Height is measured perpendicular to the longitudinal plane XY. Thickness is measured in a direction normal to the principal plane of extension of the layer. Thus, a layer typically has a thickness along Z when it extends mainly along the longitudinal plane XY, and a projecting element, for example an insulation trench, has a height along Z. The relative terms "on," "under," "above," "below," and "underlying" preferably refer to positions measured along the Z direction.

[0077] The terms "approximately", "about", "in the order of" mean "within 10%, preferably within 5%".

[0078] Several embodiments of the process according to the invention will now be described with reference to figures 2A to 2N.

[0079] Fig. 2A illustrates the provision of a substrate 10. This is typically a substrate 10 comprising an integrated circuit, which can be designated ASIC, from the English "Application Specified Integrated Circuit" (in French "circuit intégré pour une application spécifique").

[0080] The substrate 10 has a top face 11 extending mainly in a plane parallel to the longitudinal plane XY.

[0081] The substrate 10 may for example include a flush layer 13 and a support substrate 14. The support substrate 14 may for example be a silicon substrate.

[0082] The substrate 10, typically the flush layer 13, preferably comprises a plurality of metallic vias 15 flush with the upper face 11 of the substrate 10. Each of these metallic vias 15 can be in contact with a metallic pad 16. The metallic vias 15 can, for example, be tungsten-based and the metallic pads can, for example, be copper- or aluminum-based.

[0083] Fig. 2B then illustrates the transfer, on the upper face 11 of the substrate 10, of an epitaxial substrate 100.

[0084] The epitaxial substrate 100 has a lower face 102 opposite the upper face 11 of the substrate 10 and an upper face 101 opposite its lower face 102. Both extend mainly in one of the planes parallel to the longitudinal plane XY. The epitaxial substrate 100 has, along the stacking direction Z, a thickness ei00. Typically, ei00 is between 100 nm and 10 pm.

[0085] The epitaxial substrate 100 is based on a semiconductor material. The epitaxial substrate 100 includes an active region 110. This active region 110 is the site of radiative recombinations of electron-hole pairs, enabling the emission (photoemitter) or absorption (photoreceptor) of light radiation. The active region 131 typically comprises a plurality of quantum wells, for example, formed by emissive layers based on GaN, InN, InGaN, AlGaN, AIN, AlInGaN, GaP, AlGaP, AlInGaP, AlGaAs, GaAs, InGaAs, AlInAs, or a combination of several of these materials.

[0086] In order to ensure the proper bonding of the epitaxial substrate 100 with the substrate 10, the transfer of the epitaxial substrate 100 can be done by bonding via an adhesion layer 50 extending between the upper face 11 of the substrate 10 and the lower face 102 of the epitaxial substrate 100. The adhesion layer 50 has a thickness e50 along the stacking direction Z.

[0087] As illustrated by the transition from [Fig. 2B] to [Fig. 2C], a lithography and etching step is then carried out to isolate a plurality of islands from the active layer 100. For the sake of simplicity, the flared shape given to the islands by this etching step is not shown in [Fig. 2C] and the following figures. Each of these islands forms a diode 100a, 100b, 100c, lOOd. Each diode 100a, 100b, 100c, lOOd comprises a portion of the active region 110 of the epitaxial substrate 100. The set of diodes 100a, 100b, 100c, lOOd is called a diode matrix 100a, 100b, 100c, lOOd.

[0088] The singularization of the diodes 100a, 100b, 100c, 100d is achieved by the formation of trenches 1000 within the epitaxial substrate 100. Each of these trenches 1000 traverses the epitaxial substrate 100 through its entire thickness 1100. If an adhesion layer 50 is located between the substrate 10 and the epitaxial substrate 100, the trenches 1000 preferably also traverse the adhesion layer 50 through its entire thickness e50. However, if the adhesion layer 50 is non-metallic, this precaution is not necessary.

[0089] Two adjacent diodes (for example, diodes referenced 100a and 100b in the figures) are separated by a trench 1000. If we consider a first diode 100a and a second diode 100b adjacent to each other, the trench 1000 separating them extends at least between one flank 150a of the first diode 100a and one flank 150b of the second diode 100b. These flanks 150a, 150b are opposite each other. Similarly, the other trenches 1000 extend at least between two flanks of two adjacent diodes.

[0090] Each trench 1000 has a width liooo, measured between the two sides 150a, 150b of the two diodes 100a, 100b between which it extends. The width liooo is illustrated in [Fig. 2C]. The width liooo corresponds to the smallest distance between these flanks 150a, 150b. The distance between the flanks 150a, 150b can vary along the stacking direction Z due to etching effects, we choose to measure the width liooo at the foot of the diodes 100a, 100b, that is to say in the plane parallel to the longitudinal plane XY including the diodes 100a, 100b closest to the substrate 10. In the case of flanks 150a, 150b having a curved shape in the longitudinal plane XY (for example if the diodes 100a, 100b have a circular shape in projection in the longitudinal plane XY), the width liooo is effective, in projection in the longitudinal plane XY, between a single point of the flank 150a of the first diode 100a and a single point of the flank 150b of the second diode 100b. In the case of parallel sides 150a, 150b, the width lloOo is effective over the entire extent of these two sides 150a, 150b.

[0091] Typically, liooo is less than 3 |am, preferably greater than 500 nm, preferably greater than 750 nm, and typically substantially equal to 1 pm.

[0092] Each trench 1000 also has a height h1Ooo, measured in projection in a plane parallel to the stacking direction Z. h1Ooo is preferably greater than 100 nm, and typically less than 10 pm.

[0093] A dielectric layer 200 is then advantageously deposited in the trenches 1000 so as to cover the sides 150a, 150b of the diodes 100a, 100b.

[0094] The dielectric layer 200 is deposited so as to have at least one lateral portion 200a covering at least part of the side 150a of the first diode 100a. It is preferably deposited so as to also have at least another lateral portion 200b covering at least part of the side 150b of the second diode 100b.

[0095] The lateral portions 200a, 200b of the dielectric layer 200 each have an inner edge 260a, 260b located opposite the first diode 100a and the second diode 100b, respectively. Preferably, the dielectric layer 200 is deposited in contact with the first diode 100a and the second diode 100b. Thus, the lateral portions 200a, 200b preferably extend respectively from the edge 150a of the first diode 100a and from the edge 150b of the second diode 100b. In this configuration, the inner edges 260a, 260b of the lateral portions 200a, 200b of the dielectric layer 200 and the edges 150a, 150b of the first and second diodes 100a, 100b are therefore identical. The lateral portions 200a, 200b of the dielectric layer 200 also have, respectively, a first outer edge 250a and a second outer edge 250b, opposite the inner edges 260a, 260b.

[0096] The dielectric layer 200 is preferably also deposited at the bottom of the trenches 1000, typically in contact with the upper face 11 of the substrate 10 when the trenches 1000 completely penetrate the adhesion layer 50 or when there is no a no adhesion layer 50. The portion of the dielectric layer 200 formed at the bottom of a trench 1000 is designated lower portion 200ab. It has a top face 201 AB extending mainly in a plane parallel to the longitudinal plane XY.

[0097] The dielectric layer 200 is furthermore advantageously deposited on the upper face 101 of the epitaxial substrate 100, which, at this stage of the process, is composed of the upper faces 101a, 101b, 101c, lOld of each of the diodes 100a, 100b, 100c, lOOd.

[0098] According to a first embodiment illustrated in figures 2D, 2E and 2F, the deposition of this dielectric layer 200 is carried out in a non-conforming manner.

[0099] Figure 2E is an enlargement of Figure 2D representing a trench 1000 separating a first diode 100a from a second diode 100b. This figure allows for a better visualization of how the dielectric layer 200 is deposited within a trench 1000. The following figures also focus on these two diodes 100a, 100b and the trench 1000 separating them, but it is understood that the various steps of the process can be applied to all the diodes 100a, 100b, 100c, 100d of the matrix and to all the trenches 1000.

[0100] In the first embodiment of the dielectric layer 200, the deposition thereof is configured so that its external sides 250a, 250b are inclined with respect to the stacking direction Z.

[0101] In order to allow the inclination of the external sides 250a, 250b, the deposition of the dielectric layer 200 advantageously includes a non-conforming deposit allowing the lateral portions 200a, 200b to be formed in a shape allowing this inclination.

[0102] In a perfectly conventional manner, a non-conforming deposit is characterized by the fact that the thickness of the deposited layer is not constant. This thickness, at any point of this layer, is measured perpendicular to the tangent to the layer or to the pattern underlying the conforming layer. In [Fig. 2E], it is clear that in this embodiment, the thickness e200a of the dielectric layer 200 at the top face of the diode 100 is greater than the thickness e2oob of the dielectric layer 200 at the top face of the diode 100. e200a is typically greater than 10 nm, for example, greater than 30 nm. e2Ooa is typically less than 1 pm, for example, less than 300 nm.

[0103] Preferably, the non-conforming deposit is made so that the outer flanks 250a, 250b have a constant slope. Thus, the thickness e200 of the dielectric layer increases continuously towards the opening of the trench 1000.

[0104] Such a deposition can be achieved by plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), or ion beam deposition (IBD). Regardless of the method chosen, its parameters are adjusted to obtain a non-conforming deposit. In particular, the following parameters are adjusted to obtain the desired non-conforming deposit: the deposition power, the pressure, the deposition temperature, and the deposition angle.

[0105] Several methods that can be used to form the dielectric layer 200 in a non-conforming manner are described below: • CVD deposition in a high-frequency generator (e.g., 13.56 MHz), at a power of 300 W, a pressure of 2.5 Torr, and a temperature of 240°C, for example, with N₂O as the oxidizing gas and preferably with silane (SiH₄) as the precursor gas. The oxidizing gas to precursor gas ratio is greater than or equal to 20, preferably greater than or equal to 80. • PVD deposition with a SiO2 target, a mixture of argon (30 sccm) and O2 (45 sccm), using a pulsed DC generator at 3000W, a pressure of 0.5 mT, and at ambient temperature. Deposition is preferably carried out along the Z stacking direction. • IBD deposition with a SiO2 target, krypton ions (4 sccm), a plasma generated with a radio frequency (RF) generator, a power of 700 W, a pressure of 0.45 mT, a deposition angle - i.e. the angle between the flow of species to be deposited and the longitudinal XY plane - of 5°, and at room temperature.

[0106] According to a second embodiment illustrated in [Fig.2G], the dielectric layer 200 is deposited in a conforming manner.

[0107] As illustrated in [Fig. 2F], it is possible to retain a lithography mask 60, such as a photosensitive resin mask, which was used to isolate the diodes by forming the trenches 100 (masking and photolithography steps not shown, taking place between Figures 2B and 2C). The dielectric layer 200 is then deposited on this mask 60. However, it is also possible to remove this mask and deposit the dielectric layer 200 directly onto the upper face 101a, 101b of the diodes 100a, 100b, as illustrated in Figures 2E and 2G, for example.

[0108] The dielectric layer 200 is based on a dielectric material. The dielectric material and the thickness of the dielectric layer 200 are chosen so that the dielectric layer 200 is transparent in the transmit or receive range. 100a, 100b, 100c, and 100d diodes. We speak of the emission range for photoemitting diodes and the reception range for photoreceiving diodes. To generally designate one or the other of these ranges, depending on the type of diode, we speak of the range of interest.

[0109] When the dielectric layer 200 is not deposited conformally and therefore does not have a constant thickness, the transparency of the dielectric layer 200 will be evaluated in its thickest portions. Typically, the dielectric layer 200 is thickest in its portions overlying the diodes 100a, 100b, 100c, 100d and / or at the point furthest from the substrate 10 of its lateral portions 200a, 200b.

[0110] The dielectric layer 200 may, in particular, be based on one of the following: SiO2, SiN, SiON or alumina. It may also be a stack of several of these materials.

[0111] Following the deposition of the dielectric layer 200, the following is advantageously predicted: A perforated mask 300 is deposited on the upper face 101a, 101b of the diodes 100a, 100b. As illustrated in [Fig. 2H], in projection onto the longitudinal XY plane, this perforated mask 300 extends beyond the upper faces 101a, 101b of the diodes 100a, 100b. It thus extends over the trench 100. Furthermore, in projection onto the longitudinal XY plane, it preferably extends beyond the lateral portions 200a, 200b of the dielectric layer 200. The perforated mask 300 thus forms a projection above the trench 1000. It defines a narrow opening above this trench 1000, which is particularly advantageous for the formation of the mirror 500 that will be described later.

[0112] The stack provided at the beginning of the process according to the invention can correspond to the stacks illustrated in figures 2D, 2E, 2F, 2G or 2H.

[0113] Following this supply step, a mirror 500 made of a first metallic material is formed in the trench 1000. The mirror 500 has the function of reflecting the light emitted by the diodes 100a, 100b or reflecting light arriving towards the device 1 in the direction of the diodes 100a, 100b. The first metallic material can in particular be chosen from the following materials: copper, aluminum, gold, silver, nickel, platinum, and titanium.

[0114] This mirror 500 is deposited by a vapor deposition process of the first metallic material. Once deposited, the mirror 500 has flanks 500a, 500b forming reflective interfaces. The deposit is configured so that the flanks 500a, 500b of the mirror 500 are inclined with respect to the stacking direction Z. The first flank 500a of the mirror 500, located opposite the first diode 100a, and the second flank 500b of the mirror 500, located opposite the second diode 100b, each form a reflection angle arefl, measured in the mirror 500. This angle The reflection angle (arefl) is preferably less than 89°. Advantageously, it is even less than 85° or even 70°, which allows for better light extraction (or detection, in the case of photoreceptor diodes).

[0115] The following parameters can be adapted to obtain such an inclination of the flanks 500a, 500b of mirror 500: • The dimensions of the trench 1000, and in particular hiooo and liooo- • At least one deposition parameter for the first metallic material, such as: i. The distance between the source of the first metallic material (target) and the stack supplied at the beginning of the process. Typically, this distance is greater than 10 cm, preferably greater than 50 cm. This allows for the elimination of species with a directionality far from normal incidence. This is applicable, for example, in a spraying or evaporation process. ii. The deposition of ions rather than neutral species, in order to increase the directionality at normal incidence of the species through polarization of the substrate, applicable for example in a spraying process. iii. The use of a collimator between the target and the stack in order to filter out species whose angle of incidence would be too far from the normal incidence, applicable for example in a spraying or evaporation process. iv. Deposition pressure. Typically, this pressure is less than 0.1 Pascal (Pa), ideally less than 1.0x10 4 Pa ​​in order to minimize the diffusion of species during the path from the target to the stack, applicable for example in a spraying, evaporation or molecular beam epitaxy process. • The dimensions of the lateral portions 200a, 200b of the dielectric layer 200, in particular its thickness e200a (typically 0.1 to 1pm) and e200ob (typically 0.01 to 0.1pm) at the top faces of the diodes 100a, 100b • The dimensions of the perforated mask 300, if such a mask is deposited.

[0116] The result of this deposition step is illustrated in [Fig. 21]. As illustrated, during this deposition, the first metallic material is also deposited above the diodes 100a, 100b, typically on the dielectric layer 200. These portions located on the upper faces 101a, 101b of the light-emitting diodes 100a, 100b are then preferably removed during a polishing step ([Fig. 2J]), for example by chemical-mechanical polishing (commonly referred to as CMP, from the English "Chemical- Mechanical Polishing). This prevents the light emitted by diodes 100A, 100B from being reflected towards substrate 10.

[0117] Following the deposition of the mirror 500, it is possible to deposit on it a metallic coating based on a second reflective metallic material, distinct from the first metallic material. The reflective metallic coating can, for example, be conformally deposited on the sides 500a, 500b of the mirror 500. The second metallic material preferably has a maximum reflection coefficient in a wavelength range distinct from that in which the maximum reflection coefficient of the first metallic material lies. The presence of the two distinct metallic materials thus ensures the reflection of light over a wider range of wavelengths than if only one metallic material were present.

[0118] The formation of the mirror 500 is preferably followed by a step of filling the trench 1000. Two main embodiments are distinguished, detailed below.

[0119] According to a first embodiment illustrated in [Fig.2K] and 2M, the trench 1000 is filled by an insulating filling layer 600 based on a second dielectric material, which may be identical to the first dielectric material of the layer 200.

[0120] Next, if the dielectric layer 200, and possibly a mask 60, have been deposited / stored on these upper faces 101a, 101b, openings are formed in them so as to at least partially expose the upper faces 101a, 101b of the diodes 100a, 100b. A common electrode 700 is then advantageously deposited in contact with the upper faces 101a, 101b of the diodes 100a, 100b. This common electrode 700 is continuous and extends, in particular, above the trench 1000 and, in particular, above the mirror 500. The common electrode 700 is based on an electrically conductive material. This material is preferably transparent in a range of wavelengths in which the first diode and the second diode emit or receive light.

[0121] In this first embodiment, the common electrode 700 and the mirror 500 are electrically insulated by the second dielectric material. According to a variant of this embodiment, the common electrode 700 and the mirror 500 are electrically connected, for example by a via in the insulating filling layer 600.

[0122] Moreover, in this first embodiment, it is not necessary to deposit the dielectric layer 200 on the sides 150a, 150b of the diodes 100a, 100b because the electrical insulation between the mirror 500 and the diodes 100a, 100b is in any case ensured by the insulating filling layer 600.

[0123] Figure 2M schematically illustrates the reflection of the light emitted by the first diode 100a by the reflection interface formed by the first flank 500a of the mirror in this first embodiment. The inclination at the angle arefl of this interface allows the light to be redirected in order to allow its extraction through the upper face 101a of the diode 100a.

[0124] According to a second embodiment illustrated in [Fig. 2L] and 2N, the volume between the dielectric layer 200 and the mirror 500 is filled by a conductive filling layer 800 made of an electrically conductive material. The conductive filling layer 800 and the mirror 500 are then in contact. The electrically conductive material is preferably transparent in a range of wavelengths in which the first diode and the second diode emit or receive light. The light will then pass through it to be reflected at the edges 500a, 500b.

[0125] According to a particularly advantageous example, the conductive filler layer 800 is also deposited above the diodes 100a, 100b, in contact with their respective upper faces 101a, 101b. If the dielectric layer 200, and optionally a mask 60, have been deposited / stored on these upper faces 101a, 101b, openings are first formed in them so as to at least partially expose the upper faces 101a, 101b of the diodes 100a, 100b. The conductive filler layer 800 is then deposited in the trench 1000 and in contact with the upper faces 101a, 101b of the diodes 100a, 100b, and this is done continuously. The conductive filling layer 800 and the mirror 500 then together form a common electrode for the diodes 100a, 100b.Since the materials that can be used as the first metallic material for the mirror 500 are particularly good electrical conductors, this embodiment makes it possible to reduce the electrical access resistance of the optoelectronic device.

[0126] In this second embodiment, care will be taken to deposit the dielectric layer 200 on the sides 150a, 150b of the diodes 100a, 100b to ensure electrical insulation between the mirror 500 and the conductive filling layer 800 on the one hand and the diodes 100a, 100b on the other hand.

[0127] Figure 2N schematically illustrates the reflection of the light emitted by the first diode 100a by the reflection interface formed by the first flank 500a of the mirror in this second embodiment. The inclination of this interface at the angle arefl allows the light to be redirected so as to allow its extraction through the upper face 101a of the diode 100a.

[0128] In both embodiments described above, it is then advantageous to deposit an anti-reflective layer based on a dielectric material over the common electrode 700 or the conductive filling layer 800. The anti-reflective layer can, for example, be based on SiO2, SiN, SiON, or even be a multilayer of several of these elements. This anti-reflective layer (not shown in the figures) increases light extraction. It allows also to protect the electrically conductive material forming the common electrode 700 or the conductive filling layer 800.

[0129] Another aspect of the invention relates to an electronic device that can be obtained by any of the embodiments of the process according to the invention described above.

[0130] This device includes at least the substrate 10, the first diode 100a and the second diode 100b within the diode matrix 100a, 100b, 100c, 100d, as well as the mirror 500 as defined previously with reference to the method according to the invention.

[0131] Figures 2K and 2L illustrate two different embodiments of this device.

[0132] Through the different embodiments described above, it is clear that the invention offers an effective solution for improving light extraction and reducing optical crosstalk in a micro-LED matrix.

[0133] The invention is not limited to the embodiments previously described and extends to all embodiments covered by the invention.

Claims

1. Demands A method for manufacturing an optoelectronic device (1) comprising the following steps: • provide a stack comprising: i. a substrate (10) having a top face (11) extending mainly in a plane called the longitudinal plane (XY), ii. a matrix of photoemitting or photoreceiving diodes (100a, 100b, 100c, 100d) arranged on the upper face (11) of the substrate (10), at least a first diode (100a) and a second diode (100b) of the matrix being separated by a trench (1000), • to form in the trench (1000) a mirror (500) based on a first metallic material, the formation of the mirror (500) comprising a step of deposition of the first metallic material in vapor phase, characterized in that the dimensions of the trench (1000) and at least one deposition parameter of the first vapor-phase metallic material are configured such that the mirror (500) exhibits: • a first flank (500a) oriented towards the first diode (100a), forming an interface called the first reflection interface for light emitted or received by the first diode (100a), • a second side (500b) oriented towards the second diode (100a) forming an interface called the second reflection interface for light emitted or received by the second diode (100b), so that the first reflection interface and the second reflection interface each form a so-called reflection angle with the longitudinal plane (XY), measured in the mirror (500), less than 89°, so that the first reflection interface and the second reflection interface move away from the first diode (100a) and the second diode (100b) respectively in the longitudinal plane (XY) as they move away from the substrate (10).

2. A method according to the preceding claim wherein the first diode (100a) and the second diode (100b) each have a flank (150a, 150b) facing the mirror (500), the method further comprising the deposition of a dielectric layer (200) based on a first dielectric material and covering said flanks (150a, 150b) of the first diode (100a) and the second diode (100b).

3. A method according to the preceding claim wherein the dielectric layer (200) has a first outer flank (250a) opposite the first flank (500a) of the mirror (500) and a second outer flank (250b) opposite the second flank (500b) of the mirror (500), and wherein the deposition of the dielectric layer (200) includes a non-conforming deposit on the flank (150a) of the first diode (100a) and on the flank (150b) of the second diode (100b), the parameters of the non-conforming deposit being set so that the first outer flank (250a) and the second outer flank (250b) of the dielectric layer (200) move away from the first diode (100a) and the second diode (100b) respectively in the longitudinal (XY) plane as they move away from the substrate (10).

4. A method according to the preceding claim wherein said parameters of the non-conforming deposit include in particular: a deposition temperature, a deposition pressure, a deposition power and a deposition angle measured between a deposited species flow and the longitudinal (XY) plane.

5. A method according to any one of the preceding claims further comprising, prior to the formation of the mirror (500), the deposition of a perforated mask (300) on each of the diodes (100a, 100b), the mask (300) extending partially overhanging the trench (1000).

6. A method according to any one of the preceding claims further comprising, after the formation of the mirror (500), the formation of a reflective metallic coating on the first flank (500a) and the second flank (500b) of the mirror (500), the metallic coating being based on a second reflective metallic material, distinct from the first metallic material.

7. A method according to any one of the preceding claims further comprising, after the formation of the mirror (500), a step of filling the trench (1000) with a second dielectric material.

8. A method according to the preceding claim in which the first diode (100a) and the second diode (100b) each have an upper face (101a, 101b), further comprising the formation of a common electrode (700) in contact with the upper faces (101a, 101b) of the diodes (100a, 100b) and separated from the mirror (500) by the second dielectric material, the common electrode (700) being based on an electrically conductive material and transparent in a range of wavelengths in which the first diode (100a) and the second diode (100b) emit or receive light.

9. A method according to claim 2 in combination with any one of claims 1 to 6, further comprising, after the formation of the mirror (500), a step of filling the trench (1000) with an electrically conductive and transparent material in a range of wavelengths in which the first diode (100a) and the second diode (100b) emit or receive light.

10. A method according to the preceding claim in which the first diode (100a) and the second diode (100b) each have an upper face (101a, 101b) and in which the electrically conductive material is also deposited in contact with the upper faces (101a, 101b) of the diodes (100a, 100b), so as to form a continuous layer forming with the mirror (500) a common electrode of the diodes (100a, 100b).

11. An optoelectronic device (1) comprising: • a substrate (10) having an upper face (11) extending mainly in a plane called the longitudinal (XY) plane, • an array of photoemitting or photoreceiving diodes (100a, 100b, 100c, 100d) arranged on the upper face (11) of the substrate (10), at least a first diode (100a) and a second diode (100b) of the array being separated by a trench (1000), characterized in that the trench (1000) comprises a mirror (500) based on a first metallic material, the mirror (500) having: • a first flank (500a) opposite the first diode (100a), forming an interface called the first interface of reflection for light emitted or received by the first diode (100a), • a second flank (500b) opposite the second diode (100a) forming an interface called the second reflection interface for light emitted or received by the second diode (100b), such that the first reflection interface and the second reflection interface each form a so-called reflection angle with the longitudinal plane (XY), measured in the mirror (500), less than 89°, so that the first reflection interface and the second reflection interface move away from the first diode (100a) and the second diode (100b) respectively in the longitudinal plane (XY) as they move away from the substrate (10), the mirror (500) extending throughout the volume defined between its first flank (500a) and its second flank (500b).

12. Device according to the preceding claim wherein the angle of reflection is less than 85°, preferably less than 70°.

13. Device according to any one of the two preceding claims wherein the first metallic material is taken from the following materials: copper, aluminum, titanium, titanium nitride, gold, silver, nickel and platinum.

14. Device according to any one of the three preceding claims wherein the first diode (100a) and the second diode (100b) each have a flank (150a, 150b) facing the mirror (500), the device further comprising a dielectric layer (200) based on a first dielectric material and covering said flanks (150a, 150b) of the first diode (100a) and the second diode (100b).

15. Device according to the preceding claim wherein the dielectric layer (200) has a first outer flank (250a) opposite the first flank (500a) of the mirror (500) and a second outer flank (250b) opposite the second flank (500b) of the mirror (500), the first outer flank (250a) and the second outer flank (250b) of the dielectric layer (200) moving away from the first diode (100a) and the second diode (100b) respectively in the longitudinal (XY) plane as they move away from the substrate (10).

16. Device according to any one of the two preceding claims further comprising a conductive filling layer (800) extending between the dielectric layer (200) and the mirror (500), the conductive filling layer (800) being based on an electrically conductive material and transparent in a range of wavelengths in which the first diode (100a) and the second diode (100b) emit or receive light.

17. Device according to the preceding claim wherein the first diode (100a) and the second diode (100b) each have an upper face (101a, 101b) and wherein the conductive filling layer (800) extends to the contact of the upper faces (101a, 101b) of the diodes (100a, 100b), and thus forms a continuous layer forming with the mirror (500) a common electrode of the diodes (100a, 100b).

18. Device according to any one of claims 14 to 17 wherein the dielectric layer (200) is based on at least one of the following materials: SiO2, SiN, SiON, A12O3.

19. Device according to any one of claims 11 to 18 wherein the substrate (10) comprises a plurality of metallic vias (15), each metallic via (15) being underlying, in a transverse direction (Z) perpendicular to the longitudinal plane (XY), a separate diode (100a, 100b, 100c, 100d), and in electrical conduction with said diode (100a, 100b, 100c, 100d).

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