MULTILAYER STRUCTURE FOR PHOTONIC DEVICES AND METHOD FOR ITS MANUFACTURE

Abstract

The invention relates to a multilayer structure for a photonic device, comprising, on a support substrate (10), a stack of layers (20) including: an underlying layer (21) of a first material selected from magnesium, hafnium, zirconium, zinc, or strontium-titanium oxides; an active layer (22) of an antimony and sulfur, selenium, or tellurium salt, disposed on and in direct contact with the underlying layer (21); an overlying layer (23) of a second material selected from magnesium, hafnium, zirconium, zinc, or strontium-titanium oxides, disposed on and in direct contact with the active layer (22); and a covering layer (24) disposed on top of the overlying layer (23). Figure for the abstract: Fig. 1

Claims

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15. Structure according to any one of claims 1 to 7, wherein said covering layer (24) has a thickness greater than or equal to 5 nm. Structure according to any one of claims 1 to 8, wherein the antimony salt of said active layer (22) is in the amorphous state. Structure according to any one of claims 1 to 8, wherein the antimony salt of said active layer (22) has crystalline fractions. A method for manufacturing a multilayer structure according to any one of claims 1 to 10, characterized in that it comprises the formation, on a support substrate (10), of a stack of layers (20) by successive deposition: - of a so-called underlying layer (21) made of a first material selected from magnesium, hafnium, zirconium, zinc or strontium-titanium oxides, or any of their alloys, - of an active layer (22) formed of a salt of antimony and sulfur, selenium or tellurium, said active layer being disposed on said underlying layer (21) and in direct contact with it, - of a so-called overlying layer (23) made of a second material selected from magnesium, hafnium, zirconium, zinc or strontium-titanium oxides, or any of their alloys, on said active layer (22) and in direct contact with it, - and a coating layer (24) of silicon nitride, silicon dioxide, aluminum trioxide, titanium dioxide or silicon oxynitride, above said overlying layer (23). Method according to claim 11, comprising a nanostructuring step of said active layer (22). A method according to claim 11 or 12, comprising a step of crystallizing the antimony salt of said active layer (22). Use of a multilayer structure according to any one of claims 1 to 10 in a photonic device. Photonic device comprising a multilayer structure according to any one of claims 1 to 10. [Fig. 2] [Fig. 3]

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