Asymmetrical field-effect transistor
FR3169282A1Pending Publication Date: 2026-06-05COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Patent Information
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Filing Date
- 2024-12-02
- Publication Date
- 2026-06-05
Abstract
Asymmetric Field-Effect Transistor This description relates to a field-effect transistor (100) comprising at least: - a first semiconductor region (104) of a first type of conductivity, configured to form at least one channel (106); - source (108) and drain (110) regions, each comprising a semiconductor doped with a second type of conductivity opposite to the first type of conductivity; - a second semiconductor region (112) doped with the first type of conductivity and in contact with the source region (108); - a source electrode (114) in contact with both the source region (108) and the second semiconductor region (112); - a drain electrode (116) in contact with the drain region (110). Figure for the abstract: Fig. 1
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