Asymmetrical field-effect transistor

FR3169282A1Pending Publication Date: 2026-06-05COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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Patent Information

Application Number
FR2024013320
Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-12-02
Publication Date
2026-06-05
Patent Text Reader

Abstract

Asymmetric Field-Effect Transistor This description relates to a field-effect transistor (100) comprising at least: - a first semiconductor region (104) of a first type of conductivity, configured to form at least one channel (106); - source (108) and drain (110) regions, each comprising a semiconductor doped with a second type of conductivity opposite to the first type of conductivity; - a second semiconductor region (112) doped with the first type of conductivity and in contact with the source region (108); - a source electrode (114) in contact with both the source region (108) and the second semiconductor region (112); - a drain electrode (116) in contact with the drain region (110). Figure for the abstract: Fig. 1
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Citation Information

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