SUPERJUNCTION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

Abstract

This disclosure relates to a superjunction metal-oxide-semiconductor field-effect transistor (MOSFET). First, a P-type semiconductor and an N-type semiconductor with high doping concentrations are integrated into an N-type drift layer by ion implantation. The P-type and N-type semiconductors form an I-type junction at their interface. The energy levels of the intra-band and inter-band quantum states generated at the I-type junction can absorb carriers generated in the device after irradiation, as well as tunneling electrons between the P-type and N-type semiconductors. This, combined with an overlapping effect of synchronized quantum states, results in the creation of a large number of energy levels of quantum states to absorb carriers, which effectively improves the radiation resistance of the device.In addition, the PIN diode can be integrated at different positions in the N-type drift layer, allowing superjunction MOSFETs to exhibit variable radiation resistance and on-state resistance capabilities, in order to meet the optimal requirements of various applications. [Fig. 1].