Method for manufacturing an opto-electronic device

Abstract

Method for the realization of an opto-electronic device This description relates to a method for the realization of an opto-electronic device, the method comprising the following successive steps: a) forming, on a support substrate (153), an electropolishing stack (157) comprising: – a first sacrificial semiconductor layer (163); – a second charge-carrying semiconductor layer (159); and – a third semiconductor layer (161) protecting the second layer (159), the third layer (161) being interposed between the first (163) and second (159) layers and having a doping level strictly lower than those of the first (163) and second (159) layers; b) forming, on the side of a face of the electropolishing stack (157) opposite the support substrate (153), an active stack (165) of gallium nitride diodes; and c) remove the support substrate (153) by electropolishing the first layer (163).Figure for the summary: Fig. 1A.