Composite structure including a layer of single-crystal III-V composite material and associated manufacturing process

Abstract

The invention relates to a composite structure comprising: - a support substrate, - a seed layer of single-crystal III-V composite material deposited on the support substrate via a bonding interface, the III-V composite material being formed of at least one element of group III, referred to as the first element, and at least one element of group V, referred to as the second element, - a working layer covering at least partially a peripheral periphery of the support substrate, said peripheral periphery being devoid of a seed layer, said working layer being made of a material referred to as the third material, formed of at least one element of group III or group V, having a melting temperature lower than the epitaxial growth temperature of the III-V composite material of the seed layer. The invention also relates to a method for manufacturing such a composite structure. Figure to be published with the abstract: -