Integrated circuit including at least one electrostatic discharge protection device
FR3171335A1Pending Publication Date: 2026-07-17CENT NAT DE LA RECH SCI (C N R S) +3
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Patent Information
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- CENT NAT DE LA RECH SCI (C N R S)
- Filing Date
- 2025-01-14
- Publication Date
- 2026-07-17
Abstract
Integrated circuit comprising at least one electrostatic discharge protection device. This description relates to an integrated circuit (200) comprising at least one electrostatic discharge (ESD) protection device (100), the device comprising at least: - a capacitive element including at least one metal-oxide-metal (MOM) capacitance (102), comprising portions of metallic interconnection levels (126.3, 126.4) of the integrated circuit; - an electronic ESD protection component (104, 108), coupled in parallel with the MOM capacitance and disposed, in the integrated circuit, directly above the MOM capacitance. Figure for the abbreviation: Fig. 2
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