Method for characterizing the edges of a wafer

Abstract

The invention relates to a characterization method comprising the following steps: a) providing a blank wafer (10) made of a single-crystal material, having a front face whose peripheral region (100) extends over a width less than or equal to 5 mm; b) obtaining an image of the front face of the wafer, said image being obtained by grazing light optical interferometry measurements; c) applying a grid defining a plurality of adjacent cells uniformly distributed over the image; d) calculating a local flatness parameter, for each cell covering at least a portion of the peripheral region, from the measurements made in step b); e) defining a threshold for said local flatness parameter, such that, when the value of the local flatness parameter associated with a cell is greater than the threshold, a topological defect is assigned to said cell. Figure to be published with the abstract: Figure 7

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