Detection architecture of a probabilistic bit spintronic device

Abstract

The invention relates to a spintronic device (D1) comprising: a magnetic tunnel junction (MTJ) having a resistance that fluctuates between at least two distinct resistive states (P, AP) depending on its magnetization; a control transistor (TN1) connected in series with the magnetic tunnel junction (MTJ) between a power supply node (VDD) and ground (GND); the common node between the control transistor and the magnetic tunnel junction constituting a first detection node (NC1); a capacitive element (C1) connected between the first detection node (NC1) and a second detection node (NC2); a detection circuit (COMP, INV) having a first input connected to the second detection node (NC2) and configured to generate a detection signal (Vout) that varies according to the resistive state of the magnetic tunnel junction (MTJ) from the electrical potential (VVAR) of the second detection node (NC2). Figure for the abstract: Fig. 2a

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