Compound semiconductor substrate and compound semiconductor device

The compound semiconductor substrate with a Si substrate and layered SiC and GaN structure addresses substrate warpage and cost issues, ensuring high-quality HEMT performance and reduced signal loss.

GB2612558BActive Publication Date: 2025-09-10AIR WATER INC
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Patent Information

Application Number
GB2023002790
Authority / Receiving Office
GB · GB
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-08-24
Filing Date
2021-08-19
Publication Date
2025-09-10
Estimated Expiration
2041-08-19

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Abstract

[Problem] To provide a high-quality compound semiconductor substrate and compound semiconductor device. [Solution] A compound semiconductor substrate comprises: an Si substrate having an O concentrati
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Citation Information

Patent Citations

  • Nitride semiconductor element

    JP2007294769A

  • Epitaxial substrate for electronic device and method for manufacturing the same

    JP2010287882A

  • Compound semiconductor substrate

    JP2020113693A

  • Semiconductor multi-layer substrate, semiconductor element, and production method therefor

    WO2013137476A1

  • Nitride semiconductor structure

    WO2014041736A1