Dry etch process for the production of high electron mobility transistors

GB2703379APending Publication Date: 2026-07-29ALIXLABS AB
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Patent Information

Authority / Receiving Office
GB · GB
Patent Type
Applications
Current Assignee / Owner
ALIXLABS AB
Filing Date
2024-12-04
Publication Date
2026-07-29

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Abstract

A method for high electron mobility transistor (HEMT) device fabrication in an atomic layer etching reactor, comprising: providing a selectively masked gallium nitride (GaN) layer 130 on a wafer 110 f
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